# IGBT Module, Six Pack [Full Bridge], 70 A, 1.45 V, 205 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3155174/)

**URL**: https://novapart.co/products/FS50R06W1E3BOMA1/igbt-module-six-pack-full-bridge-70-a-145-v-205-w
**SKU**: FS50R06W1E3BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €19.0200
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:Six N Channel; DC Collector Current:70A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:205W; Collector Emitter Voltage V(br)ceo:600V; T

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPack |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 205W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 70A |
| Power Dissipation Pd | 205W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 70A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Saturation Voltage Vce(On) | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155174/)

IGBT-Module IGBT-modules 

## FS50R06W1E3 

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VCES = 600V IC nom = 50A / ICRM = 100A 

- Klimaanlagen 

- • Motorantriebe • Servoumrichter 

- USV-Systeme 

   - 

   - 

   - 

   - 

- 

- 

- VCEsat mit 

- • Niedriges V CEsat 

   - 

   - 

   - VCEsat with 

   - • Low V CEsat 

- Al2O3 Substrat mit kleinem thermischen Widerstand 

- 

- Lötverbindungstechnik 

- Robuste Montage durch integrierte Befestigungsklammern 

- Al2O3 

- 

- 

- Rugged mounting due to integrated mounting clamps 

1 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS50R06W1E3 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS50R06W1E3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 90°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>50<br>70<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>205<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,50<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>3,10<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,095<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 8,2Ω<br>td on<br>0,023<br>0,023<br>0,23<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 8,2Ω<br>tr<br>0,015<br>0,018<br>0,02<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 8,2Ω<br>td off<br>0,20<br>0,22<br>0,23<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 8,2Ω<br>tf<br>0,10<br>0,13<br>0,14<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 300 V, LS= 50 nH<br>VGE= ±15 V, di/dt = 2600 A/µs (Tvj= 150°C)<br>RGon= 8,2Ω<br>Eon<br>0,46<br>0,56<br>0,65<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 300 V, LS= 50 nH<br>VGE= ±15 V, du/dt = 4200 V/µs (Tvj= 150°C)<br>RGoff= 8,2Ω<br>Eoff<br>1,20<br>1,50<br>1,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>350<br>250<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,66<br>0,73<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,80<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FS50R06W1E3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|370<br>330<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|2,00|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||60,0<br>68,0<br>72,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,10<br>3,40<br>3,95||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 2600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,42<br>0,71<br>0,83||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,00|1,10|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,85||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.1 

3 

## Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules FS50R06W1E3 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||25||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||4,50||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|Gewicht<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 30 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 30 A rms per connector pin. 

date�of�publication:�2013-10-03 revision:�2.1 

prepared�by:�DK approved�by:�MB 

4 

## IGBT-Module IGBT-modules Technische Information FS50R06W1E3 / Technical Information 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>100 | 100 es<br>aa<br>Tvj = 25°C VGE = 19 V<br>90 Tvj = 125°C / / 90 P VGE = 17 V OP<br>E Tvj = 150°C J) VGE = 15 V |<br>VGE = 13 V<br>80 80 VGE = 11 V<br>es 7 | pee eT |<br>VGE = 9 V<br>p o F E<br>70 70<br>eee ) eee<br>60 60<br>Pe l waa eee<br>50 50<br>ff jiehi | /<br>40 40<br>/<br>/<br>30 30<br>20 20<br>ee eee eee) )a e<br>10 10<br>Se/ hi.<br>0 0<br>| ) DAP<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =82 Ω ,R Goff =82 Ω ,V CE =300V<br>100 3,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>90 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>2,5 Eoff, Tvj = 150°C<br>ee Ee ZL<br>80<br>70 | | [Lf Vaateo<br>pf t ¢ 2,0 a 1\0°<br>PP ZF<br>60<br>50 1,5<br>pf | | ae<br>40<br>pf | | al<br>1,0<br>30<br>pf | |g | - =<br>i Z pa<br>20<br>Pay | a<br>0,5<br>10<br>ae Ann as<br>0 0,0<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70 80 90 100<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-Module IGBT-modules 

## FS50R06W1E3 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH = f (t)<br>VGE =+15V,1 C =50A,V CE =300V<br>6,0 Se | 10 PtTTT<br>Eon, Tvj = 125°C ZthJH : IGBT<br>H— Soo<br>Eoff, Tvj = 125°C<br>Eon, Tvj = 150°C y i ee ee ee<br>5,0 E Eoff, Tvj = 150°C L iye aooo a ll<br>TT] | LAIVi | aEE COCO| CC||<br>4,0<br>3,0 1<br>/ E H<br>A ee|| a en ll<br>2,0 | syleI _to-4aa= PEACOA TECTH  PTEAOTC<br>1,0 a PPP FLU i:    1    2    3    4<br>ri[K/W]:   0,083    0,193   0,586   0,588<br>τ i[s]:    0,0005   0,005   0,05    0,2<br>A<br>0,0 0,1<br>0 10 20 30 40 50 60 70 80 90 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ee V,R Goff =82 Ω ,T vj =150°C<br>110 100<br>IC, Modul Tvj = 25°C<br>100 I C , Chip 90 Tvj = 125°C<br>ETT F Tvj = 150°C OO<br>90<br>80<br>80<br>PERE CH) FEE E EEE Ege<br>70<br>70<br>60<br>60<br>eee TTT eT<br>50<br>50<br>See eee ie<br>40<br>40<br>P| | | | cr eae<br>30<br>30 P| | | /<br>20<br>20<br>ee anne ane<br>10 10<br>SEES Coe<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FS50R06W1E3 

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**----- Start of picture text -----**<br>
Erec =fi(l F) Erec =f(R G)<br>RGon ae Ω ,V CE =300V IF -50RV CE = 300 V<br>1,8 1,2<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>1,6 Erec, Tvj = 150°C Erec, Tvj = 150°C<br>EO) Ey<br>1,0<br>1,4<br>1,2 0,8<br>1,0<br>0,6<br>0,8 BRR eae x<br>BEEZ aa :<br>0,6 0,4<br>0,4<br>CAPT) Py ARS<br>0,2<br>ALL<br>0,2 EL<br>PEELE TELLER.<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJH = f(t) R=f(T)<br>10 ee 100000 ee |<br>H ZthJH : Diode e — Rtyp —————<br>a<br>a<br>ll DO<br>a es ee<br>ee | ee | 10000 ry.<br>I- EEE<br>vue SS<br>1 aSeaZeeae Se rePSENe ee eeeEEE<br>a2 | | aNNX eee<br>LL PATTIE FETE TTP 1000 ————_————<br>AA IE ETT) a ee<br>i:    1    2    3    4<br>ri[K/W]:   0,157    0,337   0,758   0,598<br>CO τ i[s]:    0,0005   0,005   0,05    0,2    PN<br>0,1 TCO or 100 Pt tT TE EE<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


7 

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Technische�Information�/�Technical�Information<br>IGBT-ModuleIGBT-modules FS50R06W1E3<br>**----- End of picture text -----**<br>


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prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.1 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS50R06W1E3 

## **Nutzungsbedingungen** 

application. 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/FS50R06W1E3BOMA1/igbt-module-six-pack-full-bridge-70-a-145-v-205-w)
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- [Supplier page](https://es.farnell.com/infineon/fs50r06w1e3boma1/igbt-module-6-n-ch-600v-70a-205w/dp/3155174)
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