# INTELLIGENT POWER MODULE, 600V, 7A
**URL**: https://novapart.co/products/FSB50760SFS/intelligent-power-module-600v-7a
**SKU**: FSB50760SFS
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €7.1800
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3617575/)
## **Is Now Part of**
## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com**
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com.
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_——-_ ~~Saal~~ FAIRCHILD ft SEMICONDUCTOR® April 2025 **FSB50760SFS Motion SPM[®] Series 5 SuperFET[® ] Features Related Source** • UL Certified No. E209204 (UL1557) • _RD-402 - Reference Design for Motion SPM 5 Super-_ • 600 V RDS(on) = 530 mMax SuperFET MOSFET 3- _FET Series_ Phase Inverter with Gate Drivers and Protection _• AN-9082 - Motion SPM5 Series Thermal Performance_ • Built-in Bootstrap Diodes Simplify PCB Layout _by Contact Pressure_ • Separate Open-Source Pins from Low-Side MOS- _• AN-9080 - User’s Guide for Motion SPM 5 Series V2_ FETS for Three-Phase Current-Sensing **General Description** • Active-HIGH Interface, Works with 3.3 / 5 V Logic, The FSB50760SFS is an advanced Motion SPM **[®]** 5 Schmitt-trigger Input module providing a fully-featured, high-performance • Optimized for Low Electromagnetic Interference inverter output stage for AC Induction, BLDC and PMSM • HVIC Temperature-Sensing Built-in for Temperature motors such as refrigerators, fans and pumps. These modules integrate optimized gate drive of the built-in Monitoring MOSFETs(SuperFET **[®]** technology) to minimize EMI and • HVIC for Gate Driving and Under-Voltage Protection losses, while also providing multiple on-module • Isolation Rating: 1500 Vrms / 1 min. protection features including under-voltage lockouts and thermal monitoring. The built-in high-speed • Moisture Sensitive Level (MSL) 3 HVIC requires only a single supply voltage and • RoHS Compliant translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to **Applications** properly drive the module's internal MOSFETs. Separate open-source MOSFET terminals are available • 3-Phase Inverter Driver for Small Power AC Motor for each phase to support the widest variety of control Drives algorithms. **3D Package Drawing (Click to Activate 3D Content) Package Marking & Ordering Information Device Marking Device Package Reel Size Packing Type Quantity** 50760SFS FSB50760SFS SPM5Q-023 330mm Tape-Reel 450
1
©2012 Fairchild Semiconductor Corporation FSB50760SFS Rev. 2
www.fairchildsemi.com
||TH|**Absolute Maximum Ratings**
**Inverter Part**(each MOSFET unless otherwise specified.)
**Control Part**(each HVIC unless otherwise specified.)
**Bootstrap Diode Part**(each bootstrap diode unless otherwise specified.)
**Thermal Resistance**
**Total System**
**1st Notes:**
1. For the measurement point of case temperature TC, please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
**Symbol**
**Parameter**
**Conditions**
**Rating**
**Unit**
VDSS
Drain-Source Voltage of Each MOSFET
600
V
*ID 25
Each MOSFET Drain Current, Continuous TC= 25°C
3.6
A
*ID 80
Each MOSFET Drain Current, Continuous TC= 80°C
2.7
A
*IDP
Each MOSFET Drain Current, Peak
TC= 25°C, PW < 100s
9.4
A
*IDRMS
Each MOSFET Drain Current, Rms
TC= 80°C, FPWM< 20 kHz
1.9
Arms
*PD
Maximum Power Dissipation
TC= 25°C, For Each MOSFET
14.5
W
**Symbol**
**Parameter**
**Conditions**
**Rating**
**Unit**
VCC
Control Supply Voltage
Applied Between VCCand COM
20
V
VBS
High-side Bias Voltage
Applied Between VBand VS
20
V
VIN
Input Signal Voltage
Applied Between IN and COM
-0.3 ~ VCC+ 0.3
V
**Symbol**
**Parameter**
**Conditions**
**Rating**
**Unit**
VRRMB
Maximum Repetitive Reverse Voltage
600
V
* IFB
Forward Current
TC= 25°C
0.5
A
* IFPB
Forward Current (Peak)
TC= 25°C, Under 1ms Pulse Width
1.5
A
**Symbol**
**Parameter**
**Conditions**
**Rating**
**Unit**
RJC
Junction to Case Thermal Resistance
Each MOSFET under Inverter Oper-
ating Condition (1st Note 1)
8.6
°C/W
**Symbol**
**Parameter**
**Conditions**
**Rating**
**Unit**
TJ
Operating Junction Temperature
-40 ~ 150
°C
TSTG
Storage Temperature
-40 ~ 125
°C
VISO
Isolation Voltage
60 Hz, Sinusoidal, 1 Minute, Con-
nect Pins to Heat Sink Plate
1500
Vrms
**DISCONTINUED**
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PLEASE CONTACT YOUR**onsemi**
REPRESENTATIVE FOR INFORMATION|**FSB50760SFS Motion SPM® 5 SuperFET® Series**
|
|---|---|---|---|
2
©2012 Fairchild Semiconductor Corporation FSB50760SFS Rev. 2
www.fairchildsemi.com
||**Pin descriptions**
**Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)**
**1st Notes:**
3. Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside Motion SPM®5 product. External connections should be made as
indicated in Figure 3.
**Pin Number**
**Pin Name**
**Pin Description**
1
COM
IC Common Supply Ground
2
VB(U)
Bias Voltage for U-Phase High-Side MOSFET Driving
3
VCC(U)
Bias Voltage for U-Phase IC and Low-Side MOSFET Driving
4
IN(UH)
Signal Input for U-Phase High-Side
5
IN(UL)
Signal Input for U-Phase Low-Side
6
N.C
No Connection
7
VB(V)
Bias Voltage for V-Phase High Side MOSFET Driving
8
VCC(V)
Bias Voltage for V-Phase IC and Low Side MOSFET Driving
9
IN(VH)
Signal Input for V-Phase High-Side
10
IN(VL)
Signal Input for V-Phase Low-Side
11
VTS
Output for HVIC Temperature Sensing
12
VB(W)
Bias Voltage for W-Phase High-Side MOSFET Driving
13
VCC(W)
Bias Voltage for W-Phase IC and Low-Side MOSFET Driving
14
IN(WH)
Signal Input for W-Phase High-Side
15
IN(WL)
Signal Input for W-Phase Low-Side
16
N.C
No Connection
17
P
Positive DC-Link Input
18
U, VS(U)
Output for U-Phase & Bias Voltage Ground for High-Side MOSFET Driving
19
NU
Negative DC-Link Input for U-Phase
20
NV
Negative DC-Link Input for V-Phase
21
V, VS(V)
Output for V-Phase & Bias Voltage Ground for High-Side MOSFET Driving
22
NW
Negative DC-Link Input for W-Phase
23
W, VS(W)
Output for W Phase & Bias Voltage Ground for High-Side MOSFET Driving
(1) COM
(2) VB(U)
(3) VCC(U)
(4) IN (UH)
(5) IN (UL)
(6) N.C
(7) VB(V)
(8) VCC(V)
(9) IN (VH)
(10) IN (VL)
(11) VTS
(12) V B(W)
(13) VCC(W)
(14) IN (WH)
(15) IN (WL)
(16)
(17) P
(18) U, VS(U)
(19) NU
(20) NV
(21) V, VS(V)
(22) NW
(23) W, VS(W)
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
VTS
COM
VCC
LIN
HIN
VB
HO
VS
LO
N.C
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|
|---|---|---|
3
©2012 Fairchild Semiconductor Corporation FSB50760SFS Rev. 2
www.fairchildsemi.com
||TH|**Electrical Characteristics**(TJ= 25°C, VCC= VBS= 15 V unless otherwise specified.)
**Inverter Part**(each MOSFET unless otherwise specified.)
**Control Part**(each HVIC unless otherwise specified.)
**Bootstrap Diode Part**(each bootstrap diode unless otherwise specified.)
**2nd Notes:**
1. BVDSSis the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM®5 product. VPNshould be sufficiently less than this
value considering the effect of the stray inductance so that VPNshould not exceed BVDSSin any case.
2. tONand tOFFinclude the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field
applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.
3. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test
circuit that is same as the switching test circuit.
4. Vtsis only for sensing-temperature of module and cannot shutdown MOSFETs automatically.
5. Built-in bootstrap diode includes around 15Ωresistance characteristic. Please refer to Figure 2.
**Symbol**
**Parameter**
**Conditions**
**Min**
**Typ**
**Max**
**Unit**
BVDSS
Drain - Source
Breakdown Voltage
VIN= 0 V, ID= 1 mA (2nd Note 1)
600
-
-
V
IDSS
Zero Gate Voltage
Drain Current
VIN= 0 V, VDS= 600 V
-
-
1
mA
RDS(on)
Static Drain - Source
Turn-On Resistance
VCC= VBS= 15 V, VIN= 5 V, ID= 2 A
-
460
530
m
VSD
Drain - Source Diode
Forward Voltage
VCC= VBS= 15 V, VIN= 0 V, ID= -2 A
-
-
1.1
V
tON
Switching Times
VPN= 300 V, VCC= VBS= 15 V, ID= 2 A
VIN= 0 V5 V, Inductive Load L = 3 mH
High- and Low-Side MOSFET Switching
(2nd Note 2)
-
1200
-
ns
tOFF
-
970
-
ns
trr
-
160
-
ns
EON
-
120
-
J
EOFF
-
10
-
J
RBSOA
Reverse Bias Safe Oper-
ating Area
VPN= 400 V, VCC= VBS= 15 V, ID= IDP, VDS= BVDSS,
TJ= 150°C
High- and Low-Side MOSFET Switching (2nd Note 3)
Full Square
**Symbol**
**Parameter**
**Conditions**
**Min**
**Typ**
**Max**
**Unit**
IQCC
Quiescent VCCCurrent
VCC= 15 V,
VIN= 0 V
Applied Between VCCand COM
-
-
200
A
IQBS
Quiescent VBSCurrent
VBS= 15 V,
VIN= 0 V
Applied Between VB(U)- U,
VB(V)- V, VB(W)- W
-
-
100
A
UVCCD
Low-Side Under-Voltage
Protection (Figure 8)
VCCUnder-Voltage Protection Detection Level
7.4
8.0
9.4
V
UVCCR
VCCUnder-Voltage Protection Reset Level
8.0
8.9
9.8
V
UVBSD
High-Side Under-Voltage
Protection (Figure 9)
VBSUnder-Voltage Protection Detection Level
7.4
8.0
9.4
V
UVBSR
VBSUnder-Voltage Protection Reset Level
8.0
8.9
9.8
V
VTS
HVIC Temperature Sens-
ing Voltage Output
VCC= 15 V, THVIC= 25°C (2nd Note 4)
600
790
980
mV
VIH
ON Threshold Voltage
Logic HIGH Level
Applied between IN and COM
-
-
2.9
V
VIL
OFF Threshold Voltage
Logic LOW Level
0.8
-
-
V
**Symbol**
**Parameter**
**Conditions**
**Min**
**Typ**
**Max**
**Unit**
VFB
Forward Voltage
IF= 0.1 A, TC= 25°C (2nd Note 5)
-
2.5
-
V
trrB
Reverse Recovery Time
IF= 0.1 A, TC= 25°C
-
80
-
ns
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PLEASE CONTACT YOUR**onsemi**
REPRESENTATIVE FOR INFORMATION|**FSB50760SFS Motion SPM® 5 SuperFET® Series**
|
|---|---|---|---|
4
©2012 Fairchild Semiconductor Corporation FSB50760SFS Rev. 2
www.fairchildsemi.com
**==> picture [523 x 686] intentionally omitted <==**
**----- Start of picture text -----**
Recommended Operating Condition
Symbol Parameter Conditions Min. Typ. Max. Unit
VPN Supply Voltage Applied Between P and N - 300 450 V
VCC Control Supply Voltage Applied Between VCC and COM 13.5 15.0 16.5 V
VBS High-Side Bias Voltage Applied Between VB and VS 13.5 15.0 16.5 V
VIN(ON) Input ON Threshold Voltage 3.0 - VCC V
Applied Between IN and COM
VIN(OFF) Input OFF Threshold Voltage 0 - 0.6 V
tdead Blanking Time for PreventingArm-Short VCC = VBS = 13.5 ~ 16.5 V, TJ 150°C 1.0 - - s
fPWM PWM Switching Frequency TJ 150°C - 20 - kHz
Built-in Bootstrap Diode VF-IF Characteristic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VF [V] Tc=25°C
Figure 2. Built-in Bootstrap Diode Characteristics (Typical)
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[A]
IF
**----- End of picture text -----**
5
©2012 Fairchild Semiconductor Corporation FSB50760SFS Rev. 2
www.fairchildsemi.com
**==> picture [531 x 632] intentionally omitted <==**
**----- Start of picture text -----**
These values depend on PWM control algorithm
+15 V C1 * Example Circuit : V phase
se
i O[4 , VCC ——————_| VB P (> InverterVDC HIN0 LIN0 OutZput Both FRFET OffNote
R5 HIN HO V Output 0 1 0 Low side FRFET On
LIN VS C3 1 0 VDC High side FRFET On
C5 COM LO 1 1 Forbidden Shoot through
I Pf | o, el o VTS N I R3 Open Open Z Same as (0,0)
10 F C2 C4 One Leg Diagram of Motion SPM [®] 5 Product
* Example of Bootstrap Paramters:
C1 = C2 = 1 F Ceramic Capacitor
Figure 3. Recommended MCU Interface and Bootstrap Circuit with Parameters
3rd Notes:
1. Parameters for bootstrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.
2. RC-coupling (R5 and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise.
3. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge-voltage. Bypass capacitors such as C1, C2
and C3 should have good high-frequency characteristics to absorb high-frequency ripple-current.
745mm
PEAAARAIARARARAAURAROAIOAAROBLE
E 9 eG WMS AS
n OG O OO ©
eT, YY
MOSFET Case Temperature(Tc)
Detecting Point
Figure 4. Case Temperature Measurement
3rd Notes:
4. Attach the thermocouple on top of the heat-sink of SPM 5 package (between SPM 5 package and heatsink if applied) to get the correct temperature measurement.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20 40 60 80 100 120 140 160
THVIC [oC]
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MCU
FSB50760SFS Motion SPM® 5 SuperFET® Series
[V]
TS
V
**----- End of picture text -----**
**Figure 5. Temperature Profile of VTS (Typical)**
6
©2012 Fairchild Semiconductor Corporation FSB50760SFS Rev. 2
www.fairchildsemi.com
**==> picture [531 x 686] intentionally omitted <==**
**----- Start of picture text -----**
VIN VIN
Irr
100% of ID 120% of ID
VDS ID
10% of ID
ID VDS
tON trr tOFF
(a) Turn-on (b) Turn-off
Figure 6. Switching Time Definitions
CBS
VCC ID
VCC VB
HIN HO L VDC
LIN VS
+
COM LO V DS
VTS -
One Leg Diagram of Motion SPM [®] 5 Product
Figure 7. Switching and RBSOA (Single-pulse) Test Circuit (Low-side)
Input Signal
UV Protection
RESET DETECTION RESET
Status
Low-side Supply, VCC UVCCD UVCCR
MOSFET Current
Figure 8. Under-Voltage Protection (Low-Side)
Input Signal
UV Protection
RESET DETECTION RESET
Status
High-side Supply, VBS UVBSD UVBSR
MOSFET Current
Figure 9. Under-Voltage Protection (High-Side)
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FSB50760SFS Motion SPM® 5 SuperFET® Series
**----- End of picture text -----**
7
©2012 Fairchild Semiconductor Corporation FSB50760SFS Rev. 2
www.fairchildsemi.com
**==> picture [531 x 686] intentionally omitted <==**
**----- Start of picture text -----**
C1
(1) COM
(2) VB(U) (17) P
(3) VCC(U)
VCC VB
R5 (4) IN(UH)
(5) IN(UL) HINLIN HOVS (18) U, VS(U) C3 VDC
C5 C2 COM LO
(6) N.C
(19) NU
(7) VB(V)
(8) VCC(V) (20) NV
VCC VB
(9) IN(VH)
HIN HO
(10) IN(VL) (21) V, VS(V)
LIN VS M
COM LO
(11) VTS
VTS
(12) VB(W)
(13) VCC(W) (22) NW
VCC VB
(14) IN(WH)
HIN HO
(15) IN(WL) (23) W, VS(W)
LIN VS
COM LO
(16) N.C
C4
For current-sensing and protection R4
15 V
Supply C6 R3
Figure 10. Example of Application Circuit
4th Notes:
1. About pin position, refer to Figure 1.
2. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM [®] 5 product and MCU are useful to prevent improper input signal caused by surge-noise.
3. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low-
side MOSFET. For this reason, the voltage-drop across R3 should be less than 1 V in the steady-state.
4. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC.
5. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current. DISCONTINUED
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Micom
FSB50760SFS Motion SPM® 5 SuperFET® Series
**----- End of picture text -----**
8
©2012 Fairchild Semiconductor Corporation FSB50760SFS Rev. 2
www.fairchildsemi.com
**==> picture [531 x 620] intentionally omitted <==**
**----- Start of picture text -----**
Detailed Package Outline Drawings (FSB50760SFS)
_,,_ Max 1.00
| 0.500.70 16x 1.4782.078 15x
Pee eee ey eres ery ere ery ee ry ey
——
(1.165) | 26.3726.97 | (1.165)
13.6413.04 13.64 cana(1.80) I
| 13.04 (1.09) wan
1 | | 058
SILI | 16 ft
Cr LM KS :E GAGE PLANE (2.50)
\
<4 | SZR 4 gc! Fe | anaes eee ae
SS ——— SEATING PLANE
wl OW WRTH GW Ds
(2.275) | 12.5311.93 13.4312.83 (1.375) 3.30 (1.30)
29.20 2.90 |
28.80
2.25
165
2.78 4.20 ;
4.20 _ 3 1 1.778 15X 1 0.889
oe= ee Cee ee | eeooee; - sueeuntacneser:|
a| a1.3 |
17 || 0.70 0.60 23 ee,|
|| 0.50Max *1.00 | PIN0.4019,20 2% 10 3.902X ; 3.904X
NOTES: — Mi a | ra|
A) THIS UNLESSPACKAGE OTHERWISEDOES NOT SPECIFIEDCOMPLY 17 A i AB if i =:
TO ANY CURRENT PACKAGING STANDARD 1.95
B) ALL DIMENSIONS ARE IN MILLIMETERS —
C) DIMENSIONS ARE EXCLUSIVE OF BURRS, - —
MOLD FLASH, AND TIE BAR EXTRUSIONS
D)( ) IS REFERENCE: L A NDND PATTERN RECOMMENDATNDAT I ONS
E)[ ]|IS ASS'Y QUALITY
F) DRAWING FILENAME: MOD23DGREV4.0
G) FAIRCHILD SEMICONDUCTOR
yf
FAIRCHILD
yf
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
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FSB50760SFS Motion SPM® 5 SuperFET® Series
**----- End of picture text -----**
_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:_
_http://www.fairchildsemi.com/dwg/MO/MOD23DG.pdf_
9
©2012 Fairchild Semiconductor Corporation FSB50760SFS Rev. 2
www.fairchildsemi.com
**==> picture [531 x 710] intentionally omitted <==**
**----- Start of picture text -----**
FAIRCHILD.
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ OPTOPLANAR® ce SYSTEM .
AttitudeEngine™ FRFET” - GENERAL!
Awinda® Global Power Resource” ® TinyBoost”
AX-CAP™ GreenBridge™ Power Supply WebDesigner™ TinyBuck™
Bitsic™ Green FPS™ PowerTrench® TinyCalc™
Build it Now™ Green FPS™ e-Series™ PowerxS™ TinyLogic®
CorePLUS™ Gmax™ Programmable Active Droop™ TINYOPTO™
CorePOWER™ GTOo™ QFET® TinyPower™
CROSSVOLT™ IntelliMAX™ as™ TinyPWM™
cTL™ ISOPLANAR™ Quiet Series™ TinyWire™
Current Transfer Logic™ Making Small Speakers Sound Louder —-RapidConfigure™ TranSic™
D EcoSPARK®ualEUXPEEDCool™ fitsMegaBuck™ poreand Better™ Savinga d our world, ImWMWKW at atime™ | T riFaultRUECURRENT eae *
EfficientMax™ Serpegm
ESBc™ MicroFET™ SignalWise™ y
© MicroPak™ SmartMax™ ,
-_ MicroPak2™i SolutionsSMART START™for YourSuccess™ UHC‘e
aoe MillerDrive™ Se Soe ray Ultra FRFET™
Fairchild” scdlsciMex™ SPM® UniFET
Fairchild Semiconductor” Serealce STEALTH™ hfs
FACT Quiet Series™ lotion SuperFET® Vex
FACT? MTia SuperSOT™3 VisualMax™
FAST” MTX SuperSOT™-6 Volta gerlust
FastvCore™ eas ver” SuperSOT™-8 a om
FETBench™ mWSave Supremos® Xsens
FPS™ Borel ee co SyncFET™ {at™
OPTOLOGI Sync-Lock™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Eretivanerya First, Production' | SemiconductorDatasheet contains reservespreliminary the rightdata; to makesupplementary changes at data anywill timebe withoutpublished noticeat toa later improve date. design.Fairchild
Ro aor ; Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
aneeaia eee Fall Rreauction changes at any time without notice to improve the design.
Obsolete Not In Production‘ TheDatasheet datasheet containsis for specifications reference information on a productonly. that is discontinued by Fairchild Semiconductor.
Rev. 175
©2012 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com
FSB50760SFS Rev. 2
DISCONTINUED
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PLEASE CONTACT YOUR
REPRESENTATIVE FOR INFORMATION
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FSB50760SFS Motion SPM® 5 SuperFET® Series
**----- End of picture text -----**
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## Links
- [View this product on Novapart](https://novapart.co/products/FSB50760SFS/intelligent-power-module-600v-7a)
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- [Supplier page](https://es.farnell.com/on-semiconductor/fsb50760sfs/intelligent-power-module-600v/dp/3617575)
---
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