# IGBT Module, Six Pack [Full Bridge], 45 A, 1.55 V, 150 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726185/)

**URL**: https://novapart.co/products/FS30R06W1E3BOMA1/igbt-module-six-pack-full-bridge-45-a-155-v-150-w
**SKU**: FS30R06W1E3BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €24.8600
**Stock**: 10+

## Description

Transistor Polarity:N Channel; DC Collector Current:45A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:150W; Collector Emitter Voltage V(br)ceo:600V; Transis

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (08-Jul-2021) |
| Product Range | EasyPACK |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 150W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 45A |
| Power Dissipation Pd | 150W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 45A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Saturation Voltage Vce(On) | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726185/)

IGBT-Module IGBT-modules 

## FS30R06W1E3 

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VCES = 600V IC nom = 30A / ICRM = 60A 

- Klimaanlagen 

- • Motorantriebe • Servoumrichter 

- USV-Systeme 

   - 

   - 

   - 

   - 

- 

- 

- VCEsat mit 

- • Niedriges V CEsat 

   - 

   - 

   - VCEsat with 

   - • Low V CEsat 

- Al2O3 Substrat mit kleinem thermischen Widerstand 

- 

- Lötverbindungstechnik 

- Robuste Montage durch integrierte Befestigungsklammern 

- Al2O3 

- 

- 

- Rugged mounting due to integrated mounting clamps 

1 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS30R06W1E3 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS30R06W1E3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>45<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>150<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,023<br>0,023<br>0,023<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,023<br>0,028<br>0,029<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,15<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,12<br>0,165<br>0,175<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 50 nH<br>VGE= ±15 V, di/dt = 1000 A/µs (Tvj= 150°C)<br>RGon= 15Ω<br>Eon<br>0,60<br>0,75<br>0,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 50 nH<br>VGE= ±15 V, du/dt = 4200 V/µs (Tvj= 150°C)<br>RGoff= 15Ω<br>Eoff<br>0,62<br>0,83<br>0,87<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,90<br>1,00<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,85<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FS30R06W1E3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>82,0<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||20,0<br>24,0<br>26,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,20<br>2,00<br>2,30||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,17<br>0,35<br>0,41||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,15|1,25|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,90||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.1 

3 

## Technische�Information�/�Technical�Information 

## IGBT-ModuleIGBT-modules FS30R06W1E3 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||25||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||4,50||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|Gewicht<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 30 A effektiv pro Anschlusspin begrenzt The current under continuous operation is limited to 30 A rms per connector pin 

date�of�publication:�2013-10-03 revision:�2.1 

prepared�by:�DK approved�by:�MB 

4 

## IGBT-Module IGBT-modules Technische Information FS30R06W1E3 / Technical Information 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>60 60<br>Tvj = 25°C VGE = 19 V<br>54 Tvj = 125°C 54 VGE = 17 V<br>i Tvj = 150°C 7 VGE = 15 V Lie<br>VGE = 13 V<br>48 eee 48 | VGE = 11 V AT<br>’ VGE = 9 V i; 4<br>pp e e Ft e e| |<br>42 42<br>pi A<br>36 36<br>SERRE Ane)‘ /eee<br>30 30<br>24 SERRAif 24 eeA‘ / e<br>‘<br>18 18 —<br>eee) eee eee A e<br>See[i<br>12 12<br>see eee eee) [ee] [e]<br>SEE Ae<br>6 6<br>0 0<br>piee ZA TTT TT | OLYVY<br>0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =15 Ω ,R Goff =15 Ω ,V CE =300V<br>60 2,4<br>Tvj = 25°C Eon, Tvj = 125°C<br>54 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>2,0 Eoff, Tvj = 150°C<br>FELee | te rr<br>48<br>42<br>e e ee e<br>1,6<br>36 [\F 2<br>pf /<br>eee ae <aao<br>30 1,2 727<br>24<br>ef | | |] | LAr<br>0,8<br>18<br>12<br>0,4<br>e/a aad<br>6<br>0 ee ee 0,0<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

## IGBT-Module IGBT-modules 

## FS30R06W1E3 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH = f (t)<br>VGE =+15V,1 C =30A,V CE =300V<br>4,0 10<br>Eon, Tvj = 125°C ZthJH : IGBT<br>3,6 | E | off, Tvj = 125°C Ti | beeZL  | eeEd Titi TT<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>3,2 a t ixYA | |a<br>PF] f | tf ww} fd a a e ee ll<br>2,8<br>4 LUI<br>2,4 PEL EEE CTI ULI<br>2,0 1<br>P| fA Twft J ft | TINTPt CeTMFER TT<br>1,61,2 | | JA |) fF _|ua=| de | aa|eh |<br>| YY fj iceaea ] | Zl a | |<br>0,8<br>i:    1    2    3    4<br>0,4 I — PATTI) { )  CLUES r τ ii[K/W]:   [s]:    0,142   0,0005   0,309   0,005   0,719   0,05    TC 0,58   0,2    H<br>PP T eor<br>0,0 0,1<br>0 20 40 60 80 100 120 140 160 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ee V,R Goff =15 Ω ,T vj =150°C<br>66 60<br>IC, Modul Tvj = 25°C<br>60 I C , Chip 54 Tvj = 125°C<br>[ay a F Tvj = 150°C L ye<br>54 poo eg<br>a 48<br>48<br>ee 42<br>42<br>ee 36 eeeie<br>36<br>30<br>30<br>24<br>24<br>18<br>18<br>12<br>12<br>ee ee i ey<br>6 ee ee eee ee 6 Ae,<br>0 ee e e 0 Eee Zane<br>0 200 400 600 800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FS30R06W1E3 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon 5 Ω ,V CE =300V IF =30 8V CE = 300 V<br>0,8 0,6<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>aa<br>0,7<br>0,5<br>0,6<br>0,4<br>0,5<br>ree fae<br>0,4 0,3<br>eT ‘<br>0,3 a ~<br>pee 0,2 PINN<br>0,2<br>Pat | | CTT PRRED~<br>0,1<br>0,1<br>0,0 0,0<br>0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 160<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJIH =f (t) R=f(T)<br>10 ee ee 100000 ee |<br>ZthJH: Diode Rtyp<br>ooo ey _————SS<br>a DO<br>TE EE ET es ee<br>PA IE ETT) ry.<br>a a 10000 Ne ee<br>1<br>SSS<br>2YT MTT aN\ eee<br>ACL EET ET 1000 ————_————<br>VIE ETE EE ET) eeae rs<br>i:    1    2    3    4<br>ri[K/W]:   0,258    0,441   0,796   0,554<br>CO τ i[s]:    0,0005   0,005   0,05    0,2    a<br>0,1 TCO o41 100 PP EE |<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


7 

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**----- Start of picture text -----**<br>
Technische�Information�/�Technical�Information<br>IGBT-ModuleIGBT-modules FS30R06W1E3<br>Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.1 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS30R06W1E3 

## **Nutzungsbedingungen** 

application. 

9 



## Links

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- [Supplier page](https://es.farnell.com/infineon/fs30r06w1e3boma1/transistor-igbt-module-600v-45a/dp/2726185)
---

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