# Power MOSFET, N Channel, 60 V, 11 A, 0.092 ohm, TO-252AA, Surface Mount ![Product image](https://novapart.co/image/farnell:2454166/) **URL**: https://novapart.co/products/FQD13N06LTM/power-mosfet-n-channel-60-v-11-a-0092-ohm-to-252aa **SKU**: FQD13N06LTM **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2170 **Stock**: 1000+ **Lead Time**: 92 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 28W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-252AA | | Drain Source Voltage Vds | 60V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 11A | | Drain Source On State Resistance | 0.092ohm | | Gate Source Threshold Voltage Max | 2.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2454166/) ## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ## **FQD13N06L / FQU13N06L** ## **N-Channel QFET[®] MOSFET** **60 V, 11 A, 115 mΩ** ## **Description** ## **Features** - 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V, ID = 5.5 A |**Description**
• 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V,DS(on) = 115 mΩ (Max) @ VGS = 10 V,= 115 mΩ (Max) @ VGS = 10 V,Ω (Max) @ VGS = 10 V,(Max) @ VGS = 10 V,GS = 10 V,= 10 V,
ID = 5.5 AD = 5.5 A= 5.5 A|**Description**
• 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V,DS(on) = 115 mΩ (Max) @ VGS = 10 V,= 115 mΩ (Max) @ VGS = 10 V,Ω (Max) @ VGS = 10 V,(Max) @ VGS = 10 V,GS = 10 V,= 10 V,
ID = 5.5 AD = 5.5 A= 5.5 A|**Description**
• 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V,DS(on) = 115 mΩ (Max) @ VGS = 10 V,= 115 mΩ (Max) @ VGS = 10 V,Ω (Max) @ VGS = 10 V,(Max) @ VGS = 10 V,GS = 10 V,= 10 V,
ID = 5.5 AD = 5.5 A= 5.5 A|**Description**
• 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V,DS(on) = 115 mΩ (Max) @ VGS = 10 V,= 115 mΩ (Max) @ VGS = 10 V,Ω (Max) @ VGS = 10 V,(Max) @ VGS = 10 V,GS = 10 V,= 10 V,
ID = 5.5 AD = 5.5 A= 5.5 A|**Description**
• 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V,DS(on) = 115 mΩ (Max) @ VGS = 10 V,= 115 mΩ (Max) @ VGS = 10 V,Ω (Max) @ VGS = 10 V,(Max) @ VGS = 10 V,GS = 10 V,= 10 V,
ID = 5.5 AD = 5.5 A= 5.5 A|**Description**
• 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V,DS(on) = 115 mΩ (Max) @ VGS = 10 V,= 115 mΩ (Max) @ VGS = 10 V,Ω (Max) @ VGS = 10 V,(Max) @ VGS = 10 V,GS = 10 V,= 10 V,
ID = 5.5 AD = 5.5 A= 5.5 A|**Description**
• 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V,DS(on) = 115 mΩ (Max) @ VGS = 10 V,= 115 mΩ (Max) @ VGS = 10 V,Ω (Max) @ VGS = 10 V,(Max) @ VGS = 10 V,GS = 10 V,= 10 V,
ID = 5.5 AD = 5.5 A= 5.5 A|**Description**
• 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V,DS(on) = 115 mΩ (Max) @ VGS = 10 V,= 115 mΩ (Max) @ VGS = 10 V,Ω (Max) @ VGS = 10 V,(Max) @ VGS = 10 V,GS = 10 V,= 10 V,
ID = 5.5 AD = 5.5 A= 5.5 A|**Description**
• 11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V,DS(on) = 115 mΩ (Max) @ VGS = 10 V,= 115 mΩ (Max) @ VGS = 10 V,Ω (Max) @ VGS = 10 V,(Max) @ VGS = 10 V,GS = 10 V,= 10 V,
ID = 5.5 AD = 5.5 A= 5.5 A|11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V,DS(on) = 115 mΩ (Max) @ VGS = 10 V,= 115 mΩ (Max) @ VGS = 10 V,Ω (Max) @ VGS = 10 V,(Max) @ VGS = 10 V,GS = 10 V,= 10 V,| |---|---|---|---|---|---|---|---|---|---| |This N-Channel enhancement mode power MOSFET is
produced
using
ON
Semiconductor’s
proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
**I-PAK**
**G**
**S**
**D**
**Absolute Maximum Ratings **TC= 25
oC unless otherwise noted.
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
• Low Level Gate Drive Requirements Allowing
Direct Operation form Logic Drivers
**1**
**2**
**3**
**4**
**D-PAK**
**4**
**12 3**
**1**
**3**
**2, 4**
~~oF&~~|||||||||| |**Symbol**
**Parameter**||**FQD13N06LTM / FQU13N06LTU**|||||||**Unit**| |||**FQU13N06LTU-WS**|||||||| |VDSS
Drain-Source Voltage|||60||||||V| |ID
Drain Current
- Continuous (TC= 25°C)|||11||||||A| |- Continuous (TC= 100°C)|||7||||||A| |IDM
Drain Current
- Pulsed|(Note 1)||44||||||A| |VGSS
Gate-Source Voltage||± 20|||||||V| |EAS
Single Pulsed Avalanche Energy|(Note 2)||90||||||mJ| |IAR
Avalanche Current|(Note 1)||11||||||A| |EAR
Repetitive Avalanche Energy|(Note 1)|2.8|||||||mJ| |dv/dt
Peak Diode Recoverydv/dt|(Note 3)|7.0|||||||V/ns| |PD
Power Dissipation (TA= 25°C) *||2.5|||||||W| |Power Dissipation (TC= 25°C)|||28||||||W| |- Derate above 25°C||0.22|||||||W/°C| |TJ, TSTG
Operating and Storage Temperature Range||-55 to +150|||||||°C| |TL
Maximum Lead Temperature for Soldering,
1/8"from Case for
5
Seconds||300|||||||°C| **==> picture [449 x 119] intentionally omitted <==** **----- Start of picture text -----**
Thermal Characteristics
FQD13N06LTM
Symbol Parameter FQU13N06LTU Unit
FQU13N06LTU-WS
RJC Thermal Resistance, Junction to Case, Max. 2.5
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 oC/W
RJA
———S Thermal Resistance, Junction to Ambient (*1 in [2] Pad of 2-oz Copper), Max. 50
©2000 Semiconductor Components Industries, LLC. Publication Order Number:
October-2017,Rev.2 FQU13N06L/D
**----- End of picture text -----**
## **Package Marking and Ordering Information** |**Part Number**|**Part Number**|**Top Mark**|**Package**|**Package**|**Packing Method**|**Reel Size**|**Reel Size**|**Tape Width**|**Tape Width**|**Tape Width**|**Quantity**|**Quantity**| |---|---|---|---|---|---|---|---|---|---|---|---|---| |FQD13N06LTM||FQD13N06L|D-PAK||Tape and Reel|330 mm||16 mm|||2500 units|| |FQU13N06LTU||FQU13N06L|I-PAK||Tube|N/A||N/A|||70units|| |FQU13N06LTU-WS||FQU13N06LS|I-PAK||Tube|N/A||N/A|||75 units|| |**Electrical Characteristics**TC= 25
oC unl||||ess otherwise noted.||||||||| |**Symbol**|**Parameter**|||**Test Conditions**|||**Min**||**Typ**|**Max**||**Unit**| |**Off Characteristics**||||||||||||| |BVDSS|Drain-Source Breakdown Voltage|||VGS= 0 V, ID= 250µA|||60||--|--||V| |∆BVDSS
/∆TJ|Breakdown Voltage Temperature
Coefficient|||ID= 250µA, Referenced to 25°C|||--||0.05|--||V/°C| |IDSS|Zero Gate Voltage Drain Current|||VDS= 60 V, VGS= 0 V|||--||--|1||µA| |||||VDS= 48 V, TC= 150°C|||--||--|10||µA| |IGSSF|Gate-Body Leakage Current, Forward|||VGS= 20 V, VDS= 0 V|||--||--|100||nA| |IGSSR|Gate-Body Leakage Current, Reverse|||VGS= -20 V, VDS= 0 V|||--||--|-100||nA| |**On Characteristics**||||||||||||| |VGS(th)|Gate Threshold Voltage|||VDS= VGS, ID= 250µA|||1.0||--|2.5||V| |RDS(on)|Static Drain-Source
On-Resistance|||VGS= 10 V, ID= 5.5 A
VGS= 5 V, ID= 5.5 A|||--
--||0.092
0.115|0.115
0.145||Ω| |gFS|Forward Transconductance|||VDS= 25 V, ID= 5.5 A|||--||6|--||S| |**Dynamic Characteristics**||||||||||||| |Ciss|Input Capacitance|||VDS= 25 V, VGS= 0 V,
f = 1.0 MHz|||--||270|350||pF| |Coss|Output Capacitance||||||--||95|125||pF| |Crss|Reverse Transfer Capacitance||||||--||17|23||pF| |**Switching Characteristics**||||||||||||| |td(on)|Turn-On Delay Time|||VDD= 30 V, ID= 6.8 A,
RG= 25Ω
(N
ote 4)|||--||8|25||ns| |tr|Turn-On Rise Time||||||--||90|190||ns| |td(off)|Turn-Off Delay Time||||||--||20|50||ns| |tf|Turn-Off Fall Time||||||--||40|90||ns| |Qg|Total Gate Charge|||VDS= 48 V, ID= 13.6 A,
VGS= 5 V
(Note 4)|||--||4.8|6.4||nC| |Qgs|Gate-Source Charge||||||--||1.6|--||nC| |Qgd|Gate-Drain Charge||||||--||2.7|--||nC| |**Drain-Source Diode Characteristics and Maximum Ratings**||||||||||||| |IS|Maximum Continuous Drain-Source Diode Forward Current||||||--||--|11||A| |ISM|Maximum Pulsed Drain-Source Diode Forward Current||||||--||--|44||A| |VSD|Drain-Source Diode Forward Voltage|||VGS= 0 V, IS= 11 A|||--||--|1.5||V| |trr|Reverse Recovery Time|||VGS= 0 V, IS= 13.6 A,
dIF/ dt = 100 A/µs|||--||45|--||ns| |Qrr|Reverse Recovery Charge||||||--||45|--||nC| - ������ 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 870 µH, IAS = 11 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25[o] C. 3. ISD ≤ 13.6 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25[o] C. 4. Essentially independent of operating temperature. www.onsemi.com 2 ## ����������������������� **==> picture [398 x 541] intentionally omitted <==** **----- Start of picture text -----**
Top : 10.0 V VGS
8.0 V
6.0 V
5.0 V
4.5 V 101
4.0 V
101 Bottom : 3.0 V 3.5 V
100
150℃
100 ※1. 2502. T Notes :C = 25μ s Pulse Test℃ 25℃ -55℃ ※ 1. V 2. 250 Notes :DS = 25Vμ s Pulse Test
10-1 100 101 10-1 0 2 4 6 8 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
300
101
200 VGS = 5V
VGS = 10V
100 100
※ Notes :
※ Note : TJ = 25℃ 150℃ 25℃ 1. V 2. 250GS = 0Vμ s Pulse Test
0
0 10 20 30 40 10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
800 CCissoss = C = Cgsds + C + Cgdgd (Cds = shorted) 12
Crss = Cgd
10
VDS = 30V
600
8 VDS = 48V
Coss
400 Ciss ※2. f = 1 MHz1. V Notes :GS = 0 V 6
4
200 Crss
2
※ Note : ID = 13.6A
0
0 0 2 4 6 8 10
10-1 VDS, Drain-Source Voltage [V]100 101 QG, Total Gate Charge [nC]
, Drain Current [A]ID , Drain Current [A]ID
],
Ω
[m
DS(ON)
R
, Reverse Drain Current [A]
Drain-Source On-Resistance IDR
Capacitance [pF]
, Gate-Source Voltage [V]
GS
V
**----- End of picture text -----**
**Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics** **www.onsemi.com** **3** ## ��������������������������������������� **==> picture [400 x 558] intentionally omitted <==** **----- Start of picture text -----**
1.2
2.5
2.0
1.1
1.5
1.0
1.0
0.9 ※ Notes :
2. I 1. VDGS = 250 = 0 Vμ A 0.5 ※1. V2. I Notes :D = 5.5 AGS = 10 V
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
12
102 Operation in This Area is Limited by R DS(on) 10
100 µs 8
101 1 ms
10 ms 6
DC
4
100
※ Notes :
1. T 2. T 3. Single PulseCJ = 150 = 25 oCoC 2
10-1 0
10-1 100 101 102 25 50 75 100 125 150
VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0 0 .2 ※ N o t e s :
0 .1 1 . Z 2 . D u t y F a c t o r , D = t 3 . T θJ M - TJ C(t ) C = = P 4 .5 D M℃* Z/W M a x .θ 1 /tJ C 2 [(t )]
0 .0 5
0 .0 2 PDM
1 0 -1 0 .0 1 s in g le p u ls e t1
t2
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
t 1 , R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
, (Normalized) , (Normalized)
DSS DS(ON)
BV R
Drain-Source On-Resistance
Drain-Source Breakdown Voltage
, Drain Current [A]ID , Drain Current [A]ID
oC/W](t), Thermal Response [
ZJC
**----- End of picture text -----**
**www.onsemi.com** **4** **==> picture [353 x 166] intentionally omitted <==** **----- Start of picture text -----**
VGS
Same Type
50KΩ as DUT Qg
12V 200nF 300nF 10V
VGS VDS Qgs Qgd
DUT
IG = const. 3mA
Charge
**----- End of picture text -----**
**Figure 12. Gate Charge Test Circuit & Waveform** **==> picture [434 x 311] intentionally omitted <==** **----- Start of picture text -----**
VDS RL VDS 90%
VGS VDD
RG
10%
V 10V GS DUT VGS
td(on) tr td(off) tf
t on t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS L EAS = ----12 L IAS2 --------------------BVBVDSSDSS- VDD
I D BVDSSIAS
RG VDD ID (t)
VV 10V GSGS DUT VDD VDS (t)
t p t p Time
**----- End of picture text -----**
**Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms** **www.onsemi.com 5** **==> picture [335 x 537] intentionally omitted <==** **----- Start of picture text -----**
DUT +
VDS
_
I SD
L
Driver
RG
Same Type
as DUT VDD
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS D = --------------------------
Gate Pulse Period 10V
( Driver )
IFM , Body Diode Forward Current
I SD
( DUT ) di/dt
IRM
Body Diode Reverse Current
VDS
( DUT ) Body Diode Recovery dv/dt
VSD VDD
Body Diode
Forward Voltage Drop
**----- End of picture text -----**
**Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms** **www.onsemi.com** **6** ## **Mechanical Dimensions** **==> picture [467 x 490] intentionally omitted <==** **==> picture [62 x 47] intentionally omitted <==** **www.onsemi.com** **7** ## **Mechanical Dimensions** **==> picture [126 x 15] intentionally omitted <==** **----- Start of picture text -----**
FQU13N06LTU
**----- End of picture text -----**
## **Figure 17. TO251 (I-PAK), Molded, 3-Lead** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products._ **www.onsemi.com** **8** ## **Mechanical Dimensions** ## FQU13N06LTU_WS ## **Figure 18. TO-251 (I-PAK), Molded, 3-Lead, Option AA** _Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products._ **www.onsemi.com** **9** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor **N. 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