# IGBT Module, Six Pack [Full Bridge], 100 A, 1.95 V, 600 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2839514/)

**URL**: https://novapart.co/products/FS100R17N3E4BOSA1/igbt-module-six-pack-full-bridge-100-a-195-v-600-w
**SKU**: FS100R17N3E4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €83.2500
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:1.7kV; Transist

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 600W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 100A |
| Power Dissipation Pd | 600W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Voltage V(Br)Ceo | 1.7kV |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector Emitter Saturation Voltage Vce(On) | 1.95V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839514/)

IGBT-Module IGBT-modules 

## FS100R17N3E4 

VCES = 1700V IC nom = 100A / ICRM = 200A 

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- CEsat 

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- Lötverbindungstechnik 

- Standardgehäuse 

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- CEsat 

- VCEsat 

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1 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS100R17N3E4 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

**IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS100R17N3E4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-11<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1700<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>600<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,95<br>2,35<br>2,45<br>2,30<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 4,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,20<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>9,00<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,29<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1700 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,91Ω<br>td on<br>0,20<br>0,22<br>0,23<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 100 A, VCE= 900 V<br>VGE= ±15 V<br>RGon= 0,91Ω<br>tr<br>0,03<br>0,04<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,91Ω<br>td off<br>0,51<br>0,61<br>0,64<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 100 A, VCE= 900 V<br>VGE= ±15 V<br>RGoff= 0,91Ω<br>tf<br>0,29<br>0,52<br>0,60<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 900 V, LS= 50 nH<br>VGE= ±15 V, di/dt = 3800 A/µs (Tvj= 150°C)<br>RGon= 0,91Ω<br>Eon<br>12,0<br>19,0<br>21,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 900 V, LS= 50 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 0,91Ω<br>Eoff<br>18,0<br>29,0<br>33,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 1000 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>450<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,25<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,068<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS100R17N3E4 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1700|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1800<br>1750<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,90<br>1,95|2,20|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||110<br>120<br>125||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 3800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||19,0<br>36,0<br>40,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3800 A/µs (Tvj=150°C)<br>VR= 900 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||10,0<br>20,0<br>23,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,40|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,27||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�AS date�of�publication:�2013-11-11 approved�by:�RS revision:�2.0 

3 

IGBT-Module IGBT-modules 

## FS100R17N3E4 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||3,4<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|28<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,80||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||300||g|



4 

## IGBT-Module IGBT-modules Technische Information FS100R17N3E4 / Technical Information 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>200 200<br>Tvj = 25°C VGE = 20V<br>180 Tvj = 125°C 180 VGE = 15V<br>EF Tvj = 150°C LDU) P VGE = 12V ee<br>VGE = 10V<br>160 160 VGE = 9V<br>VGE = 8V<br>ee ee = TOA Ce<br>140 pp A 140 P e<br>pL ve E e<br>120 120<br>100 100<br>pit tee Lee<br>80 80<br>60 60<br>ee ee eeee<br>40 [ e 40 [i -<br>ee ee eo<br>20 20<br>pa | La<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon +=091 Ω ,R Goff =091 Ω ,V CE =900V<br>200 60<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 F Tvj = 125°C y a Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>50 Eoff, Tvj = 150°C<br>eel ;<br>160<br>pt | VA le,<br>140<br>40<br>| | Ae ey<br>120<br>pt / we “ 5 : /<br>100 30<br>et | | vA: ifYe<br>80 | | ee ane,<br>pt 7 /<br>20 y A<br>60<br>pt} TAT ae<br>40<br>pi | ye} tt 10 ar<br>20<br>et LAT Pe<br>0 0<br>ube | | | | ATL<br>5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-Module IGBT-modules 

## FS100R17N3E4 

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switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =100A,V CE =900V<br>50 1<br>Eon, Tvj = 125°C 1 ZthJC : IGBT a<br>45 | Eoff, Tvj = 125°C fF} ff | rreeH— FEE rHH<br>EEonoff, T, Tvjvj = 150°C = 150°C aa  e e le<br>40 — — aee<br>{i t<br>35<br>AC<br>0,1<br>tt ttae I PC e m Cll<br>30 L 4+ | a OP ee ee ee<br>=> oe a 2<br>25<br>+S — a a 20<br>20 potea Pere]—Ft ft} P tTY TAT MI TT<br>0,01<br>15 pri tet ty} | SR [rt] lh ee<br>10 Pf of fof pt ff a eeee eee<br>i:    1    2    3    4<br>5 CECE E r τ ii[K/W]:   [s]:    A 0,015   0,01    0,0825   0,02    0,08   0,05   0,0725   0,1<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 0,001 0,01 0,1 1<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =0.91 Ω ,T vj =150°C<br>250 200<br>IC, Modul Tvj = 25°C<br>IC, Chip 180 | Tvj = 125°C J<br>SL | Tvj = 150°C |<br>200 160<br>140<br>150 120<br>Pt Tt dei?<br>100<br>100 80<br>60<br>50 40<br>20<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FS100R17N3E4 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon ay Ω ,V CE =900V IF = 100A, V CE = 900 V<br>40 40<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>35 Ef 35 Ed<br>30 30<br>25 ee 25 eee<br>pL eera a beaie<br>20 20<br>Loe<br>15 15<br>ti Ly) Lee REE<br>10 lyt 10<br>ttt ete} LEE EET<br>ALLE<br>5 5<br>TET EE) LEEEE ELE<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 6 7 8 9<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>fa ZthJC : Diode ee [=— Rtyp —=——=———<br> a [J p<br>a ee es s e<br>a es ee<br>ELTALTH EP 10000 Xp<br>Va ee<br>0,1 2VA a<br>ee te eee ee Nee ee eee<br>7a ee ee aN\ eee<br>Pt TAM PTT 1000 ————_————<br>A es ee ec<br>i:    1    2    3    4<br>ri[K/W]:   0,024   0,132   0,128   0,116<br>A l τ i[s]:    0,01    0,02    p 0,05    0,1    a<br>0,01 COO 100 Pt [ete]<br>0,001 0,01 0,1 1 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS100R17N3E4 

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Schaltplan�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>


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## **Vorläufige�Daten Preliminary�Data** 

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J<br>**----- End of picture text -----**<br>


## **Gehäuseabmessungen�/�package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�AS approved�by:�RS 

date�of�publication:�2013-11-11 revision:�2.0 

8 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS100R17N3E4 

## **Nutzungsbedingungen** 

application. 

9 



## Links

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- [Supplier page](https://es.farnell.com/infineon/fs100r17n3e4bosa1/igbt-module-n-ch-1-7kv-100a/dp/2839514)
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