# Power MOSFET, P Channel, 500 V, 2.1 A, 3.9 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2575364/)

**URL**: https://novapart.co/products/FQD3P50TM/power-mosfet-p-channel-500-v-21-a-39-ohm-to-252
**SKU**: FQD3P50TM
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5090
**Stock**: 1000+
**Lead Time**: 78 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-2.1A; Drain Source Voltage Vds:-500V; On Resistance Rds(on):3.9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage V

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | QFET |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.1A |
| Drain Source On State Resistance | 3.9ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2575364/)

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SSSa July 2013<br>SEMICONDUCTOR?<br>FQD3P50<br>P-Channel QFET [®] MOSFET<br>- 500 V, - 2.1 A, 4.9 Ω<br>Description Features<br>This P-Channel enhancement mode power MOSFET is  • - 2.1 A, - 500 V, RDS(on) = 4.9 Ω (Max.) @ VGS = - 10 V,<br>produced using Fairchild Semiconductor [®] ’s proprietary  ID = - 1.05 A<br>planar stripe and DMOS technology. This advanced  • Low Gate Charge (Typ. 18 nC)<br>MOSFET technology has been especially tailored to  • Low Crss (Typ. 9.5 pF)<br>reduce on-state resistance, and to provide superior<br>switching performance and high avalanche energy  • 100% Avalanche Tested<br>strength. These devices are suitable for switched mode<br>power supplies, active power factor correction (PFC), and<br>electronic lamp ballasts.<br>S<br>D !<br>●<br>G G ! ●<br>▶ ▲<br>S ●<br> D-PAK<br>(TO252) D !<br>Absolute Maximum Ratings    TC = 25°C unless otherwise noted<br>Symbol a Parameter FQD3P50 Unit<br>VDSS GO Drain-Source Voltage -500 V<br>ID Drain Current - Continuous (TC = 25°C) Po -2.1 A<br>- Continuous (TC = 100°C) -1.33 A<br>IDM Drain Current - Pulsed (Note 1) -8.4 A<br>pePo<br>VGSS Gate-Source Voltage ± 30 V<br>pe<br>EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ<br>pe<br>IAR Avalanche Current (Note 1) -2.1 A<br>pe<br>EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ<br>pe<br>dv/dt a Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns<br>PD a Power Dissipation (TA = 25°C) * 2.5 W<br>Power Dissipation (TC = 25°C) 50 W<br>- Derate above 25°C 0.4 W/°C<br>———————<—<——Po<br>TJ, TSTG a Operating and Storage Temperature Range -55 to +150 °C<br>Maximum lead temperature for soldering purposes,<br>TL 1/8" from case for 5 seconds 300 °C<br>Thermal Characteristics<br>Symbol Parameter FQD3P50 Unit<br>RθJC Thermal Resistance, Junction-to-Case, Max. 2.5 °C / W<br>RθJA Thermal Resistance, Junction-to-Ambient, Max. * 50 °C / W<br>RθJA Thermal Resistance, Junction-to-Ambient, Max. 110 °C / W<br>* When mounted on the minimum pad size recommended (PCB Mount)<br>**----- End of picture text -----**<br>


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©2009 Fairchild Semiconductor Corporation<br>FQD3P50 Rev. C1<br>**----- End of picture text -----**<br>


www.fairchildsemi.com 

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FQD3P50<br>P-Channel QFET<br>®<br> MOSFET<br>**----- End of picture text -----**<br>


|**Elerical Characteristics**TC= 25°C unl|**Elerical Characteristics**TC= 25°C unl|ess otherwise noted|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**Off Characteristics**|||||||
|BVDSS|Drain-Source Breakdown Voltage|VGS= 0 V, ID= -250µA|-500|--|--|V|
|∆BVDSS<br>/∆TJ|Breakdown Voltage Temperature<br>Coefficient|ID= -250µA, Referenced to 25°C|--|0.42|--|V/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= -500 V, VGS= 0 V|--|--|-1|µA|
|||VDS= -400 V, TC= 125°C|--|--|-10|µA|
|IGSSF|Gate-Body Leakage Current, Forward|VGS= -30 V, VDS= 0 V|--|--|-100|nA|
|IGSSR|Gate-Body Leakage Current, Reverse|VGS= 30 V, VDS= 0 V|--|--|100|nA|
|**On Characteristics**|||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= -250µA|-3.0|--|-5.0|V|
|RDS(on)|Static Drain-Source<br>On-Resistance|VGS= -10 V, ID= -1.05 A|--|3.9|4.9|Ω|
|gFS|Forward Transconductance|VDS= -50 V, ID= -1.05 A|--|2.1|--|S|
|**Dynamic Characteristics**|||||||
|Ciss|Input Capacitance|VDS= -25 V, VGS= 0 V,<br>f = 1.0 MHz|--|510|660|pF|
|Coss|Output Capacitance||--|70|90|pF|
|Crss|Reverse Transfer Capacitance||--|9.5|12|pF|
|**Switching Characteristics**|||||||
|td(on)|Turn-On Delay Time|(Note 4)<br>VDD= -250 V, ID= -2.7 A,<br>RG= 25Ω|--|12|35|ns|
|tr|Turn-On Rise Time||--|56|120|ns|
|td(off)|Turn-Off Delay Time||--|35|80|ns|
|tf|Turn-Off Fall Time||--|45|100|ns|
|Qg|Total Gate Charge|(Note 4)<br>VDS= -400 V, ID= -2.7 A,<br>VGS= -10 V|--|18|23|nC|
|Qgs|Gate-Source Charge||--|3.6|--|nC|
|Qgd|Gate-Drain Charge||--|9.2|--|nC|
|**Drain-Source Diode Characteristics and Maximum Ratings**|||||||
|IS|Maximum Continuous Drain-Source Diode Forward Current||--|--|-2.1|A|
|ISM|Maximum Pulsed Drain-Source Diode Forward Current||--|--|-8.4|A|
|VSD|Drain-Source Diode Forward Voltage|VGS= 0 V, IS= -2.1 A|--|--|-5.0|V|
|trr|Reverse Recovery Time|VGS= 0 V, IS= -2.7 A,<br>dIF/ dt = 100 A/µs|--|270|--|ns|
|Qrr|Reverse Recovery Charge||--|1.5|--|µC|



## **Notes:** 

1. Repetitive Rating : Pulse width limited by maximum junction temperature 

2. L = 102mH, IAS = -2.1A, VDD = -50V, RG = 25 Ω, Starting  TJ = 25°C 

3. ISD ≤ -2.7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting  TJ = 25°C 

4. Essentially independent of operating temperature 

©2009 Fairchild Semiconductor Corporation FQD3P50 Rev. C1 

www.fairchildsemi.com 

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Typical Characteristics<br>Top :       -15.0 V    VGS<br>  -10.0 V<br>  -8.0 V<br>  -7.0 V<br>100   -6.5 V  -6.0 V<br>Bottom :    -5.5 V<br>100 150℃<br>10-1<br>25℃<br>※  1. 250  2. T Notes :C = 25μs Pulse Test℃ -55℃ ※  1. V  2. 250 Notes :DS = -50Vμs Pulse Test<br>10-210-1 100 101 10-1 2 4 6 8 10<br>-VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage  [V]<br>Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics<br>8<br>7<br>VGS = - 10V<br>6 VGS = - 20V<br>5 100<br>4<br>3 150℃ 25℃ ※ Notes :<br>※ Note : TJ = 25℃   1. V  2. 250GS = 0Vμs Pulse Test<br>2 10-1<br>0 2 4 6 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>-ID , Drain Current  [A] -VSD , Source-Drain Voltage  [V]<br>Figure 3. On-Resistance Variation  vs. Figure 4. Body Diode Forward Voltage<br>Drain Current and Gate Voltage Variation vs. Source Current<br>and Temperature<br>1200 12<br>Ciss = Cgs + Cgd (Cds = shorted)<br>1000 CCossrss = C = Cgdds + Cgd 10 VDS = -100V<br>VDS = -250V<br>800 Ciss 8 VDS = -400V<br>600 6<br>400 Coss ※ Notes : 4<br>   1. VGS = 0 V<br>200 Crss  2. f = 1 MHz 2<br>※ Note : ID = -2.7 A<br>0 0<br>10-1 100 101 0 2 4 6 8 10 12 14 16 18 20<br>VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]<br>, Drain Current [A]-ID  , Drain Current  [A]-ID<br>],<br>Ω<br>   [<br>DS(on)<br>R<br>Drain-Source On-Resistance<br> , Reverse Drain Current  [A]<br>DR<br>-I<br>Capacitance [pF]<br>, Gate-Source Voltage [V]<br>GS<br>-V<br>**----- End of picture text -----**<br>


## **Typical Characteristics** 

**Figure 5. Capacitance Characteristics** 

**Figure 6. Gate  Charge Characteristics** 

©2009 Fairchild Semiconductor Corporation FQD3P50 Rev. C1 

www.fairchildsemi.com 

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Typical Characteristics      (Continued)<br>1.2 2.5<br>2.0<br>1.1<br>1.5<br>1.0<br>1.0<br>0.9 ※ Notes :<br> 1. V 2. IDGS = -250  = 0 VμA 0.5 ※ 1. V 2. I Notes :DGS = -1.35 A = -10 V<br>0.8 0.0<br>-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200<br>TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]<br>Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation<br>vs. Temperature vs. Temperature<br>2.5<br>Operation in This Area<br>101 is Limited by R DS(on) 2.0<br>100 µs<br>1 ms 1.5<br>100 10 ms<br>DC<br>1.0<br>10-1 ※ Notes :<br>  1. TC = 25 oC 0.5<br>  3. Single Pulse  2. TJ = 150 oC<br>10-2100 101 102 103 0.025 50 75 100 125 150<br>-VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]<br>Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current<br>vs.  Case Temperature<br>1 0 0 D = 0 .5<br>0 .10 .2    2 . D u ty F a c to r, D = t※   1 . Z   3 . T N o te s  :θJ M  -  TJ C(t) =  2 .5  C  =  P D M℃*  Z/W 1θ/t M 2J C(t)a x .<br>0 .0 5<br>1 0 -1 0 .0 2<br>0 .0 1 PDM<br>s in g le  p u ls e t1<br>t2<br>1 0 -21 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1<br>t 1 , S q u a re  W a v e  P u ls e  D u ra tio n  [s e c ]<br>Figure 11. Transient Thermal Response Curve<br>, (Normalized)  , (Normalized)<br> DSS DS(ON)<br>-BV R<br>Drain-Source On-Resistance<br>Drain-Source Breakdown Voltage<br>, Drain Current [A]-ID , Drain Current [A]-ID<br>(t), T h e rm a l R e s p o n s eJ C<br>θ<br>Z<br>**----- End of picture text -----**<br>


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 Gate Charge Test Circuit & Waveform<br>VGS<br>Same Type<br>50KΩ as DUT Qg<br>12V 200nF 300nF -10V<br>VGS VDS Qgs Qgd<br>DUT<br>-3mA<br>Charge<br> Resistive Switching Test Circuit & Waveforms<br>RL<br>VDS t on t off<br>RG VGS VDD VGS 10% td(on) tr td(off) tf<br>DUT<br>-10V<br>VDS 90%<br> Unclamped Inductive Switching Test Circuit & Waveforms<br>VDS L EAS = ----12 L IAS2 --------------------BVBVDSSDSS- VDD<br>t p Time<br>I D<br>RG VDD VDD VDS (t)<br>ID (t)<br>-10V DUT<br>IAS<br>t p BVDSS<br>**----- End of picture text -----**<br>


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FQD3P50<br>P-Channel QFET<br>®<br> MOSFET<br>**----- End of picture text -----**<br>


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 Peak Diode Recovery dv/dt Test Circuit & Waveforms<br>+<br>VDS<br>DUT<br>_<br>I SD<br>L<br>Driver<br>RG<br>Compliment of DUT<br>(N-Channel) VDD<br>VGS • dv/dt controlled by  RG<br>• ISD controlled by pulse period<br>Gate Pulse Width<br>VGS D = --------------------------Gate Pulse Period 10V<br>( Driver )<br>Body Diode Reverse Current<br>I SD<br>( DUT ) IRM<br>di/dt<br>IFM , Body Diode Forward Current<br>VDS VSD<br>( DUT )<br>Body Diode VDD<br>Forward Voltage Drop<br>Body Diode Recovery dv/dt<br>**----- End of picture text -----**<br>


©2009 Fairchild Semiconductor Corporation FQD3P50 Rev. C1 

www.fairchildsemi.com 

## **Mechanical Dimensions** 

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D-PAK<br>**----- End of picture text -----**<br>


## **TO-252 (DPAK) MOLDED, 3 LEAD, OPTION AA** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003_ Dimensions in Millimeters 

©2009 Fairchild Semiconductor Corporation FQD3P50 Rev. C1 

www.fairchildsemi.com 

## **TRADEMARKS** 

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|2Cool™<br>AccuPower™<br>AX-CAP®*<br>BitSiC™<br>Build it Now™<br>CorePLUS™<br>CorePOWER™<br>_CROSSVOLT_™<br>CTL™<br>Current Transfer Logic™<br>DEUXPEED®<br>Dual Cool™<br>EcoSPARK®<br>EfficentMax™<br>ESBC™<br>Fairchild®<br>Fairchild Semiconductor®<br>FACT Quiet Series™<br>FACT®<br>FAST®<br>FastvCore™<br>FETBench™<br>®<br>~~F~~|FPS™<br>F-PFS™<br>FRFET®<br>Global Power ResourceSM<br>Green Bridge™<br>Green FPS™<br>Green FPS™ e-Series™<br>G_max_™<br>GTO™<br>IntelliMAX™<br>ISOPLANAR™<br>Marking Small Speakers Sound Louder<br>and Better™<br>MegaBuck™<br>MICROCOUPLER™<br>MicroFET™<br>MicroPak™<br>MicroPak2™<br>MillerDrive™<br>MotionMax™<br>mWSaver™<br>OptoHiT™<br>OPTOLOGIC®<br>OPTOPLANAR®|PowerTrench®<br>PowerXS™<br>Programmable Active Droop™<br>QFET®<br>QS™<br>Quiet Series™<br>RapidConfigure™<br>Saving our world, 1mW/W/kW at a time™<br>SignalWise™<br>SmartMax™<br>SMART START™<br>Solutions for Your Success™<br>SPM®<br>STEALTH™<br>SuperFET®<br>SuperSOT™-3<br>SuperSOT™-6<br>SuperSOT™-8<br>SupreMOS®<br>SyncFET™<br>™<br>tm®|Sync-Lock™<br>®*<br>TinyBoost™<br>TinyBuck™<br>TinyCalc™<br>TinyLogic®<br>TINYOPTO™<br>TinyPower™<br>TinyPWM™<br>TinyWire™<br>TranSiC®<br>TriFault Detect™<br>TRUECURRENT®*<br>μSerDes™<br>UHC®<br>Ultra FRFET™<br>UniFET™<br>VCX™<br>VisualMax™<br>VoltagePlus™<br>XS™<br>E SYSTEM<br>GENERAL<br>174...|
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I64 

©2009 Fairchild Semiconductor Corporation FQD3P50 Rev. C1 

www.fairchildsemi.com 



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