# IGBT Module, Six Pack [Full Bridge], 75 A, 1.85 V, 375 W, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3227675/)

**URL**: https://novapart.co/products/FS75R12W2T4BOMA1/igbt-module-six-pack-full-bridge-75-a-185-v-375-w
**SKU**: FS75R12W2T4BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €40.4800
**Stock**: 10+
**Lead Time**: 85 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPACK |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 375W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 75A |
| Power Dissipation Pd | 375W |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 75A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3227675/)

IGBT-模块 IGBT-modules 

## FS75R12W2T4 

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VCES = 1200V IC nom = 75A / ICRM = 150A 

## **典型应用** 

- 空调 

- • 电机传动 • 伺服驱动器 

- • UPS系统 

- 

- 

- 

- 

## **电气特性** 

- 低开关损耗 

- • 沟槽栅IGBT4 • VCEsat 

- CEsat 

- 

- 

- VCEsat 

- CEsat 

## **机械特性** 

- 2O3 

- 紧凑型设计 

- • 焊接技术 

- • 集成的安装夹使安装坚固 

- Al2O3 

- 

- 

• Rugged mounting due to integrated mounting clamps 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FS75R12W2T4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FS75R12W2T4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-04<br>revision:2.3<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>75<br>107<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>375<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 2,40 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,57<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>10<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>4,30<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,16<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>td on<br>0,13<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 2,2Ω<br>tr<br>0,02<br>0,03<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>td off<br>0,30<br>0,38<br>0,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 2,2Ω<br>tf<br>0,045<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 2800 A/µs (Tvj= 150°C)<br>RGon= 2,2Ω<br>Eon<br>4,70<br>7,20<br>8,00<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 3800 V/µs (Tvj= 150°C)<br>RGoff= 2,2Ω<br>Eoff<br>3,90<br>6,10<br>6,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>270<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,35<br>0,40<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,60<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FS75R12W2T4 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|75|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1050<br>985|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 2800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||115<br>120<br>125||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 75 A, - diF/dt = 2800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||8,60<br>14,0<br>16,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 2800 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,60<br>4,50<br>5,50||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||0,55|0,65|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,75||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定|||||||



Specification�according�to�the�valid�application�note. 

prepared�by:�DK date�of�publication:�2013-11-04 approved�by:�MB revision:�2.3 

3 

## 技术信息�/�Technical�Information 

## IGBT-模块IGBT-modules FS75R12W2T4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **模块�/�Module** 

|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|爬电距离<br>Creepagedistance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||11,5<br>6,3|||mm|
|电气间隙<br>Clearance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||10,0<br>5,0|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|杂散电感,模块<br>Strayinductancemodule||LsCE||40||nH|
|模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'||4,00||mΩ|
|储存温度<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|重量<br>Weight||G||39||g|



Der Strom im Dauerbetrieb ist auf 30 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 30 A rms per connector pin. 

prepared�by:�DK approved�by:�MB 

date�of�publication:�2013-11-04 revision:�2.3 

4 

IGBT-模块 IGBT-modules 

## FS75R12W2T4 

## **初步数据** 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>150 a 7 150 es | [ov<br>Tvj = 25°C VGE = 19V<br>135 Tvj = 125°C 135 VGE = 17V<br>fFL Tvj = 150°C yle | VGE = 15V Li AeLe<br>VGE = 13V<br>120 Ba e 120 VGE = 11V faneee<br>VGE =   9V<br>Pi t<br>105 105<br>ye EE J ee<br>Peery} PEE aa<br>90 90<br>75 75<br>ppdaw Lay eT<br>60 60<br>pti veea , Pt ELeei; 4<br>45 Se eee eee) 45 vAcee<br>iee oo<br>30 30<br>15 15<br>PTLET PT gee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+H15V,R Gon =22 Ω ,R Goff =2.2 Ω ,V CE =600V<br>150<br>Tvj = 25°C Eon, Tvj = 125°C<br>135 Tvj = 125°C 20 Eoff, Tvj = 125°C<br>r Tvj = 150°C r e Eon, Tvj = 150°C a<br>18 Eoff, Tvj = 150°C<br>120<br>ea Ee P opoce<br>16<br>105<br>a ) e e<br>14<br>90<br>12<br>jtt tte | Pp} Ey ee<br>75<br>pt | | er ia<br>10<br>TTF pe |e<br>60<br>8<br>45<br>6<br>pf i} Ylf |) P p ee e |<br>30<br>4<br>15 2<br>aee ee<br>per<br>0 0<br>5 6 7 8 9 10 11 12 13 0 15 30 45 60 75 90 105 120 135 150<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FS75R12W2T4 

## **初步数据** 

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Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =75A,V CE =600V<br>20 10<br>Eon, Tvj = 125°C ZthJH  : IGBT<br>18 =a Eoff, Tvj = 125°C r it tf fo ParrH— roo  yeERE or T TTTT TTT<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>16 el i<br>PT .) | Leea a LUT ET TEEell<br>14<br>a 1 AI ELAM EVIE Ll<br>12<br>10 Pf | oteteea“acef | |] | 2aPe Et | HE EE<br>8 Pty 2 |<br>ft ff |} dd HEETHIET<br>0,1<br>6 ee} LU IIE TE Tl<br>4 Pt tf ft ff dd A4PEnr<br>i:    1    2    3    4<br>2 eee ee ee e r τ ii[K/W]:   [s]:    0,032   0,0005    e 0,062   0,005   0,312   0,05    0,543   0,2<br>a el<br>0 ee ee 0,01 |<br>0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Rim 2S IGBT, #28 ( RBSOA ) EAMES RE ERS ( HB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =2.2 Ω ,T vj =150°C<br>165 150<br>IC, Modul Tvj = 25°C<br>150 I C , Chip 135 Tvj = 125°C<br>Tvj = 150°C<br>FE _Li TT T FE PLL<br>135<br>120<br>120<br>PEER AA) PREBSSeetyer<br>105<br>105<br>90<br>90<br>75<br>75<br>60<br>60<br>45<br>45<br>30<br>30 P| | Pt /<br>15 ee 15 ee VAeee<br>0 Pot tT 0 e a |r<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br>  [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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IGBT-模块 IGBT-modules 

## FS75R12W2T4 

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初步数据<br>**----- End of picture text -----**<br>


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Erec =f(I F) Erec =f(R G)<br>RGon Mo Ω ,V CE =600V IF - 78 KV CE = 600 V<br>8 8<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>7 7<br>Et) fe<br>Ht SE R RE<br>6 6<br>5 5<br>Ler eer} LE<br>4 Like“A ETE 4 LAKD| RR> LD<br>3 3<br>Lee ety) LEE PRE ET<br>2 eeLEVA ETL 2 LEELA<br>ALLE<br>1 1<br>MOO)T ETE) LETTEEeeEEE EEE<br>0 0<br>0 15 30 45 60 75 90 105 120 135 150 0 2 4 6 8 10 12 14 16 18 20 22<br>IF [A] RG [ Ω ]<br>transientRASTAthermal— iS, impedancees Diode, Inverter RBEABARNTC-Thermistor-temperatureBH BER characteristic (typical)<br>ZthJH =f (t) R=f(T)<br>10 100000<br>ZthJH  : Diode Rtyp<br>{— (_— (SSeS<br>Re Se<br>PT TT TTT TTT Pot ft fT tT fT tT ft fT fT tT tT ft Tt<br>a ll pt ft ft tT | TE<br>| | ll Pi ttt tT ttt tT tt tt<br>TI M<br>1 10000<br>eLE e  e ee KEa E E E ELL<br>Pt et [><br>PTPT TTT er TT Neee ee<br>Pt TT Oe TTT TTT P| [TNT tT tT tT tT fT tT tT tT<br>ST Pt | Wott tt tt TT<br>0,1 ita 1000 pittSSR Nt tt tt<br>a PF<br>PtPT TT TTT TTT Potaft fT fT Tt tT ft ft fT RATa TT<br>P| a a<br>i:    1    2    3    4<br>ri[K/W]:   0,059    0,137   0,502   0,602<br>PT T τ i[s]:    0,0005   0,005    T 0,05    0,2    Pit tt tT tT TT tT ET AA<br>LE mom LE EEE EE<br>0,01 100<br>0,001 0,01 0,1 1 10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br>  [K/W] R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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8 

IGBT-模块 IGBT-modules 

## FS75R12W2T4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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## Links

- [View this product on Novapart](https://novapart.co/products/FS75R12W2T4BOMA1/igbt-module-six-pack-full-bridge-75-a-185-v-375-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fs75r12w2t4boma1/igbt-mod-six-n-ch-1-2kv-75a-375w/dp/3227675)
---

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