# IGBT Module, Three level Inverter, 20 A, 1.32 V, 20 mW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:4412434/)

**URL**: https://novapart.co/products/FS3L40R07W2H5FB70BPSA1/igbt-module-three-level-inverter-20-a-132-v-mw-150
**SKU**: FS3L40R07W2H5FB70BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €46.3400
**Stock**: 10+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPACK 2B Series |
| Igbt Technology | Trench Field Stop |
| Igbt Termination | Press Fit |
| Power Dissipation | 20mW |
| Igbt Configuration | Three level Inverter |
| Transistor Mounting | Panel |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.32V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4412434/)

**FS3L40R07W2H5F_B70 EasyPACK[™] 2B module** _ 

## **Final datasheet** 

## **EasyPACK[™] 2B module with TRENCHSTOP[™] 5 H5 and CoolSiC[™] Schottky diode and PressFIT / NTC** 

## **Features** 

- Electrical features 

- VCES = 650 V 

- IC nom = 40 A / ICRM = 80 A 

- CoolSiC[TM] Schottky diode gen 5 

- Low switching losses 

- Increased blocking voltage capability up to 650 V 

- Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder 

- Mechanical features 

- Rugged mounting due to integrated mounting clamps 

- AlN substrate with low thermal resistance 

- Compact design 

- PressFIT contact technology 

## **Potential applications** 

- Three-level applications 

- UPS systems 

- Solar applications 

- Motor drives 

## **Product validation** 

- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 

## **Description** 

Please read the sections "Important notice" and "Warnings" at the end of this document 

Datasheet www.infineon.com 

Revision 1.00 2024-04-09 

**FS3L40R07W2H5F_B70 EasyPACK[™] 2B module** 

**Table of contents** 

**==> picture [105 x 47] intentionally omitted <==**

## **Table of contents** 

||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3|
|**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**4**|**IGBT, 3-Level**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6|
|**5**|**Diode, 3-Level**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**6**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8|
|**7**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|**8**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17|
|**9**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18|
|**10**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21|



Datasheet 

Revision 1.00 2024-04-09 

2 

**FS3L40R07W2H5F_B70 EasyPACK[™] 2B module** 

**==> picture [105 x 47] intentionally omitted <==**

## **1  Package** 

## **1 Package** 

|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|||
|---|---|---|---|---|---|---|
|**Table 1**<br>**Insulation coordination**|||||||
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**|
|Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 60 s|||3.0|kV|
|Isolation test voltage NTC|_V_ISOL(NTC)|RMS, f = 50 Hz,_t_= 60 s|||3.0|kV|
|Internal isolation||basic insulation (class 1, IEC 61140)|||AlN||
|Comparative tracking<br>index|_CTI_||||> 200||
|Relative thermal index<br>(electrical)|_RTI_|housing|||140|°C|



|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Stray inductance module|_L_sCE|||36||nH|
|Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH= 25 °C, per switch||8.2||mΩ|
|Storage temperature|_T_stg||-40||125|°C|
|Mounting force per clamp|_F_||40||80|N|
|Weight|_G_|||42||g|



_**Note** : The current under continuous operation is limited to 25A rms per connector pin_ 

## **2 IGBT, Inverter** 

|**Table 3**<br>**Maximum rated values**|**Table 3**<br>**Maximum rated values**|**Table 3**<br>**Maximum rated values**|**Table 3**<br>**Maximum rated values**|**Table 3**<br>**Maximum rated values**|**Table 3**<br>**Maximum rated values**|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Collector-emitter voltage|_V_CES||_T_vj= 25 °C|650|V|
|Implemented collector<br>current|_I_CN|||40|A|
|Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 115 °C|20|A|
|Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||80|A|
|Gate-emitter peak voltage|_V_GES|||±20|V|



Datasheet 

Revision 1.00 2024-04-09 

3 

**FS3L40R07W2H5F_B70 EasyPACK[™] 2B module** 

**==> picture [105 x 47] intentionally omitted <==**

## **2  IGBT, Inverter** 

## **Characteristic values** 

|||||||||
|---|---|---|---|---|---|---|---|
|**Table 4**<br>**Characteristic values**||||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 20 A,_V_GE= 15 V|_T_vj= 25 °C||1.32|1.81|V|
||||_T_vj= 125 °C||1.39|||
||||_T_vj= 150 °C||1.41|||
|Gate threshold voltage|_V_GEth|_I_C= 0.35 mA, VCE= VGE,_T_vj= 25 °C||3.85|4.60|5.35|V|
|Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 300 V|||0.152||µC|
|Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω|
|Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||1.94||nF|
|Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.007||nF|
|Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.018|mA|
|Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA|
|Turn-on delay time<br>(inductive load)|_t_don|_I_C= 20 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gon= 7.5 Ω|_T_vj= 25 °C||0.011||µs|
||||_T_vj= 125 °C||0.012|||
||||_T_vj= 150 °C||0.012|||
|Rise time (inductive load)|_t_r|_I_C= 20 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gon= 7.5 Ω|_T_vj= 25 °C||0.009||µs|
||||_T_vj= 125 °C||0.014|||
||||_T_vj= 150 °C||0.015|||
|Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 20 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gof= 7.5 Ω|_T_vj= 25 °C||0.078||µs|
||||_T_vj= 125 °C||0.099|||
||||_T_vj= 150 °C||0.105|||
|Fall time (inductive load)|_t_f|_I_C= 20 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gof= 7.5 Ω|_T_vj= 25 °C||0.018||µs|
||||_T_vj= 125 °C||0.029|||
||||_T_vj= 150 °C||0.046|||
|Turn-on energy loss per<br>pulse|_E_on|_I_C= 20 A,_V_CC= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 7.5 Ω, di/dt =<br>1100 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.17||mJ|
||||_T_vj= 125 °C||0.2|||
||||_T_vj= 150 °C||0.21|||
|Turn-of energy loss per<br>pulse|_E_of|_I_C= 20 A,_V_CC= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 7.5 Ω, dv/dt =<br>6250 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.1||mJ|
||||_T_vj= 125 °C||0.2|||
||||_T_vj= 150 °C||0.22|||
|Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,λgrease= 1 W/(m·K)|||1.36||K/W|
|**(table continues...)**||||||||



Datasheet 

Revision 1.00 2024-04-09 

4 

**FS3L40R07W2H5F_B70 EasyPACK[™] 2B module** 

**==> picture [105 x 47] intentionally omitted <==**

## **3  Diode, Inverter** 

|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Temperature under<br>switching conditions|_T_vj op||-40||150|°C|



## **3 Diode, Inverter** 

|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|||||
|---|---|---|---|---|---|---|
|**Table 5**<br>**Maximum rated values**|||||||
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**|
|Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C||650|V|
|Implemented forward<br>current|_I_FN||||25|A|
|Continuous DC forward<br>current|_I_F||||20|A|
|Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms|||50|A|
|I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C||55|A²s|
||||_T_vj= 150 °C||50||



**Table 6 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Forward voltage|_V_F|_I_F= 20 A,_V_GE= 0 V|_T_vj= 25 °C||1.65|2.15|V|
||||_T_vj= 125 °C||1.55|||
||||_T_vj= 150 °C||1.50|||
|Peak reverse recovery<br>current|_I_RM|_V_CC= 300 V,_I_F= 20 A,<br>_V_GE= -15 V, -diF/dt =<br>1100 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||14||A|
||||_T_vj= 125 °C||18|||
||||_T_vj= 150 °C||20|||
|Recovered charge|_Q_r|_V_CC= 300 V,_I_F= 20 A,<br>_V_GE= -15 V, -diF/dt =<br>1100 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.77||µC|
||||_T_vj= 125 °C||1.2|||
||||_T_vj= 150 °C||1.44|||
|Reverse recovery energy|_E_rec|_V_CC= 300 V,_I_F= 20 A,<br>_V_GE= -15 V, -diF/dt =<br>1100 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.16||mJ|
||||_T_vj= 125 °C||0.22|||
||||_T_vj= 150 °C||0.27|||
|Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 1 W/(m·K)|||1.78||K/W|



**(table continues...)** 

Datasheet 

Revision 1.00 2024-04-09 

5 

**FS3L40R07W2H5F_B70 EasyPACK[™] 2B module** 

**==> picture [105 x 47] intentionally omitted <==**

## **4  IGBT, 3-Level** 

|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Temperature under<br>switching conditions|_T_vj op||-40||150|°C|



## **4 IGBT, 3-Level** 

|**4**<br>**IGBT, 3-Level**|**4**<br>**IGBT, 3-Level**|**4**<br>**IGBT, 3-Level**|||||
|---|---|---|---|---|---|---|
|**Table 7**<br>**Maximum rated values**|||||||
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**|
|Collector-emitter voltage|_V_CES||_T_vj= 25 °C||650|V|
|Implemented collector<br>current|_I_CN||||40|A|
|Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 115 °C||20|A|
|Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op|||80|A|
|Gate-emitter peak voltage|_V_GES||||±20|V|



**Table 8 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 20 A,_V_GE= 15 V|_T_vj= 25 °C||1.32|1.81|V|
||||_T_vj= 125 °C||1.39|||
||||_T_vj= 150 °C||1.41|||
|Gate threshold voltage|_V_GEth|_I_C= 0.35 mA, VCE= VGE,_T_vj= 25 °C||3.85|4.60|5.35|V|
|Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 300 V|||0.152||µC|
|Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω|
|Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||1.94||nF|
|Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.007||nF|
|Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.018|mA|
|Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA|
|Turn-on delay time<br>(inductive load)|_t_don|_I_C= 20 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gon= 3.9 Ω|_T_vj= 25 °C||0.011||µs|
||||_T_vj= 125 °C||0.012|||
||||_T_vj= 150 °C||0.012|||



## **(table continues...)** 

Datasheet 

Revision 1.00 2024-04-09 

6 

**FS3L40R07W2H5F_B70 EasyPACK[™] 2B module** 

**==> picture [105 x 47] intentionally omitted <==**

## **5  Diode, 3-Level** 

|**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Rise time (inductive load)|_t_r|_I_C= 20 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gon= 3.9 Ω|_T_vj= 25 °C||0.005||µs|
||||_T_vj= 125 °C||0.006|||
||||_T_vj= 150 °C||0.006|||
|Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 20 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gof= 3.9 Ω|_T_vj= 25 °C||0.069||µs|
||||_T_vj= 125 °C||0.085|||
||||_T_vj= 150 °C||0.091|||
|Fall time (inductive load)|_t_f|_I_C= 20 A,_V_CC= 300 V,<br>_V_GE= ±15 V,_R_Gof= 3.9 Ω|_T_vj= 25 °C||0.021||µs|
||||_T_vj= 125 °C||0.052|||
||||_T_vj= 150 °C||0.065|||
|Turn-on energy loss per<br>pulse|_E_on|_I_C= 20 A,_V_CC= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 3.9 Ω, di/dt =<br>3500 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.08||mJ|
||||_T_vj= 125 °C||0.09|||
||||_T_vj= 150 °C||0.09|||
|Turn-of energy loss per<br>pulse|_E_of|_I_C= 20 A,_V_CC= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 3.9 Ω, dv/dt =<br>6210 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.11||mJ|
||||_T_vj= 125 °C||0.19|||
||||_T_vj= 150 °C||0.21|||
|Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,λgrease= 1 W/(m·K)|||1.36||K/W|
|Temperature under<br>switching conditions|_T_vj op|||-40||150|°C|



## **5 Diode, 3-Level** 

|**5**<br>**Diode, 3-Level**|**5**<br>**Diode, 3-Level**|**5**<br>**Diode, 3-Level**||||
|---|---|---|---|---|---|
|**Table 9**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V|
|Continuous DC forward<br>current|_I_F|||20|A|
|Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||40|A|
|I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|65|A²s|
||||_T_vj= 150 °C|65||



Datasheet 

Revision 1.00 2024-04-09 

7 

**FS3L40R07W2H5F_B70 EasyPACK[™] 2B module** 

**==> picture [105 x 47] intentionally omitted <==**

## **6  NTC-Thermistor** 

## **Characteristic values** 

|||||||||
|---|---|---|---|---|---|---|---|
|**Table 10**<br>**Characteristic values**||||||||
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Forward voltage|_V_F|_I_F= 20 A,_V_GE= 0 V|_T_vj= 25 °C||1.45|1.85|V|
||||_T_vj= 125 °C||1.60|||
||||_T_vj= 150 °C||1.65|||
|Peak reverse recovery<br>current|_I_RM|_V_CC= 300 V,_I_F= 20 A,<br>_V_GE= 15 V, -diF/dt = 3500<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||19||A|
||||_T_vj= 125 °C||17|||
||||_T_vj= 150 °C||16|||
|Recovered charge|_Q_r|_V_CC= 300 V,_I_F= 20 A,<br>_V_GE= 15 V, -diF/dt = 3500<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.13||µC|
||||_T_vj= 125 °C||0.12|||
||||_T_vj= 150 °C||0.12|||
|Reverse recovery energy|_E_rec|_V_CC= 300 V,_I_F= 20 A,<br>_V_GE= 15 V, -diF/dt = 3500<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.015||mJ|
||||_T_vj= 125 °C||0.015|||
||||_T_vj= 150 °C||0.015|||
|Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 1 W/(m·K)|||1.92||K/W|
|Temperature under<br>switching conditions|_T_vj op|||-40||150|°C|



## **6 NTC-Thermistor** 

|**6**<br>**NTC-Thermistor**|**6**<br>**NTC-Thermistor**|**6**<br>**NTC-Thermistor**|||||
|---|---|---|---|---|---|---|
|**Table 11**<br>**Characteristic values**|||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ|
|Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%|
|Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW|
|B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K|
|B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K|
|B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K|



_**Note** : For an analytical description of the NTC characteristics please refer to AN2009-10, chapter 4._ 

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**7  Characteristics diagrams** 

**7 Characteristics diagrams** 

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## **Output characteristic (typical), IGBT, Inverter** 

IC = f(VCE) 

## VGE = 15 V 

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**Transfer characteristic (typical), IGBT, Inverter** IC = f(VGE) VCE = 20 V 

**Output characteristic field (typical), IGBT, Inverter** IC = f(VCE) 

## T = 150 °C vj 

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40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br>


**Gate charge characteristic (typical), IGBT, Inverter** VGE = f(QG) IC = 20 A, Tvj = 25 °C 

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40 15<br>12<br>35<br>9<br>30<br>6<br>25<br>3<br>20 0<br>-3<br>15<br>-6<br>10<br>-9<br>5<br>-12<br>0 -15<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16<br>**----- End of picture text -----**<br>


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## **7  Characteristics diagrams** 

## **Capacity characteristic (typical), IGBT, Inverter** 

C = f(VCE) 

f = 100 kHz, VGE = 0 V, Tvj = 25 °C 

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10<br>1<br>0.1<br>0.01<br>0.001<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br>


## **Switching times (typical), IGBT, Inverter** 

## t = f(RG) 

IC = 20 A, VCC = 300 V, VGE = -15 / 15 V, Tvj = 150 °C 

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## **Switching times (typical), IGBT, Inverter** 

## t = f(IC) 

RGoff = 7.5 Ω, RGon = 7.5 Ω, VCC = 300 V, VGE = -15 / 15 V, Tvj = 150 °C 

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## **Switching losses (typical), IGBT, Inverter** 

E = f(IC) 

RGoff = 7.5 Ω, RGon = 7.5 Ω, VCC = 300 V, VGE = -15 / 15 V 

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## **Switching losses (typical), IGBT, Inverter** 

E = f(RG) 

IC = 20 A, VCC = 300 V, VGE = -15 / 15 V 

## **Reverse bias safe operating area (RBSOA), IGBT, Inverter** 

IC = f(VCE) 

RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 150 °C 

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**----- Start of picture text -----**<br>
0.8 100<br>0.7<br>80<br>0.6<br>0.5<br>60<br>0.4<br>40<br>0.3<br>0.2<br>20<br>0.1<br>0.0 0<br>0 10 20 30 40 50 60 70 80 0 100 200 300 400 500 600 700<br>Transient thermal impedance, IGBT, Inverter Forward characteristic (typical), Diode, Inverter<br>Zth = f(t) IF = f(VF)<br>10 40<br>35<br>30<br>25<br>1 20<br>15<br>10<br>5<br>0.1 0<br>0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br>


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## **7  Characteristics diagrams** 

## **Switching losses (typical), Diode, Inverter** 

Erec = f(IF) RGon = 7.5 Ω, VCE = 300 V 

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**Transient thermal impedance, Diode, Inverter** Zth = f(t) 

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Switching losses (typical), Diode, Inverter<br>**----- End of picture text -----**<br>


Erec = f(RG) VCE = 300 V, IF = 20 A 

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0.35<br>0.30<br>0.25<br>0.20<br>0.15<br>0.10<br>0.05<br>0.00<br>0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br>


**Output characteristic (typical), IGBT, 3-Level** IC = f(VCE) VGE = 15 V 

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## **Output characteristic field (typical), IGBT, 3-Level** 

IC = f(VCE) T = 150 °C vj 

## **Transfer characteristic (typical), IGBT, 3-Level** 

IC = f(VGE) VCE = 20 V 

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**----- Start of picture text -----**<br>
40 40<br>35 35<br>30 30<br>25 25<br>20 20<br>15 15<br>10 10<br>5 5<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>Gate charge characteristic (typical), IGBT, 3-Level Capacity characteristic (typical), IGBT, 3-Level<br>VGE = f(QG) C = f(VCE)<br>IC = 20 A, Tvj = 25 °C f = 100 kHz, VGE = 0 V, Tvj = 25 °C<br>15 10<br>12<br>9<br>1<br>6<br>3<br>0 0.1<br>-3<br>-6<br>0.01<br>-9<br>-12<br>-15 0.001<br>0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br>


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## **7  Characteristics diagrams** 

## **Switching times (typical), IGBT, 3-Level** 

## t = f(IC) 

RGoff = 3.9 Ω, RGon = 3.9 Ω, VCC = 300 V, VGE = -15 / 15 V, Tvj = 150 °C 

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## **Switching losses (typical), IGBT, 3-Level** 

## E = f(IC) 

RGoff = 3.9 Ω, RGon = 3.9 Ω, VCC = 300 V, VGE = -15 / 15 V 

## **Switching times (typical), IGBT, 3-Level** 

## t = f(RG) 

IC = 20 A, VCC = 300 V, VGE = -15 / 15 V, Tvj = 150 °C 

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**Switching losses (typical), IGBT, 3-Level** E = f(RG) 

IC = 20 A, VCC = 300 V, VGE = -15 / 15 V 

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0.4 0.30<br>0.25<br>0.3<br>0.20<br>0.2 0.15<br>0.10<br>0.1<br>0.05<br>0.0 0.00<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br>


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## **7  Characteristics diagrams** 

## **Reverse bias safe operating area (RBSOA), IGBT, 3- Level** 

## **Transient thermal impedance, IGBT, 3-Level** 

Zth = f(t) 

IC = f(VCE) 

RGoff = 3.9 Ω, VGE = ±15 V, Tvj = 150 °C 

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**Forward characteristic (typical), Diode, 3-Level** IF = f(VF) 

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**Switching losses (typical), Diode, 3-Level** Erec = f(IF) 

RGon = 3.9 Ω, VCE = 300 V 

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## **7  Characteristics diagrams** 

**Switching losses (typical), Diode, 3-Level Transient thermal impedance, Diode, 3-Level** Erec = f(RG) Zth = f(t) VCE = 300 V, IF = 20 A 

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## **Temperature characteristic (typical), NTC-Thermistor** R = f(TNTC) 

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8 Circuit diagram<br>**----- End of picture text -----**<br>


**Figure 1** 

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## **9  Package outlines** 

**9 Package outlines** 

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**----- Start of picture text -----**<br>
FS3L40R07W2H5F_B70IGBT TM<br>**----- End of picture text -----**<br>


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**Figure 2** 

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## **10  Module label code** 

## **10 Module label code** 

|**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**|
|---|---|---|---|---|
|Code format|Data Matrix||Barcode Code128||
|Encoding|ASCII text||Code Set A||
|Symbol size|16x16||23 digits||
|Standard|IEC24720 and IEC16022||IEC8859-1||
||||||
|Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30|
|Example|71549142846550549911530<br>71549142846550549911530||||



## **Figure 3** 

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**FS3L40R07W2H5F_B70 EasyPACK[™] 2B module** 

**Revision history** 

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## **Revision history** 

|**Revision history**|||
|---|---|---|
|**Document revision**|**Date of release**|**Description of changes**|
|0.10|2023-10-04|Initial version|
|1.00|2024-04-09|Final datasheet|



Datasheet 

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20 

## **Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

**Edition 2024-04-09 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** 

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**Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABH459-002** Infineon Technologies in customer’s applications. 

## **Warnings** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

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