# IGBT Module, Six Pack [Full Bridge], 50 A, 1.5 V, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3324630/)

**URL**: https://novapart.co/products/FS50R12W1T7B11BOMA1/igbt-module-six-pack-full-bridge-50-a-15-v-175-c
**SKU**: FS50R12W1T7B11BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €21.3500
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPACK |
| Igbt Technology | IGBT 7 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | - |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 50A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Saturation Voltage Vce(On) | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3324630/)

## FS50R12W1T7_B11 

VCES = 1200V IC nom = 50A / ICRM = 100A 

- Hilfsumrichter 

- Klimaanlagen 

- • Motorantriebe 

- Servoumrichter 

- USV-Systeme 

- CEsat 

- Trenchstop[TM] 

- 

- 

- Al2O3 Substrat mit kleinem thermischen Widerstand 

- 

- 

- 

- 

- 

- 

- 

- 

- CEsat 

- • Trenchstop[TM] 

- 

- 

- Al2O3 

- 

- 

- 

**Digit** 

Datasheet www.infineon.com 

2019-10-31 

FS50R12W1T7_B11 

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## **Vorläufige�Daten Preliminary�Data** 

|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|50|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|100|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 50 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,50<br>1,64<br>1,72|t.b.d.|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 1,28 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,92||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||11,1||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,039||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||0,0079|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 4,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,045<br>0,047<br>0,048||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 4,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,041<br>0,044<br>0,048||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 4,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,27<br>0,33<br>0,35||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 4,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,11<br>0,20<br>0,26||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 50 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 850 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 4,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||4,44<br>6,05<br>7,11||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 50 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 3000 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 4,3Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||3,35<br>5,20<br>6,45||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤7 µs,|ISC||190<br>180||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||1,05||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



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## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|300<br>250|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,72<br>1,59<br>1,52|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 850 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||29,4<br>38,6<br>41,8||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 850 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||3,38<br>6,53<br>8,84||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 850 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||1,36<br>2,59<br>3,47||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||1,60||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

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## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. Tvj op > 150°C ist im Überlastbetrieb zulässig. Detaillierte Angaben sind AN 2018-14 zu entnehmen. 

Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. 

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## **Vorläufige�Daten Preliminary�Data** 

**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C 

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**----- Start of picture text -----**<br>
100 100<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 175°C VGE = 15V<br>VGE = 13V<br>VGE = 11V<br>VGE =   9V<br>75 75<br>50 50<br>25 25<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

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**----- Start of picture text -----**<br>
100<br>Tvj = 25°C<br>Tvj = 125°C<br>Tvj = 175°C<br>75<br>50<br>25<br>0<br>5 6 7 8 9 10 11 12 13<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�4.3� Ω ,�RGoff�=�4.3� Ω ,�VCE�=�600�V 

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**----- Start of picture text -----**<br>
30<br>28 EEonon, T, Tvjvj = 125°C = 175°C<br>Eoff, Tvj = 125°C<br>26 E off , T vj  = 175°C<br>24<br>22<br>20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =50A,V CE =600V VGE =415V,R Gon =43 Ω ,R Goff =43 Ω ,V CE =600V,T vj =175°C<br>24 10<br>22 E E on on , T , T vj vj  = 125°C  = 175 ° C / eei| ttdon r eea<br>Eoff, Tvj = 125°C 7 t doff ee<br>Eoff, Tvj = 175°C t f<br>20<br>18 1<br>16 eeee eee<br>14<br>12 0,1<br>=<br>10 _—_—oeCoal — eS==iz<br>a=<br>8 / ao<br>7<br>6 PY rereeee eee eee 0,01 7<br>ee 7A "ia<br>4 aeeee ee ee<br>2<br>0 0,001<br>0 10 20 30 40 50 0 10 20 30 40 50 60 70 80 90 100<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) dv/dt= f(R G)<br>VGE =415V,1 C =50A,V CE =600V,T vj =175°C VGE =+15V,1 C =50A,V CE =600V,T vj =25°C<br>10 aaaa 12<br>| ttdon r rr 11 dv/dt-on at 1/10 × I dv/dt-off at IC C<br>t doff<br>t f<br>10<br>9<br>1 8<br>7<br>6<br>5<br>™~™<br>™~<br>0,1 4<br>—_ —_ ~<br>3<br>2<br>1<br>0,01 0<br>0 10 20 30 40 50 0 10 20 30 40 50<br>RG [ Ω ] RG [ Ω ]<br>t [µs]<br>dv/dt [V/ns]<br>**----- End of picture text -----**<br>


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## **(RBSOA)** 

ZthJH 

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**----- Start of picture text -----**<br>
IC =f(V CE)<br>VGE =415V,R Goff =43 Ω ,T vj =175°C<br>10 120<br>ZthJH  : IGBT IC, Modul<br>ST<br>IC, Chip<br>100<br>1 80<br>PtSet ees eee eentt<br>60<br>0,1 7ASe ctitiemenitiimemen [eH] memetii 40<br>20<br>i: 1 2 3 4<br>ri[K/W]: 0,03 0,098 0,28 0,642<br>τ i[s]: 0,000607 0,01 0,0654 0,206<br>0,01 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400<br>t [s] VCE  [V]<br>  [K/W]thJH  [A]IC<br>Z<br>**----- End of picture text -----**<br>


C=f(V CE) VGE =0OV,T vj 

> VGE =f(Q G) 

> IC =50A,T vj =25°C 

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**----- Start of picture text -----**<br>
1000 Oe 15<br>Cies VCE = 600 V<br>Coes<br>Cres<br>100 10<br>a<br>10 5<br>Lf [ff]<br>1 0<br>———<br>0,1 ————iee -5<br>0,01 -10<br>0,001 -15<br>0 10 20 30 40 50 60 70 80 90 100 0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0<br>VCE [V] QG [µC]<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>


Datasheet 

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> IF =f(V F)) 

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**----- Start of picture text -----**<br>
F =f(V F)) Erec =fil F)<br>RGon =43 Ω ,V CE =600V<br>100 4,0<br>Tvj = 25°C Erec, Tvj = 125°C<br>TTvjvj = 125°C = 175°C // 3,5 Erec, Tvj = 175°C a-T<br>/ [/]<br>/ [/]<br>/<br>75 / 3,0<br>i/<br>‘]<br>/ /<br>i//if 2,5 / /<br>/ / /<br>50 /i//i// rt / 2,0 ///<br>/j//i/ 1,5 / /<br>t/ / /<br>25 fl 1,0<br>ff<br>7<br>"4 0,5<br>v/<br>ee<br>0 0,0<br>0,00 0,50 1,00 1,50 2,00 2,50 0 10 20 30 40 50 60 70 80 90 100<br>VF [V] IF [A]<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>


> Erec =f(R G) ZthJH 

> IF =50A,V CE =600V 

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**----- Start of picture text -----**<br>
4,0 10 aee<br>Erec, Tvj = 125°C ZthJH  : Diode<br>Erec, Tvj = 175°C H—PUPEP<br>ne PT eee<br>3,5<br>\<br>\<br>\<br>3,0 \<br>1<br>)\ WY aeon|<br>2,5<br>Se SS<br>. . EeeC4 EH<br>2,0<br>~~<br>“XN<br> “<br> N<br>1,5<br>~~ Hl<br>0,1<br>1,0<br>0,5 i: ri[K/W]: 1 0,073 2 0,24 3 0,797 4 0,49<br>τ i[s]: 0,00069 0,0122 0,0808 0,251<br>0,0 0,01<br>0 10 20 30 40 50 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>  [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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## **Vorläufige�Daten Preliminary�Data** 

**NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(TNTC) 

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**----- Start of picture text -----**<br>
100000<br>Rtyp<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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## **Schaltplan�/�Circuit�diagram** 

## **Vorläufige�Daten Preliminary�Data** 

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J<br>**----- End of picture text -----**<br>


## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/FS50R12W1T7B11BOMA1/igbt-module-six-pack-full-bridge-50-a-15-v-175-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fs50r12w1t7b11boma1/igbt-module-six-n-ch-1-2kv-50a/dp/3324630)
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