# IGBT Module, Six Pack [Full Bridge], 200 A, 1.45 V, 600 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726181/)

**URL**: https://novapart.co/products/FS200R06KE3BOSA1/igbt-module-six-pack-full-bridge-200-a-145-v-600-w
**SKU**: FS200R06KE3BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €62.7000
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Trans

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK 3 |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 600W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 200A |
| Power Dissipation Pd | 600W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 200A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Saturation Voltage Vce(On) | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726181/)

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS200R06KE3 

**==> picture [86 x 38] intentionally omitted <==**

EconoPACK™3�mit�schnellem�Trench/Feldstop�IGBT³�und�Emitter�Controlled3�Diode� EconoPACK™3�with�fast�trench/fieldstop�IGBT³�and�Emitter�Controlled3�diode� 

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS200R06KE3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EconoPACK™3mitschnellemTrench/FeldstopIGBT³undEmitterControlled3Diode<br>EconoPACK™3withfasttrench/fieldstopIGBT³andEmitterControlled3diode<br>preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 60°C, Tvj max= 175°C<br>IC nom<br>200<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>400<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>600<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 3,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,15<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>13,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,38<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,0Ω<br>td on<br>0,15<br>0,16<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,0Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,0Ω<br>td off<br>0,34<br>0,37<br>0,38<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,0Ω<br>tf<br>0,06<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 200 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 5700 A/µs (Tvj= 150°C)<br>RGon= 2,0Ω<br>Eon<br>1,00<br>1,55<br>1,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 200 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 2,0Ω<br>Eoff<br>5,65<br>6,70<br>6,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1400<br>1000<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,25<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,085<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

> IGBT-ModuleIGBT-modules FS200R06KE3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|200|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|2850<br>2700<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 200 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||160<br>230<br>240||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 200 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||10,0<br>17,0<br>20,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 200 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,00<br>5,20<br>5,80||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,45|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,15||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�CM date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 

2 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS200R06KE3 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||7,5|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 225|||
||||min.|typ.|max.||
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||21||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,80||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm|
|Gewicht<br>Weight||G||300||g|



Der Strom im Dauerbetrieb ist auf 50 A effektiv pro Anschlusspin begrenzt. The current under continuous operation ist limited to 50 A rms per connector pin. 

prepared�by:�CM approved�by:�RS 

date�of�publication:�2013-10-03 revision:�2.0 

3 

## IGBT-Module IGBT-modules Technische Information FS200R06KE3 / Technical Information 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>400 a . 400 es<br>Tvj = 25°C VGE = 19V<br>360 Tvj = 125°C 360 P VGE = 17V oe<br>E Tvj = 150°C E) VGE = 15V |<br>VGE = 13V<br>320 Pao e e 320 VGE = 11V OE<br>| | | jy io LaeT<<br>VGE = 9V<br>280 280<br>Si ae<br>SRRRRRR ee eee eee<br>240 240<br>ae F<br>200 200<br>Pett TT beri‘;  PE eA/<br>160 BRREEEPE/ ’ 160 Bi)[ii / /<br>/<br>120 120<br>[1 /<br>80 80<br>TEE TALL TEP EL et“<br>Potiig tt<br>40 40<br>pie r TTT} LY<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =2 Ω ,R Goff =2 Ω ,V CE =300V<br>400 16<br>Tvj = 25°C Eon, Tvj = 125°C<br>360 EF TT [H] vjvj = 125°C = 150°C [Y)] 14 FO EEoffon, T, Tvjvj = 125°C = 150°C VIL.<br>Eoff, Tvj = 150°C<br>320<br>m e ] | Eb<br>yf 12 | | Ya<br>280 lf RG<br>ee :ee 10 Z1<br>240<br>~<br>200 8<br>ee eeeee<br>f<br>160<br>pt | se 6 <<br>120<br>pt | tg Ae :<br>4<br>80<br>2<br>40<br>pt tay | | eet<br>ne<br>0 0<br>5 6 7 8 9 10 11 12 0 50 100 150 200 250 300 350 400<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

## IGBT-Module IGBT-modules Technische Information FS200R06KE3 / Technical Information 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =200A,V CE =300V<br>20 1<br>Eon, Tvj = 125°C 1 ZthJC : IGBT a<br>18 —_— Eoff, Tvj = 125°C r it tf fo SeHH— ror eEE eeHH} tH<br>Eon, Tvj = 150°C PT TT T T<br>Eoff, Tvj = 150°C a a e e|<br>16<br>14 pp de pi ll<br>0,1<br>1210 Pf fff LeaAaaL 4 aaaPTa 2YeBa a20yea eeeee|ee ee<br>va a a |<br>8<br>0,01<br>64 P|poeeryTZt | tf| || dd | 7_eeaPT TT ee eVeee<br>i:    1    2    3    4<br>2 eeESRRREEREE PTein TT T r τ ii[K/W]:   [s]:    0,015   0,01    T 0,0825   0,02    0,08   0,05   0,0725   0,1    l l<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =2 Ω ,T vj =150°C<br>440 400<br>a 7<br>IC, Modul Tvj = 25°C<br>400 a I C , Chip A 360 | Tvj = 125°C ny<br>Tvj = 150°C<br>360<br>320<br>320<br>280<br>280<br>240<br>240<br>Se ee<br>200<br>200<br>160<br>160<br>120<br>120<br>80<br>80<br>40 40<br>0 0<br>Ss<br>0 100 200 300 400 500 600 700 0,0 0,4 0,8 1,2 1,6 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

IGBT-Module IGBT-modules 

## FS200R06KE3 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =2 Ω ,V CE =300V IF =200A,V CE =300V<br>9 8,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>8 Erec, Tvj = 150°C Erec, Tvj = 150°C<br>Es 7,0 IE<br>7<br>TT T Pe<br>6,0<br>6<br>5,0<br>Hitt tebe RTT<br>5 ERE ‘ SZa ene X\ SS<br>a Nan<br>4,0<br>4<br>3,0<br>3<br>byt ty WS<br>/ EL Ere<br>2,0<br>2<br>1 ATTTTTy} 1,0 LEee<br>0 0,0<br>0 40 80 120 160 200 240 280 320 360 400 0 2 4 6 8 10 12 14 16 18<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC = f (t) R=f(T)<br>1 100000<br>' {— ZthJC : Diode e a t i [I Rtyp a ———<br>o o TT jy<br>PT a  T T a e eee ee<br>BEAU cal NATO AT e a eeeee<br>0,1 e Z 10000<br>a ee<br>a SS<br>PT T VU ET ES NN se ee<br>PT VET TTT TTT TTT a Ne a ee<br>A potNEee<br>CN aI 2 ee eee<br>0,01 CANIM 1000<br>PtLVN TANT VM LfeeON<br>a a a<br>PT TTT ETT NS<br>PT [TT] TTT TTT a eeee<br>i:    1    2    3    4<br>ri[K/W]:   0,027   0,1485   0,144   0,1305<br>a τ i[s]:    0,01    0,02    0,05    0,1    | | ee ee<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS200R06KE3 

**==> picture [217 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
Schaltplan�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>


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## **Vorläufige�Daten Preliminary�Data** 

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**----- Start of picture text -----**<br>
J<br>**----- End of picture text -----**<br>


## **Gehäuseabmessungen�/�package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�CM date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 

7 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS200R06KE3 

## **Nutzungsbedingungen** 

## application. 

8 



## Links

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- [Supplier page](https://es.farnell.com/infineon/fs200r06ke3bosa1/transistor-igbt-module-600v-200a/dp/2726181)
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