# IGBT Module, Six Pack [Full Bridge], 460 A, 1.75 V, 1.65 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3703570/)

**URL**: https://novapart.co/products/FS300R12OE4BOSA1/igbt-module-six-pack-full-bridge-460-a-175-v-165
**SKU**: FS300R12OE4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €384.3400
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 1.65kW |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 460A |
| Power Dissipation Pd | 1.65kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 460A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3703570/)

IGBT-模块 IGBT-modules 

## FS300R12OE4 

> EconoPACK™+ #83 58 FA 5s 2 074) Fa tit 带有pressfit压接管脚和温度检测NTC 

VCES = 1200V IC nom = 300A / ICRM = 600A 

## **典型应用** 

- 电梯 

- 大功率变流器 

- 商业性农用车辆 

- • 电机传动 • 太阳能应用 

- UPS系统 

- Elevators 

- 

- 

- 

- 

- 

## **电气特性** 

- 高短路能力，自限制短路电流 

• High Short Circuit Capability, Self Limiting Short 

- 无与伦比的坚固性 

- 沟槽栅IGBT4 

- T 

- 高冲击电流能力 

- 

• 

- T 

- 

## **机械特性** 

- 高机械坚固性 

- 集成NTC温度传感器 

- 绝缘的基板 

   - 

   - 

   - 

- • 

- 符合RoHS 

- 

1 

> IGBT-模块IGBT-modules FS300R12OE4 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FS300R12OE4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:CU<br>approvedby:WR<br>dateofpublication:2013-11-05<br>revision:3.1<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>300<br>460<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1650<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 11,5 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,25<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,5<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,05<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>3,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,75Ω<br>td on<br>0,19<br>0,21<br>0,22<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,75Ω<br>tr<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,75Ω<br>td off<br>0,40<br>0,51<br>0,54<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 300 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,75Ω<br>tf<br>0,06<br>0,10<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 5200 A/µs (Tvj= 150°C)<br>RGon= 0,75Ω<br>Eon<br>19,0<br>29,5<br>32,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3100 V/µs (Tvj= 150°C)<br>RGoff= 0,75Ω<br>Eoff<br>24,5<br>38,0<br>42,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1200<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,091 K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,045<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FS300R12OE4 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|300|A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|17500<br>14500<br>|A²s<br>A²s|



## **特征值�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,10|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||290<br>330<br>330||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 300 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||28,5<br>52,5<br>62,5||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||12,5<br>22,5<br>25,5||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,14|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,048||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�CU date�of�publication:�2013-11-05 approved�by:�WR revision:�3.1 

3 

IGBT-模块 IGBT-modules 

## FS300R12OE4 

|#R_<br>| Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>内部绝缘<br>~~Isolation test voltage~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~||2,5<br>Al2O3||kV|
|爬电距离<br>Creepage distance|im-BEXH /terminal toheatsink<br>iimF-Um /terminal to terminal|||18,5<br>12,6||mm|
|电气间隙<br>Clearance|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal|||16,0<br>10,0||mm|
|相对电痕指数<br>~~Comperative tracking index~~|~~ee ~~|CTI<br> ~~ee~~|min.|> 200<br>typ.|max.||
|杂散电感,模块||LsCE||20||nH|
|模块引线电阻,端子-芯片|TC<br>-<br>°<br>ON<br>‘|RCC'+EE'||1,10||mΩ|
|储存温度<br>模块安装的安装扭距<br>~~Storage temperature~~<br>Mounting torque for modul mounting|~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|端子联接扭距<br>Terminal connection torque|$eM6AHEAD VAY Oy A AET<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm|
|重量<br>Weight||G||924||g|



4 

## IGBT-模块 IGBT-modules 

## FS300R12OE4 

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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>600 a | ) “ 600 es [|]<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>500 a ra 500 | VGE = 13V 7<br>VGE = 11V<br>Je VGE = 9V : / /<br>400 400<br>fe if a<br>300 300<br>7, vA |<br>J<br>200 200<br>/<br>a<br>100 100<br>0 0<br>l ft ili } L AL<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =4+15V,R Gon =0.75 Ω ,R Goff =0.75 Ω ,V CE =600V<br>600 100<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C 90 Eon, Tvj = 150°C<br>Tvj = 150°C Eoff, Tvj = 125°C<br>500 Eoff, Tvj = 150°C<br>80<br>70<br>400<br>60<br>/ ee ey oe<br>te<br>300 50<br>40<br>ra<br>y a7 a<br>200<br>30<br>Le<br>Ly ||<br>20<br>100 Af | ey TL<br>10<br>tA7 DetT} 4eeee<br>0 0<br>ty |<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

## IGBT-模块 IGBT-modules 

## FS300R12OE4 

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**----- Start of picture text -----**<br>
switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =300A,V CE =600V<br>100 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>HH— EE HH} tH<br>90 Eon, Tvj = 150°C ooo TTT<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>8070 ee Py.) | | Cee eea Pee |n|<br>sare 0,1 MULTI ET L<br>60 eee aaa— aoa0 n<br>50<br>40 | | fe ta Z|| ft | a aa | |<br>30 i4 va 0,01 MMTIFE ll<br>20 Po f | fof fd | e eeeea eee|<br>i:    1    2    3    4<br>10 PP) e r τ ii[K/W]:   [s]:    0,0057   0,0004    t 0,0072   0,0069   0,0653   0,0388   0,013   0,8257<br>PEE EL)aa | ol l<br>0 0,001<br>0 1 2 3 4 5 6 7 8 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Rie LER IGBT, #28 ( RBSOA ) TEMfe tStE —iR BEaES ( BAB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE rs V,R Goff =0.75 Ω ,T vj =150°C<br>700 600<br>IC, Modul Tvj = 25°C<br>IC Ld , Chip a Tvj = 125°C / "<br>600 Tvj = 150°C<br>500<br>500<br>400<br>400<br>300<br>300<br>200<br>200<br>100<br>100 PPT) Lee TE<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FS300R12OE4 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon $75 Ω ,V CE =600V IF = 300 A, V CE = 600 V<br>35 30<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>30 ee<br>25<br>25<br>20<br>20<br>7 |Peete<br>15<br>15<br>7 fT —<br>10<br>10 ae ee<br>5<br>5<br>0 0<br>0 100 200 300 400 500 600 0 1 2 3 4 5 6 7 8<br>IF [A] RG [ Ω ]<br>transientRASTAthermal— iS, impedancees Diode, Inverter RBEABARNTC-Thermistor-temperatureBH BER characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>ZthJC : Diode Rtyp<br>{— et [I ———<br>Re pe<br>PT a  TT TTT llTTT aa e eeeeeee ee<br>|Err| ll a a eeee ee<br>0,1 10000<br>a ee ames NTCa mae eleG<br>ES es<br>YT TTT TT ES NN se ee<br>aa a eel a Ne a eeee<br>2 PN<br>ea eal 2 ee eee<br>0,01 a 1000 Ne<br>PE tH a<br>Pt a<br>PT |  TT TTT TTT a eeee ee<br>i:    1    2    3    4<br>ri[K/W]:   0,0114   0,0188   0,0936   0,0171    a<br>a τ i[s]:    0,0004   0,0079   0,039    0,8355    [I] a<br>0,001 ME Amo i «Sst 100 |<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FS300R12OE4 

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8 

IGBT-模块 IGBT-modules 

## FS300R12OE4 

## **使用条件和条款** 

使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 

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9 



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> distributors in Europe and Asia. Unlike standard online stores, Novapart
> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.
