# IGBT Module, Six Pack [Full Bridge], 660 A, 1.75 V, 2.25 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2839518/)

**URL**: https://novapart.co/products/FS450R12OE4BOSA1/igbt-module-six-pack-full-bridge-660-a-175-v-225
**SKU**: FS450R12OE4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €489.4400
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:660A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:2.25kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transi

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 2.25kW |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 660A |
| Power Dissipation Pd | 2.25kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 660A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839518/)

IGBT-Module IGBT-modules 

## FS450R12OE4 

VCES = 1200V 

IC nom = 450A / ICRM = 900A 

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• High Short Circuit Capability, Self Limiting Short 

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1 

> IGBT-ModuleIGBT-modules FS450R12OE4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,Wechselrichter�/�IGBT,Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS450R12OE4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:CU<br>approvedby:WR<br>dateofpublication:2013-11-05<br>revision:3.2<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>450<br>660<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>900<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>2250<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 17,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,7<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>28,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,55<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>td on<br>0,19<br>0,22<br>0,22<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,0Ω<br>tr<br>0,06<br>0,06<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>td off<br>0,44<br>0,55<br>0,57<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,0Ω<br>tf<br>0,06<br>0,10<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 450 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 6300 A/µs (Tvj= 150°C)<br>RGon= 1,0Ω<br>Eon<br>25,0<br>40,5<br>44,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 450 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3100 V/µs (Tvj= 150°C)<br>RGoff= 1,0Ω<br>Eoff<br>37,0<br>56,5<br>63,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,067 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,042<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FS450R12OE4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|450|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|30000<br>27500<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 6300 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||415<br>470<br>505||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 450 A, - diF/dt = 6300 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||48,0<br>89,0<br>105||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 6300 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||22,5<br>39,5<br>45,5||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,10|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,046||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�CU date�of�publication:�2013-11-05 approved�by:�WR revision:�3.2 

3 

IGBT-Module IGBT-modules 

## FS450R12OE4 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Innere Isolation<br>Internal isolation|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~<br>Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~||2,5<br>Al2O3||kV|
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||18,5<br>12,6||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||16,0<br>10,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|min.<br>typ.<br>max.<br>20<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,10||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M|-40<br>3,00|-|125<br>6,00|°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||924||g|



4 

## IGBT-Module IGBT-modules 

## FS450R12OE4 

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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>900 a | , 7 900 es|<br>Tvj = 25°C a ra VGE = 19V 7<br>Tvj = 125°C VGE = 17V<br>750 T —— vj = 150°C fe 750 VVGEGE = 15V = 13V /<br>VGE = 11V<br>(f i / /<br>VGE = 9V<br>600 600<br>he /) , / — .<br>a // fi a °<br>450 450<br>,<br>7vA |<br>J<br>300 300<br>/<br>a<br>150 150<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


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IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =1 Ω ,R Goff =1 Ω ,V CE =600V<br>900 140<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>750 Ee Tvj = 150°C : 120 EEoffoff, T, Tvjvj = 125°C = 150°C 7<br>—— 7 So<br>100<br>600 /<br>80 vA 4 “4wyf<br>7<br>450 [; foe<br>60<br>300<br>40<br>150<br>20<br>0 0<br>5 6 7 8 9 10 11 12 13 0 150 300 450 600 750 900<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-Module IGBT-modules 

## FS450R12OE4 

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Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =450A,V CE =600V<br>180 a 0,1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>160 [= Eon, Tvj = 150°C 1) ft | | z eHee e HE ee e<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C Wz a | |<br>ee eee ee nent<br>140 SEREEEEZen a a, PATPLN en A E ETI ET<br>120 EERE < oyAEee U/ ELIET<br>100<br>7 |<br>0,01<br>80 Pt} fee}y | fd esHEHAnise| een 001 (en ERT GL TTI<br>60 Z JL WA a |aea 7] TT|TTTa ee ||<br>B e<br>40<br>i:    1    2    3    4<br>20 Pry]aEEa ee aa ee0 ri[K/W]:   0,0037    eea 0,0071   0,047    0,0093    || |<br>τ i[s]:    0,0004   0,0083   0,0471   0,9<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =1 Ω ,T vj =150°C<br>1000 900<br>IC, Modul Tvj = 25°C<br>900 IC, Chip Tvj = 125°C<br>Tvj = 150°C<br>750<br>ee = t ;<br>800<br>700<br>600<br>600<br>500 450<br>400<br>300<br>300<br>200<br>150<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FS450R12OE4 

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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =1 Ω ,V CE =600V IF =450A,V CE =600V<br>60 a 60 LS<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>50 50<br>40 40<br>ae ENE<br>30 30<br>20 20<br>10 10<br>0 0<br>0 150 300 450 600 750 900 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC = f (t) R=f(T)<br>1 100000<br>' {— ZthJC : Diode et a i [I Rtyp a ———<br>o o TT jy<br>PT nn  TT TTT TTT a e eee ee<br>EM<br>0,1 ooLEME LUI 10000 MKee<br>See ey il eT TT es<br>PT TT eT ES NN se ee<br>PTa  TT TTT TTT a Ne a eeee<br>A pot NE<br>ey | a Pot KE fT tT ft<br>ACM<br>0,01 LL LIM LUM 1000 LENNIE<br>Pt Po}ee| A<br>a a a<br>PT TTT ETT NS<br>PT [TT] TTT TTT a eeee<br>i:    1    2    3    4<br>ri[K/W]:   0,0118   0,0685   0,0173   0,0033<br>a τ i[s]:    0,0011   0,0354   0,538    0,9    | | ce ee ee<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS450R12OE4 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS450R12OE4 

## **Nutzungsbedingungen** 

application. 

9 



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- [Supplier page](https://es.farnell.com/infineon/fs450r12oe4bosa1/igbt-module-n-ch-1-2kv-660a/dp/2839518)
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