# Schottky Rectifier, 100 V, 20 A, Dual Common Cathode, TO-220AB, 3 Pins, 770 mV

![Product image](https://novapart.co/image/farnell:2453917/)

**URL**: https://novapart.co/products/FYP2010DNTU/schottky-rectifier-100-v-20-a-dual-common-cathode
**SKU**: FYP2010DNTU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.7040
**Stock**: 10+

## Description

Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):20A; Diode Configuration:Dual Common Cathode; Diode Case Style:TO-220AB; No. of Pins:3Pins; Forward Voltage VF Ma

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | FYP20 |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-220AB |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 770mV |
| Forward Surge Current | 150A |
| Average Forward Current | 20A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2453917/)

## **Is Now Part of** 

**To learn more about ON Semiconductor, please visit our website at www.onsemi.com** 

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

**==> picture [51 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
August 2009<br>**----- End of picture text -----**<br>


## **FYP2010DN Schottky Barrier Rectifier** 

## **Features** 

- Low forward voltage drop 

- High frequency properties and switching speed 

- Guard ring for over-voltage protection 

**==> picture [248 x 61] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.Anode<br>—O<br>3.Anode 2. Cathode<br>1   2   3<br>TO-220<br>**----- End of picture text -----**<br>


**Absolute Maximum Ratings** TA=25°C unless otherwise noted 

|**Absolute Maximum Ratingsgss **TA=25°C unless otherwise notedA=25°C unless otherwise noted=25°C unless otherwise noted°C unless otherwise notedC unless otherwise noted|TA=25°C unless otherwise notedA=25°C unless otherwise noted=25°C unless otherwise noted°C unless otherwise notedC unless otherwise noted|||
|---|---|---|---|
|**Symbol**<br>**Parameter**||**Value**|**Units**|
|VRRM<br>Maximum Repetitive Reverse Voltage||100|V|
|VR<br>Maximum DC Reverse Voltage||100|V|
|IF(AV)<br>Average Rectified Forward Current                 @ T|Average Rectified Forward Current                 @ TC= 120°C|20|A|
|IFSM<br>Non-repetitive Peak Surge Current  (per diode)||150|A|
|60Hz Single Half-Sine Wave||||
|TJ, TSTG<br>Operating Junction and Storage Temperature||-65 to +150|°C|
|**Thermal Characteristics**||||
|**Symbol**<br>**Parameter**||**Value**|**Units**|
|RθJC<br>Maximum Thermal Resistance, Junction to Case (per diode)||1.7|°C/W|
|**Electrical Characteristics(per diode)**||||
|**Symbol**<br>**Parameter**||**Value**|**Units**|
|VFM  *<br>Maximum Instantaneous Forward Voltage||||
|IF= 10A|TC= 25°C|0.77||
|IF= 10A|TC= 125°C|0.65|V|
|IF= 20A|TC= 25°C|-||
|IF= 20A|TC= 125°C|0.75||
|IRM   *<br>Maximum Instantaneous Reverse Current<br>@ rated VR|TC= 25°C<br>TC= 125°C|0.1<br>20|mA|



- Pulse Test: Pulse Width=300μs, Duty Cycle=2% 

© 2009 Fairchild Semiconductor Corporation FYP2010DN Rev. B1 

www.fairchildsemi.com 

1 

## **Typical Performance Characteristics** 

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**----- Start of picture text -----**<br>
100 10<br>10 1 TJ=125 oC<br>1 0.1 TJ=75 oC<br>TJ=125 oC<br>0.1 TJ=75 oC 0.01 TJ=25 oC<br>TJ=25 oC<br>0.01 1E-3<br>0.0 0.5 1.0 1.5 20 40 60 80 100<br>Forward Voltage Drop, VF[V] Reverse Voltage, VR[V]<br>[A]F<br>[mA]R<br>Forward Current, I<br>Reverse Current, I<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage Characteristics (per diode)** 

**Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode)** 

**==> picture [417 x 363] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>1000900 TJ=25 oC<br>800<br>700<br>600<br>500<br>400<br>300<br>1<br>200<br>100<br>90<br>80<br>0 20 40 60 80 100<br>100µ 1m 10m 100m 1 10<br>Reverse Voltage, VR[V] Pulse Duration [s]<br>Figure 3. Typical Junction Capacitance  Figure 4. Thermal Impedance Characteristics<br>(per diode) (per diode)<br>25 250<br>DC<br>20 200<br>15 150<br>10<br>100<br>5<br>50<br>0<br>0 20 40 60 80 100 120 140 160 0<br>1 10 100<br>Case Temperature, TC[oC] Number of Cycles @ 60Hz<br>oC/W]<br>Juntion Capacitance, C[pF] J<br>Transient Thermal Impedance [<br>[A] [A]<br>  F(AV) FSM<br>Average Forward Current, I Max. Forward Surge Current, I<br>**----- End of picture text -----**<br>


**Figure 5. Forward Current Derating Curve** 

**Figure 6. Non-Repetive Surge Current (per diode)** 

© 2009 Fairchild Semiconductor Corporation FYP2010DN Rev. B1 

www.fairchildsemi.com 

2 

## **Physical Dimensions** 

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**----- Start of picture text -----**<br>
TO-220<br>**----- End of picture text -----**<br>


**==> picture [412 x 461] intentionally omitted <==**

© 2009 Fairchild Semiconductor Corporation FYP2010DN Rev. B1 

www.fairchildsemi.com 

3 

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