# IGBT Module, Six Pack [Full Bridge], 50 A, 1.85 V, 335 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:1833612/)

**URL**: https://novapart.co/products/FS50R12W2T4B11BOMA1/igbt-module-six-pack-full-bridge-50-a-185-v-335-w
**SKU**: FS50R12W2T4B11BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €24.8000
**Stock**: 10+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:335W; Collector Emitter Voltage V(br)ceo:1.2kV; Trans

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 18Pins |
| Product Range | - |
| Igbt Technology | IGBT 4 |
| Igbt Termination | Press Fit |
| Power Dissipation | 335W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Polarity | N Channel |
| Dc Collector Current | 50A |
| Power Dissipation Pd | 335W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1833612/)

IGBT-Module IGBT-modules 

## FS50R12W2T4_B11 

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VCES = 1200V IC nom = 50A / ICRM = 100A 

- Klimaanlagen 

- • Motorantriebe • Servoumrichter 

- USV-Systeme 

   - 

   - 

   - 

   - 

- 

- 

- VCEsat mit 

- • Niedriges V CEsat 

   - 

   - 

   - VCEsat with 

   - • Low V CEsat 

- Al2O3 Substrat mit kleinem thermischen Widerstand 

- 

- 

- Robuste Montage durch integrierte Befestigungsklammern 

- Al2O3 

- 

- 

• Rugged mounting due to integrated mounting clamps 

1 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FS50R12W2T4_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS50R12W2T4_B11<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-04<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>50<br>83<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>335<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,38<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>4,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,80<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,10<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,13<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,02<br>0,03<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,30<br>0,38<br>0,40<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,045<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 2000 A/µs (Tvj= 150°C)<br>RGon= 15Ω<br>Eon<br>3,60<br>5,10<br>5,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 3800 V/µs (Tvj= 150°C)<br>RGoff= 15Ω<br>Eoff<br>2,50<br>4,10<br>4,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>180<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,40<br>0,45<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,65<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FS50R12W2T4_B11 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|385<br>355<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 2000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||70,0<br>75,0<br>77,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 2000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,50<br>8,80<br>10,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 2000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,70<br>3,20<br>3,60||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,65|0,75|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,85||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�DK date�of�publication:�2013-11-04 approved�by:�MB revision:�2.1 

3 

## Technische�Information�/�Technical�Information 

## IGBT-Module IGBT-modules FS50R12W2T4_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||40||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||4,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||39||g|



Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. 

date�of�publication:�2013-11-04 revision:�2.1 

prepared�by:�DK approved�by:�MB 

4 

## IGBT-Module IGBT-modules 

## FS50R12W2T4_B11 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>100 a 7 100 es | [ov<br>Tvj = 25°C VGE = 19V<br>90 Tvj = 125°C Tepe} 90 | VGE = 17V L i Aa | be<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>80 ee 80 VGE = 11V ane<br>VGE =   9V<br>Pt a PE e e<br>70 70<br>PP ye: E e—<br>60 fe 60 —<br>50 50<br>PPou Awa TE EEey ee<br>40 SRR ,ARE eee 40 i;22a4<br>vA<br>vA<br>30 30<br>20 20<br>ee eeee<br>10 10<br>PA LA<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =15 Ω ,R Goff =15 Ω ,V CE =600V<br>100 16<br>Tvj = 25°C Eon, Tvj = 125°C<br>90 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C 14 Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>80<br>Bop Eby<br>12<br>70<br>10<br>60<br>CCE PAE LE Le<br>50 8<br>o “-<br>40 “OY Atl<br>6<br>30<br>4<br>20<br>2<br>10<br>i Ae a<br>poe CU<br>0 0<br>5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 70 80 90 100<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-Module IGBT-modules 

## FS50R12W2T4_B11 

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switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =50A,V CE =600V<br>14 ————__—_— Eon, Tvj = 125°C 10 a | HH— ZthJH e  : IGBT EeeE e HH} tHee<br>Eoff, Tvj = 125°C<br>12 F Eon, Tvj = 150°C oo o TTT<br>Eoff, Tvj = 150°C<br>ETT T AT HE t)ee)| Ler eeESTHETeeHHI<br>10<br>et 1 EIEA N<br>Pa LETHE 7<br>8 AKat q P it<br>B a ee<br>6 C a ll<br>2ve poop fp nd<br>0,1 a<br>4 7eth<br>2<br>ee a ee |<br>eeee<br>rr ae ene|| |<br>2 i:    1    2    3    4<br>ri[K/W]:   0,042    0,093   0,387   0,528<br>τ i[s]:    0,0005   0,005   0,05    0,2<br>0 0,01<br>0 20 40 60 80 100 120 140 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =15 Ω ,T vj =150°C<br>110 100<br>IC, Modul Tvj = 25°C<br>100 I C , Chip 90 Tvj = 125°C<br>Tvj = 150°C<br>FE _Li TT T FE PLL<br>90<br>80<br>80<br>SR E EHE ai a<br>70<br>70<br>60<br>60<br>50<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>oe oe<br>10 ee 10<br>0 PE PP CL ee 0 e eee eee<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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## IGBT-Module IGBT-modules 

## FS50R12W2T4_B11 

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Erec =f(I F) Erec =f(R G)<br>RGon Ns Ω ,V CE =600V IF = 50K V CE = 600 V<br>5,0 4,5<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>4,5 ( Erec, Tvj = 150°C ey 4,0 Erec, Tvj = 150°C<br>Toy ee ee ee<br>4,0<br>3,5<br>Pt eerer -<br>3,5<br>ae LE LEE<br>3,0<br>Baas aeeee PSP<br>3,0<br>2,5<br>2,5 Pt rza EE CUPPaeeKEERELTT<br>a COLLET<br>2,0<br>2,0 PL AT TT TE Treee<br>1,5<br>ZCi / LE<br>1,5<br>1,0<br>1,0<br>PA eeSee<br>0,5 0,5<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJH =f (t) R=f(T)<br>10 100000<br>ZthJH : Diode Rtyp<br>{— et (_— (SSeS<br>eeePT TTee eeTTT l  eeTTT Pot Se ft fT tTeefT tTeeft fTeefT tTeetT ft Tt<br>a ll pt ft ft tT | TE<br>PT TUT TENE ETE Pt tt tT te tT tT tT TE | tt<br>Mem o KLEE EEE<br>1 10000<br>eee ae oo oo a<br>Sse ee 280s a ET TT ———<br>PTPT TT re ETT Neee ee<br>ot TTtt beth T T T TT TTTT P|ee[TNTNEeeeeeeetT tT tT tT fT tT tT tT<br>ALR AILI MBA SS<br>0,1 20 1000 SS<br>PEE ECE ——<br>a SS<br>PTPT TTTTT TTTETTTTT Poteeeft fT fT Tt tT ft ft fT RAT TTee<br>ed a a<br>i:    1    2    3    4<br>ri[K/W]:   0,085    0,197   0,605   0,614<br>PT T τ i[s]:    0,0005   0,005    T 0,05    0,2    Pt tt tT te tT ET ET EA<br>ME<br>0,01 | imtoo } 3S 100 LLEE<br>0,001 0,01 0,1 1 10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


7 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FS50R12W2T4_B11 

## **Schaltplan�/�circuit_diagram_headline** 

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## **Vorläufige�Daten Preliminary�Data** 

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## **Gehäuseabmessungen�/�package�outlines** 

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Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�DK date�of�publication:�2013-11-04<br>approved�by:�MB revision:�2.1<br>**----- End of picture text -----**<br>


8 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


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FS50R12W2T4_B11<br>**----- End of picture text -----**<br>


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application.<br>**----- End of picture text -----**<br>


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## Links

- [View this product on Novapart](https://novapart.co/products/FS50R12W2T4B11BOMA1/igbt-module-six-pack-full-bridge-50-a-185-v-335-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fs50r12w2t4b11boma1/igbt-l-power-1200v-50a-easypack/dp/1833612)
---

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