# IGBT Module, PIM Three Phase Input Rectifier, 75 A, 1.85 V, 385 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2709930/)

**URL**: https://novapart.co/products/FP75R12KT4BOSA1/igbt-module-pim-three-phase-input-rectifier-75-a
**SKU**: FP75R12KT4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €70.0400
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:385W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPIM 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 385W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 75A |
| Power Dissipation Pd | 385W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 75A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709930/)

## FP75R12KT4 

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**----- Start of picture text -----**<br>
VCES = 1200V<br>IC nom = 75A / ICRM = 150A<br>**----- End of picture text -----**<br>


- Hilfsumrichter 

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- Motorantriebe 

- Servoumrichter 

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- CEsat 

- • T vj op = 150°C • VCEsat mit 

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- Kupferbodenplatte 

- • Lötverbindungstechnik • Standardgehäuse 

- 

- 

- 

- 

- 

- CEsat 

- • T vj op = • VCEsat 

- 

- 

- 

- 

- 

**Digit** 

Datasheet www.infineon.com 

2018-03-02 

FP75R12KT4 

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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 95°C, Tvj max= 175°C|IC nom|75|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|150|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,85<br>2,15<br>2,25|2,15|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 2,40 mA, VCE= VGE, Tvj= 25°C|VGEth|5,20|5,80|6,40|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V|QG||0,57||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||10||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||4,30||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,16||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||1,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 75 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 1,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,16<br>0,17<br>0,17||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 75 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 1,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,03<br>0,04<br>0,04||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 75 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 1,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,34<br>0,43<br>0,45||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 75 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 1,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,08<br>0,15<br>0,17||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 75 A, VCE= 600 V, Lσ= 40 nH<br>di/dt = 2500 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 1,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||3,10<br>6,60<br>7,65||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 75 A, VCE= 600 V, Lσ= 40 nH<br>du/dt = 3600 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 1,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||4,20<br>6,40<br>7,20||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||270||A|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||0,390|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,130||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



2 

V�3.0 2018-03-02 

Datasheet 

FP75R12KT4 

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## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|75|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|960|||A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||88,0<br>89,0<br>90,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||7,30<br>13,0<br>14,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,65<br>4,60<br>5,65||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,620|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,205||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|<br>80|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|140|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|600<br>470|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1800<br>1100|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 75 A|VF||1,15||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,650|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,215||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



3 

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Datasheet 

FP75R12KT4 

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## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|1200||V|
|---|---|---|---|---|---|---|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 95°C, Tvj max= 175°C|IC nom|50|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|100|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,85<br>2,15<br>2,25|2,15|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 1,60 mA, VCE= VGE, Tvj= 25°C|VGEth|5,20|5,80|6,40|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V|QG||0,38||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||4,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||2,80||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,10||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||1,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 15Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,16<br>0,17<br>0,17||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 15Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,03<br>0,04<br>0,04||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 15Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,33<br>0,43<br>0,45||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 15Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,08<br>0,15<br>0,17||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 50 A, VCE= 600 V, Lσ= 20 nH<br>VGE= -15 / 15 V, RGon= 15Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||5,70<br>7,70<br>8,40||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 50 A, VCE= 600 V, Lσ= 20 nH<br>VGE= -15 / 15 V, RGoff= 15Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||2,80<br>4,30<br>4,80||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 125°C<br>tP ≤10 µs,|ISC||180||A|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||0,540|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,245||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



V�3.0 2018-03-02 

Datasheet 

4 

FP75R12KT4 

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## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|25|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>80,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||39,0<br>40,0<br>41,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,40<br>4,10<br>4,40||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,90<br>1,50<br>1,70||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,35|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,610||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

V�3.0 2018-03-02 

Datasheet 

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FP75R12KT4 

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## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||7,5<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.<br>max.|||
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||40||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||4,00<br>3,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Gewicht<br>Weight||G||300||g|



6 

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FP75R12KT4 

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**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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150 150<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>135 T vj  = 150°C 135 V GE  = 15V<br>VGE = 13V<br>VGE = 11V<br>120 120 V GE  =   9V<br>105 105<br>90 90<br>75 75<br>60 60<br>45 45<br>30 30<br>15 15<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�1.1� Ω ,�RGoff�=�1.1� Ω ,�VCE�=�600�V 

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150 30<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>135 T vj  = 150°C E on , T vj  = 150°C<br>E off , T vj  = 150°C<br>25<br>120<br>105<br>20<br>90<br>75 15<br>60<br>10<br>45<br>30<br>5<br>15<br>0 0<br>5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


V�3.0 2018-03-02 

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7 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =75A,V CE =600V<br>20 1<br>Eon, Tvj = 125 ° C ZthJC : IGBT<br>Eoff, Tvj = 125°C<br>18 E on , T vj  = 150°C<br>Eoff, Tvj = 150°C<br>16<br>14<br>12 Pape pata a tor A<br>7<br>“<br>10 ye 0,1<br>711YY<br>8<br>6<br>4<br>i: 1 2 3 4<br>2 ri[K/W]: 0,0234 0,1287 0,1248 0,1131<br>τ i[s]: 0,01 0,02 0,05 0,1<br>0 0,01<br>0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


## **(RBSOA)** 

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**----- Start of picture text -----**<br>
IF =f(V F)<br>**----- End of picture text -----**<br>


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IC =f(V CE)<br>VGE =415V,R Goff =1.1 Ω ,T vj =150°C<br>165 150<br>Tvj = 25°C<br>150 135 T T vjvj = 125°C  = 150°C<br>135<br>120<br>IC, Modul<br>IC, Chip<br>120<br>105<br>105<br>90 f/<br>90<br>75<br>75<br>60<br>60<br>45<br>45<br>e/ji]<br>30<br>30<br>15 15<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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Erec =f il F) Erec =f(R G)<br>RGon =1.1 Ω ,V CE =600V IF =75A,V CE =600V<br>8 8<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>7 7<br>a [aa] [mT]<br>=<br>6 Za 6<br>7 [a] ~<br>7 ~~<br>~<br>5 7 5 ™~ ~~<br>4 //7 4 7S >~ ~~N<br>/ ~<br>/<br>/<br>3 7 3<br>/<br>2 / 2<br>/<br>i<br>1 1<br>0 0<br>0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 18 20<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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ZthJC =f (t) IF =f(V F)<br>1 pot TT ZthJC : Diode TT] 150 Tvj = 25°C |<br>Tvj = 150°C<br>135<br>Sa |} [Ee |<br>Tl |<br>bev TT |<br>120<br>105<br>90 i<br>|<br>0,1 / 75<br>60<br>‘<br>45<br>30<br>i: 1 2 3 4<br>ri[K/W]: 0,0372 0,2046 0,1984 0,1798 15<br>τ i[s]: 0,01 0,02 0,05 0,1<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>t [s] VF [V]<br> [K/W]thJC  [A]IF<br>Z<br>**----- End of picture text -----**<br>


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**Ausgangskennlinie�IGBT,�Brems-Chopper�(typisch) output�characteristic�IGBT,�Brake-Chopper�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Durchlasskennlinie�der�Diode,�Brems-Chopper�(typisch) forward�characteristic�of�Diode,�Brake-Chopper�(typical)** IF�=�f�(VF) 

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100 45<br>Tvj = 25°C Tvj = 25°C<br>90 T T vjvj = 125°C  = 150°C 40 T T vj vj  = 125°C  = 150 ° C<br>80<br>35<br>70<br>30<br>60<br>25<br>50<br>20<br>40<br>15<br>30<br>10<br>20<br>10 5<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


**NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T) 

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100000<br>Rtyp<br>10000<br>1000<br>100<br>0 10 20 30 40 50 60 70 80 90 100110120130140<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


10 

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FP75R12KT4 

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## **Schaltplan�/�Circuit�diagram** 

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J<br>**----- End of picture text -----**<br>


## **Gehäuseabmessungen�/�Package�outlines** 

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11 

V�3.0 2018-03-02 

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## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/FP75R12KT4BOSA1/igbt-module-pim-three-phase-input-rectifier-75-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fp75r12kt4bosa1/igbt-module-n-ch-1-2kv-75a/dp/2709930)
---

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