# Power MOSFET, P Channel, 100 V, 22 A, 0.125 ohm, TO-263 (D2PAK), Surface Mount ![Product image](https://novapart.co/image/farnell:2464133/) **URL**: https://novapart.co/products/FQB22P10TM/power-mosfet-p-channel-100-v-22-a-0125-ohm-to-263 **SKU**: FQB22P10TM **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.7650 **Stock**: 1000+ **Lead Time**: 113 days (indicative) ## Description Transistor Polarity:P Channel; Continuous Drain Current Id:-22A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | Lead (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | P Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 3.75W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-263 (D2PAK) | | Drain Source Voltage Vds | 100V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 22A | | Drain Source On State Resistance | 0.125ohm | | Gate Source Threshold Voltage Max | 4V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2464133/) ## **Is Now Part of** ## **To learn more about ON Semiconductor, please visit our website at www.onsemi.com** Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [65 x 8] intentionally omitted <==** **----- Start of picture text -----**
October 2013
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## **FQB22P10** **==> picture [193 x 14] intentionally omitted <==** **----- Start of picture text -----**
P-Channel QFET [®] MOSFET
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-100 V, -22 A, 125 m
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## **Description** **==> picture [51 x 10] intentionally omitted <==** **----- Start of picture text -----**
Features
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This P-Channel enhancement mode power MOSFET is • -22 A, -100 V, RDS(on) = 125 m Ω (Max) @VGS = -10 V, produced using Fairchild Semiconductor’s proprietary planar ID = -11 A stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 40 nC) resistance, and to provide superior switching performance • Low Crss (Typ. 160 pF) and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, • 100% Avalanche Tested DC motor control, and variable switching power applications. • 175 ° C Maximum Junction Temperature Rating **==> picture [50 x 96] intentionally omitted <==** **----- Start of picture text -----**
S
G
D
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**==> picture [425 x 379] intentionally omitted <==** **----- Start of picture text -----**
D
G
G
S D [2] -PAK
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol alll Parameter FQB22P10TM tC Oe Unit
VDSS Drain-Source Voltage -100 V
ID Drain Current - Continuous (TC = 25°C) -22 A
- Continuous (TC = 100°C) -15.6 A
IDM Drain Current - Pulsed (Note 1) -88 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 710 mJ
IAR Avalanche Current (Note 1) -22 A
EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ
dv/dt Pf Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns
PD Power Dissipation (TA = 25°C) * 3.75 W
Power Dissipation (TC = 25°C) 125 W
J - Derate above 25°C 0.83 W/°C
TJ, TSTG | Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL 1/8" from case for 5 seconds 300 °C
Thermal Characteristics
Symbol Parameter FQB22P10TM Unit
RJC Thermal Resistance, Junction to Case, Max. 1.2
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 oC/W
RJA
Thermal Resistance, Junction to Ambient (* 1 in [2] pad of 2 oz copper), Max. 40
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## **Thermal Characteristics** ©2000 Fairchild Semiconductor Corporation FQB22P10 Rev. C3 **1** www.fairchildsemi.com |**Package Marking and Ordering Information**
**Device Marking**
**Device**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQB22P10
FQB22P10TM
D2-PAK
330mm
24mm
800
**Electrical Characteristics**TC= 25°C unless otherwise noted
**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Unit**
**Off Characteristics**
BVDSS
Drain-Source Breakdown Voltage
VGS= 0 V, ID= -250µA
-100
--
--
V
∆BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID= -250µA, Referenced to 25°C
--
-0.1
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -100 V, VGS= 0 V
--
--
-1
µA
VDS= -80 V, TC= 125°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS= -30 V, VDS= 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS= 30 V, VDS= 0 V
--
--
100
nA
**On Characteristics**
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID= -250µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS= -10 V, ID= -11 A
--
0.096
0.125
Ω
gFS
Forward Transconductance
VDS= -40 V, ID= -11 A
--
13.5
--
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -25 V, VGS= 0 V,
f = 1.0 MHz
--
1170
1500
pF
Coss
Output Capacitance
--
460
600
pF
Crss
Reverse Transfer Capacitance
--
160
200
pF
**Switching Characteristics**
td(on)
Turn-On Delay Time
VDD= -50 V, ID= -22 A,
RG= 25Ω
--
17
45
ns
tr
Turn-On Rise Time
--
170
350
ns
~~——~~
~~eee~~
~~=~~
~~- =~~|**Package Marking and Ordering Information**
**Device Marking**
**Device**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQB22P10
FQB22P10TM
D2-PAK
330mm
24mm
800
**Electrical Characteristics**TC= 25°C unless otherwise noted
**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Unit**
**Off Characteristics**
BVDSS
Drain-Source Breakdown Voltage
VGS= 0 V, ID= -250µA
-100
--
--
V
∆BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID= -250µA, Referenced to 25°C
--
-0.1
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -100 V, VGS= 0 V
--
--
-1
µA
VDS= -80 V, TC= 125°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS= -30 V, VDS= 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS= 30 V, VDS= 0 V
--
--
100
nA
**On Characteristics**
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID= -250µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS= -10 V, ID= -11 A
--
0.096
0.125
Ω
gFS
Forward Transconductance
VDS= -40 V, ID= -11 A
--
13.5
--
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -25 V, VGS= 0 V,
f = 1.0 MHz
--
1170
1500
pF
Coss
Output Capacitance
--
460
600
pF
Crss
Reverse Transfer Capacitance
--
160
200
pF
**Switching Characteristics**
td(on)
Turn-On Delay Time
VDD= -50 V, ID= -22 A,
RG= 25Ω
--
17
45
ns
tr
Turn-On Rise Time
--
170
350
ns
~~——~~
~~eee~~
~~=~~
~~- =~~|**Package Marking and Ordering Information**
**Device Marking**
**Device**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQB22P10
FQB22P10TM
D2-PAK
330mm
24mm
800
**Electrical Characteristics**TC= 25°C unless otherwise noted
**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Unit**
**Off Characteristics**
BVDSS
Drain-Source Breakdown Voltage
VGS= 0 V, ID= -250µA
-100
--
--
V
∆BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID= -250µA, Referenced to 25°C
--
-0.1
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -100 V, VGS= 0 V
--
--
-1
µA
VDS= -80 V, TC= 125°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS= -30 V, VDS= 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS= 30 V, VDS= 0 V
--
--
100
nA
**On Characteristics**
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID= -250µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS= -10 V, ID= -11 A
--
0.096
0.125
Ω
gFS
Forward Transconductance
VDS= -40 V, ID= -11 A
--
13.5
--
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -25 V, VGS= 0 V,
f = 1.0 MHz
--
1170
1500
pF
Coss
Output Capacitance
--
460
600
pF
Crss
Reverse Transfer Capacitance
--
160
200
pF
**Switching Characteristics**
td(on)
Turn-On Delay Time
VDD= -50 V, ID= -22 A,
RG= 25Ω
--
17
45
ns
tr
Turn-On Rise Time
--
170
350
ns
~~——~~
~~eee~~
~~=~~
~~- =~~|**Package Marking and Ordering Information**
**Device Marking**
**Device**
**Package**
**Reel Size**
**Tape Width**
**Quantity**
FQB22P10
FQB22P10TM
D2-PAK
330mm
24mm
800
**Electrical Characteristics**TC= 25°C unless otherwise noted
**Symbol**
**Parameter**
**Test Conditions**
**Min**
**Typ**
**Max**
**Unit**
**Off Characteristics**
BVDSS
Drain-Source Breakdown Voltage
VGS= 0 V, ID= -250µA
-100
--
--
V
∆BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID= -250µA, Referenced to 25°C
--
-0.1
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS= -100 V, VGS= 0 V
--
--
-1
µA
VDS= -80 V, TC= 125°C
--
--
-10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS= -30 V, VDS= 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS= 30 V, VDS= 0 V
--
--
100
nA
**On Characteristics**
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID= -250µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS= -10 V, ID= -11 A
--
0.096
0.125
Ω
gFS
Forward Transconductance
VDS= -40 V, ID= -11 A
--
13.5
--
S
**Dynamic Characteristics**
Ciss
Input Capacitance
VDS= -25 V, VGS= 0 V,
f = 1.0 MHz
--
1170
1500
pF
Coss
Output Capacitance
--
460
600
pF
Crss
Reverse Transfer Capacitance
--
160
200
pF
**Switching Characteristics**
td(on)
Turn-On Delay Time
VDD= -50 V, ID= -22 A,
RG= 25Ω
--
17
45
ns
tr
Turn-On Rise Time
--
170
350
ns
~~——~~
~~eee~~
~~=~~
~~- =~~| |---|---|---|---| |td(off)
Turn-Off Delay Time||--
60|130
ns| |(Note 4)
tf
Turn-Off Fall Time||--
110|230
ns| |Qg
Total Gate Charge
VDS= -80 V, ID= -22 A,||--
40|50
nC| |VGS= -10 V
Qgs
Gate-Source Charge||--
7.0|--
nC| |(Note 4)
Qgd
Gate-Drain Charge||--
21|--
nC| |**Drain-Source Diode Characteristics and Maximum Ratings**|||| |IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-22
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-88
A
VSD
Drain-Source Diode Forward Voltage
VGS= 0 V, IS= -22 A
--
--
-4.0
V
trr
Reverse Recovery Time
VGS= 0 V, IS= -22 A,
dIF/ dt = 100 A/µs
--
110
--
ns
Qrr
Reverse Recovery Charge
--
0.6
--
µC
~~——~~|||| |**Notes:**|||| |1. Repetitive Rating : Pulse width limited by maximum junction temperature|||| |2. L = 2.2mH, IAS= -22A, VDD= -25V, RG= 25Ω,Starting TJ= 25°C|||| 3. ISD ≤ -22A, di/dt ≤ 300A/ µ s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially independent of operating temperature **2** ©2000 Fairchild Semiconductor Corporation FQB22P10 Rev. C3 www.fairchildsemi.com ## **Typical Characteristics** **==> picture [393 x 551] intentionally omitted <==** **----- Start of picture text -----**
Top : -15.0 V VGS
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V 101
101 Bottom : .5 V
175℃
25℃
100
-55℃
100 ※1. 2502. T Notes :C = 25μ s Pulse Test℃ ※2. 2501. V Notes :DS = -40Vμ s Pulse Test
10-1 100 101 10-1 2 4 6 8 10
-VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
0.5
0.4
VGS = - 10V 101
0.3
VGS = - 20V
0.2
100
175℃ 25℃
0.1 ※ Notes :
※ Note : TJ = 25℃ 1. V 2. 250GS = 0Vμ s Pulse Test
0.0 10-1
0 10 20 30 40 50 60 70 80 90 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
-ID , Drain Current [A] -VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
3500 12
3000 CCCissossrss = C = = CCgsgdds + C + Cgdgd (Cds = shorted) 10 VDS = -20V
Ciss VDS = -50V
2500
Coss 8 VDS = -80V
※ Notes :
2000 2. f = 1 MHz1. VGS = 0 V 6
1500
Crss 4
1000
2
500
※ Note : ID = -22 A
010-1 100 101 0 0 10 20 30 40 50
-VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]
, Drain Current [A]-ID , Drain Current [A]-ID
],
Ω
[
DS(on)
R
, Reverse Drain Current [A]
Drain-Source On-Resistance -IDR
Capacitance [pF]
, Gate-Source Voltage [V]
GS
-V
**----- End of picture text -----**
**Figure 5. Capacitance Characteristics** **Figure 6. Gate Charge Characteristics** **3** www.fairchildsemi.com ©2000 Fairchild Semiconductor Corporation FQB22P10 Rev. C3 **==> picture [416 x 630] intentionally omitted <==** **----- Start of picture text -----**
Typical Characteristics (Continued)
1.2 2.5
2.0
1.1
1.5
1.0
1.0
0.9 ※ Notes :
1. V2. IDGS = -250 = 0 Vμ A 0.5 ※2. I1. V Notes :DGS = -11 A = -10 V
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
TJ, Junction Temperature [oC] TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
25
Operation in This Area
is Limited by R DS(on)
102 SoG 100 µ s iS 20
1 ms
10 ms 15
101 Sa a DC s
10
100 ※ Notes :
1. TC = 25 oC 5
3. Single Pulse 2. TJ = 175 oC
10-1100 101 10 = 2 b 025 3 50 75 100 125 150 175
-VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0
EE
D = 0 .5
※ N o te s :
0 .2 1 . Z θ J C [(t) = 1 .2 ][℃] [/W] [ M a x .]
1 0 -1 0 .1 2 . D u ty F a c to r, D = t 3 . T J M - T C = P D M Z* 1θ/t 2J C [(t)]
0 .0 5
0 .0 2 PDM
0 .0 1 s in g le p u ls e t1 t2
1 0 -2
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1
Se ct t 1 , S q u a re W ion a v e P u ls e D u ra tio n [s e c ] Bu d
Figure 11. Transient Thermal Response Curve
, (Normalized) , (Normalized)
DSS DS(ON)
-BV R
Drain-Source On-Resistance
Drain-Source Breakdown Voltage
, Drain Current [A]-ID , Drain Current [A]-ID
oC/W](t), Thermal Response [
ZJC
**----- End of picture text -----**
**4** ©2000 Fairchild Semiconductor Corporation FQB22P10 Rev. C3 www.fairchildsemi.com **==> picture [463 x 612] intentionally omitted <==** **----- Start of picture text -----**
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ as DUT Qg
12V 200nF 300nF -10V
VGS VDS Qgs Qgd
DUT
IG = const. -3mA
Charge
ms
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS t on t off
RG VGS VDD VGS 10% td(on) tr td(off) tf
-10V VGS DUT
a VDS 90%
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS L EAS = ----12 L IAS2 --------------------BVBVDSSDSS- VDD
t p Time
I D
RG VDD VDD VDS (t)
ID (t)
-10V VGS DUT
IAS
t p BVDSS
FQB22P10
—
®
P-Channel QFET MOSFET
**----- End of picture text -----**
**5** ©2000 Fairchild Semiconductor Corporation FQB22P10 Rev. C3 www.fairchildsemi.com **==> picture [307 x 10] intentionally omitted <==** **----- Start of picture text -----**
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
**----- End of picture text -----**
**==> picture [392 x 597] intentionally omitted <==** **----- Start of picture text -----**
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
(N-Channel) VDD
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS D = --------------------------
Gate Pulse Period 10V
( Driver )
ee
Body Diode Reverse Current
I SD
( DUT ) IRM
di/dt
I
IFM , Body Diode Forward Current
VDS VSD
( DUT )
Body Diode VDD
Forward Voltage Drop
J Body Diode Recovery Ay dv/dt
©2000 Fairchild Semiconductor Corporation 6
FQB22P10 Rev. C3
**----- End of picture text -----**
www.fairchildsemi.com **==> picture [501 x 692] intentionally omitted <==** **----- Start of picture text -----**
10.67 -A- 10.67
9.65
1.68
4 1.00 4
9.45
9.65
8.38
10.00
1.78 MAX 2
2 0.25 MAX
PLASTIC BODY 3.80
STUB
1 3 1 3
(2.12) 1.781.14 1.05
0.99 0.25 M B A M 5.08
0.51
LAND PATTERN RECOMMENDATION
5.08
UNLESS NOTED, ALL DIMS TYPICAL
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL -B-
4.83
4.06
6.22 MIN
1.65
1.14
4 4
6.86 MIN
15.88
14.61 SEE
DETAIL A
2
2
3 1 3 1
BACK VIEW - DIODE PRODUCTS VERSION NOTES: UNLESS OTHERWISE SPECIFIED
ALTERNATIVE SUPPLIER DETAIL A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
GAGE PLANE DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
0.74 D) LOCATION OF THE PIN HOLE MAY VARY
0.25 0.33 �� (LOWER LEFT CORNER, LOWER CENTER
�� AND CENTER OF THE PACKAGE).
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
2.79 0.10 B F) FILENAME: TO263A02REV8
1.78 ��
0.25 MAX (5.38) ��
SEATING
PLANE
���������������������
SCALE: 2X
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