# Schottky Rectifier, 120 V, 12 A, Single, TO-277, 3 Pins, 790 mV ![Product image](https://novapart.co/image/farnell:2992270RL/) **URL**: https://novapart.co/products/FSV12120V/schottky-rectifier-120-v-12-a-single-to-277-3-pins **SKU**: FSV12120V **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes **Price**: €0.3570 **Stock**: 10+ **Lead Time**: 148 days (indicative) ## Description Repetitive Reverse Voltage Vrrm Max:120V; Forward Current If(AV):12A; Diode Configuration:Single; Diode Case Style:TO-277; No. of Pins:3Pins; Forward Voltage VF Max:790mV; Forwar ## Specifications | Parameter | Value | |---|---| | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Diode Mounting | Surface Mount | | Diode Case Style | TO-277 | | Diode Configuration | Single | | Forward Voltage Max | 790mV | | Forward Surge Current | 220A | | Average Forward Current | 12A | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 120V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2992270RL/) FSV12120V ## Ultra-Low VF Schottky Rectifier, 12 A, 120 V ## **Features** - Ultra−Low Forward Voltage Drop **www.onsemi.com** - Low Thermal Resistance - Very Low Profile: Typical Height of 1.1 mm Anode 1 • Trench Schottky Technology 3 • Green Molding Compound as per IEC61249 Standard Cathode Anode 2 • These Devices are Pb−Free, Halogen Free and are RoHS Compliant **Schottky Rectifier Specifications** 3 **ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 2 **Symbol Parameter Value Unit** ~~ov~~ 1 **TO−277** VRRM Peak Repetitive Reverse Voltage 120 V **CASE 340BQ** VRWM Working Peak Reverse Voltage 120 V **MARKING DIAGRAM** VRMS RMS Reverse Voltage 85 V VR DC Blocking Voltage 120 V $Y&Z&3 FSV12120V IF(AV) Average Rectified Peak Forward Surge 12 A Current IFSM Non−Repetitive Peak Forward Surge 220 A $Y = ON Semiconductor Logo Current &Z = Assembly Plant Code TJ Operating Junction Temperature Range −55 to +150 ° C &3FSV12120V = Specific Device Code= Data Code (Year & Week) TSTG Storage Temperature Range −55 to +150 ° C ~~=o~~ Stresses exceeding those listed in the Maximum Ratings table may damage the **ORDERING INFORMATION** device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information on page 2 of assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **FSV12120V/D** **1** © Semiconductor Components Industries, LLC, 2015 **June, 2018 − Rev. 2** **FSV12120V** **THERMAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Note 1) |**THERMAL**|**CHARACTERISTICS**(TA= 25°C unless otherwise noted) (Note 1)|||| |---|---|---|---|---| |**Symbol**|**Parameter**|**Minimum**
**Land Pattern**|**Maximum**
**Land Pattern**|**Unit**| |R�JA|Junction−to−Ambient Thermal Resistance|100|40|°C/W| |ΨJL|Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Anode|15|12|°C/W| ||Junction−to−Lead Thermal Characteristics, Thermocouple Soldered to Cathode|6|5|| 1. The thermal resistances (R � JA & Ψ JL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. **==> picture [154 x 32] intentionally omitted <==** **----- Start of picture text -----**
F
S
F F
S S
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F
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**Figure 1. Minimum Land Pattern of 2 oz Copper** **Figure 2. Maximum Land Pattern of 2 oz Copper** **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRI**|**CAL CHARACTERISTICS**(TA= 25°|C unless otherwise noted)||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |BVR|Breakdown Voltage|IR= 0.5 mA|120|−|−|V| |VF|Forward Voltage Drop|IF= 12 A|−|0.739|0.790|V| |IR|Reverse Current|VR= 120 V|−|5.5|25|�A| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Part Number**|**Top Mark**|**Package**|**Shipping**†| |FSV12120V|FSV12120V|TO−277 3L
(Pb−Free/Halogen Free)|5000 / Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **2** **FSV12120V** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [222 x 165] intentionally omitted <==** **----- Start of picture text -----**
100
10
TA = 150 ° C
TA = 125 ° C
1
TA = 100 ° C
0.1
TA = 75 ° C
TA = 25 ° C
0.01
0.0 0.2 0.4 0.6 0.8 1.0
VF, Forward Voltage (V)
, Forward Current (A)
IF
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**Figure 3. Typical Forward Characteristics** **==> picture [223 x 164] intentionally omitted <==** **----- Start of picture text -----**
100
T A = 150 ° C
10
1 T A = 125 ° C
TA = 100 ° C
0.1
TA = 75 ° C
0.01
TA = 25 ° C
1E−3
20 30 40 50 60 70 80 90 100
Percent of Rated Reverse Voltage (%)
, Leakage Current (mA)
IR
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**Figure 4. Typical Reverse Characteristics** **==> picture [223 x 148] intentionally omitted <==** **----- Start of picture text -----**
1600
1400
1200
1000
800
600
400
200
1 10 100
, Junction Capacitance (pF)
J
C
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VR, Reverse Bias Voltage (V)
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**Figure 5. Typical Junction Capacitance** **==> picture [223 x 170] intentionally omitted <==** **----- Start of picture text -----**
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150
TC, Case Temperature ( � C)
, Forward Current (A)
IF
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**Figure 6. Forward Current Derating Curve** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **TO−277−3LD** CASE 340BQ ISSUE O DATE 30 SEP 2016 |**DOCUMENT NUMBER:**|**98AON13861G**|Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY”in red.|Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY”in red.| |---|---|---|---| |**STATUS:**|**ON SEMICONDUCTOR STANDARD**||| |~~**NEW STANDARD:**~~|||| |©Semiconductor Components Industries, LLC, 2002
~~**NEW STANDARD:**~~|**http://onsemi.com**
Semiconductor Components Industries, LLC, 2002|**http://onsemi.com**
Case Outline Number:|| |©Semiconductor Components Industries, LLC, 2002
**October, 2002 − Rev. 0**
**DESCRIPTION:**|**http://onsemi.com**
**1**
Semiconductor Components Industries, LLC, 2002
Case Outline Number:
**TO−277−3LD**||Case Outline Number:
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**DATE**| |O|RELEASED FOR PRODUCTION FROM FAIRCHILD TO277A03 TO ON
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