# IGBT Module, Six Pack, 450 A, 1.95 V, 2.4 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3677501/)

**URL**: https://novapart.co/products/FS450R17OE4BOSA1/igbt-module-six-pack-450-a-195-v-24-kw-150-c
**SKU**: FS450R17OE4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €531.5700
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 2.4kW |
| Igbt Configuration | Six Pack |
| Transistor Mounting | Panel |
| Dc Collector Current | 450A |
| Power Dissipation Pd | 2.4kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 450A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector Emitter Saturation Voltage Vce(On) | 1.95V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3677501/)

IGBT-Module IGBT-modules 

## FS450R17OE4 

VCES = 1700V 

IC nom = 450A / ICRM = 900A 

- Hilfsumrichter 

- Hochleistungsumrichter 

- Motorantriebe 

- Windgeneratoren 

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- Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom 

   - High Short Circuit Capability, Self Limiting Short 

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- T 

   - T 

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1 

> IGBT-ModuleIGBT-modules FS450R17OE4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,Wechselrichter�/�IGBT,Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS450R17OE4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:CU<br>approvedby:WR<br>dateofpublication:2013-11-05<br>revision:3.0<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 90°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>450<br>630<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>900<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>2400<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>VCE sat<br>1,95<br>2,35<br>2,45<br>2,30<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 18,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>4,60<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,7<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>36,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,15<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 450 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>td on<br>0,19<br>0,22<br>0,22<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 450 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>tr<br>0,09<br>0,09<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 450 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>td off<br>0,75<br>0,89<br>0,93<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 450 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>tf<br>0,11<br>0,16<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 450 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 4800 A/µs (Tvj= 150°C)<br>RGon= 3,3Ω<br>Eon<br>130<br>165<br>175<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 450 A, VCE= 900 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3100 V/µs (Tvj= 150°C)<br>RGoff= 3,3Ω<br>Eoff<br>81,5<br>135<br>155<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,062 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,041<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FS450R17OE4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|450|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|30000<br>27500<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||425<br>525<br>550||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 450 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||105<br>185<br>205||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 4800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||52,0<br>105<br>120||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,11|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,047||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�CU date�of�publication:�2013-11-05 approved�by:�WR revision:�3.0 

3 

IGBT-Module IGBT-modules 

## FS450R17OE4 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||3,4<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||18,5<br>12,6||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||16,0<br>10,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität||LsCE||20||nH|
|Modulleitungswiderstand, Anschlusse -|||||||
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,10||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee eee~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~eee~~||||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||924||g|



4 

## IGBT-Module IGBT-modules 

## FS450R17OE4 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>900 900<br>Tvj = 25°C VGE = 20V<br>T | vj = 125°C ’ v e V s GE = 15V | / ,<br>750 Tvj = 150°C 4 / 750 VVGEGE = 12V = 10V /<br>VGE = 9V<br>f VGE = 8V<br>/<br>600 600<br>a<br>F<br>/ ’ °<br>450 450<br>va ‘iy ° 2<br>ue /) c 4<br>300 300<br>Ae ne<br>L —<br>oo<br>150 150<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


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IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =33 Ω ,R Goff =33 Ω ,V CE =900V<br>900 550<br>Tvj = 25°C Eon, Tvj = 125°C<br>T _ vj = 125°C ei 500 fF Eon, Tvj = 150°C<br>Tvj = 150°C Eoff, Tvj = 125°C<br>750 EJ fe 450 poo Eoff, Tvj = 150°C<br>400<br>600<br>350<br>300<br>450<br>250<br>200<br>300<br>/ 150 inea<br>100<br>150<br>50<br>0 0<br>5 6 7 8 9 10 11 12 13 0 150 300 450 600 750 900<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-Module IGBT-modules 

## FS450R17OE4 

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switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =450A,V CE =900V<br>800 az 0,1 a<br>|ee eee<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eon, Tvj = 150°C ’ H— SO E ee<br>700 Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>eeaw a<br>— 4 PT eee TT<br>600<br>| S y ne<br>500 Pf} ft |my)a ealIIIT<br>a CUA<br>400 0,01<br>Pi TIM UT<br>300200 P|PY}WAwT]tT |wtfy|fy| | Pp|Oe=AeefTVE T|Mi T eeTTTA<br>a i:    1    2    3    4<br>100 ri[K/W]:   0,0055   0,0439   0,0085   0,0041<br>τ i[s]:    0,001    0,037    0,425    9,81<br>PEE) LA fl<br>0 0,001<br>0 5 10 15 20 25 30 35 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =3.3 Ω ,T vj =150°C<br>1050 900<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>900 Ld E Tvj = 150°C ae<br>750<br>750<br>600<br>600<br>LEE Py ey<br>450<br>450<br>300<br>300<br>150<br>150<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FS450R17OE4 

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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =3.3 Ω ,V CE =900V IF =450A,V CE =900V<br>180 150<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>160 Erec, Tvj = 150°C 140 Erec, Tvj = 150°C<br>130<br>140 a 120<br>120 e eeeeee ee 110 e e<br>100<br>100<br>90<br>80<br>80<br>4A eee NS eee<br>70<br>60 4é Neeeeee~<br>60 ~ = ee<br>40 eee 50<br>40<br>20 eeee ee<br>30<br>0 20<br>0 150 300 450 600 750 900 0 5 10 15 20 25 30 35<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC = f (t) R=f(T)<br>1 100000<br>' {— ZthJC : Diode et a i [I Rtyp a ———<br>o o TT jy<br>PT nn  TT TTT TTT a e eee ee<br>0,1 10000<br>eea ee ee PNSS<br>PT TT Ar TT ES NN se ee<br>PT TT CT TTT TTT a Ne a ee<br>PN<br>A ee<br>CRA 2 ee eee<br>0,01 1000<br>Yo | tT ee ee a<br>a a a<br>PT TTT ETT NS<br>PT [TT] TTT TTT a eeee<br>i:    1    2    3    4<br>ri[K/W]:   0,0082   0,0784   0,0141   0,0093<br>a τ i[s]:    0,0012   0,033    0,253    7,49    | | ce ee ee<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS450R17OE4 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS450R17OE4 

## **Nutzungsbedingungen** 

application. 

9 



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- [Supplier page](https://es.farnell.com/infineon/fs450r17oe4bosa1/igbt-module-1-7kv-450a-2-4kw/dp/3677501)
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