# IGBT Module, Trench/Fieldstop, Six Pack [Full Bridge], 150 A, 1.75 V, 750 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2803385/)

**URL**: https://novapart.co/products/FS150R12KT4B9BOSA1/igbt-module-trench-fieldstop-six-pack-full-bridge
**SKU**: FS150R12KT4B9BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €87.6400
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:1.2kV; Transisto

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 750W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 150A |
| Power Dissipation Pd | 750W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 150A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2803385/)

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FS150R12KT4_B9 

**==> picture [86 x 38] intentionally omitted <==**

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**Vorläufige�Daten Preliminary�Data** 

|TechnischeInformation/TechnicalInformation<br>FS150R12KT4_B9<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EconoPACK™3ModulmitTrench/FeldstopIGBT4undverdoppelterEmitterControlled4DiodenBestückung<br>EconoPACK™3modulewithtrench/fieldstopIGBT4anddoubledmountingEmitterControlled4diode<br>preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.2<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>150<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>300<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>750<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 5,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,25<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>5,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>9,35<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,35<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,14<br>0,15<br>0,16<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,025<br>0,033<br>0,036<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,35<br>0,43<br>0,44<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,05<br>0,075<br>0,085<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 5000 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>8,10<br>14,5<br>16,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 4400 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>8,30<br>13,0<br>14,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,20<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,11<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FS150R12KT4_B9 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|12500<br>9800<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,40<br>1,30<br>1,25|1,85|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 5000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||270<br>300<br>310||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 5000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||18,5<br>31,0<br>37,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 5000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||6,90<br>13,0<br>14,5||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,19|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,105||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



prepared�by:�CM approved�by:�RS 

date�of�publication:�2013-11-04 revision:�2.2 

2 

IGBT-Module IGBT-modules 

## FS150R12KT4_B9 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|20<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,80||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||300||g|



3 

## IGBT-Module IGBT-modules Technische Information FS150R12KT4_B9 / Technical Information 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>300 a | y v 300 es<br>Tvj = 25°C VGE = 19V<br>270 Tvj = 125°C 270 B VGE = 17V ee<br>E Tvj = 150°C LIS) VGE = 15V |<br>VGE = 13V<br>240 Pe 240 VGE = 11V i2ceann<br>VGE = 9V<br>e e<br>210 210<br>ee ee<br>eeeaf /<br>180 180<br>/ re eee eee)/; F; eae<br>150 150<br>120 ae eee 120 eee) Zee<br>90 [fo 90<br>ee ¢ ee A J "|<br>/<br>60 60<br>30 Aneeee 30 eee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =1.1 Ω ,V CE =600V<br>300 40<br>Tvj = 25°C Eon, Tvj = 125°C<br>270 Tvj = 125°C Eoff, Tvj = 125°C<br>ee Tvj = 150°C a 35 e Eon, Tvj = 150°C e<br>Eoff, Tvj = 150°C<br>240<br>a] aa<br>30<br>210<br>pt TP T<br>25<br>180<br>CCEA e e<br>150 20<br>ee<br>120<br>ee 15 ee<br>90<br>10<br>60<br>SCAT) 5 LAE<br>30<br>4. wet<br>0 0<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-Module IGBT-modules 

## FS150R12KT4_B9 

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Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =150A,V CE =600V<br>45 -— 1 a<br>Eon, Tvj = 125°C ZthJC : IGBT<br>40 Eoff, Tvj = 125°C P) ff |A eee e ee eoo<br>Eon, Tvj = 150°C a ee |<br>Eoff, Tvj = 150°C<br>ee a a<br>3530 P ]— f eetoo a T a E | |<br>25<br>Pl ee | | LUIWiel-CULINE | TA<br>4 “ii<br>0,1<br>20 i | | | EEE<br>/ EE<br>eA<br>1510 pARESISREPVA anEea |Vr<br>i:    1    2    3    4<br>5 PF YTSSSRUP Of PY LIA | TT | UI ri[K/W]:    CT 0,012    EIN 0,066   0,064    ELI 0,058<br>τ i[s]:    0,01    0,02    0,05    0,1<br>PLA rAl ll<br>0 0,01<br>0 2 4 6 8 10 12 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Durchlasskennlinie der Diode, Wechselrichter (typisch) Schaltverluste Diode, Wechselrichter (typisch)<br>forward characteristic of Diode, Inverter (typical) switching losses Diode, Inverter (typical)<br>IF =f(V F) Erec =f(l F)<br>RGon = { 1 Ω ,V CE =600V<br>300 20<br>Tvj = 25°C Erec, Tvj = 125°C<br>270 F Tvj = 125°C a 18 e Erec, Tvj = 150°C e<br>Tvj = 150°C<br>240 Pe s ea 16 E T ee<br>210 14<br>PP ET eA PE e e<br>180 12<br>PPE EE EPere<br>PPEP/ / Y<br>150 10<br>EEErr<br>BRR<br>120 8<br>BRRRe 7 eee eee<br>90 6<br>60 4<br>PP itt ayALeeeTT? PZTeee|<br>30 2<br>0 0<br>Pt at TT | CL EE<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 0 30 60 90 120 150 180 210 240 270 300<br>VF [V] IF [A]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-Module IGBT-modules 

## FS150R12KT4_B9 

**==> picture [485 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(R G) ZthJC =fi(t<br>IF i604. V CE = 600 V 0<br>16 Cd 1 ee<br>| TE<br>Erec, Tvj = 125°C ZthJC : Diode<br>Erec, Tvj = 150°C<br>14 Se el H—a E t<br>12 ie:  ee—— e Cerne PA  Ce CETi<br>10 F c ee es<br>Rees U l<br>8 0,1<br>rT TTT AL TTT<br>64 PfPf fffo ft ff]P| PFErTAZet)TTTAZT1 EE HEiEt<br>a<br>a ee | i:    1    ea 2    3    4    | |<br>2 ri[K/W]:   0,0114   0,0627   0,0608   0,0551<br>τ i[s]:    0,01    0,02    0,05    0,1<br>A<br>0 0,01<br>0 2 4 6 8 10 12 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FS150R12KT4_B9 

**==> picture [86 x 38] intentionally omitted <==**

## **Schaltplan�/�circuit_diagram_headline** 

## **Vorläufige�Daten Preliminary�Data** 

## **Gehäuseabmessungen�/�package�outlines** 

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|preparedby:CM|dateofpublication:2013-11-04|
|---|---|
|approvedby:RS|revision:2.2|



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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS150R12KT4_B9 

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Nutzungsbedingungen<br>**----- End of picture text -----**<br>


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application.<br>**----- End of picture text -----**<br>


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## Links

- [View this product on Novapart](https://novapart.co/products/FS150R12KT4B9BOSA1/igbt-module-trench-fieldstop-six-pack-full-bridge)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fs150r12kt4b9bosa1/igbt-module-n-ch-1-2kv-150a/dp/2803385)
---

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