# IGBT Module, Six Pack [Full Bridge], 100 A, 1.7 V, 480 W, 125 °C, Module

![Product image](https://novapart.co/image/farnell:2709974/)

**URL**: https://novapart.co/products/FS100R12KT3BOSA1/igbt-module-six-pack-full-bridge-100-a-17-v-480-w
**SKU**: FS100R12KT3BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €79.4300
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:480W; Collector Emitter Voltage V(br)ceo:1.2kV; Transisto

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK 3 |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 480W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 100A |
| Power Dissipation Pd | 480W |
| Transistor Case Style | Module |
| Operating Temperature Max | 125°C |
| Junction Temperature Tj Max | 125°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Saturation Voltage Vce(On) | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709974/)

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FS100R12KT3 

**==> picture [86 x 38] intentionally omitted <==**

EconoPACK™3�Modul�mit�schnellem�Trench/Feldstop�IGBT3�und�High�Efficiency�Diode� EconoPACK™3�with�fast�trench/fieldstop�IGBT3�and�Emitter�Controlled�High�Efficiency�diode� 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

**初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>FS100R12KT3<br>IGBT-模块<br>IGBT-modules||
|---|---|
|EconoPACK™3ModulmitschnellemTrench/FeldstopIGBT3undHighEfficiencyDiode<br>EconoPACK™3withfasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode<br>preparedby:MM<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>100<br>140<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>480<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,70<br>1,90<br>2,15<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 4,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,90<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>7,10<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,30<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 3,9Ω<br>td on<br>0,26<br>0,29<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 3,9Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 3,9Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 3,9Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 70 nH<br>VGE= ±15 V<br>RGon= 3,9Ω<br>Eon<br>10,0<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 70 nH<br>VGE= ±15 V<br>RGoff= 3,9Ω<br>Eoff<br>10,0<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>400<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,26<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,09<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C||



1 

## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FS100R12KT3 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|100|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|1950|||A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,65<br>1,65|2,15|V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 2600 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||120<br>140||A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 100 A, - diF/dt = 2600 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||10,0<br>20,0||µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 2600 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||5,00<br>9,00||mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,48|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,14||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�MM date�of�publication:�2013-10-03 approved�by:�RS revision:�2.1 

2 

IGBT-模块 IGBT-modules 

## FS100R12KT3 

## **初步数据** 

|#tk | Module||||||
|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~<br> ~~ee ~~<br>BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>AI203|kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0|mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 225<br>typ.<br>max.<br>~~ee~~|mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009|K/W|
|杂散电感,模块||LsCE||21|nH|
|模块引线电阻,端子-芯片<br>储存温度<br>模块安装的安装扭距<br>terminals ~~- chip~~<br>~~Storage temperature~~<br>Mounting torque for modul mounting|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>~~ee ~~<br>$ReeMSARSEAR AVAY Oy EA ET<br>Screw M5<br>- Mounting according to valid application note|RCC'+EE'<br>1,80<br>Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~tt ff~~<br> ~~ee ee~~|||mΩ<br>°C<br>Nm|
|重量<br>Weight||G||300|g|



3 

IGBT-模块 IGBT-modules 

## FS100R12KT3 

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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>200 a | 7 200 es | V } :<br>Tvj = 25°C VGE = 19V<br>180 Tvj = 125°C 180 VGE = 17V<br>(ee ee | VGE = 15V L ike |<br>VGE = 13V<br>160 160 VGE = 11V<br>VGE = 9V<br>e efs C f /<br>140 140<br>ee ed<br>120 120<br>Pt , 7; : Yo<br>100 100<br>Pt | AAify | eepe<br>80 ee 80 J<br>60 ee ee/ / , Ane eee 60 7Ae'/i; J<br>ee<br>40 40<br>20 20<br>PPYET LP [pr]<br>PLA<br>0 0<br>| |} OLA<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feFStt IGBT, HaseS (FAA) FFHIRE IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =39 Ω ,R Goff =39 Ω ,V CE =600V<br>200 30<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 Tvj = 125°C Eoff, Tvj = 125°C<br>25<br>160<br>ee ee ——<br>140<br>Pf | tt fed<br>20<br>120<br>100 15<br>pt 7 ‘<br>| pe or<br>80<br>pt | EERE ZE<br>10<br>60<br>40<br>A an<br>5<br>Pee a<br>20<br>Beane<br>0 0<br>5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175 200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


4 

IGBT-模块 IGBT-modules 

## FS100R12KT3 

## **初步数据** 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =100A,V CE =600V<br>30 a 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C WY ee eee<br>TT H— S O E ee<br>25 EI |) LY a To or nr<br>a a I<br>Vv1 a a ee ||<br>20<br>pa yi Yee<br>Ler EEL CIMT<br>15 0,1<br>PTTy<br>10 BZA | Va RRaaae PE | Et TTTAPETTT<br>5 Py yy ply | TAwa TEii|!\anan CINE INI<br>i:    1    2    3    4<br>ri[K/W]:   0,00493    0,01501    0,13088   0,10919<br>τ i[s]:    0,0000119   0,002364   0,02601   0,06499<br>boom oo l<br>0 TLL [EELLL] 0,01 4) ||<br>0 4 8 12 16 20 24 28 32 36 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RiwZSLiF K IGBT, aes ( RBSOA ) LEG mE RS ewe ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE SVR Goff =3.9 Ω ,T vj =125°C a<br>250 200<br>IC, Modul Tvj = 25°C<br>IC, Chip 180 Tvj = 125°C<br>= Ej tee<br>200 160<br>140<br>aaa BEREREEEP Aa<br>150 120<br>100<br>cae COBERR ee<br>100 80<br>60<br>50 40<br>20<br>BEREZARREEraw<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## FS100R12KT3 

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初步数据<br>**----- End of picture text -----**<br>


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Erec =f(I F) Erec =f(R G)<br>RGon So Ω ,V CE =600V IF = 100A, V CE = 600 V<br>14 12<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>12 —— | | — — |<br>10<br>10<br>8<br>8<br>CORTE} PSSSEEEED<br>6<br>6 EEVGnnEe es<br>4<br>4<br>2<br>2 ATEPeer LEE ETL EL<br>0 0<br>0 25 50 75 100 125 150 175 200 0 4 8 12 16 20 24 28 32 36<br>IF [A] RG [ Ω ]<br>AA RE ES<br>transient thermal impedance Diode, Inverter<br>ZthJC =f (t)<br>1<br>Le<br>ZthJC : Diode<br>H— ccc<br>a|Foo<br>a A eel l<br>PLAE TIE E PTT<br>FATA TET<br>0,1<br>YtPT TAT [eT] OTTT)<br>A<br>||<br>aa<br>PPE i:    1    2    ETE 3    4    ET I<br>ri[K/W]:   0,00908    0,02726    0,24202   0,20164<br>τ i[s]:    0,0000119   0,002364   0,02601   0,06499<br>homo<br>0,01<br>0,001 0,01 0,1 1 10<br>t [s]<br>E [mJ] E [mJ]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


6 

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FS100R12KT3 

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接线图�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>


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## **初步数据 Preliminary�Data** 

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## **封装尺寸�/�package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�MM approved�by:�RS 

date�of�publication:�2013-10-03 revision:�2.1 

7 

IGBT-模块 IGBT-modules 

## FS100R12KT3 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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8 



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