# IGBT Module, Six Pack [Full Bridge], 150 A, 1.75 V, 175 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726179/)

**URL**: https://novapart.co/products/FS150R12KT4BOSA1/igbt-module-six-pack-full-bridge-150-a-175-v-w-c
**SKU**: FS150R12KT4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €90.7200
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:175W; Collector Emitter Voltage V(br)ceo:1.2kV; Tra

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 175W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 150A |
| Power Dissipation Pd | 175W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 150A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726179/)

技术信息�/�Technical�Information IGBT-模块IGBT-modules FS150R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

EconoPACK™3�Modul��mit�Trench/Feldstopp�IGBT4�und�Emitter�controlled�4�diode�� EconoPACK™3�module��with�trench/fieldstop�IGBT4�and�emitter�controlled�4�diode� 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

**初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>FS150R12KT4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|EconoPACK™3ModulmitTrench/FeldstoppIGBT4undEmittercontrolled4diode<br>EconoPACK™3modulewithtrench/fieldstopIGBT4andemittercontrolled4diode<br>preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 90°C, Tvj max= 175°C<br>IC nom<br>150<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>300<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>750<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 5,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,25<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>5,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>9,35<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,35<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,115<br>0,13<br>0,135<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,025<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,37<br>0,45<br>0,48<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,06<br>0,105<br>0,125<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 6000 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>5,00<br>9,00<br>10,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>10,0<br>15,0<br>16,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,20<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,083<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FS150R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|150|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|300|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|3050<br>2950|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||220<br>240<br>250||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 150 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||14,0<br>25,0<br>28,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 6000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||7,00<br>11,5<br>13,5||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,375|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,155||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定|||||||



Specification�according�to�the�valid�application�note. 

prepared�by:�CM date�of�publication:�2013-11-04 approved�by:�RS revision:�2.1 

2 

IGBT-模块 IGBT-modules 

## FS150R12KT4 

## **初步数据** 

|#tk | Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 200<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009|K/W|
|杂散电感,模块||LsCE||21|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>1,80<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|重量<br>Weight||G||300|g|



3 

## IGBT-模块 IGBT-modules 

## FS150R12KT4 

## **初步数据** 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>300 a | y v 300 es<br>Tvj = 25°C VGE = 19V<br>270 Tvj = 125°C 270 F VGE = 17V one<br>E Tvj = 150°C OE) VGE = 15V |<br>VGE = 13V<br>240 Pe 240 VGE = 11V i2ceann<br>VGE = 9V<br>e e<br>210 210<br>ee ee<br>eee /<br>180 180<br>[Ls eee eee) eae<br>eaea eee/' : eee.<br>150 150<br>120 ae eee 120 eee) Zee<br>90 eee 90 bt |<br>eeee¢ eeee_ J<br>60 60<br>30 30<br>P| YT | ap ZGRRREEe<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =1.1 Ω ,V CE =600V<br>300 40<br>Tvj = 25°C Eon, Tvj = 125°C<br>270 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C 35 Eon, Tvj = 150°C<br>(e e a ee<br>Eoff, Tvj = 150°C<br>oe ee<br>240 —<br>30<br>p t Eby<br>210<br>pt 25 LE774<br>180 eeVe ann<br>150 20<br>47<br>120<br>PPP TAT)eeOP 15 eeeLe<br>90<br>plot Al 10 PL“en a er<br>60<br>pi | tz | ——<br>a Ane 5 CF<br>30<br>ee= = [Baie] [-]<br>0 0<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

IGBT-模块 IGBT-modules 

## FS150R12KT4 

## **初步数据** 

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**----- Start of picture text -----**<br>
Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =150A,V CE =600V<br>30 1<br>— HE<br>EEonoff, T, Tvjvj = 125°C = 125°C . A ZthJC : IGBT e e eee oo<br>Eon, Tvj = 150°C<br>25 E Eoff, Tvj = 150°C L [ie] en aa a<br>i a | |<br>PT T<br>20<br>a |)  A<br>tL<br>15 0,1 PePT7te<br>Va | TIa T<br>f PT TTY, TTTTTT|<br>105 PF yy ff | OnEeyA/(\ ge||<br>i:    1    2    3    4<br>ri[K/W]:   0,012   0,066   0,064   0,058<br>τ i[s]:    0,01    0,02    0,05    0,1<br>A iL<br>0 0,01<br>0 2 4 6 8 10 12 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Rin2SLF K IGBT, ass ( RBSOA ) TEM aS MB sss ( FRR)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE SVR Goff =1.1 Ω ,T vj =150°C a<br>350 300<br>IC, Modul Tvj = 25°C<br>IC, Chip 270 Tvj = 125°C<br>300 EJ) | F Tvj = 150°C e<br>> ho |<br>240<br>ee<br>250<br>ee 210 aeeeeeeeeren<br>180<br>200<br>150<br>150<br>120<br>90<br>100<br>ei tt ty SEROGE? SEED<br>60<br>aes i/<br>50<br>Sane aneeee<br>30<br>PP e a ee/|<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FS150R12KT4 

## **初步数据** 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon ay Ω ,V CE =600V IF = i608. V CE = 600 V<br>20 16<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>18 EJ Erec, Tvj = 150°C |) 14 fF Erec, Tvj = 150°C<br>16<br>12<br>14<br>10<br>12 ae eee eeee<br>10 ne ecra 8 ee<br>8<br>6<br>6<br>4<br>4<br>2<br>2<br>0 0<br>0 50 100 150 200 250 300 0 2 4 6 8 10 12<br>IF [A] RG [ Ω ]<br>BB ASIANBHL — AS eae SURE ABGABCB IA ISH<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 (eee ee 100000 ee |<br>ZthJC : Diode Rtyp<br>H— SF —E—————<br>a es<br>| | DO<br>an eee ne eee a<br>10000<br>EINE | Del EINE ETT Nee<br>/ —<br>/ a<br>0,1<br>StSePOS ooo<br>reA aN~ eee<br>a 1000 ————_————<br>a | ee ll J} s—______|<br>i:    1    2    3    4<br>ri[K/W]:   0,0225   0,12375   0,12   0,10875<br>Aa τ i[s]:    0,01    0,02    a 0,05   0,1<br>0,01 Tomo 100 Pt tT TE EE<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FS150R12KT4 

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接线图�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>


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## **初步数据 Preliminary�Data** 

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Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�CM date�of�publication:�2013-11-04 approved�by:�RS revision:�2.1 

7 

IGBT-模块 IGBT-modules 

## FS150R12KT4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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8 



## Links

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> specialises in exactly the cases where availability is the real problem: stock
> shortages, allocation crises, end-of-life components, and cost-reduction
> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.