# IGBT Module, Six Pack [Full Bridge], 20 A, 1.55 V, 135 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:4127004/)

**URL**: https://novapart.co/products/FS20R06W1E3BOMA1/igbt-module-six-pack-full-bridge-20-a-155-v-135-w
**SKU**: FS20R06W1E3BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €12.9500
**Stock**: 25+
**Lead Time**: 99 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPACK Series |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Solder |
| Power Dissipation | 135W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Module |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4127004/)

IGBT-Module IGBT-modules 

## FS20R06W1E3 

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VCES = 600V IC nom = 20A / ICRM = 40A 

- Klimaanlagen 

- • Motorantriebe • Servoumrichter 

- USV-Systeme 

   - 

   - 

   - 

   - 

- 

- 

- VCEsat mit 

- • Niedriges V CEsat 

   - 

   - 

   - VCEsat 

   - CEsat 

- Al2O3 Substrat mit kleinem thermischen Widerstand 

- 

- Lötverbindungstechnik 

- Robuste Montage durch integrierte Befestigungsklammern 

- Al2O3 

- 

- 

- Rugged mounting due to integrated mounting clamps 

1 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS20R06W1E3 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS20R06W1E3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>20<br>35<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>40<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>135<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 20 A, VGE= 15 V<br>IC= 20 A, VGE= 15 V<br>IC= 20 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,10<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,034<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 20 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 18Ω<br>td on<br>0,023<br>0,023<br>0,023<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 20 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 18Ω<br>tr<br>0,029<br>0,033<br>0,034<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 20 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 18Ω<br>td off<br>0,14<br>0,16<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 20 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 18Ω<br>tf<br>0,10<br>0,14<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 20 A, VCE= 300 V, LS= 50 nH<br>VGE= ±15 V, di/dt = 900 A/µs (Tvj= 150°C)<br>RGon= 18Ω<br>Eon<br>0,38<br>0,48<br>0,52<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 20 A, VCE= 300 V, LS= 50 nH<br>VGE= ±15 V, du/dt = 4200 V/µs (Tvj= 150°C)<br>RGoff= 18Ω<br>Eoff<br>0,44<br>0,57<br>0,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>140<br>100<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,00<br>1,10<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,90<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FS20R06W1E3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|20|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|40|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|49,0<br>45,0<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 20 A, VGE= 0 V<br>IF= 20 A, VGE= 0 V<br>IF= 20 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 20 A, - diF/dt = 900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||30,0<br>35,0<br>37,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 20 A, - diF/dt = 900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,25<br>2,30<br>2,70||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 20 A, - diF/dt = 900 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,21<br>0,42<br>0,52||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,40|1,55|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,90||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.1 

3 

## Technische�Information�/�Technical�Information 

## IGBT-ModuleIGBT-modules FS20R06W1E3 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||25||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||4,50||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|Gewicht<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 30 A effektiv pro Anschlusspin begrenzt The current under continuous operation is limited to 30 A rms per connector pin 

date�of�publication:�2013-10-03 revision:�2.1 

prepared�by:�DK approved�by:�MB 

4 

IGBT-Module IGBT-modules 

## FS20R06W1E3 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>40 a 40 es<br>) ;<br>Tvj = 25°C VGE = 9 V<br>36 Tvj = 125°C 36 P VGE = 11 V owe<br>E Tvj = 150°C O VGE = 13 V |<br>VGE = 15 V<br>32 eee 32 | VGE = 17 V yt<br>VGE = 19 V<br>pp e e Fe e e|<br>28 28<br>24 24<br>pti Ar<br>SRREe ae) eee<br>20 20<br>ae il id‘<br>16 16<br>12 12<br>Sane) See eee 2<br>See<br>8 8<br>see eee eeeee e<br>4 4<br>p ty<br>0 0<br>tT tT tT} LA<br>0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =18 Ω ,R Goff =18 Ω ,V CE =300V<br>40 1,6<br>Tvj = 25°C Eon, Tvj = 125°C<br>36 Tvj = 125°C [F] Eoff, Tvj = 125°C [LL]<br>EF T [L] vj = 150°C [OE] 1,4 Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>32<br>Pe Eb<br>1,2<br>28<br>pf | | ve —— /|<br>1,0<br>24 | | 4 fe<br>pt mo L L<br>eee ae “<br>20 0,8<br>16 ee ee ee<br>0,6<br>12<br>pf | |g | oe<br>0,4<br>8<br>Heer Hee te<br>e/a 0,2 “O<br>4<br>ne ae<br>0 0,0<br>5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 35 40<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-Module IGBT-modules 

## FS20R06W1E3 

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**----- Start of picture text -----**<br>
Eon =f{(R)E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =20A,V CE =300V<br>2,2 10 PtTTT<br>Eon, Tvj = 125°C | ZthJH : IGBT PET TT<br>2,0 = Eoff, Tvj = 125°C r it ft ff slTTT<br>Eon, Tvj = 150°C<br>1,8 f = Eoff, Tvj = 150°C Popo Ao o o i<br>PT T. | A5 | a | | ||<br>1,6 IEA<br>1,4<br>Sanee7annn LATIN LTT<br>1,2<br>1<br>1,0 PfPy ftTey]fatLL TTff}| fd|| LALaPTeeeTEAT PLere TT TTTTTTAI<br>0,8<br>| | a| | danbagespe— | |26 |<br>0,6<br>EAE CALI TTA TTI TT<br>0,4<br>i:    1    2    3    4<br>ri[K/W]:   0,198    0,384   0,762   0,556<br>0,2 PEEEEEEEEE F A τ i[s]:    0,0005   0,005    R 0,05    0,2<br>Pte CLAN | hoo<br>0,0 0,1<br>0 20 40 60 80 100 120 140 160 180 200 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ee V,R Goff =18 Ω ,T vj =150°C<br>44 40<br>IC, Modul Tvj = 25°C<br>40 a I C , Chip 36 Tvj = 125°C<br>a ( Tvj = 150°C ea<br>36 eeEe<br>p o} 32<br>32<br>28<br>28<br>pot P g<br>24<br>24<br>20<br>20<br>16<br>16<br>12<br>12<br>8<br>8<br>4 ee ee ee 4 KS<br>a ee EERE ZAR<br>0 0<br>0 200 400 600 800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FS20R06W1E3 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon fs Ω »,V CE =300V IF my CE = 300 V<br>0,9 0,7<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>0,8 FE Erec, Tvj = 150°C J |} U E Erec, Tvj = 150°C<br>0,6<br>0,7<br>P T T B a t th<br>0,5<br>0,6<br>0,50,4 COOPeerca eanes =O 0,4 LETENG\ _ EEE<br>0,3<br>0,3<br>EEocanneee SCE<br>0,2<br>Pepema, SAEtL<br>0,2<br>0,1<br>ALLE -<br>0,1<br>0,0 0,0<br>0 4 8 12 16 20 24 28 32 36 40 0 20 40 60 80 100 120 140 160 180 200<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJH =f (t) R=f(T)<br>10 ee 100000 ee |<br>ZthJH : Diode Rtyp<br>H— SF _————<br>a<br>a<br>ll DO<br>a | ee | es ee<br>TH ek 10000 ET | ||<br>| ee<br>1<br>aPACTa | 1000 aN————_————NX eee<br>a a ll a ee<br>i:    1    2    3    4<br>ri[K/W]:   0,387    0,524   0,839   0,551<br>CO τ i[s]:    0,0005   0,005   0,05    0,2    PN<br>0,1 TCO or 100 Pt tT TE EE<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


7 

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Technische�Information�/�Technical�Information<br>IGBT-ModuleIGBT-modules FS20R06W1E3<br>Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.1 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS20R06W1E3 

## **Nutzungsbedingungen** 

application. 

9 



## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fs20r06w1e3boma1/igbt-module-1-55v-20a-135w-press/dp/4127004)
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