# Power MOSFET, P Channel, 250 V, 3.1 A, 2.1 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3003895/) **URL**: https://novapart.co/products/FQD4P25TM-WS/power-mosfet-p-channel-250-v-31-a-21-ohm-to-252 **SKU**: FQD4P25TM-WS **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.5120 **Stock**: 10+ ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-250V; On Resistance Rds(on):1.63ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5 ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Channel Type | P Channel | | Product Range | QFET | | Qualification | - | | Power Dissipation | 45W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 250V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 3.1A | | Drain Source On State Resistance | 2.1ohm | | Gate Source Threshold Voltage Max | 5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3003895/) **==> picture [430 x 582] intentionally omitted <==** **----- Start of picture text -----**
FQD4P25TM-WS
P-Channel QFET [®] MOSFET
-250 V, -3.1 A, 2.1 Ω
Features
• [-3.1][ A, ][-250][ V, R] DS(on) [ = 2.1 ][Ω][ (Max.) @ V] GS [ = 10 V][,]
Description ID = -1.55 A
This P-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 10 nC)
produced using ON Semiconductor Semiconductor’s • Low Crss (Typ. 10.3 pF)
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially • 100% Avalanche Tested
tailored to reduce on-state resistance, and to provide • Improved dv/dt Capability
superior switching performance and high avalanche • RoHS Compliant
energy strength. These devices are suitable for switched
mode power supplies, audio amplifier, DC motor control,
and variable switching power applications.
S
D
G G
S D-PAK
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter FQD4P25TM - WS Unit
VDSS Drain-Source Voltage -250 V
ID Drain Current - Continuous (TC = 25°C) -3.1 A
a - Continuous (TC = 100°C) -1.96 A
IDM Drain Current - Pulsed (Note 1) -12.4 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 280 mJ
IAR Avalanche Current (Note 1) -3.1 A
EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns
PD Power Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C) 45 W
- Derate above 25°C 0.36 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
—— Maximum lead temperature for soldering, —————
TL 1/8" from case for 5 seconds 300 °C
ee
Thermal Characteristics
Symbol Parameter FQD4P25TM-WS Unit
RJC Thermal Resistance, Junction to Case, Max. 2.78
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 oC/W
RJA Thermal Resistance, Junction to Ambient (*1 in [2] Pad of 2-oz Copper), Max. 50
**----- End of picture text -----**
Publication Order Number: FQD4P25TM-WS/D ©2011 Semiconductor Components Industries, LLC. August-2017, Rev. 3 |**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.|**Package Marking and Ordering Information**
**Part Number**
**Top Mark**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQD4P25S
FQD4P25TM-WS
DPAK
330 mm
16 mm
2500 units
**Packing Method**
Tape and Reel
**Electrical Characteristics**
TC= 25°C unless otherwise noted.| |---|---|---|---|---|---|---|---|---|---|---|---|---| |||**Top Mark**|**Package**||**Packing Method**|**Reel Size**||**Tape Width**|||**Quantity**|| |||FQD4P25S|DPAK||Tape and Reel|330 mm||16 mm|||2500 units|| |||||unless otherwise noted.||||||||| |Symbol|Parameter|||Test Conditions|||Min.||Typ.|Max.||Unit| |Off Characteristics||||||||||||| |BVDSS|Drain-Source Breakdown Voltage|||VGS= 0 V, ID= -250µA|||-250||--|--||V| |∆BVDSS
/∆TJ|Breakdown Voltage Temperature
Coefficient|||ID= -250µA, Referenced to 25°C|||--||-0.21|--||V/°C| |IDSS|Zero Gate Voltage Drain Current|||VDS= -250 V, VGS= 0 V|||--||--|-1||µA| |||||VDS= -200 V, TC= 125°C|||--||--|-10||µA| |IGSSF|Gate-Body Leakage Current, Forward|||VGS= -30 V, VDS= 0 V|||--||--|-100||nA| |IGSSR|Gate-Body Leakage Current, Reverse|||VGS= 30 V, VDS= 0 V|||--||--|100||nA| |On Characteristics||||||||||||| |VGS(th)|Gate Threshold Voltage|||VDS= VGS, ID= -250µA|||-3.0||--|-5.0||V| |RDS(on)|Static Drain-Source
On-Resistance|||VGS= -10 V, ID= -1.55 A|||--||1.63|2.1||Ω| |gFS|Forward Transconductance|||VDS= -40 V, ID= -1.55 A|||--||2.0|--||S| |Dynamic Characteristics||||||||||||| |Ciss|Input Capacitance|||VDS= -25 V, VGS= 0 V,
f = 1.0 MHz|||--||325|420||pF| |Coss|Output Capacitance||||||--||65|85||pF| |Crss|Reverse Transfer Capacitance||||||--||10|13||pF| |SwitchingCharacteristics||||||||||||| |td(on)|Turn-On Delay Time|||(Note 4)
VDD= -125 V, ID= -4.0 A,
RG= 25Ω|||--||9.5|30||ns| |tr|Turn-On Rise Time||||||--||60|130||ns| |td(off)|Turn-Off Delay Time||||||--||14|40||ns| |tf|Turn-Off Fall Time||||||--||27|65||ns| |Qg|Total Gate Charge|||VDS= -200 V, ID= -4.0 A,
VGS= -10 V
(Note 4)|||--||10.3|14||nC| |Qgs|Gate-Source Charge||||||--||2.7|--||nC| |Qgd|Gate-Drain Charge||||||--||5.2|--||nC| |Drain-Source Diode Characteristics and Maximum Ratings||||||||||||| |IS|Maximum Continuous Drain-Source Diode Forward Current||||||--||--|-3.1||A| |ISM|Maximum Pulsed Drain-Source Diode Forward Current||||||--||--|-12.4||A| |VSD|Drain-Source Diode Forward Voltage|||VGS= 0 V, IS= -3.1 A|||--||--|-5.0||V| |trr|Reverse Recovery Time|||VGS= 0 V, IS= -4.0 A,
dIF/ dt = 100 A/µs|||--||140|--||ns| |Qrr|Reverse Recovery Charge||||||--||0.64|--||µC| Notes: 1. Repetitive r ating : p ulse - width limited by maximum Hunction temperature . 2. L = 46.6 mH, IAS = -3.1 A, VDD = - 5 0V, R G = 25 Ω, s tarting TJ = 25°C . 3. ISD ≤ -4.0 A, diVdt ≤ 300 AVµs, VDD ≤ BVDSS, s tarting TJ = 25°C . 4. Essentially independent of operating temperature . **www.onsemi.com** **2** ## **Typical Characteristics** **==> picture [389 x 532] intentionally omitted <==** **----- Start of picture text -----**
101 Top : -15.0V G VS 101
-10.0 V
-8.0 V
-7.0 V
-6.5 V
100 Bot tom : -5.5 -6.0 V V
100 15 0℃
10-1
25℃
※ N ote s : ※ Notes :
1. 2. 250 TC = µs Pu 25℃ lse T est -55℃ 2. 250µs Pulse Test 1. V DS = -50 V
10-210-1 100 101 10-1 2 4 6 8 10
-VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
8
101
6
VGS = - 10V
VGS = - 20V
4 100
2
150℃ 25℃ ※ Notes :
※ Note : TJ = 25℃ 2. 250µs Pulse Test 1. VGS = 0V
0 10-1
0 3 6 9 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0
-ID , Drain Current [A] -VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
700 12
600 C CCrssissoss = C = C = Cgsgdds + C + Cggdd (Cds = shorted) 10 V DSV = -1DS = -50V 25V
500 VDS = -200V
C iss 8
400
C oss 6
300
※ Notes : 4
200 C rss 2. 1. V f = 1 GS = 0 V MHz
100 2
※ Note : ID = -4.0 A
0 0
10-1 100 101 0 2 4 6 8 10 12
-VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]
, Drain Current [A]-ID , Drain Current [A]-ID
],
Ω
[
DS(on)
R
Drain-Source On-Resistance , Reverse Drain Current [A]
DR
-I
Capacitance [pF]
, Gate-Source Voltage [V]
GS
-V
**----- End of picture text -----**
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics **www.onsemi.com** **3** **==> picture [410 x 603] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics (Continued)
1.2 3.0
2.5
1.1
2.0
1.0 1.5
1.0
0.9 ※ 1. V 2. I NotDGS = -250 µAe : = 0 V 0.5 2. I※ 1. Notes : VDGS = -2.0 A = -1 0 V
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
3.5
O pera tio n in Th is Ar ea
is Lim ite d by R DS(on) 3.0
101
1 0 0 µs 2.5
1 ms
10 ms 2.0
100 DC 1.5
1.0
※ Notes :
10-1 1. T 2. TC J = 25 = 150 oCoC 0.5
3 . Sin gl e Pu lse
0.0
100 101 102 25 50 75 100 125 150
-VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2 ※ 1 . Z N o θ te s : J C [(t) = 2 .7 8 ][℃] [/W] [ M a x .]
0 .1 2 . D u ty F a c to r, D = t 3 . T J M - T C = P D M * Z 1θ /t 2J C [(t)]
0 .0 5
1 0 -1 0 .0 2 PDM
0 .0 1 s in g le p u ls e t 1 t 2
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
, (Normalized) , (Normalized)
DSS DS(ON)
-BV R
Drain-Source On-Resistance
Drain-Source Breakdown Voltage
, Drain Current [A]-ID , Drain Current [A]-ID
oC/W](t), Thermal Response [
ZJC
**----- End of picture text -----**
**www.onsemi.com** **4** **==> picture [431 x 554] intentionally omitted <==** **----- Start of picture text -----**
VGS
Same Type
50KΩ as DUT Qg
12V 200nF
300nF
VGS VDS Qgs Qgd
DUT
IG = const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS t on t off
RG VGS VDD VGS 10% td(on) tr td(off) tf
VGS DUT
VDS 90%
Figure 13. Resistive Switching Test Circuit & Waveforms
L BVDSS
VDS EAS = -1---2 L IAS2 --------------------BVDSS - VDD
t p Time
I D
RG VDD VDD VDS (t)
ID (t)
VGS DUT
IAS
t p BVDSS
**----- End of picture text -----**
**Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms** **www.onsemi.com** **5** **==> picture [334 x 510] intentionally omitted <==** **----- Start of picture text -----**
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
(N-Channel) VDD
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
Pulse Wid
VGS D = --- [Gate] ---------------------- [th] -
Gate Pulse Period 10V
( Driver )
Body Diode Reverse Current
I SD
( DUT ) IRM
di/dt
IFM , Body Diode Forward Current
VDS VSD
( DUT )
Body Diode VDD
Forward Voltage Drop
Body Diode Recovery dv/dt
**----- End of picture text -----**
**Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms** **www.onsemi.com** **6** ## **Mechanical Dimensions** ## **Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor's representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products._ **www.onsemi.com** **7** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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