# IGBT Module, PIM Three Phase Input Rectifier, 50 A, 1.85 V, 280 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2377260/)

**URL**: https://novapart.co/products/FP50R12KT4GBOSA1/igbt-module-pim-three-phase-input-rectifier-50-a
**SKU**: FP50R12KT4GBOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €60.1000
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:NPN; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:280W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case St

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 35Pins |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 280W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Transistor Polarity | NPN |
| Dc Collector Current | 50A |
| Power Dissipation Pd | 280W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2377260/)

IGBT-模块 IGBT-modules 

## FP50R12KT4G 

VCES = 1200V IC nom = 50A / ICRM = 100A 

## **典型应用** 

- 辅助逆变器 

- 电机传动 

- • 伺服驱动器 

- 

- 

- 

## **电气特性** 

- 低开关损耗 

- CEsat 

- • 沟槽栅IGBT4 

- T 

- VCEsat 

- 

- CEsat 

- 

- T 

- VCEsat 

## **机械特性** 

- 2O3 

- 高功率循环和温度循环能力 

- • 集成NTC温度传感器 

- 铜基板 

- • 焊接技术 

- • 符合RoHS • 标封装 

- Al2O3 

- 

- 

- 

- 

- 

- 

1 

> IGBT-模块IGBT-modules FP50R12KT4G 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP50R12KT4G<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-11-11<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>280<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 1,70 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,38<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>4,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,80<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,10<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,06<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,032<br>0,034<br>0,037<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,28<br>0,35<br>0,38<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,11<br>0,23<br>0,25<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 1400 A/µs (Tvj= 150°C)<br>RGon= 15Ω<br>Eon<br>3,50<br>5,20<br>5,70<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3500 V/µs (Tvj= 150°C)<br>RGoff= 15Ω<br>Eoff<br>2,80<br>4,50<br>5,10<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>180<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,54<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,135<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP50R12KT4G 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|50|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|560|||A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||39,0<br>44,0<br>46,5||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,30<br>7,80<br>9,00||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,30<br>2,70<br>3,10||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,81|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,20||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **二极管,整流器�/�Diode,�Rectifier 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|70|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|80|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1000<br>685|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 50 A|VF||1,05||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,85|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,21||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



|preparedby:CM|dateofpublication:2013-11-11|
|---|---|
|approvedby:RS|revision:3.0|



3 

> IGBT-模块IGBT-modules FP50R12KT4G 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�制动-斩波器�/�IGBT,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP50R12KT4G<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-11-11<br>revision:3.0<br>**IGBT,制动-斩波器/IGBT,Brake-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>25<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>160<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,85 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,45<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,05<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 37Ω<br>td on<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 37Ω<br>tr<br>0,052<br>0,055<br>0,055<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 37Ω<br>td off<br>0,21<br>0,32<br>0,36<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 37Ω<br>tf<br>0,12<br>0,19<br>0,22<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 250 A/µs (Tvj= 150°C)<br>RGon= 37Ω<br>Eon<br>2,20<br>3,50<br>3,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3300 V/µs (Tvj= 150°C)<br>RGoff= 37Ω<br>Eoff<br>1,40<br>2,30<br>2,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>90<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,95<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,235<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



4 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP50R12KT4G 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管，制动-斩波器�/�Diode,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|15|A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|30|A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|48,0<br>|A²s|



## **特征值�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 15 A, - diF/dt = 250 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||11,0<br>13,5<br>14,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 15 A, - diF/dt = 250 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,20<br>2,20<br>2,50||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 15 A, - diF/dt = 250 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,50<br>0,90<br>1,00||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||1,50|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,37||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定|||||||



Specification�according�to�the�valid�application�note. 

prepared�by:�CM date�of�publication:�2013-11-11 approved�by:�RS revision:�3.0 

5 

IGBT-模块 IGBT-modules 

## FP50R12KT4G 

|#R_<br>| Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>E44 (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3||kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0||mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 200<br>typ.<br>max.<br>~~ee~~||mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|杂散电感,模块||LsCE||40||nH|
|模块引线电阻,端子-芯片<br>最大结温<br>terminals ~~- chip~~<br>Maximum junction temperature|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>aE BS<br>ll2)-H WEE /inverter, brake-chopper<br>Ties / rectifier|RCC'+EE'<br>RAA'+CC'<br>4,00<br>3,00<br>Tvj max<br>175<br>150<br>~~tt ff~~||||mΩ<br>°C<br>°C|
|在开关状态下温度<br>Temperature under switching conditions|aS3S 2)-4 WEB /inverter, brake-chopper<br>Ties / rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|储存温度<br>模块安装的安装扭距<br>~~Storage temperature~~<br>Mounting torque for modul mounting|~~ee ~~<br>$Ree MS~~RIAN~~<br>WAFHT<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|重量<br>Weight||G||300||g|



6 

IGBT-模块 IGBT-modules 

## FP50R12KT4G 

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IC =f(V CE) IC =f(V CE)<br>VGE 15 V Tvj = orc<br>100 100<br>Tvj = 25°C VGE = 19V<br>90 Tvj = 125°C 90 VGE = 17V<br>FL Tvj = 150°C L eev7 Fee V s GE = 15V | Ll / 7<br>VGE = 13V<br>80 ra 80 | VGE = 11V iacoueenfee le<br>VGE =   9V<br>e e e ee<br>70 70<br>PPT<br>60 yee EE 60 ee<br>Pit<br>50 AR EE 50 OE ev<br>40 Pio d/Pere 40 ay A<br>vA<br>30 PPL VARtyELE 30 aeee<br>ee ee<br>20 20<br>10 10<br>La 4<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


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IC =f(V GE) Eon =f(1),E C off =f( C)<br>VCE ay, VGE Oo R Gon Us Ω ,R Goff =15 Ω ,V CE =600V<br>100 18<br>Tvj = 25°C Eon, Tvj = 125°C<br>90 r Tvj = 125°C n 16 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>Ee y a<br>Eoff, Tvj = 150°C<br>ane<br>80<br>P E 14<br>70 | LR ee e<br>12<br>AR eee<br>60<br>10<br>50 PPL)| Seeee<br>8 beRR EAC<br>COP) ee<br>40<br>po<br>6<br>FEET ae<br>30<br> ZTE)| «GEER gees<br>Pit 4 i e e eee<br>20 iA | |) P e<br>10 eeJ 2 P| TL cbr<br>0 Perwe ET TE) 0 PTeeTT TT<br>5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 70 80 90 100<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


7 

IGBT-模块 IGBT-modules 

## FP50R12KT4G 

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E ee on G off RO G)  (typical) rans ZthJC  impedance IGBT, Inverter<br>VGE oy | C =50A,V CE =600V<br>30 1<br>28 S Eon, Tvj = 125°C ST ea ZthJC : IGBT<br>Eoff, Tvj = 125°C<br>26 Eon, Tvj = 150°C<br>E Eoff, Tvj = 150°C C<br>24 He s EE | ee] OI<br>22 PET ee TTT<br>20<br>PET ETT ET EE eet PTTAIEEE<br>18 PTT TTT TTT TTT ee LEV ZCI ETI LTT<br> TT TT eT /<br>16<br>LUTTE TT TT ere TTT y<br>0,1<br>14<br>12 RePITT eee aaa ORE es meses ieeeties<br>BERR eA Poe CT CT<br>10<br>8 TTT LAyT ZARrrr tt PVEa ll<br>PRATT a a ae<br>6<br>4 2esssssssessereep 7 i:    1    2    3    4<br>ri[K/W]:   0,0324   0,1782   0,1728   0,1566<br>2 PEEP / τ i[s]:    0,01    0,02    0,05    0,1<br>PLETE EEE EEE EEE a aa<br>0 0,01<br>0 15 30 45 60 75 90 105 120 135 150 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA ) Fa mESst REGS ( BB)<br>I reverse C CE  bias )  safe operating area IGBT,Inverter (RBSOA) forward IF F) characteristic of Diode, Inverter (typical)<br>VGE “i sV.R Goff =15 Ω ,T vj =150°C WV<br>120 100<br>IC, Modul Tvj = 25°C<br>110 [= IC, Chip Je 90 mH Tvj = 125°C T ill jo lk<br>Tvj = 150°C<br>100<br>h—— | | | Epp<br>80<br>90<br>70<br>ee<br>80<br>60<br>70<br>60 50<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>ee 10 ee eee<br>100 0 p f ery | ft |<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


8 

## IGBT-模块 IGBT-modules 

## FP50R12KT4G 

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Erec =f (I F) Erec =f(R G)<br>RGon Jt Ω »,V CE =600V IF -50RV CE = 600 V<br>4,0 4,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>3,5 Eo tL 3,5<br>3,0 3,0<br>2,5 2,5<br>Prif EEE LENSENPS<br>2,0 2,0<br>IZLE ELE) LEP<br>1,5 1,5<br>VELL EEL LLLP RT<br>1,0 1,0<br>ALTE Tt 4_|-<br>0,5 ELE EL) 0,5 ELA<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 90 100 0 15 30 45 60 75 90 105 120 135 150<br>IF [A] RG [ Ω ]<br>PAM RS EES Fame —RE Sms ( BB)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJC =f (t) IF =f(V F)<br>10 100<br>(ene —<—<—<br>ZthJC : Diode Tvj = 25°C<br>or$F PTaa E TTee SIP oelTTT] 908070 (ee TTTTTT Tvj = 150°C  TTDIL TT LLL TTT<br>UMN CELINE LAE ELT |<br>1<br>60<br>rTIaTT aeetTee T ee ll 50 PET] | TLE Ly ALE‘|<br>Ba ann ee A 40 PET YT | TLE LL RAL<br>0,1 ee<br>PAH 30<br>rT Vi Ti TT 1<br>PA TTUTTTT TT] 20 PEEL} | |] ARE, /<br>i:    1    2    3    4<br>7)PN CA [ r τ 2 ii[K/W]:   [s]:    0,0486   0,01    0,2673   0,02    T 0,2592   0,05    f 0,2349   0,1    10 PTT TTY PLR2  VET<br>0,01 LM, omc SEE 0 EE LA E<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC  [A]IF<br>Z<br>**----- End of picture text -----**<br>


9 

IGBT-模块 IGBT-modules 

## FP50R12KT4G 

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IC =f(V CE) IF =f(V F)<br>VGE =15V<br>50 27<br>Tvj = 25°C Tvj = 25°C<br>45 Tvj = 125°C 24 Tvj = 125°C<br>F Tvj = 150°C ee ee Pe Tvj = 150°C<br>40<br>21<br>35<br>18<br>30<br>15<br>Lypi PTET TEA<br>25<br>Caer on 12 PCE<br>20<br>9<br>15<br>TEaE SERRE Annee<br>6<br>10<br>ee J<br>5 PTTL 3 ee<br>0 0<br>PI7 TTT | Lee<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br>REBARBB BEBE<br>NTC-Thermistor-temperature characteristic (typical)<br>R= f(T)<br>100000<br>_—— Rtyp f[<br>(Rar ce<br>a<br>p t<br>10000 Ree<br>PNP<br>ER Ne ee<br>a Ne ee ee<br>pot NE<br>pp Nf<br>1000 ERNE<br>eea ee<br>po a<br>(a NN<br>a ee ee ee ee<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A]  [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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11 

IGBT-模块 IGBT-modules 

## FP50R12KT4G 

## **使用条件和条款** 

使用条件和条款 

产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 

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12 



## Links

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- [Supplier page](https://es.farnell.com/infineon/fp50r12kt4gbosa1/igbt-module-npn-1-85v-50a/dp/2377260)
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