# IGBT Module, Six Pack [Full Bridge], 100 A, 1.75 V, 515 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726175/)

**URL**: https://novapart.co/products/FS100R12KT4GBOSA1/igbt-module-six-pack-full-bridge-100-a-175-v-515-w
**SKU**: FS100R12KT4GBOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €65.4400
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(br)ceo:1.2kV; Tra

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 515W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 100A |
| Power Dissipation Pd | 515W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726175/)

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FS100R12KT4G 

**==> picture [86 x 38] intentionally omitted <==**

EconoPACK™3�Modul��mit�Trench/Feldstopp�IGBT4�und�Emitter�Controlled4�Diode� EconoPACK™3�module��with�trench/fieldstop�IGBT4�and�Emitter�Controlled4�diode� 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

**初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>FS100R12KT4G<br>IGBT-模块<br>IGBT-modules||
|---|---|
|EconoPACK™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode<br>EconoPACK™3modulewithtrench/fieldstopIGBT4andEmitterControlled4diode<br>preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>515<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,20<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 4,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,30<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,27<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,115<br>0,13<br>0,135<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,025<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>td off<br>0,37<br>0,45<br>0,48<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>tf<br>0,06<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 3700 A/µs (Tvj= 150°C)<br>RGon= 1,6Ω<br>Eon<br>4,00<br>6,50<br>7,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 1,6Ω<br>Eoff<br>5,50<br>8,50<br>9,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>360<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,29<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,085<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FS100R12KT4G 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|100|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1550<br>1500|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||150<br>160<br>165||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 100 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||9,60<br>17,0<br>19,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||4,10<br>7,00<br>8,00||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,50|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,145||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�CM date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0 

2 

IGBT-模块 IGBT-modules 

## FS100R12KT4G 

## **初步数据** 

|#tk | Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>AI203|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 200<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009|K/W|
|杂散电感,模块||LsCE||21|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>1,80<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|重量<br>Weight||G||300|g|



3 

IGBT-模块 IGBT-modules 

## FS100R12KT4G 

## **初步数据** 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>200 a | y v 200 es<br>Tvj = 25°C VGE = 19V<br>180 Tvj = 125°C 180 F VGE = 17V oR<br>E Tvj = 150°C OL) VGE = 15V |<br>VGE = 13V<br>160 e— 160 VGE = 11V<br>|} fie |} i7eeane<br>VGE = 9V<br>e e<br>140 140<br>ee [Ls /ee<br>120 120<br>An e cee<br>100 100<br>80 80<br>ee ee ee ee<br>60 eee 60 oan<br>eeee/ eeee‘77<br>40 40<br>ee<br>20 20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =16 Ω ,R Goff =16 Ω ,V CE =600V<br>200 20<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 Tvj = 125°C 18 Eoff, Tvj = 125°C<br>EF Tvj = 150°C Lo PO Eon, Tvj = 150°C E<br>Eoff, Tvj = 150°C<br>160 16<br>o e s ee ee E f eo<br>140 S R R) 14<br>Ane ee e ee<br>See) eens<br>120 PLETE) 12 LLL eee<br>100 10<br>80 pt |A 8 ee<br>RRA eee Zee<br>60 6<br>40 iBe Aneee 4 eeeane<br>20 2<br>poet<br>0 0<br>TT T P<br>5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

IGBT-模块 IGBT-modules 

## FS100R12KT4G 

## **初步数据** 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =100A,V CE =600V<br>25 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C H— SO E ee<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>20 Ee a i f ld]. a ETa a ee | oe | | th|<br>a ee een<br>15<br>oa ed eg 0,1 ST T T<br>EAR od<br>10 “|- wa PTDeey [Tee] ee |<br>3 |<br>A<br>yt|<br>5<br>A A<br>i:    1    2    3    4<br>ri[K/W]:   0,0174   0,0957   0,0928   0,0841<br>Yi L$ τ i[s]:    0,01    0,02    0,05    0,1<br>0 0,01<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Rie22LF K IGBT, #3825 ( RBSOA ) LEG mE RB Fes ( BB)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE SVR Goff =1.6 Ω ,T vj =150°C a<br>250 200<br>IC, Modul Tvj = 25°C<br>IC, Chip 180 Tvj = 125°C<br>= F Tvj = 150°C e<br>200 160<br>140<br>150 120<br>100<br>100 80<br>60<br>50 40 af.<br>VA<br>20<br>p er<br>0 0<br>| || Et<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FS100R12KT4G 

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初步数据<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon 6 Ω ,V CE =600V IF = OO A.V CE = 600 V<br>12 10 Ss<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>10<br>8<br>8<br>6<br>are Reet<br>6 Z|<br>ye 4 “EOE<br>4<br>- ye<br>2<br>2<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>transientRASTAthermal— iS, impedancees Diode, Inverter RBEABARNTC-Thermistor-temperatureBH BER characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 100000<br>a —E——__—__—__—_——<br>e ZthJC : Diode T — R — typ —————<br>a [J p<br>PT TTT EET TTT es s e<br>eI es ee<br>PLATT Tet EIT TT ry.<br>LT ATI LTTE LEHI 10000 aS<br>/ 4 ———————— =<br>UAL SS<br>0,1<br>/ | SSS=<br>SSS PN<br>PATIaPEAT CTTT| || 1000 ————_————aNNX eee<br>a | a<br>a a ||| ee<br>i:    1    2    3    4<br>ri[K/W]:   0,03   0,165   0,16   0,145<br>τ i[s]:    0,01   0,02    0,05   0,1    Pe<br>0,01 Toco 100 Pt<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FS100R12KT4G 

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接线图�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>


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## **初步数据 Preliminary�Data** 

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Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�CM date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0 

7 

IGBT-模块 IGBT-modules 

## FS100R12KT4G 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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8 



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> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.