# IGBT Module, Six Pack, 75 A, 1.45 V, 250 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3816947/)

**URL**: https://novapart.co/products/FS75R06KE3BPSA1/igbt-module-six-pack-75-a-145-v-250-w-150-c
**SKU**: FS75R06KE3BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €44.0700
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | - |
| Power Dissipation | 250W |
| Igbt Configuration | Six Pack |
| Transistor Mounting | Panel |
| Dc Collector Current | 75A |
| Power Dissipation Pd | 250W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 75A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Saturation Voltage Vce(On) | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3816947/)

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS75R06KE3 

**==> picture [86 x 38] intentionally omitted <==**

EconoPACK™�mit�schnellem�Trench/Feldstop�IGBT³�und�Emitter�Controlled3�Diode� EconoPACK™�with�fast�trench/fieldstop�IGBT³�and�Emitter�Controlled3�diode� 

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS75R06KE3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EconoPACK™mitschnellemTrench/FeldstopIGBT³undEmitterControlled3Diode<br>EconoPACK™withfasttrench/fieldstopIGBT³andEmitterControlled3diode<br>preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 70°C, Tvj max= 175°C<br>IC nom<br>75<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>250<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>4,60<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,145<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>td on<br>0,025<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>tr<br>0,02<br>0,02<br>0,02<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>td off<br>0,21<br>0,24<br>0,25<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>tf<br>0,06<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 4000 A/µs (Tvj= 150°C)<br>RGon= 5,1Ω<br>Eon<br>0,35<br>0,50<br>0,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 5,1Ω<br>Eoff<br>2,40<br>2,80<br>3,00<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>530<br>380<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,60<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,20<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

> IGBT-ModuleIGBT-modules FS75R06KE3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|75|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|660<br>610<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||100<br>115<br>125||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 75 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,00<br>6,00<br>7,50||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,95<br>1,50<br>1,85||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,95|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,30||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�CM date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 

2 

IGBT-Module IGBT-modules 

## FS75R06KE3 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 225|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,02||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|19<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||2,50||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||180||g|



3 

## IGBT-Module IGBT-modules Technische Information / FS75R06KE3 Technical Information 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>150 150<br>| ro es<br>Tvj = 25°C VGE = 19V<br>135 Tvj = 125°C Joe 135 VGE = 17V | Za<br>Tvj = 150°C VGE = 15V<br>i / VGE = 13V “a<br>120 120 VGE = 11V<br>es aee | i eT |<br>VGE = 9V<br>p o F E<br>105 105<br>ee e eee<br>90 90<br>Pe<br>75 L 7 -a 75 ee) on Aa<br>60 60<br>/<br>/<br>45 45<br>30 30<br>re ae eee) )a e<br>15 15<br>i See eeeAe<br>0 0<br>Se | ) Dee<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =51 Ω ,R Goff =51 Ω ,V CE =300V<br>150 6,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>135 Mm Tvj = 125°C | fe 5,5 Mm Eoff, T CULL vj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°<br>5,0 Eoff, Tvj = 150°C<br>a — |e I popegg<br>120<br>4,5<br>| | “<br>105<br>pf i¢| pe e e e eee<br>4,0<br>PP “<br>90 pe<br>3,5 ee<br>Var<br>75 PL tt FE |) 3,0 EeLf?<br>60 a eee ee 2,5 eee<br>2,0<br>45 eeay ee ee eeeeee<br>1,5<br>30<br>pt | lA) | ./,<br>1,0<br>ae At tT | | |<br>15 ral Ann SE<br>0,5<br>pe LeA det<br>0 0,0<br>5 6 7 8 9 10 11 12 0 15 30 45 60 75 90 105 120 135 150<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

IGBT-Module IGBT-modules 

## FS75R06KE3 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =75A,V CE =300V<br>6,0 1 ee<br>i Eon, Tvj = 125°C 1 ] | ttt | Ht ZthJC : IGBT PT TTT  c TTT o TTT<br>5,5 Eoff, Tvj = 125°C oT<br>Eon, Tvj = 150°C |<br>5,0 Eoff, Tvj = 150°C<br>nn i<br>— T T] Tf ee] a | |<br>4,5<br>4 ee<br>4,0 ian PLACATE<br>Va _ ETM ULI<br>3,5<br>Soe Il<br>3,0 P| | LeeeeeZe TO | | 0,1 /<br>ieee eee4 eAPT TTATTT<br>2,5 ’ i<br>P| i<br>2,0<br>rT ia| tv]Tey| | T| d d aAt| | ||<br>1,5 : ATIIE EE<br>1,0<br>i:    1    2    3    4<br>ri[K/W]:   0,036   0,198   0,192   0,174<br>0,5 τ i[s]:    0,01    0,02    0,05    0,1<br>0,0 Pt ee TE ET 0,01 CLAN Hom o<br>0 5 10 15 20 25 30 35 40 45 50 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ee V,R Goff =51 Ω ,T vj =150°C<br>165 150<br>IC, Modul Tvj = 25°C<br>150 I C , Chip 135 Tvj = 125°C<br>EH] P Tvj = 150°C oe<br>135<br>120<br>120<br>105<br>105<br>90<br>pe<br>90<br>75<br>75<br>to Cee<br>60<br>60<br>Pt te | eae<br>45<br>45 Pf yf | f/<br>30<br>30<br>yy anne ane<br>15 15<br>SSE bobeecoor<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

IGBT-Module IGBT-modules 

## FS75R06KE3 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =fi(l F) Erec =f(R G)<br>RGon ay Ω ,V CE =300V IF -73ny CE = 300 V<br>4,0 3,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>a<br>3,5<br>2,5<br>3,0<br>PEE Ey it<br>2,0<br>2,5<br>PCCEC Ra LAL ELE<br>2,0 1,5<br>1,5<br>ti eee | NSRP PT<br>1,0<br>oa Ns.<br>1,0<br>a =<br>0,5<br>BZennnEae >"<br>0,5<br>0,0 0,0<br>0 15 30 45 60 75 90 105 120 135 150 0 5 10 15 20 25 30 35 40 45 50<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 Pt tei tT 100000 ————————————————————————————<br>ZthJC : Diode Rtyp<br>en ll<br>A Ls<br>I V i DO<br>TE VEE ETT es ee<br>pe ln | ry.<br>a ae 10000 Ne ee<br>a<br>0,1 7FE[\ ee 2 Ne ee eee<br>Yee ATU TTF TTT TT aN\ eee<br>P/E TT TEE 1000 ————_————<br>VIE ETE EE ET) eeae rs<br>i:    1    2    3    4<br>ri[K/W]:   0,057   0,3135   0,304   0,2755<br>CO τ i[s]:    0,01    0,02    0,05    0,1    ee ee eS<br>0,01 Tomo 100 PP EE |<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS75R06KE3 

## **Schaltplan�/�circuit_diagram_headline** 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

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**----- Start of picture text -----**<br>
J<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
In fin e o n<br>**----- End of picture text -----**<br>


prepared�by:�CM date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 

7 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS75R06KE3 

## **Nutzungsbedingungen** 

## application. 

8 



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