# IGBT Module, Six Pack [Full Bridge], 300 A, 1.75 V, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2781259/)

**URL**: https://novapart.co/products/FS300R12OE4PNOSA1/igbt-module-six-pack-full-bridge-300-a-175-v-150-c
**SKU**: FS300R12OE4PNOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €383.7100
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:300A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| Product Range | EconoPACK+ |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Solder |
| Power Dissipation | - |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 300A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 300A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781259/)

## IGBT-Modul IGBT-Module 

## FS300R12OE4P 

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VCES = 1200V<br>IC nom = 300A / ICRM = 600A<br>**----- End of picture text -----**<br>


- Hochleistungsumrichter • 

- • Hybrid-Nutzfahrzeuge • • Motorantriebe • • Solar Anwendungen • • USV-Systeme • Elektrische Eigenschaften • Hohe Kurzschlussrobustheit • • Sehr grof&e Robustheit • • Trench IGBT 4 • • T yjop = 150°C • T • Hohe Stofstromfestigkeit • Mechanische Eigenschaften • Hohe mechanische Robustheit • • Integrierter NTC Temperatur Sensor • • PressFIT Verbindungstechnik • • RoHS konform • • Thermisches Interface Material bereits • aufgetragen 

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Digit<br>**----- End of picture text -----**<br>


1 

## Technische�Information�/�Technical�Information 

> IGBT-ModulIGBT-Module FS300R12OE4P 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

|TechnischeInformation/TechnicalInformation<br>FS300R12OE4P<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:ZV<br>approvedby:KV<br>dateofpublication:2016-07-29<br>revision:V2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TH= 70°C, Tvj max= 175°C<br>IC nom<br>300<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 11,5 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,20<br>5,80<br>6,40<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,25<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,05<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,75Ω<br>td on<br>0,19<br>0,21<br>0,22<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,75Ω<br>tr<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,75Ω<br>td off<br>0,40<br>0,51<br>0,54<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,75Ω<br>tf<br>0,06<br>0,10<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 5200 A/µs (Tvj= 150°C)<br>RGon= 0,75Ω<br>Eon<br>19,0<br>29,5<br>32,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3100 V/µs (Tvj= 150°C)<br>RGoff= 0,75Ω<br>Eoff<br>24,5<br>38,0<br>42,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1200<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink<br>proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial<br>RthJH<br>0,134 K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



|preparedby:ZV|dateofpublication:2016-07-29|
|---|---|
|approvedby:KV|revision:V2.0|



2 

## Technische�Information�/�Technical�Information 

> IGBT-ModulIGBT-Module FS300R12OE4P 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|300|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|17500<br>14500<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||290<br>330<br>330||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 300 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||28,5<br>52,5<br>62,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||12,5<br>22,5<br>25,5||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,190|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�ZV date�of�publication:�2016-07-29 approved�by:�KV revision:�V2.0 

3 

## Technische�Information�/�Technical�Information 

> IGBT-ModulIGBT-Module FS300R12OE4P 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|2,5<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||18,5<br>12,6<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||16,0<br>10,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||1,10||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||924||g|



Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 

prepared�by:�ZV approved�by:�KV 

date�of�publication:�2016-07-29 revision:�V2.0 

4 

## Technische�Information�/�Technical�Information 

> IGBT-ModulIGBT-Module FS300R12OE4P 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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**----- Start of picture text -----**<br>
600 600<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>500 500 VVGEGE = 13V = 11V<br>VGE = 9V<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) Schaltverluste�IGBT,Wechselrichter�(typisch)<br>transfer�characteristic�IGBT,Inverter�(typical) switching�losses�IGBT,Inverter�(typical)<br>IC�=�f�(VGE) Eon�=�f�(IC),�Eoff�=�f�(IC)<br>VCE�=�20�V VGE�=�±15�V,�RGon�=�0.75� Ω ,�RGoff�=�0.75� Ω ,�VCE�=�600�V<br>600 100<br>TTTvjvjvj = 25°C = 125°C = 150°C 90 EEEononoff, T,, T Tvjvvjj = 125°C = 1 = 125°C50°C<br>500 Eoff, Tvj = 150°C<br>80<br>70<br>400<br>60<br>300 50<br>40<br>200<br>30<br>20<br>100<br>10<br>0 0<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br>prepared�by:�ZV date�of�publication:�2016-07-29<br>approved�by:�KV revision:�V2.0<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-Modul IGBT-Module 

## FS300R12OE4P 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =300A,V CE =600V<br>100 rs | 1 a<br>90 EEEononoff, T,, T Tvjvvjj = 125°C = 1 = 125°C50°C (en| ZthJH : IGBT  RAREa<br>Eoff, Tvj = 150°C<br>80<br>4 eth eee eent et<br>7<br>70<br>UZ 0,1 Leet<br>60<br>wae Se<br>50<br>a sai diiiesitiientii<br>: CH HA<br>40<br>0,01<br>30<br>20<br>i: 1 2 3 4<br>ri[K/W]: 0,0072 0,0482 0,0498 0,0288<br>10 τ i[s]: 0,000655 0,0314 0,178 1,11<br>0 0,001<br>0 1 2 3 4 5 6 7 8 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =0.75 Ω ,T vj =150°C<br>700 600<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>Tvj = 150°C<br>600<br>500<br>500<br>400<br>400<br>300<br>300<br>200<br>200<br>VA<br>77<br>100<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Modul IGBT-Module 

## FS300R12OE4P 

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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =0.75 Ω ,V CE =600V IF =300A,V CE =600V<br>35 30<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>30<br>25<br>ess N<br>“XN<br>L-o- [-]<br>25<br>Yo 20<br>20 7 < P| ~~~ ~<br>7 ~~ ~~ >>!<br>15<br>15<br>10<br>10 fo<br>5<br>5<br>0 0<br>0 100 200 300 400 500 600 0 1 2 3 4 5 6 7 8<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ZthJH =f (t) R=f(T)<br>1 100000<br>Z thJH  : Diode Rtyp<br>10000<br>a<br>0,1 Seema meetin ‘<br>1000<br>L SSS ——E——<br>i: 1 2 3 4<br>ri[K/W]: 0,0106 0,0607 0,0774 0,0413<br>τ i[s]: 0,000592 0,025 0,119 0,881<br>0,01 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


7 

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**----- Start of picture text -----**<br>
Technische�Information�/�Technical�Information<br>IGBT-ModulIGBT-Module FS300R12OE4P<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�Circuit�diagram<br>J<br>**----- End of picture text -----**<br>


## **Gehäuseabmessungen�/�Package�outlines** 

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prepared�by:�ZV date�of�publication:�2016-07-29 approved�by:�KV revision:�V2.0 

8 

## IGBT-Modul IGBT-Module 

## FS300R12OE4P 

## **Nutzungsbedingungen** 

## **WARNHINWEIS** 

## **WARNINGS** 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/FS300R12OE4PNOSA1/igbt-module-six-pack-full-bridge-300-a-175-v-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fs300r12oe4pnosa1/igbt-module-n-ch-1-2kv-300a/dp/2781259)
---

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