# IGBT Module, Six Pack [Full Bridge], 100 A, 1.55 V, 335 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3294634/)

**URL**: https://novapart.co/products/FS100R07N2E4BOSA1/igbt-module-six-pack-full-bridge-100-a-155-v-335-w
**SKU**: FS100R07N2E4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €72.8700
**Stock**: 10+
**Lead Time**: 134 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 28Pins |
| Product Range | EconoPACK 2 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 335W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | Six N Channel |
| Dc Collector Current | 100A |
| Power Dissipation Pd | 335W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Voltage V(Br)Ceo | 650V |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Saturation Voltage Vce(On) | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3294634/)

IGBT-Module IGBT-modules 

## FS100R07N2E4 

VCES = 650V 

IC nom = 100A / ICRM = 200A 

- Motorantriebe 

   - 

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- Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom 

- 

- T 

   - 

   - High Short Circuit Capability, Self Limiting Short 

   - 

   - T 

- 

- Kupferbodenplatte 

- Lötverbindungstechnik 

- Standardgehäuse 

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- 

- 

- 

1 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS100R07N2E4 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

**IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FS100R07N2E4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-06<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 70°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>335<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,00<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,20<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,19<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>td on<br>0,07<br>0,08<br>0,08<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>tr<br>0,02<br>0,02<br>0,02<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>td off<br>0,26<br>0,29<br>0,30<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>tf<br>0,07<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 5100 A/µs (Tvj= 150°C)<br>RGon= 3,3Ω<br>Eon<br>0,33<br>0,77<br>0,88<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 3,3Ω<br>Eoff<br>3,50<br>4,70<br>4,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>480<br>380<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤10 µs,<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,45<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,19<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS100R07N2E4 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1100<br>990<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||130<br>150<br>160||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||4,00<br>8,00<br>10,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,30<br>2,25<br>2,75||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,80|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,33||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�AS date�of�publication:�2013-11-06 approved�by:�RS revision:�2.0 

3 

IGBT-Module IGBT-modules 

## FS100R07N2E4 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,02||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|19<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,80||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||180||g|



4 

IGBT-Module IGBT-modules 

## FS100R07N2E4 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE ts Vv Tvj = i50°C<br>200 Tvj |  = 25°C / ” 200 es VGE = 19V | 7 y<br>180 Tvj = 125°C 180 VGE = 17V<br>E Tvj = 150°C WI) F VGE = 15V ue<br>VGE = 13V<br>160 es 160 VGE = 11V<br>ee | yA<br>VGE = 9V i;<br>140 Pe )“aed 140 E es L[! ; a L | | |<br>es<br>120 120<br>re eeee e eee) Ce ee<br>100 100<br>80 80<br>A eeeae<br>60 ee 60 ee e<br>ee a 7 )<br>40 40<br>20 20<br>ee eee eeee<br>Poy LK<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE Sov VGE LNeVR Gon £33 Ω ,R Goff =3.3 Ω ,V CE =300V<br>200 8<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 Tvj = 125°C F Eoff, Tvj = 125°C OS<br>Ee T [ILLLYA] vj = 150°C L; 7 Eon, Tvj = 150°C a<br>Eoff, Tvj = 150°C<br>160 ee | ar<br>6<br>2<br>140<br>eee e e e eee<br>PPP ee 5 Poteee| ttPeee<br>120 PRfi eeenA eee<br>100 4<br>TTT Fee<br>80<br>|PA} 3 Eee<br>60<br>Pt} 7 P| tr Tt |<br>2<br>CA AEE<br>40<br>1<br>20<br>>ee 4AyAe ee poeee| oe<br>0 0<br>5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-Module IGBT-modules 

## FS100R07N2E4 

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**----- Start of picture text -----**<br>
E switching on G losses off IGBT, G)  Inverter (typical) transient ZthJC  thermal impedance IGBT, Inverter<br>VGE TNSV.1 C S100A,V. CE =300V "0<br>7 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C<br>6 Eon, Tvj = 150°C<br>| Eoff, Tvj = 150°C +--+ EERIE Se<br>t r Bzat<br>5<br>eb beeck AAA Te<br>0,1<br>cooseeeeeereeeo | L O<br>4 PCCP)Py | | ty ty] heer] YTeS| Vie Tt Tt 6 TT oT TT<br>3<br>ytd tee]te SATa eeTE ee |<br>i a a a<br>0,01<br>2<br>CLLLl | aeeaee ee |<br>1 See 2eeeeeeenee se e i:    1    scar 2    3    4<br>ri[K/W]:   0,027   0,1485   0,144   0,1305<br>TTP Pee PETIT τ i[s]:    0,01    0,02    Ti 0,05    0,1    l<br>PEPE cooo| l<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA)<br>IF F)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) one characteristic of Diode, Inverter (typical)<br>IC CE)<br>VGE - ee V,R Goff +=3.3 Ω ,T vj =150°C<br>220 Ld 200 7<br>IC, Modul Tvj = 25°C<br>200 a I C , Chip a 180 Tvj = 125°C<br>Tvj = 150°C<br>180 po eS<br>160<br>160<br>140<br>140<br>120<br>120 PoE tT | |<br>100<br>100<br>pp ae a<br>80<br>80<br>60<br>60<br>40<br>40<br>Py pf | as |<br>20 20<br>ee<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,4 0,8 1,2 1,6 2,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FS100R07N2E4 

**==> picture [485 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =3.3 Ω ,V CE =300V IF =100A,V CE =300V<br>4,0 4,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>3,6 E Erec, Tvj = 150°C J}| 3,6 Erec, Tvj = 150°C<br>3,2 3,2<br>2,8 e e 2,8 eee<br>a A! :<br>2,4 ee 2,4 eeee<br>Aree<br>2,0 2,0<br>Pir EE EE} ENS TE]<br>1,6 1,6<br>Pee EEE EPLE P ORERR<br>1,2 1,2<br>a es<br>0,8 0,8<br>0,4 Ok 0,4<br>0,0 0,0<br>0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


**==> picture [487 x 280] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZthJC =f (t) R=f(T)<br>1 100000<br>i _— ZthJC : Diode et a ({— 1 Rtyp aSSE See  SEES<br>Ra n e j—— 77 TT hv<br>rT TT eT pot ft tT ft ft tT tT pt te pe<br>a | P| | tT | | | tt PT tT | TT<br>pone ene fod SERRE<br>0,1 ae a 10000 eS<br>pf zee ee eee ee<br>a a<br>YT ZT Ti TT p | KP tT ft tt<br>Yr ATT TT TT Pp [| [TNT tt te et et<br>PAL TD PE Ee ENEe eee<br>PTE TTI TIE TT) SSS<br>0,01 ee 1000<br>Pt a<br>ee GS<br>PTrT TTT ETT Neeee<br>Pt tT TT TP| T i:    1    2    3    TT 4    potpt ffft tT fftf ft ffftp ftRKBA tT<br>ri[K/W]:   0,048   0,264   0,256   0,232<br>PT TT τ i[s]:    0,01    0,02    0,05    P 0,1    Pt TT TT TT TT TT AAT<br>0,001 AME Eiri } = 100  LEEEE<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FS100R07N2E4 

## **Schaltplan�/�circuit_diagram_headline** 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

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**----- Start of picture text -----**<br>
J<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
In fin e o n<br>**----- End of picture text -----**<br>


prepared�by:�AS date�of�publication:�2013-11-06 approved�by:�RS revision:�2.0 

8 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FS100R07N2E4 

## **Nutzungsbedingungen** 

application. 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/FS100R07N2E4BOSA1/igbt-module-six-pack-full-bridge-100-a-155-v-335-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fs100r07n2e4bosa1/igbt-mod-6-n-ch-650v-100a-335w/dp/3294634)
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