# Power MOSFET, N Channel, 100 V, 1.7 A, 0.35 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2453450/)

**URL**: https://novapart.co/products/FQT7N10TF/power-mosfet-n-channel-100-v-17-a-035-ohm-sot-223
**SKU**: FQT7N10TF
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2830
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (17-Jan-2022) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.7A |
| Drain Source On State Resistance | 0.35ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2453450/)

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March 2013<br>**----- End of picture text -----**<br>


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FQT7N10<br>N-Channel QFET [®]  MOSFET<br>100 V, 1.7 A, 350 m Ω<br>**----- End of picture text -----**<br>


## **Description** 

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Features<br>**----- End of picture text -----**<br>


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This N-Channel enhancement mode power MOSFET  • 1.7 A, 100 V, RDS(on)=350 mΩ(Max.) @VGS=10 V, ID=0.85 A<br>is produced using Fairchild Semiconductor [®] ’s  • Low Gate Charge (Typ. 5.8 nC)<br>proprietary planar stripe and DMOS technology. This<br>advanced MOSFET technology has been especially  • Low Crss (Typ. 10 pF)<br>tailored to reduce on-state resistance, and to provide  • 100% Avalanche Tested<br>superior switching performance and high avalanche<br>energy strength. These devices are suitable for<br>switched mode power supplies, audio amplifier, DC<br>motor control, and variable switching power<br>applications.<br>D<br>!<br>D<br>"<br>! "<br>S G ! ""<br>G SOT-223 !<br>S<br>Absolute Maximum Ratings    TC = 25°C unless otherwise noted<br>Symbol a Parameter FQT7N10 Unit<br>VDSS Drain-Source Voltage 100 V<br>ID Drain Current  - Continuous (TC = 25°C) 1.7 A<br>- Continuous (TC = 70°C) 1.36 A<br>IDM Drain Current - Pulsed (Note 1) 6.8 A<br>VGSS Gate-Source Voltage ± 25 V<br>EAS Single Pulsed Avalanche Energy (Note 2) 50 mJ<br>IAR Avalanche Current (Note 1) 1.7 A<br>EAR Repetitive Avalanche Energy (Note 1) 0.2 mJ<br>dv/dt P Peak Diode Recovery dv/dt f (Note 3) 6.0 V/ns<br>PD Power Dissipation (TC = 25°C) 2.0 W<br>- Derate above 25°C 0.016 W/°C<br>ee<br>TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C<br>Maximum lead temperature for soldering purposes,<br>TL 1/8" from case for 5 seconds 300 °C<br>Thermal Characteristics<br>Symbol Parameter Typ Max Unit<br>RθJA Thermal Resistance, Junction-to-Ambient * -- 62.5 °C / W<br>* When mounted on the minimum pad size recommended (PCB Mount)<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

©2001 Fairchild Semiconductor Corporation FQT7N10 Rev. C0 

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FQT7N10<br>N<br>-Channel MOSFET<br>**----- End of picture text -----**<br>


|**Electrical Characteristics**TC= 25°C|**Electrical Characteristics**TC= 25°C|unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**Off Characteristics**|||||||
|BVDSS|Drain-Source Breakdown Voltage|VGS= 0 V, ID= 250µA|100|--|--|V|
|∆BVDSS<br>/∆TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250µA, Referenced to 25°C|--|0.1|--|V/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 100 V, VGS= 0 V|--|--|1|µA|
|||VDS= 80 V, TC= 125°C|--|--|10|µA|
|IGSSF|Gate-Body Leakage Current, Forward|VGS= 25 V, VDS= 0 V|--|--|100|nA|
|IGSSR|Gate-Body Leakage Current, Reverse|VGS= -25 V, VDS= 0 V|--|--|-100|nA|
|**On Characteristics**|||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250µA|2.0|--|4.0|V|
|RDS(on)|Static Drain-Source<br>On-Resistance|VGS= 10 V, ID= 0.85 A|--|0.28|0.35|Ω|
|gFS|Forward Transconductance|(Note 4)<br>VDS= 40 V, ID= 0.85 A|--|1.85|--|S|
|**Dynamic Characteristics**|||||||
|Ciss|Input Capacitance|VDS= 25 V, VGS= 0 V,<br>f = 1.0 MHz|--|190|250|pF|
|Coss|Output Capacitance||--|60|75|pF|
|Crss|Reverse Transfer Capacitance||--|10|13|pF|
|**Switching Characteristics**|||||||
|td(on)|Turn-On Delay Time|(Note 4, 5)<br>VDD= 50 V, ID= 7.3 A,<br>RG= 25Ω|--|7|25|ns|
|tr|Turn-On Rise Time||--|24|60|ns|
|td(off)|Turn-Off Delay Time||--|13|35|ns|
|tf|Turn-Off Fall Time||--|19|50|ns|
|Qg|Total Gate Charge|(Note 4, 5)<br>VDS= 80 V, ID= 7.3 A,<br>VGS= 10 V|--|5.8|7.5|nC|
|Qgs|Gate-Source Charge||--|1.4|--|nC|
|Qgd|Gate-Drain Charge||--|2.5|--|nC|
|**Drain-Source Diode Characteristics and Maximum Ratings**|||||||
|IS|Maximum Continuous Drain-Source Diode Forward Current||--|--|1.7|A|
|ISM|Maximum Pulsed Drain-Source Diode Forward Current||--|--|6.8|A|
|VSD|Drain-Source Diode Forward Voltage|VGS= 0 V, IS= 1.7 A|--|--|1.5|V|
|trr|Reverse Recovery Time|(Note 4)<br>VGS= 0 V, IS= 7.3 A,<br>dIF/ dt = 100 A/µs|--|70|--|ns|
|Qrr|Reverse Recovery Charge||--|150|--|nC|



## **Notes:** 

1. Repetitive Rating : Pulse width limited by maximum junction temperature 

2. L = 26mH, IAS = 1.7A, VDD = 25V, RG = 25 Ω, Starting  TJ = 25°C 

3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting  TJ = 25°C 

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 

5. Essentially independent of operating temperature 

www.fairchildsemi.com 

©2001 Fairchild Semiconductor Corporation FQT7N10 Rev. C0 

## **Typical Characteristics** 

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Top :       15.0 V                VGS<br>            10.0 V<br>              8.0 V<br>              7.0 V<br>              6.0 V<br>              5.5 V<br>              5.0 V<br>Bottom :    4.5 V<br>150℃<br>100<br>100<br>25℃<br>-55℃<br>※ Notes :<br>1. 250μ s Pulse Test ※ Notes :<br>2. TC = 25℃ 1. V2. 250DS = 40Vμ s Pulse Test<br>10-1 100 101 10-1 2 4 6 8 10<br>VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage  [V]<br>Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics<br>1.4<br>1.2<br>1.0<br>VGS = 10V<br>0.8 100<br>0.6 VGS = 20V<br>0.4<br>150℃ 25℃<br>※ Notes :<br>0.2 ※ Note : TJ = 25℃  2. 250 1. VGS = 0Vμ s Pulse Test<br>0.0 0 3 6 9 12 15 18 10-10.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>ID , Drain Current  [A] VSD , Source-Drain Voltage  [V]<br>Figure 3. On-Resistance Variation  vs. Figure 4. Body Diode Forward Voltage<br>Drain Current and Gate Voltage Variation vs. Source Current<br>and Temperature<br>500 12<br>Ciss = Cgs + Cgd (Cds = shorted)<br>Coss = Cds + Cgd<br>400 Crss = Cgd 10 VDS = 50V<br>VDS = 80V<br>8<br>300 ※ Notes :<br>Ciss 2. f = 1 MHz1. VGS = 0 V 6<br>200 Coss<br>4<br>100 Crss 2<br>※ Note : ID = 7.3 A<br>010-1 100 101 0 0 1 2 3 4 5 6 7<br>VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]<br>, Drain Current [A]ID  , Drain Current  [A]ID<br>],<br>Ω<br>   [<br>DS(on)<br>R<br> , Reverse Drain Current  [A]<br>Drain-Source On-Resistance IDR<br>Capacitance [pF]<br>, Gate-Source Voltage [V]<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance Characteristics** 

**Figure 6. Gate  Charge Characteristics** 

www.fairchildsemi.com 

©2001 Fairchild Semiconductor Corporation FQT7N10 Rev. C0 

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Typical Characteristics      (Continued)<br>1.2 3.0<br>2.5<br>1.1<br>2.0<br>1.0 1.5<br>1.0<br>0.9 ※ Notes :<br>2. I1. VDGS = 250  = 0 Vμ A 0.5 ※2. I1. V Notes :DGS = 0.85 A = 10 V<br>0.8 0.0<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]<br>Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation<br>vs. Temperature vs. Temperature<br>2.0<br>Operation in This Area<br>101 is Limited by R DS(on)<br>1.6<br>100 µs<br>1 ms<br>100 100 ms10 ms 1.2<br>DC<br>0.8<br>10-1<br>※2. T1. T3. Single Pulse Notes :CJ = 150  = 25 oCoC 0.4<br>10-210-1 100 101 102 0.025 50 75 100 125 150<br>VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]<br>Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current<br>vs.  Case Temperature<br>1 0 2<br>D = 0 .5<br>1 0 1 0 .2 ※   1. Z N otes  :θ J C [(t) =  6 2.5 ] [℃] [/W  M a x.]<br>0 .1    3. T2. D u ty  F ac to r, D = tJ M  - T C  =  P D M  * Z1 θ/t 2J C [(t)]<br>0 .0 5<br>0 .0 2<br>1 0 0 0 .0 1 PDM<br>s in g le  p u ls e t1 t2<br>1 0 -11 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 2 1 0 3<br>t 1 , S qu a re W a ve  P ulse  D u ration  [se c]<br>Figure 11. Transient Thermal Response Curve<br>, (Normalized)  , (Normalized)<br>DSS DS(ON)<br>BV R<br>Drain-Source On-Resistance<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]ID , Drain Current [A]ID<br>(t), T h e rm al R e sp o ns eJC<br>Z θ<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

©2001 Fairchild Semiconductor Corporation FQT7N10 Rev. C0 

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 Gate Charge Test Circuit & Waveform<br>VGS<br>Same Type<br>50KΩ as DUT Qg<br>12V 200nF 300nF 10V<br>VGS VDS Qgs Qgd<br>DUT<br>3mA<br>Charge<br> Resistive Switching Test Circuit & Waveforms<br>VDS RL VDS 90%<br>VGS VDD<br>RG<br>10%<br>DUT VGS<br>10V<br>td(on) tr td(off) tf<br>t on t off<br> Unclamped Inductive Switching Test Circuit & Waveforms<br>VDS L EAS = ----12 L IAS2 --------------------BVBVDSSDSS- VDD<br>I D BVDSSIAS<br>RG VDD ID (t)<br>10V DUT VDD VDS (t)<br>t p t p Time<br>FQT7N10<br>N<br>-Channel MOSFET<br>**----- End of picture text -----**<br>


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©2001 Fairchild Semiconductor Corporation<br>FQT7N10 Rev. C0<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

## **Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

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DUT +<br>VDS<br>_<br>I SD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------Gate Pulse Period 10V<br>( Driver )<br>IFM , Body Diode Forward Current<br>I SD<br>( DUT ) di/dt<br>IRM<br>Body Diode Reverse Current<br>VDS<br>( DUT ) Body Diode Recovery dv/dt<br>VSD VDD<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

©2001 Fairchild Semiconductor Corporation FQT7N10 Rev. C0 

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Package Dimensions<br>**----- End of picture text -----**<br>


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SOT-223<br>3.00 ±0.10<br>MAX1.80<br>0.06 [+0.04] –0.02<br>2.30 TYP 0.70 ±0.10<br>+0.10<br>(0.95) 4.60 ±0.25 (0.95) 0.25 –0.05<br>6.50 ±0.20<br>0°~10°<br>0.08MAX 0.20<br>±<br>0.65<br>0.20<br>±<br>1.75<br>0.20 (0.60) 0.30<br>± ±<br>3.50  7.00<br>(0.60)<br>0.20<br>1.60 ± (0.46) (0.89)<br>**----- End of picture text -----**<br>


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©2001 Fairchild Semiconductor Corporation FQT7N10 Rev. C0 

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## **DISCLAIMER** 

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As used here in: 

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## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I64 

©2001 Fairchild Semiconductor Corporation FQT7N10 Rev. C0 

www.fairchildsemi.com 



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