# IGBT Module, Three Phase Inverter, 50 A, 1.85 V, 280 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726170/)

**URL**: https://novapart.co/products/FP50R12KT4GB15BOSA1/igbt-module-three-phase-inverter-50-a-185-v-280-w
**SKU**: FP50R12KT4GB15BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €67.6900
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:280W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPIM 3 |
| Igbt Technology | IGBT 4 |
| Igbt Termination | Press Fit |
| Power Dissipation | 280W |
| Igbt Configuration | Three Phase Inverter |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 50A |
| Power Dissipation Pd | 280W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726170/)

IGBT-模块 IGBT-modules 

## FP50R12KT4G_B15 

VCES = 1200V IC nom = 50A / ICRM = 100A 

## **典型应用** 

- 辅助逆变器 

- 电机传动 

- 伺服驱动器 

- 

- 

- 

## **电气特性** 

- 低开关损耗 

- CEsat 

- T 

- VCEsat 

- 

- CEsat 

- T 

- VCEsat 

## **机械特性** 

- 高功率循环和温度循环能力 

- • 集成NTC温度传感器 • 铜基板 • 焊接技术 

- 标封装 

- 

- 

- 

- 

- 

1 

IGBT-模块 IGBT-modules FP50R12KT4G_B15 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP50R12KT4G_B15<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-05<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>280<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 1,70 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,38<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>4,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,80<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,10<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, di/dt = 1400 A/µs (Tvj= 150°C)<br>RGon= 15Ω<br>Eon<br>5,70<br>7,70<br>8,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 15Ω<br>Eoff<br>2,80<br>4,30<br>4,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>180<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,54<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,145<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

IGBT-模块 IGBT-modules FP50R12KT4G_B15 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter** 

## **最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|50|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|560|||A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||54,0<br>60,0<br>63,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,50<br>8,80<br>10,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,70<br>3,00<br>3,70||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,81|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,215||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **二极管,整流器�/�Diode,�Rectifier 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|80|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|100|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|600<br>470|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1800<br>1100|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 75 A|VF||1,15||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,65|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,17||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-05<br>revision:3.0|||||||
|preparedby:AS|dateofpublication:2013-11-05||||||
|approvedby:RS|revision:3.0||||||



3 

IGBT-模块 IGBT-modules FP50R12KT4G_B15 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�制动-斩波器�/�IGBT,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP50R12KT4G_B15<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-05<br>revision:3.0<br>**IGBT,制动-斩波器/IGBT,Brake-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>25<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>160<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,85 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,45<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,05<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 37Ω<br>td on<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 37Ω<br>tr<br>0,03<br>0,04<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 37Ω<br>td off<br>0,34<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 37Ω<br>tf<br>0,05<br>0,07<br>0,08<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V<br>RGon= 37Ω<br>Eon<br>2,00<br>2,65<br>2,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V<br>RGoff= 37Ω<br>Eoff<br>1,40<br>2,20<br>2,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>90<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,95<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,25<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



4 

IGBT-模块 IGBT-modules FP50R12KT4G_B15 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管，制动-斩波器�/�Diode,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|15|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|30|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|48,0|||A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||20,0<br>22,0<br>23,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,50<br>2,50<br>2,70||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,55<br>0,90<br>1,00||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||1,50|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,40||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�AS date�of�publication:�2013-11-05 approved�by:�RS revision:�3.0 

5 

IGBT-模块 IGBT-modules 

## FP50R12KT4G_B15 

|#R_<br>| Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>E44 (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3||kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0||mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 200<br>typ.<br>max.<br>~~ee~~||mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|杂散电感,模块||LsCE||60||nH|
|模块引线电阻,端子-芯片<br>最大结温<br>terminals ~~- chip~~<br>Maximum junction temperature|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>aE BS<br>ll2)-H WEE /inverter, brake-chopper<br>Ties / rectifier|RCC'+EE'<br>RAA'+CC'<br>4,00<br>2,00<br>Tvj max<br>175<br>150<br>~~tt ff~~||||mΩ<br>°C<br>°C|
|在开关状态下温度<br>Temperature under switching conditions|aS3S 2)-4 WEB /inverter, brake-chopper<br>Ties / rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|储存温度<br>模块安装的安装扭距<br>~~Storage temperature~~<br>Mounting torque for modul mounting|~~ee ~~<br>$Ree MS~~RIAN~~<br>WAFHT<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|重量<br>Weight||G||300||g|



6 

## IGBT-模块 IGBT-modules 

## FP50R12KT4G_B15 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>100 a 7 100 es | [ov<br>Tvj = 25°C VGE = 19V<br>90 Tvj = 125°C 90 VGE = 17V<br>fFL Tvj = 150°C yle | VGE = 15V Li Aa | be<br>VGE = 13V<br>80 ee 80 VGE = 11V ane<br>VGE =   9V<br>70 70<br>Pt a PE ee<br>PEP) E ee<br>60 60<br>50 50<br>PPou Awa TE EEey ee<br>40 SRR ,ARE eee 40 i;22a4<br>30 pi EE 30 EevA<br>vel ET<br>20 20<br>ee eeee<br>10 10<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feFStE IGBT, HaSeS (FRA) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =15 Ω ,R Goff =15 Ω ,V CE =600V<br>100 20<br>Tvj = 25°C Eon, Tvj = 125°C<br>90 | Tvj = 125°C ie 18 Eoff, Tvj = 125°C oo<br>Tvj = 150°C Eon, Tvj = 150°C<br>Ee i a<br>Eoff, Tvj = 150°C<br>eeea e e | [e SEne<br>80 16<br>eee e ee<br>70 P p 14 Oe<br>60 ee) 12 a ee eee [ee]<br>CEPT) aFREERee ee eee ARE<br>50 10<br>SRR<br>40 8 ee ee ee /<br>2 ee eee ee eee<br>S00 ee<br>30 6<br>20 4<br>pit} lA 4008Tt eo eeeeoeeee<br>e/a a ee ee ee<br>10 2<br>ee Rr ee eee<br>0 0<br>7 eeee<br>5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 70 80 90 100<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


7 

## IGBT-模块 IGBT-modules 

## FP50R12KT4G_B15 

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**----- Start of picture text -----**<br>
switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =50A,V CE =600V<br>20 SS 7” 1 ee<br>Eon, Tvj = 125°C ZthJC : IGBT<br>18 Z Eoff, Tvj = 125°C Wold] ) Lerae | Ht PT TTT  c TTT o TTT<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>16 Ene e Ween o4geceL> PCIee Titi TT<br>14 Py} | ty ee RP] Ey AH ae |<br>12 Sorereecet ee) EI<br>Eee nedTEE /|<br>10 0,1<br>8 ETT EHH SETHEEES<br>a See watt sa ni<br>6 Sea FV i<br>4 |} fit ff{} Pts b ss AIa | a Il<br>i:    1    2    3    4<br>2 TTP TPT EFFI) | r τ CLUE ii[K/W]:   [s]:    0,0324   0,01    EEE 0,1782   0,02    0,1728   0,05    0,1566   0,1    CC L<br>ELL LAN oe col l<br>0 PEE [EEE] 0,01 PC<br>0 20 40 60 80 100 120 140 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA ) TE attt —i Bases ( SRA)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =15 Ω ,T vj =150°C<br>110 100<br>IC, Modul Tvj = 25°C<br>100 I C , Chip 90 Tvj = 125°C<br>a e Tvj = 150°C e<br>90<br>80<br>80<br>a po | pp<br>70<br>70<br>60<br>60<br>50<br>50<br>40<br>40<br>30<br>30<br>ee ae<br>20<br>20 ee ee ee eee ef<br>10 ee 10 esVA eee<br>0 PoE | | 0 B ee Zane<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FP50R12KT4G_B15 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon Jt Ω »,V CE =600V IF -50RV CE = 600 V<br>5,0 5,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>4,5 FELee Erec, Tvj = 150°C 4,5 IeF Erec, Tvj = 150°C EL<br>4,0 4,0<br>3,5 3,5<br>3,0 Pa Se] = 3,0 ELLER<br>2,5 2,5<br>tla ae [PEETT<br>Pir at Ey BRReEESRR RG E SRD<br>2,0 2,0<br>a A pe RALLY<br>1,5 a ee 1,5 eee<br>1,0 PY EEE EEL} 1,0 LEEEEEEEE<br>EEEEEEEEEE ELL<br>0,5 AAT EE ET [EEL}] 0,5 EE LL<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140<br>IF [A] RG [ Ω ]<br>PAM RS EES Fame —RE Sms ( BB)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJC =f (t) IF =f(V F)<br>10 150<br>(ene —<—<br>ZthJC : Diode Tvj = 25°C<br>or$F SIP o 135 Fe Tvj = 150°C Lei<br>aPT E TT TTT] ee / ee<br>120<br>a ee el 105 PrP Ty RP<br>1<br>a ee 90<br>PCrTaTT 7aeetTee T ee ll 75 P| tf tL ARE ff<br>Ba ann ee A 60 Po) tf | PER Eff<br>0,1 LALIT I<br>A 2 2 45<br>rT Vi TiTT<br>P ATUTAH 30 PT TT Tay yy]<br>Toi T T T]<br>i:    1    2    3    4<br>PN r τ ii[K/W]:   [s]:    ~=ftté‘(sUDtMS 0,0486   0,01    0,2673   0,02    0,2592   0,05    0,2349   0,1    CO;*«CdC 15 LL<br>0,01 LM, omc Tf 0 SEY’ | |<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC  [A]IF<br>Z<br>**----- End of picture text -----**<br>


9 

IGBT-模块 IGBT-modules 

## FP50R12KT4G_B15 

**==> picture [486 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IF =f(V F)<br>VGE =15V<br>50 27<br>Tvj = 25°C Tvj = 25°C<br>45 Tvj = 125°C 24 Tvj = 125°C<br>FEW Tvj = 150°C yle) f Tvj = 150°C e<br>40<br>21<br>35<br>18<br>30<br>15<br>po Pete Ce<br>25<br>feSe 12 ey<br>20<br>9<br>15<br>eeoe itt aE<br>6<br>10<br>ee eee é<br>5 PPAR) 3 Le ee<br>0 0<br>PIA TTT TT | Lee<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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100000<br>_—— Rtyp f[<br>(Rar ce<br>a<br>p t<br>10000<br>Kp [Pt]<br>PNP<br>ER Ne ee<br>a Ne ee ee<br>po NN<br>pp Nf<br>1000 Sea a<br>po NN<br>(a<br>poNN<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


10 

## 技术信息�/�Technical�Information 

IGBT-模块 IGBT-modules FP50R12KT4G_B15 

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## **接线图�/�circuit_diagram_headline** 

## **封装尺寸�/�package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�AS approved�by:�RS 

date�of�publication:�2013-11-05 revision:�3.0 

11 

## IGBT-模块 IGBT-modules 

## FP50R12KT4G_B15 

## **使用条件和条款** 

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12 



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---

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