# Power MOSFET, P Channel, 200 V, 670 mA, 2.06 ohm, SOT-223, Surface Mount ![Product image](https://novapart.co/image/farnell:2822543RL/) **URL**: https://novapart.co/products/FQT3P20TF/power-mosfet-p-channel-200-v-670-ma-206-ohm-sot **SKU**: FQT3P20TF **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.3360 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | Channel Type | P Channel | | Power Dissipation | 2.5W | | Drain Source On State Resistance | 2.06ohm | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2822543RL/) ## **FQT3P20** ## **P-Channel QFET[®] MOSFET** **-200 V, -0.67 A, 2.7 Ω** ## **Description** ## **Features** - -0.67 A, -200 V, RDS(on) = 2.7 Ω (Max.) @VGS = 10 V, ID = 0.335 A **==> picture [435 x 482] intentionally omitted <==** **----- Start of picture text -----**
This P-Channel enhancement mode power MOSFET is • Low Gate Charge ( Typ. 6.0 nC)
produced using ON Semiconductor’s proprietary • Low Crss ( Typ. 7.5 pF)
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
D
D
S
D
SOT-223
G
G D S
eS
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter FQT3P20TF Unit
VDSS Drain-Source Voltage -200 V
ID Drain Current - Continuous (TC = 25°C) -0.67 A
- Continuous (TC = 70°C) -0.53 A
IDM Drain Current - Pulsed (Note 1) -2.7 A
VGSS Gate-Source Voltage ± 30 V
EAS —— Single Pulsed Avalanche Energy (Note 2) 150 mJ
IAR Avalanche Current (Note 1) -0.67 A
EAR Repetitive Avalanche Energy (Note 1) 0.25 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns
PD Power Dissipation (TC = 25°C) 2.5 W
- Derate above 25°C 0.02 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 1/8" from case for 5 seconds 300 °C
Thermal Characteristics
Symbol Parameter FQT3P20TF Unit
er RθJA Thermal Resistance, Junction-to-Ambient 50 °C / W
**----- End of picture text -----**
Publication Order Number: FQT3P20/D ©2001 Semiconductor Components Industries, LLC. October-2017,Rev. 3 |**Package Marking and Ordering Information**
**Device Marking**
**Device**
**Package**
**Reel Size**
FQT3P20
FQT3P20TF
SOT-223
13"
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Device Marking**
**Device**
**Package**
**Reel Size**
FQT3P20
FQT3P20TF
SOT-223
13"
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Device Marking**
**Device**
**Package**
**Reel Size**
FQT3P20
FQT3P20TF
SOT-223
13"
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Device Marking**
**Device**
**Package**
**Reel Size**
FQT3P20
FQT3P20TF
SOT-223
13"
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Device Marking**
**Device**
**Package**
**Reel Size**
FQT3P20
FQT3P20TF
SOT-223
13"
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Device Marking**
**Device**
**Package**
**Reel Size**
FQT3P20
FQT3P20TF
SOT-223
13"
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Device Marking**
**Device**
**Package**
**Reel Size**
FQT3P20
FQT3P20TF
SOT-223
13"
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|||||| |---|---|---|---|---|---|---|---|---|---|---|---| |||**Device**|**Package**||**Reel Size**||**Tape Width**|||**Quantity**|| |||FQT3P20TF|SOT-223||13"||12 mm|||2500 units|| |||||unless otherwise noted.|||||||| |**Symbol**|**Parameter**|||**Test Conditions**|||**Min**|**Typ**|**Max**||**Unit**| ||||||||||||| |**Off Characteristics**|||||||||||| |BVDSS|Drain-Source Breakdown Voltage|||VGS= 0 V, ID= -250µA|||-200|--|--||V| |∆BVDSS/
∆TJ|Breakdown Voltage Temperature
Coefficient|||ID= -250µA, Referenced to 25°C|||--|-0.18|--||V/°C| |IDSS|Zero Gate Voltage Drain Current|||VDS= -200 V, VGS= 0 V|||--|--|-1||µA| |||||VDS= -160 V, TC= 125°C|||--|--|-10||µA| |IGSSF|Gate-Body Leakage Current, Forward|||VGS= -30 V, VDS= 0 V|||--|--|-100||nA| |IGSSR|Gate-Body Leakage Current, Reverse|||VGS= 30 V, VDS= 0 V|||--|--|100||nA| |**On Characteristics**|||||||||||| |VGS(th)|Gate Threshold Voltage|||VDS= VGS, ID= -250µA|||-3.0|--|-5.0||V| |RDS(on)|Static Drain-Source
On-Resistance|||VGS= -10 V, ID= -0.335 A|||--|2.06|2.7||Ω| |gFS|Forward Transconductance|||VDS= -40 V, ID= -0.335 A|||--|0.7|--||S| |**Dynamic Characteristics**|||||||||||| |Ciss|Input Capacitance|||VDS= -25 V, VGS= 0 V,
f = 1.0 MHz|||--|190|250||pF| |Coss|Output Capacitance||||||--|45|60||pF| |Crss|Reverse Transfer Capacitance||||||--|7.5|10||pF| |**Switching Characteristics**|||||||||||| |td(on)|Turn-On Delay Time|||(Note 4)
VDD= -100 V, ID= -2.8 A,
RG= 25Ω|||--|8.5|25||ns| |tr|Turn-On Rise Time||||||--|35|80||ns| |td(off)|Turn-Off Delay Time||||||--|12|35||ns| |tf|Turn-Off Fall Time||||||--|25|60||ns| |Qg|Total Gate Charge|||(Note 4)
VDS= -160 V, ID= -2.8 A,
VGS= -10 V|||--|6.0|8.0||nC| |Qgs|Gate-Source Charge||||||--|1.7|--||nC| |Qgd|Gate-Drain Charge||||||--|2.9|--||nC| |**Drain-Source Diode Characteristics and Maximum Ratings**|||||||||||| |IS|Maximum Continuous Drain-Source Diode Forward Current||||||--|--|-0.67||A| |ISM|Maximum Pulsed Drain-Source Diode Forward Current||||||--|--|-2.7||A| |VSD|Drain-Source Diode Forward Voltage|||VGS= 0 V, IS= -0.67 A|||--|--|-5.0||V| |trr|Reverse RecoveryTime|||VGS= 0 V, IS= -2.8 A,
dIF/ dt = 100 A/µs|||--|100|--||ns| |Qrr|Reverse Recovery Charge||||||--|0.34|--||µC| ## **Notes:** 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 500mH, IAS = -0.67A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -2.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially independent of operating temperature **www.onsemi.com** **2** ## **Typical Characteristics** **==> picture [392 x 563] intentionally omitted <==** **----- Start of picture text -----**
Top : -15.0 V VGS
-10.0 V
-8.0 V
100 -7.0 V -6.5 V
Bottom : -5.5 V -6.0 V 100
150℃
10-1 25℃
-55℃
※ Notes : ※ Notes :
1. 2502. TC = 25μ s Pulse Test℃ 2. 2501. VDS = -40Vμ s Pulse Test
10-1 100 101 10-1 2 4 6 8 10
-VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10
8
VGS = - 10V 100
6
VGS = - 20V
4
150℃ 25℃
2 ※ Notes :
※ Note : TJ = 25℃ 2. 250 1. VGS = 0Vμ s Pulse Test
0 10-1
0 2 4 6 8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-ID , Drain Current [A] -VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
12
400 CCCissossrss = C = C = Cgsgdds + C + Cgdgd (Cds = shorted) 10 VDS = -40V
VDS = -100V
300 Ciss 8 VDS = -160V
Coss 6
200
※ Notes : 4
100 Crss 2. f = 1 MHz1. VGS = 0 V
2
※ Note : ID = -2.8 A
0 0
10-1 100 101 0 1 2 3 4 6 7
-VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]
, Drain Current [A]-ID , Drain Current [A]-ID
],
Ω
[
DS(on)
R
, Reverse Drain Current [A]
Drain-Source On-Resistance -IDR
Capacitance [pF]
, Gate-Source Voltage [V]
GS
-V
**----- End of picture text -----**
**Figure 5. Capacitance Characteristics** **Figure 6. Gate Charge Characteristics** **www.onsemi.com** **3** **==> picture [438 x 632] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics (Continued)
1.2 2.5
2.0
1.1
1.5
1.0
1.0
0.9 ※ Notes :
2. I1. VDGS = -250 = 0 Vμ A 0.5 ※2. I1. V Notes :DGS = -0.335 A = -10 V
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
0.8
101 Operation in This Area
is Limited by R DS(on)
100 1 ms [100 ][µ][s] 0.6
10 ms
100 ms
10-1 DC 0.4
10-2 ※3. Single Pulse1. T2. T Notes :CJ = 150 = 25 oCoC 0.2
10-310-1 100 101 102 0.025 50 75 100 125 150
-VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 1 0 .10 .2 ※ 1. Z 3. T2. D N otes :J MθutyJA - (t) = 5 0 F ac to r, D = tT A = P℃D M/W M a x.* Z1 /tθJA2 [(t)]
0 .0 5
1 0 0 0 .0 20 .0 1 PDM
s in g le p u ls e t1 t2
1 0 - 1
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 2 1 0 3
t 1 , S qu a re W a ve P ulse D u ration [se c]
Figure 11. Transient Thermal Response Curve
, (Normalized) , (Normalized)
DSS DS(ON)
-BV R
Drain-Source On-Resistance
Drain-Source Breakdown Voltage
, Drain Current [A]-ID , Drain Current [A]-ID
oC/W](t), Thermal Response [
ZAJθ
**----- End of picture text -----**
**www.onsemi.com** **4** ## **Figure 12. Gate Charge Test Circuit & Waveform** **==> picture [400 x 347] intentionally omitted <==** **----- Start of picture text -----**
VGS
Same Type
50KΩ as DUT Qg
12V 200nF 300nF -10V
VGS VDS Qgs Qgd
DUT
IG = const. -3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS t on t off
RG VGS VDD VGS 10% td(on) tr td(off) tf
-10V VGS DUT
VDS 90%
**----- End of picture text -----**
**Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms** **==> picture [428 x 121] intentionally omitted <==** **----- Start of picture text -----**
VDS L EAS = ----12 L IAS2 --------------------BVBVDSSDSS- VDD
t p Time
I D
RG VDD VDD VDS (t)
ID (t)
-10V VGS DUT
IAS
t p BVDSS
**----- End of picture text -----**
**www.onsemi.com** **5** **==> picture [437 x 558] intentionally omitted <==** **----- Start of picture text -----**
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
(N-Channel) VDD
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS D = --------------------------
Gate Pulse Period 10V
( Driver )
Body Diode Reverse Current
I SD
( DUT ) IRM
di/dt
IFM , Body Diode Forward Current
VDS VSD
( DUT )
Body Diode VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
**----- End of picture text -----**
**www.onsemi.com** **6** ## **Mechanical Dimensions** **==> picture [98 x 15] intentionally omitted <==** **----- Start of picture text -----**
SOT-223 4L
**----- End of picture text -----**
## **Figure 16. Molded Package, SOT-223, 4 Lead** Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. Dimension in Millimeters **www.onsemi.com** **7** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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