# IGBT Module, Six Pack [Full Bridge], 280 A, 1.75 V, 1 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3294636/)

**URL**: https://novapart.co/products/FS200R12PT4BOSA1/igbt-module-six-pack-full-bridge-280-a-175-v-1-kw
**SKU**: FS200R12PT4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €133.4400
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 5Pins |
| Product Range | EconoPACK 4 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Stud |
| Power Dissipation | 1kW |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | Six N Channel |
| Dc Collector Current | 280A |
| Power Dissipation Pd | 1kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 280A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3294636/)

IGBT-Module IGBT-modules 

## FS200R12PT4 

NTC 

VCES = 1200V 

IC nom = 200A / ICRM = 400A 

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- USV-Systeme 

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- CEsat 

- • VCEsat 

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1 

> IGBT-ModuleIGBT-modules FS200R12PT4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS200R12PT4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:MK<br>dateofpublication:2013-11-11<br>revision:2.2<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>200<br>280<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>400<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1000<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 7,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,65<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>3,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>14,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,50<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,14<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,03<br>0,035<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,32<br>0,40<br>0,42<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,09<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 200 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 5400 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>10,5<br>18,5<br>20,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 200 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 5000 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>11,0<br>16,5<br>18,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,15<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,083<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-ModuleIGBT-modules FS200R12PT4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|200|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|5200<br>5000<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,20|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 200 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||240<br>250<br>260||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 200 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||18,5<br>33,5<br>38,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 200 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||8,10<br>14,5<br>16,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,28|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,155||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�MK date�of�publication:�2013-11-11 approved�by:�MK revision:�2.2 

3 

IGBT-Module IGBT-modules 

## FS200R12PT4 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||25,0<br>12,5||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||11,0<br>7,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlk6rper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|20<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,40||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschllsse<br>Terminal connection torque||Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||400||g|



4 

IGBT-Module IGBT-modules 

## FS200R12PT4 

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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>400 a | y v 400 es<br>Tvj = 25°C VGE = 19V<br>360 Tvj = 125°C 360 B VGE = 17V ee<br>E Tvj = 150°C LIS) VGE = 15V |<br>VGE = 13V<br>320 e— 320 VGE = 11V<br>|} fie |} i7eeane<br>VGE = 9V<br>e e<br>280 280<br>ee /<br>240 240<br>[Lsre ee ee/; F; ee<br>200 200<br>160 ee ee 160 ee ee<br>120 ‘ 120<br>ee ee ee<br>80 80<br>40 Ane 40 eee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =1.1 Ω ,V CE =600V<br>400 60<br>Tvj = 25°C Eon, Tvj = 125°C<br>360 F Tvj = 125°C e 55 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>50 Eoff, Tvj = 150°C<br>poo | | HTT<br>320<br>45<br>tt S l seer,<br>SR )<br>280<br>40<br>| | /<br>240<br>pt 2 35 e e<br>/, pop<br>|ee) Eee<br>200 30<br>pi pe<br>25<br>160 ee eee ee ee eee<br>/ 20 Po eae<br>120<br>Py ee<br>15<br>80<br>10<br>SP<br>40<br>5<br>0 poet: pop~ 4B 0 e T | ee| |<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300 350 400<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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## IGBT-Module IGBT-modules 

## FS200R12PT4 

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Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =200A,V CE =600V<br>80 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C ror e ee<br>70 [-a EEonoff, T, Tvjvj = 150°C = 150°C T l tye] HOa a e ee F e e |<br>T I a a ee 0e e<br>60<br>0,1<br>5040 PPt)f] LATLoLaer}waLT Ty| | PE a PT T TY ZeeTTTeHee CTEH|TTT COT<br>30 P) ASZL YT yyy | Potpfiffi TA TT EEfp ad<br>0,01<br>PAZoott<br>20 SYy (7B| TTeeeAN<br>pO<br>ESSE) PT TT TTT i:    1    TT 2    3    4    TT T<br>10 ri[K/W]:   0,009   0,0495   0,048   0,0435<br>τ i[s]:    0,01    0,02    0,05    0,1<br>SRRRRSS<br>0 0,001<br>SRR ee aiillime i<br>0 1 2 3 4 5 6 7 8 9 10 11 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =1.1 Ω ,T vj =150°C<br>500 400<br>IC, Modul Tvj = 25°C<br>450 IC, Chip 360 Tvj = 125°C<br>EIT P Tvj = 150°C oe<br>400 320<br>eee PE E<br>350 280<br>300 240<br>250 200<br>See eee eee<br>200 160<br>ee eee<br>150 120<br>100 80<br>50 40<br>pot tt | er<br>0 0<br>Pt |EL er<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

## IGBT-Module IGBT-modules Technische Information FS200R12PT4 / Technical Information 

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**----- Start of picture text -----**<br>
Erec = fil F) Erec =f(R G)<br>RGon =1.1 Ω ,V CE =600V IF =200A,V CE =600V<br>30 20<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C 18 Erec, Tvj = 150°C<br>25<br>— an 16 Ber e eee<br>14<br>20<br>12<br>15 10<br>or ett |SAE<br>8<br>vaa ef yt | |)ee<br>10<br>6 See<br>4<br>5<br>2<br>0 0<br>0 50 100 150 200 250 300 350 400 0 1 2 3 4 5 6 7 8 9 10 11<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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ZthJC = f (t) R=f(T)<br>1 100000<br>| ZthJC : Diode ry eee | Rtyp a se<br>$F SIP [— fF<br>o o TT jy<br>rT TT T T TT se<br>a a<br>Ha n PF | ET<br>0,1 10000<br>eeoe ee PNa<br>PT Ta TT ES NN se ee<br>rE Tt TT TT Ne ee ee<br>70 pot NE<br>PIE TE 2 ee eee<br>0,01 1000<br>eeeee aa a<br>PT TTT ETT NS<br>rT [TT] TT TT seee<br>i:    1    2    3    4<br>ri[K/W]:   0,0156   0,0858   0,0832   0,0754<br>a τ i[s]:    0,01    0,02    0,05    0,1    | | cc<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS200R12PT4 

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Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>


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## **Vorläufige�Daten Preliminary�Data** 

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**----- Start of picture text -----**<br>
prepared�by:�MK date�of�publication:�2013-11-11<br>approved�by:�MK revision:�2.2<br>**----- End of picture text -----**<br>


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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS200R12PT4 

## **Nutzungsbedingungen** 

## application. 

9 



## Links

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- [Supplier page](https://es.farnell.com/infineon/fs200r12pt4bosa1/igbt-mod-6-n-ch-1-2kv-280a-1kw/dp/3294636)
---

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