# IGBT Module, Six Pack [Full Bridge], 280 A, 1.75 V, 1 kW, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726182/)

**URL**: https://novapart.co/products/FS200R12KT4RBOSA1/igbt-module-six-pack-full-bridge-280-a-175-v-1-kw
**SKU**: FS200R12KT4RBOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €84.8500
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:280A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Tran

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | Econo 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 1kW |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 280A |
| Power Dissipation Pd | 1kW |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 280A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726182/)

IGBT-模块 IGBT-modules 

## FS200R12KT4R 

VCES = 1200V 

IC nom = 200A / ICRM = 400A 

## **典型应用** 

- 电机传动 

- 伺服驱动器 

- 

- 

## **电气特性** 

- CEsat 

- • 沟槽栅IGBT4 

- T 

- CEsat 

- 

- T 

## **机械特性** 

- (RAR =Sib—a ( Al 2O3 

- • 铜基板 • 标封装 

- Al2O3 

- 

- 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FS200R12KT4R 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FS200R12KT4R<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-11-05<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>200<br>280<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>400<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>1000<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 7,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,65<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>3,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>14,0<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,50<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,14<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,03<br>0,035<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,32<br>0,40<br>0,42<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 200 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,09<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 200 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 5400 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>10,5<br>18,5<br>20,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 200 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 5000 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>11,0<br>16,5<br>18,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,15<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,085<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-模块IGBT-modules FS200R12KT4R 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|200|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|5200<br>5000|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,20|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 200 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||240<br>250<br>260||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 200 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||18,5<br>33,5<br>38,5||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 200 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||8,10<br>14,5<br>16,0||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,26|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,15||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�CM date�of�publication:�2013-11-05 approved�by:�RS revision:�2.0 

3 

IGBT-模块 IGBT-modules 

## FS200R12KT4R 

## **初步数据** 

|#tk | Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 200<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009|K/W|
|杂散电感,模块||LsCE||21|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>1,80<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|重量<br>Weight||G||300|g|



Der Strom im Dauerbetrieb ist auf 50 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to  50 A rms per connector pin. 

4 

IGBT-模块 IGBT-modules 

## FS200R12KT4R 

## **初步数据** 

**==> picture [487 x 606] intentionally omitted <==**

**----- Start of picture text -----**<br>
I output C  characteristic CE) IGBT,Inverter (typical) I output C characteristic CE) IGBT,Inverter (typical)<br>VGE Tvj<br>400 400<br>a y vo a<br>Tvj = 25°C VGE = 19V<br>360 Tvj = 125°C 360 VGE = 17V<br>E Tvj = 150°C LOY) VGE = 15V Oe<br>VGE = 13V<br>320 es ise 320 || VGE = 11V | aA | |<br>VGE = 9V<br>280 p o 280 e e<br>240 240<br>eeSeere ee ee eeeeee]7? eeeee<br>200 200<br>160 160<br>ae ee eee) Zee<br>120 120<br>pf | ee eeeeon<br>80 80<br>ee ee ee<br>40 Ane/  eee 40 Yaa<br>pe<br>0 0<br>| LA<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>eStE IGBT, EBS (FAB) FFI IGBT, WBE ( HAA)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE eo VGE we Gon Sa Ω JR Goff =1.1 Ω ,V CE =600V<br>400 60<br>Tvj = 25°C Eon, Tvj = 125°C<br>360 Tvj = 125°C 55 Eoff, Tvj = 125°C<br>r Tvj = 150°C n Eon, Tvj = 150°C<br>50 Eoff, Tvj = 150°C<br>320<br>el ee |ft<br>45<br>SSG000/ 40 0<br>280<br>40<br>A pt | | te<br>240<br>35<br>Pt/, poppe<br>200 30<br>Pi 25 ee<br>160<br>20<br>PEP<br>120<br>15<br>80<br>Soe) See]eee er 10 ae<br>OA) pee<br>40<br>74 5 eecae|<br>0 0<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300 350 400<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FS200R12KT4R 

## **初步数据** 

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**----- Start of picture text -----**<br>
switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,| C =200A,V CE =600V<br>80 ——_ Eon, Tvj = 125°C 1 S ZthJC : IGBT one<br>Eoff, Tvj = 125°C ooo or TT TT TTT]<br>70 [- Eon, Tvj = 150°C T l tye] HH— E E HH}ee tH<br>Eoff, Tvj = 150°C<br>ae YT TT TE TTT rT TTT TT TTT<br>T TI oe |<br>60<br>aaa a a en<br>0,1<br>50 PP] |)haerewa yp PHLLUTTTrFEI-AFEE n CTHHH<br>40 P|)ALAT |) | |) aRRR22eeeie|<br>30 P) A YT yyy | a)PTA, AETI, ETE ET<br>J ed a<br>0,01<br>7H EE $F$ Et} | FH]<br>20 SYS YrPAAttete<br>CPERPEEES | TT oT TTT i:    1    rT TTT 2    3    TT 4     T TT<br>10 ri[K/W]:   0,009   0,0495   0,048   0,0435<br>EE) FS  n τ i[s]:    0,01    0,02    r 0,05    0,1<br>TELE PETITpolTi ll<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 11 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA ) Fa mESst REGS ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =1.1 Ω ,T vj =150°C<br>500 400<br>IC, Modul Tvj = 25°C<br>450 IC, Chip 360 Tvj = 125°C<br>EI P Tvj = 150°C O<br>400 320<br>ee Ae<br>350 280<br>300 240<br>250 eee 200 eee<br>200 160<br>eee SOCCER<br>150 120<br>100 80<br>Fe ee 9<br>50 40<br>PoE er<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

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IGBT-模块IGBT-modules FS200R12KT4R<br>**----- End of picture text -----**<br>


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初步数据<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon a Ω ,V CE =600V IF = 200A, V CE = 600 V<br>30 20<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C 18 Erec, Tvj = 150°C<br>25<br>16<br>14<br>clef LAE<br>20<br>12<br>15 P| | HTT]ee 10 PLLEESSS NELeeeEEEEE EE<br>8<br>Leer Ee<br>10<br>6<br>4<br>At LL) GeEEEEEEEFE<br>5<br>TTT) 2 Gee<br>0 0<br>0 50 100 150 200 250 300 350 400 0 1 2 3 4 5 6 7 8 9 10 11<br>IF [A] RG [ Ω ]<br>transientRASTAthermal— iS, impedancees Diode, Inverter RBEABARNTC-Thermistor-temperatureBH BER characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>ZthJC : Diode Rtyp<br>{— et [I ———<br>Re pe<br>PT a  TT TTT TTT aa e eee ee<br>a eee a e e<br>0,1 AN K 10000<br>PT Ta TT ES NN se ee<br>rEel Tt TT TT aPNNe a eeee<br>PIE TE 2 ee eee<br>0,01 ANIM 1000<br>PEE TUEHH MNSH EN—————<br>a a a<br>PT TTT ETT NS<br>PT P| [TT] TTT TTT aa eeeeeeee<br>i:    1    2    3    4<br>ri[K/W]:   0,0156   0,0858   0,0832   0,0754<br>PT τ i[s]:    0,01    0,02    T 0,05    0,1    f ee<br>0,001 LAME mom «df 100 |<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FS200R12KT4R 

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接线图�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>


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## **初步数据 Preliminary�Data** 

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Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�CM date�of�publication:�2013-11-05 approved�by:�RS revision:�2.0 

8 

IGBT-模块 IGBT-modules 

## FS200R12KT4R 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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## Links

- [View this product on Novapart](https://novapart.co/products/FS200R12KT4RBOSA1/igbt-module-six-pack-full-bridge-280-a-175-v-1-kw)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fs200r12kt4rbosa1/transistor-igbt-module-1-2kv-280a/dp/2726182)
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