# IGBT Module, Six Pack [Full Bridge], 200 A, 1.7 V, 700 W, 125 °C, Module

![Product image](https://novapart.co/image/farnell:2726177/)

**URL**: https://novapart.co/products/FS150R12KE3BOSA1/igbt-module-six-pack-full-bridge-200-a-17-v-700-w
**SKU**: FS150R12KE3BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €100.1300
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:700W; Collector Emitter Voltage V(br)ceo:1.2kV; Tran

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | Econo 3 |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 700W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 200A |
| Power Dissipation Pd | 700W |
| Transistor Case Style | Module |
| Operating Temperature Max | 125°C |
| Junction Temperature Tj Max | 125°C |
| Continuous Collector Current | 200A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Saturation Voltage Vce(On) | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726177/)

技术信息�/�Technical�Information IGBT-模块IGBT-modules FS150R12KE3 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FS150R12KE3<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:MM<br>approvedby:RS<br>dateofpublication:2013-10-02<br>revision:3.1<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>150<br>200<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>300<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>700<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>VCE sat<br>1,70<br>2,00<br>2,15<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 6,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,40<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>5,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>10,5<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,40<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 2,4Ω<br>td on<br>0,26<br>0,29<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 2,4Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 2,4Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 2,4Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 70 nH<br>VGE= ±15 V<br>RGon= 2,4Ω<br>Eon<br>16,0<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 70 nH<br>VGE= ±15 V<br>RGoff= 2,4Ω<br>Eoff<br>17,0<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>600<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,18<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C||



|preparedby:MM|dateofpublication:2013-10-02|
|---|---|
|approvedby:RS|revision:3.1|



1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FS150R12KE3 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|150|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|300|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|4550|||A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,65<br>1,65|2,15|V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 4000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||190<br>210||A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 150 A, - diF/dt = 4000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||17,0<br>30,0||µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 4000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||7,00<br>13,0||mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,34|K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�MM date�of�publication:�2013-10-02 approved�by:�RS revision:�3.1 

2 

IGBT-模块 IGBT-modules 

## FS150R12KE3 

|#tk | Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>内部绝缘<br>~~Isolation test voltage~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~||2,5<br>AI203||kV|
|爬电距离<br>Creepage distance|im-BEXH /terminal toheatsink<br>iimF-Um /terminal to terminal|||10,0||mm|
|电气间隙<br>Clearance|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal|||7,5||mm|
|相对电痕指数<br>~~Comperative tracking index~~|~~ee ~~|CTI<br> ~~ee~~|min.|> 225<br>typ.|max.||
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|杂散电感,模块||LsCE||21||nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee~~<br>**S**eeM5ARSEAR VAY OyA AET<br>crew M5<br>- Mounting according to valid application note|RCC'+EE'<br>1,80<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~||||mΩ<br>°C<br>Nm|
|重量<br>Weight||G||300||g|



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IGBT-模块 IGBT-modules 

## FS150R12KE3 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>300 300<br>Tvj = 25°C VGE = 19V<br>270 F= Tvj = 125°C J.a fe 270 | VGE = 17V L ye Fae<br>VGE = 15V<br>VGE = 13V<br>240 n e e e ee 240 | VGE = 11V ivaPan<br>VGE = 9V<br>r e<br>210 210<br>/ ee e ee<br>| PA e a<br>180 180<br>Pt 7 a /\ 7<br>150 150<br>eae ee eee eee<br>120 120<br>ee eee eee) A e<br>90 ee / , 90 7<br>es ceee<br>60 60<br>30 30<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (BB) FFHIRE IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =24 Ω ,R Goff =24 Ω ,V CE =600V<br>300 40<br>Tvj = 25°C Eon, Tvj = 125°C<br>270 (a Tvj = 125°C  Oe | Eoff, Tvj = 125°C<br>35<br>240<br>HTT | | Ve (<br>30<br>210<br>pf f p | ty | ie<br>| A 25 nnn oa<br>180<br>150 ee 20<br>ee ee ee<br>120<br>15<br>CEES a<br>90<br>10<br>60<br>Ty td<br>5<br>30<br>im<br>0 0<br>Ply TTTTy } LEE] ty<br>5 6 7 8 9 10 11 12 0 50 100 150 200 250 300<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-模块 IGBT-modules 

## FS150R12KE3 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =150A,V CE =600V<br>35 1<br>—— Eon, Tvj = 125°C H ZthJC : IGBT E<br>Eoff, Tvj = 125°C a a<br>30 “| tt<br>TJ | a ee |<br>7 a a ee ||<br>oa a |<br>25 r a<br>20<br>er —<br>r rl<br>0,1<br>EZ<br>15 PT TTA<br>10 PP] | fy dd YTaAaTTT ZT [TTT] ||<br>0) ( ) A<br>5 i:    1    2    3    4<br>ri[K/W]:   0,00341    0,01039   0,09061   0,07559<br>τ i[s]:    0,0000119   0,02364   0,02601   0,06499<br>aaa homo A<br>0 0,01<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Rin TF IGBT, #225 ( RBSOA ) LEG mE RS ewe ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE SVR Goff =2.4 Ω ,T vj =125°C a<br>350 300<br>IC, Modul Tvj = 25°C<br>IC, Chip 270 Tvj = 125°C<br>ETT) eae / /<br>300<br>240<br>250 TTC) ERE fe<br>210<br>Seeeeeeee<br>180<br>200 eee<br>150<br>PEE COCOA<br>150<br>EE) pepper<br>120<br>Tey) 90 eee<br>100<br>60<br>50<br>COPPA EA<br>30<br>Pe EERE AREER:<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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IGBT-模块 IGBT-modules 

## FS150R12KE3 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon Ny Ω ,V CE =600V IF = 180A, V CE = 600 V<br>20 20<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>18 18<br>16 po e 16<br>14 14<br>12 eae 12 eee<br>10 ene ae ee ee 10<br>8 8<br>SOFA ptt te tt<br>6 6<br>4 4<br>2 2<br>0 0<br>0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
ZthJC =f (t)<br>1<br>Le<br>ZthJC : Diode<br>H— ccc<br>a|Foo<br>e l<br>| | el<br>P T<br>wall<br>EI | em UTE Ul<br>wnZan<br>0,1<br>ee ae eee<br>|PT| TTA TTTTT)<br>Yt TLA T oT TTTTTT<br>TATA TTTPETTITT<br>PALIN TET ETI ET<br>400)<br>i:    1    2    3    4<br>ri[K/W]:   0,00643    0,01931    0,17143   0,14283<br>τ i[s]:    0,0000119   0,002364   0,02601   0,06499<br>homo<br>0,01<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FS150R12KE3 

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## **接线图�/�circuit_diagram_headline** 

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## **封装尺寸�/�package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�MM approved�by:�RS 

date�of�publication:�2013-10-02 revision:�3.1 

7 

IGBT-模块 IGBT-modules 

## FS150R12KE3 

## **使用条件和条款** 

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## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fs150r12ke3bosa1/transistor-igbt-module-1-2kv-200a/dp/2726177)
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