# IGBT Module, Six Pack [Full Bridge], 65 A, 1.85 V, 225 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726186/)

**URL**: https://novapart.co/products/FS35R12W1T4BOMA1/igbt-module-six-pack-full-bridge-65-a-185-v-225-w
**SKU**: FS35R12W1T4BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €16.9000
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:65A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:225W; Collector Emitter Voltage V(br)ceo:1.2kV; Trans

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPACK |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 225W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 65A |
| Power Dissipation Pd | 225W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 65A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726186/)

IGBT-Module IGBT-modules 

## FS35R12W1T4 

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VCES = 1200V IC nom = 35A / ICRM = 70A 

- Klimaanlagen 

- • Motorantriebe • Servoumrichter 

- USV-Systeme 

   - 

   - 

   - 

   - 

- 

- 

- VCEsat 

- CEsat 

   - 

   - 

   - VCEsat with 

   - • Low V CEsat 

- Al2O3 Substrat mit kleinem thermischen Widerstand 

- 

- Lötverbindungstechnik 

- Robuste Montage durch integrierte Befestigungsklammern 

- Al2O3 

- 

- 

- Rugged mounting due to integrated mounting clamps 

1 

> IGBT-ModuleIGBT-modules FS35R12W1T4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS35R12W1T4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-16<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>35<br>65<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>70<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>225<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 35 A, VGE= 15 V<br>IC= 35 A, VGE= 15 V<br>IC= 35 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,27<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,00<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,07<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 12Ω<br>td on<br>0,025<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 12Ω<br>tr<br>0,028<br>0,031<br>0,032<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 12Ω<br>td off<br>0,24<br>0,30<br>0,315<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 12Ω<br>tf<br>0,115<br>0,185<br>0,205<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 35 A, VCE= 600 V, LS= 60 nH<br>VGE= ±15 V, di/dt = 1850 A/µs (Tvj= 150°C)<br>RGon= 12Ω<br>Eon<br>2,55<br>3,60<br>3,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 35 A, VCE= 600 V, LS= 60 nH<br>VGE= ±15 V, du/dt = 3500 V/µs (Tvj= 150°C)<br>RGoff= 12Ω<br>Eoff<br>2,05<br>3,05<br>3,35<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>130<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,60<br>0,66<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,75<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FS35R12W1T4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|35|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|70|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|250<br>220<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 35 A, - diF/dt = 1850 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||60,0<br>66,0<br>70,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 35 A, - diF/dt = 1850 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,50<br>5,60<br>6,40||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 35 A, - diF/dt = 1850 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,35<br>2,30<br>2,60||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,80|0,90|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,82||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�DK date�of�publication:�2013-10-16 approved�by:�MB revision:�2.1 

3 

## Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules FS35R12W1T4 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||25||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||4,50||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Gewicht<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 30A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 30A rms per connector pin. 

date�of�publication:�2013-10-16 revision:�2.1 

prepared�by:�DK approved�by:�MB 

4 

IGBT-Module IGBT-modules 

## FS35R12W1T4 

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**----- Start of picture text -----**<br>
I output C  characteristic CE) IGBT,Inverter (typical) I output C characteristic CE) IGBT,Inverter (typical)<br>VGE “as Tvj =150°C<br>70 70<br>Tvj = 25°C / VGE = 19V<br>63 F Tvj = 125°C s 63 VGE = 17V<br>Tvj = 150°C ee e VGE = 15V e<br>VGE = 13V<br>56 56 VGE = 11V<br>e e e ee | Le<br>VGE = 9V<br>e e ee<br>49 49<br>42 pp e e 42 e<br>35 35<br>PTT Tye OL ev<br>28 28<br>ee ee ee eeoe<br>21 | ve |tL 21 7 ae|<br>ee ee<br>14 14<br>7 7<br>pTCATT)AP | | eoCA<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>I transfer C GE  characteristic ) IGBT,Inverter(typical) E switching on C losses off IGBT, C)  Inverter (typical)<br>VCE oo VGE ~HeVR Gon L412 Ω ,R Goff =12 Ω ,V CE =600V<br>70 13<br>Tvj = 25°C Eon, Tvj = 125°C<br>63 Tvj = 125°C 12 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>rr i 11 Eoff, Tvj = 150°C<br>ee<br>56<br>10<br>SO O) PR R<br>49 | i! 9 Pt tT | |<br>ee 8<br>42<br>ee ee e e<br>7<br>ee eye<br>35<br>6<br>Se) 2a<br>28<br>5<br>21 PTT 4 po<br>| YI | Ey EP tee<br>3<br>14 PCE) Peer<br>2<br>SGP 40008 0<br>7<br>1<br>A pa | | |<br>poe]<br>0 0<br>| | | | Pe<br>5 6 7 8 9 10 11 12 13 0 7 14 21 28 35 42 49 56 63 70<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-Module IGBT-modules 

## FS35R12W1T4 

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Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =35A,V CE =600V<br>16 a 10 rr<br>| eee<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eoff, Tvj = 125°C<br>14 F Eon, Tvj = 150°C V y) pL; H—a S Oa E ee|<br>Eoff, Tvj = 150°C<br>ee 7) a ee |<br>12 E J E} | Ler | CI cr<br>| tt oe 4 a |<br>108 aL lA ceUee 1 e I eAc e<br>A rT TATTLE | TTTIM<br>e t<br>64 YT’YLI EL YL EL) PT | ne TT oT TMTa TTT<br>vA PA A<br>2 epeeset | CUDA TI i:   ri[K/W]:   1   0,065    TTT 2   0,152   3   0,529    CH 4   0,604<br>Al τ i[s]:    0,0005   0,005   0,05    0,2<br>0 0,1<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE Aen V,R Goff =12 Ω ,T vj =150°C<br>80 70<br>IC, Modul Tvj = 25°C<br>IC, Chip 63 Tvj = 125°C<br>70 Tvj = 150°C<br>a ee ee<br>56<br>| | ey — :<br>60<br>Pt a ee<br>49<br>50<br>42<br>40 35<br>30 Pfpf)Gf 28 Pg<br>21 es<br>20<br>14<br>10 Pt ara<br>PEP 7<br>0 0<br>0 200 400 600 800 1000 1200 ) 1400 0,0 Geac 0,4 0,8 1,2 1,6 2,0 2,4 2,8<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FS35R12W1T4 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon ap Ω »,V CE =600V IF =36nV CE = 600 V<br>5,0 3,5<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>4,5 FEL Erec, Tvj = 150°C ol} JRF Erec, Tvj = 150°C<br>3,0<br>4,0<br>2,5<br>3,5<br>3,0<br>PTT TTT Ter 2,0 ERLE EEEEE<br>2,5<br>SERED eZee TNT TTT<br>1,5<br>2,0<br>1,5 felt | | TP SSeS<br>Lede td 1,0 USSR.SS<br>1,0<br>0,5<br>0,5<br>0,0 0,0<br>0 7 14 21 28 35 42 49 56 63 70 0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJH =f (t) R=f(T)<br>10 ee 100000 ee |<br>ZthJH : Diode Rtyp<br>H— SF _————<br>T r o La e e<br>a DO<br>l l es ee<br>a | ee | ry.<br>10000<br>a ee | Ne ee<br>ES Ns es ss<br>Lat in ee ———————<br>1 Eea 2 re Ne ee eee<br>|PCI| 1000 aN————_————NX eee<br>PAE ETE TIE ET a ee<br>ZL) i:    1    2    3    4<br>ri[K/W]:   0,108    0,247   0,665   0,599<br>CA τ i[s]:    e 0,0005   0,005    o 0,05    0,2    a<br>0,1 TCO o41 100 PP EE |<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


7 

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Technische�Information�/�Technical�Information<br>IGBT-ModuleIGBT-modules FS35R12W1T4<br>**----- End of picture text -----**<br>


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Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�DK date�of�publication:�2013-10-16 approved�by:�MB revision:�2.1 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS35R12W1T4 

## **Nutzungsbedingungen** 

## application. 

9 



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- [Supplier page](https://es.farnell.com/infineon/fs35r12w1t4boma1/transistor-igbt-module-1-2kv-65a/dp/2726186)
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