# IGBT Module, Six Pack [Full Bridge], 75 A, 1.45 V, 250 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3775905/)

**URL**: https://novapart.co/products/FS75R06KE3BOSA1/igbt-module-six-pack-full-bridge-75-a-145-v-250-w
**SKU**: FS75R06KE3BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €74.4300
**Stock**: 10+
**Lead Time**: 260 days (indicative)

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| Product Range | EconoPACK 2 |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Solder |
| Power Dissipation | 250W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 75A |
| Power Dissipation Pd | 250W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 75A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Saturation Voltage Vce(On) | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3775905/)

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FS75R06KE3 

**==> picture [86 x 38] intentionally omitted <==**

EconoPACK™�mit�schnellem�Trench/Feldstop�IGBT³�und�Emitter�Controlled3�Diode� EconoPACK™�with�fast�trench/fieldstop�IGBT³�and�Emitter�Controlled3�diode� 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

**初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>FS75R06KE3<br>IGBT-模块<br>IGBT-modules||
|---|---|
|EconoPACK™mitschnellemTrench/FeldstopIGBT³undEmitterControlled3Diode<br>EconoPACK™withfasttrench/fieldstopIGBT³andEmitterControlled3diode<br>preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 70°C, Tvj max= 175°C<br>IC nom<br>75<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>250<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 1,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>4,60<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,145<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>td on<br>0,025<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>tr<br>0,02<br>0,02<br>0,02<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>td off<br>0,21<br>0,24<br>0,25<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>tf<br>0,06<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 4000 A/µs (Tvj= 150°C)<br>RGon= 5,1Ω<br>Eon<br>0,35<br>0,50<br>0,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 5,1Ω<br>Eoff<br>2,40<br>2,80<br>3,00<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>530<br>380<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,60<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,20<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FS75R06KE3 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|600||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|75|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|660<br>610|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||100<br>115<br>125||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 75 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,00<br>6,00<br>7,50||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 4000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,95<br>1,50<br>1,85||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,95|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,30||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�CM date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 

2 

IGBT-模块 IGBT-modules 

## FS75R06KE3 

## **初步数据** 

|#tk | Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 225<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,02|K/W|
|杂散电感,模块||LsCE||19|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>2,50<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|重量<br>Weight||G||180|g|



3 

IGBT-模块 IGBT-modules 

## FS75R06KE3 

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初步数据<br>**----- End of picture text -----**<br>


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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>150 150<br>Tvj = 25°C VGE = 19V<br>135 | Tvj = 125°C J fv} 135 VGE = 17V L y<br>Tvj = 150°C VGE = 15V<br>OO ELT<br>VGE = 13V<br>120 120 VGE = 11V<br>VGE = 9V<br>pe | B iter<br>105 e o 105 JE<br>ee e e eee<br>90 90<br>Bef<br>75 l a 75 eee: ae<br>wi viehil<br>60 60<br>7<br>/<br>45 45<br>30 Se eeee 30 LA.<br>ee<br>15 ee ee 15 eee<br>I ATE<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>eV tStE IGBT, HAAS (BZ) FFA IGBT, HAAS ( HZ!)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l)E C off =f(I C)<br>VCE =20V VGE =H15V,R Gon =5.1 Ω ,R Goff =5.1 Ω ,V CE =300V<br>150 6,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>135 | Tvj = 125°C Tio UL PE 5,5 | Eoff, Tvj = 125°C LE}<br>Tvj = 150°C Eon, Tvj = 150°<br>5,0 Eoff, Tvj = 150°C<br>a — I pope| | yy<br>120<br>4,5<br>105 T PoT TeOTIe 4,0 PppPPP E | tere“ -<br>90 PPP<br>3,5 ee<br>| eg PEperVia<br>75 P| 3,0 Zz 4<br>60 Poff | A FL 2,5 PPE Per<br>2,0<br>45 eeaf ee ee eeeeee<br>“<br>1,5<br>ee /,<br>30<br>1,0<br>15 ee Pi4y | | | | |=<br>P|a || 0,5 ETT| be<br>0 0,0<br>5 6 7 8 9 10 11 12 0 15 30 45 60 75 90 105 120 135 150<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

IGBT-模块 IGBT-modules 

## FS75R06KE3 

## **初步数据** 

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Eon =f{(R)E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =75A,V CE =300V<br>6,0 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>5,5 Eoff, Tvj = 125°C<br>Eon, Tvj = 150°C<br>5,0 Eoff, Tvj = 150°C<br>nn se TT<br>4,5 r e eei aTn LAI|Ce Co|<br>4,0<br>Pp} tt erWz LTE VWLIM EEN | LETT<br>3,5<br>ceece 4 PMT<br>3,0 0,1<br>ee Cae ST Tt<br>2,5<br>| 4 a<br>2,0<br>rT |TATtv |TETyy fd 4 Aa tnt| | ||<br>1,5 ; IC CT<br>1,0 PiaA tt it ty PARA ge i:    1    2    3    4<br>ri[K/W]:   0,036   0,198   0,192   0,174<br>0,5 τ i[s]:    0,01    0,02    0,05    0,1<br>0,0 P|Ht| ft ff df ] ff 0,01 hpTLIO. rl 1<br>0 5 10 15 20 25 30 35 40 45 50 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RwRELIEK IGBT, #2 ( RBSOA ) Fa mESstt Re ee ( BB)<br>I reverse C CE bias )  safe operating area IGBT,Inverter (RBSOA) forward IF F) characteristic of Diode, Inverter (typical)<br>VGE “i sV.R Goff =5.1 Ω ,T vj =150°C a<br>165 150<br>IC, Modul Tvj = 25°C<br>150 I C , Chip 135 Tvj = 125°C<br>Eo f Tvj = 150°C oe<br>135<br>120<br>120<br>PEE) ee<br>105<br>105<br>90<br>90<br>75<br>75<br>Pf ft | e/a<br>60<br>60<br>Pf ft ft TTT<br>45<br>45 ee ee eee |e]<br>30<br>30 Ses es es Oe Ok<br>15 Pf | te 15 Bae? eee<br>0 ee e e 0 E ee  Zane<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FS75R06KE3 

## **初步数据** 

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Erec =f(I F) Erec =f(R G)<br>RGon ay Ω ,V CE =300V IF 7h y CE = 300 V<br>4,0 3,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>a<br>3,5<br>2,5<br>3,0<br>BE RR it<br>2,0<br>2,5<br>COLE Ra ENTE LL<br>2,0 1,5<br>1,5<br>1,0<br>Eee Zane ASE<br>1,0<br>an | PSREEEE<br>0,5<br>PZannne Ss<br>0,5<br>0,0 0,0<br>0 15 30 45 60 75 90 105 120 135 150 0 5 10 15 20 25 30 35 40 45 50<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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ZthJC =f (t) R=f(T)<br>1 ee 100000 SS<br>ZthJC : Diode Rtyp<br>f— SS<br>aOe {__}> —E——————| [___________]<br>Cr V i DO<br>I VET TET es es<br>pe ln | ry.<br>10000<br>UIE TA EAT EEE<br>a} NT========<br>0,1 / a NN eeee<br>pf PN<br>77 i aNNX eee<br>er en ell 1000 ————_————<br>a | el a ee<br>a ee || | ee<br>i:    1    2    3    4<br>ri[K/W]:   0,057   0,3135   0,304   0,2755<br>τ i[s]:    0,01    0,02    0,05    0,1    fet<br>0,01 TIO o4 100 Pf |<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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技术信息�/�Technical�Information<br>IGBT-模块IGBT-modules FS75R06KE3<br>**----- End of picture text -----**<br>


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接线图�/�circuit_diagram_headline<br>J<br>封装尺寸�/�package�outlines<br>In fin e o n<br>**----- End of picture text -----**<br>


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初步数据<br>Preliminary�Data<br>**----- End of picture text -----**<br>


prepared�by:�CM date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 

7 

IGBT-模块 IGBT-modules 

## FS75R06KE3 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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- [Supplier page](https://es.farnell.com/infineon/fs75r06ke3bosa1/igbt-module-600v-75a-250w/dp/3775905)
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