# IGBT Module, Six Pack, 200 A, 1.55 V, 20 mW, 175 °C, Module

![Product image](https://novapart.co/image/farnell:4292645/)

**URL**: https://novapart.co/products/FS200R12W3T7B11BPSA1/igbt-module-six-pack-200-a-155-v-20-mw-175-c
**SKU**: FS200R12W3T7B11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €67.7500
**Stock**: 25+
**Lead Time**: 78 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPACK Series |
| Igbt Technology | IGBT7 - T7 [Trench Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 20mW |
| Igbt Configuration | Six Pack |
| Transistor Mounting | Screw |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 200A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4292645/)

**FS200R12W3T7_B11** 

**EasyPACK[™] module** 

## **EasyPACK[™] module with TRENCHSTOP[™] IGBT7 and emitter controlled 7 diode and PressFIT / NTC** 

## **Features** 

- Electrical features 

- VCES = 1200 V 

- IC nom = 200 A / ICRM = 400 A 

- Low V CE,sat 

- Overload operation up to 175°C 

- TRENCHSTOP[TM] IGBT7 

- Mechanical features 

- Al2O3 substrate with low thermal resistance 

- Copper base plate 

- High power and thermal cycling capability 

- Integrated NTC temperature sensor 

- PressFIT contact technology 

## **Potential applications** 

- Motor drives 

- Servo drives 

- Auxiliary inverters 

## **Product validation** 

- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 

## **Description** 

J ~~F~~ 

Please read the Important Notice and Warnings at the end of this document 

Datasheet www.infineon.com 

Revision 1.00 2021-11-02 

**FS200R12W3T7_B11 EasyPACK[™] module** 

**Table of contents** 

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## **Table of contents** 

||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3|
|**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**4**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6|
|**5**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**6**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|**7**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13|
|**8**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15|



Datasheet 

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## **1 Package** 

## **1 Package** 

|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|
|---|---|---|---|---|
|**Table 1**<br>**Insulation coordination**|||||
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**|
|Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|2.5|kV|
|Internal isolation||basic insulation (class 1, IEC 61140)|Al2O3||
|Creepage distance|_d_Creep|terminal to heatsink|11.2|mm|
|Creepage distance|_d_Creep|terminal to terminal|6.8|mm|
|Clearance|_d_Clear|terminal to heatsink|9.4|mm|
|Clearance|_d_Clear|terminal to terminal|5.5|mm|
|Comparative tracking index|_CTI_||>400||
|Relative thermal index<br>(electrical)|_RTI_|housing|140|°C|



**Table 2** 

## **Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Stray inductance module|_L_sCE||||15||nH|
|Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH=25°C, per switch|||1.9||mΩ|
|Storage temperature|_T_stg|||-40||125|°C|
|Mounting torque for module<br>mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|1.3||1.5|Nm|
|Weight|_G_||||78||g|



_Note: The current under continuous operation is limited to 25A rms per connector pin._ 

## **2 IGBT, Inverter** 

|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|
|---|---|---|---|---|---|
|**Table 3**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V|
|Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 40 °C|200|A|
|Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||400|A|
|Gate-emitter peak voltage|_V_GES|||±20|V|



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## **2 IGBT, Inverter** 

## **Characteristic values** 

|||||||||
|---|---|---|---|---|---|---|---|
|**Table 4**<br>**Characteristic values**||||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 200 A,_V_GE= 15 V|_T_vj= 25 °C||1.55|1.80|V|
||||_T_vj= 125 °C||1.69|||
||||_T_vj= 175 °C||1.77|||
|Gate threshold voltage|_V_GEth|_I_C= 4.6 mA, VCE= VGE,_T_vj|= 25 °C|5.15|5.80|6.45|V|
|Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 600 V|||3.34||µC|
|Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.75||Ω|
|Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||40.3||nF|
|Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.14||nF|
|Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||0.02|mA|
|Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA|
|Turn-on delay time<br>(inductive load)|_t_don|_I_C= 200 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gon= 2.7 Ω|_T_vj= 25 °C||0.175||µs|
||||_T_vj= 125 °C||0.191|||
||||_T_vj= 175 °C||0.206|||
|Rise time (inductive load)|_t_r|_I_C= 200 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gon= 2.7 Ω|_T_vj= 25 °C||0.068||µs|
||||_T_vj= 125 °C||0.074|||
||||_T_vj= 175 °C||0.080|||
|Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 200 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gof= 2.7 Ω|_T_vj= 25 °C||0.351||µs|
||||_T_vj= 125 °C||0.413|||
||||_T_vj= 175 °C||0.454|||
|Fall time (inductive load)|_t_f|_I_C= 200 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gof= 2.7 Ω|_T_vj= 25 °C||0.107||µs|
||||_T_vj= 125 °C||0.194|||
||||_T_vj= 175 °C||0.264|||
|Turn-on energy loss per<br>pulse|_E_on|_I_C= 200 A,_V_CE= 600 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 2.7 Ω, di/dt =<br>2100 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||23.6||mJ|
||||_T_vj= 125 °C||34.9|||
||||_T_vj= 175 °C||39.5|||
|Turn-of energy loss per<br>pulse|_E_of|_I_C= 200 A,_V_CE= 600 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 2.7 Ω, dv/dt =<br>3250 V/µs (Tvj= 175 °C)|_T_vj= 25 °C||13.8||mJ|
||||_T_vj= 125 °C||20.8|||
||||_T_vj= 175 °C||25.7|||
|SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 800 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 8 µs,<br>_T_vj=150 °C||640||A|
||||_t_P≤ 7 µs,<br>_T_vj=175 °C||600|||



## **(table continues...)** 

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## **3 Diode, Inverter** 

|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Thermal resistance, junction<br>to heat sink|_R_thJH|per IGBT,λgrease= 3.3 W/(m*K)||0.331||K/W|
|Temperature under<br>switching conditions|_T_vj op||-40||175|°C|



_Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ 

## **3 Diode, Inverter** 

|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**||||
|---|---|---|---|---|---|
|**Table 5**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V|
|Continuous DC forward<br>current|_I_F|||200|A|
|Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||400|A|
|I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|4150|A²s|
||||_T_vj= 175 °C|3800||



## **Table 6 Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Forward voltage|_V_F|_I_F= 200 A,_V_GE= 0 V|_T_vj= 25 °C||1.72|2.10|V|
||||_T_vj= 125 °C||1.59|||
||||_T_vj= 175 °C||1.52|||
|Peak reverse recovery<br>current|_I_RM|_I_F= 200 A,_V_R= 600 V,<br>_V_GE= -15 V, -diF/dt =<br>2100 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||76.8||A|
||||_T_vj= 125 °C||98.9|||
||||_T_vj= 175 °C||115|||
|Recovered charge|_Q_r|_I_F= 200 A,_V_R= 600 V,<br>_V_GE= -15 V, -diF/dt =<br>2100 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||14.5||µC|
||||_T_vj= 125 °C||27.1|||
||||_T_vj= 175 °C||33.1|||
|Reverse recovery energy|_E_rec|_I_F= 200 A,_V_R= 600 V,<br>_V_GE= -15 V, -diF/dt =<br>2100 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||4.02||mJ|
||||_T_vj= 125 °C||7.98|||
||||_T_vj= 175 °C||10.5|||



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## **4 NTC-Thermistor** 

|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Thermal resistance, junction<br>to heat sink|_R_thJH|per diode,λgrease= 3.3 W/(m*K)||0.547||K/W|
|Temperature under<br>switching conditions|_T_vj op||-40||175|°C|



_Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ 

## **4 NTC-Thermistor** 

## **Characteristic values** 

||||||||
|---|---|---|---|---|---|---|
|**Table 7**<br>**Characteristic values**|||||||
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ|
|Deviation of R100|_ΔR/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%|
|Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW|
|B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K|
|B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K|
|B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K|



_Note: Specification according to the valid application note._ 

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## **5 Characteristics diagrams** 

## **5 Characteristics diagrams** 

**output characteristic (typical), IGBT, Inverter** IC = f(VCE) VGE = 15 V 

**output characteristic (typical), IGBT, Inverter** IC = f(VCE) T = 175 °C vj 

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**----- Start of picture text -----**<br>
400 400<br>350 350<br>300 300<br>250 250<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>transfer characteristic (typical), IGBT, Inverter switching losses (typical), IGBT, Inverter<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 2.7 Ω, RGon = 2.7 Ω, VCE = 600 V, VGE = ± 15 V<br>400 160<br>350 140<br>300 120<br>250 100<br>200 80<br>150 60<br>100 40<br>50 20<br>0 0<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300 350 400<br>**----- End of picture text -----**<br>


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## **5 Characteristics diagrams** 

## **switching losses (typical), IGBT, Inverter** 

E = f(RG) IC = 200 A, VCE = 600 V, VGE = ± 15 V 

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220<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br>


## **switching times (typical), IGBT, Inverter** 

t = f(RG) IC = 200 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 

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10<br>1<br>0.1<br>0.01<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br>


**switching times (typical), IGBT, Inverter** t = f(IC) 

RGoff = 2.7 Ω, RGon = 2.7 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 

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**----- Start of picture text -----**<br>
10<br>1<br>0.1<br>0.01<br>0 50 100 150 200 250 300 350 400<br>**----- End of picture text -----**<br>


**Voltage slope (typical), IGBT, Inverter** dv/dt = f(RG) IC = 200 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 

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7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br>


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## **5 Characteristics diagrams** 

**transient thermal impedance , IGBT, Inverter** Zth = f(t) 

## **reverse bias safe operating area (RBSOA), IGBT, Inverter** 

IC = f(VCE) RGoff = 2.7 Ω, VGE = ±15 V, Tvj = 175 °C 

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1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br>


## **capacity characteristic (typical), IGBT, Inverter** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 

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1000<br>100<br>10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br>


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500<br>450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br>


**gate charge characteristic (typical), IGBT, Inverter** VGE = f(QG) IC = 200 A, Tvj = 25 °C 

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15<br>10<br>5<br>0<br>-5<br>-10<br>-15<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>**----- End of picture text -----**<br>


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## **5 Characteristics diagrams** 

## **forward characteristic of (typical), Diode, Inverter** IF = f(VF) 

## **switching losses (typical), Diode, Inverter** 

Erec = f(IF) RG = 2.7 Ω, VR = 600 V 

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**----- Start of picture text -----**<br>
400 16<br>350 14<br>300 12<br>250 10<br>200 8<br>150 6<br>100 4<br>50 2<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 0 50 100 150 200 250 300 350 400<br>switching losses (typical), Diode, Inverter transient thermal impedance , Diode, Inverter<br>Erec = f(RG) Zth = f(t)<br>IF = 200 A, VR = 600 V<br>14 1<br>12<br>10<br>8<br>0.1<br>6<br>4<br>2<br>0 0.01<br>0 5 10 15 20 25 30 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br>


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## **5 Characteristics diagrams** 

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temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)<br>100000<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


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## **6 Circuit diagram** 

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**----- Start of picture text -----**<br>
6 Circuit diagram<br>J<br>**----- End of picture text -----**<br>


**Figure 1** 

Datasheet 

Revision 1.00 2021-11-02 

12 

**FS200R12W3T7_B11 EasyPACK[™] module** 

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## **7 Package outlines** 

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7 Package outlines<br>**----- End of picture text -----**<br>


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dimensioned forchoose length according to pcb thickness  EJOT Delta PT WN5451 25  pcb hole pattern<br>max. screw-in depth 8,5mm 4x  � 3,5<br>( � 4,2) 4x<br>26 W V T2 T1 U<br>24<br>20,8<br>14 14,417,6 E5 E3 G3 E1<br>G5 E2 G2 G1<br>8<br>0 0<br>14<br>G6 G4<br>20,8<br>24<br>26 E6 N3 P2/P3 E4 N1/N2 P1<br>(99,3  � 0,1) Distance of threaded holes in heat sink<br>109,9  � 0,45<br>- Details about hole specification for contacts refer to AN2009-01 chapter 2<br>- Diameters of drill  � 1,15mm<br>- Copper thickness in hole 25~50um<br>recommended design height<br>0,1<br>� 12<br>� 5,4 � 2x  according to screw head washer<br>2x<br>0,45<br> �<br>62<br>3,4)<br>� (<br>0<br>47,43 47,43 0<br>44,43 36,08 32,88 29,68 26,48 16,88 13,68 10,48 7,28 4,08 4,08 7,28 10,48 13,68 16,88 20,08 29,68 32,88 36,08 44,43<br>0,1<br> � (12) W00157092.06<br>12,2 (16,4)<br>**----- End of picture text -----**<br>


## **Figure 2** 

## **8 Module label code** 

|**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**|
|---|---|---|---|---|
|Code format|Data Matrix||Barcode Code128||
|Encoding|ASCII text||Code Set A||
|Symbol size|16x16||23 digits||
|Standard|IEC24720 and IEC16022||IEC8859-1||
||||||
|Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)<br><br> <br> <br> <br> <br>|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23<br>_E_<br>7<br>1<br>5<br>1<br>3||_xample_<br>1549<br>42846<br>5054991<br>5<br>0|
|Example|71549142846550549911530<br>71549142846550549911530||||



## **Figure 3** 

Datasheet 

Revision 1.00 2021-11-02 

13 

**FS200R12W3T7_B11 EasyPACK[™] module** 

**Revision history** 

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## **Revision history** 

|**Revision history**|||
|---|---|---|
|**Document revision**|**Date of release**|**Description of changes**|
|V1.0|2019-09-11|Target datasheet|
|n/a|2020-09-01|Datasheet migrated to a new system with a new layout and new revision<br>number schema: target or preliminary datasheet = 0.xy; final datasheet =<br>1.xy|
|1.00|2021-11-02|Final datasheet|



Datasheet 

Revision 1.00 2021-11-02 

14 

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## Links

- [View this product on Novapart](https://novapart.co/products/FS200R12W3T7B11BPSA1/igbt-module-six-pack-200-a-155-v-20-mw-175-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fs200r12w3t7b11bpsa1/igbt-module-six-pack-1-2kv-200a/dp/4292645)
---

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