# IGBT Module, PIM Three Phase Input Rectifier, 50 A, 1.85 V, 280 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3775909/)

**URL**: https://novapart.co/products/FP50R12KT4BPSA1/igbt-module-pim-three-phase-input-rectifier-50-a
**SKU**: FP50R12KT4BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €50.0600
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPIM 2 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Solder |
| Power Dissipation | 280W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Dc Collector Current | 50A |
| Power Dissipation Pd | 280W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3775909/)

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FP50R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

EconoPIM™2�Modul�mit�Trench/Feldstopp�IGBT4�und�Emitter�Controlled4�Diode�� EconoPIM™2�module�with�trench/fieldstop�IGBT4�and�Emitter�Controlled4�diode�� 

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FP50R12KT4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EconoPIM™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode<br>EconoPIM™2modulewithtrench/fieldstopIGBT4andEmitterControlled4diode<br>preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>280<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,70 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,38<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>4,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,80<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,10<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, di/dt = 1400 A/µs (Tvj= 150°C)<br>RGon= 15Ω<br>Eon<br>5,70<br>7,70<br>8,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 15Ω<br>Eoff<br>2,80<br>4,30<br>4,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>180<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,54<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,295<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

> IGBT-ModuleIGBT-modules FP50R12KT4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|560|||A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||54,0<br>60,0<br>63,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,50<br>8,80<br>10,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,70<br>3,00<br>3,70||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,81|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,44||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|70|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|80|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1000<br>685|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 50 A|VF||1,05||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,85|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,465||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0|||||||
|preparedby:AS|dateofpublication:2013-11-04||||||
|approvedby:RS|revision:2.0||||||



2 

> IGBT-ModuleIGBT-modules FP50R12KT4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FP50R12KT4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>25<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>160<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,85 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,45<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,05<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 37Ω<br>td on<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 37Ω<br>tr<br>0,03<br>0,04<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 37Ω<br>td off<br>0,34<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 37Ω<br>tf<br>0,05<br>0,07<br>0,08<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 37Ω<br>Eon<br>2,00<br>2,65<br>2,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 37Ω<br>Eoff<br>1,40<br>2,20<br>2,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>90<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,95<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,52<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



3 

> IGBT-ModuleIGBT-modules FP50R12KT4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|15|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|30|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|48,0<br>|A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||20,0<br>22,0<br>23,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,50<br>2,50<br>2,70||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,55<br>0,90<br>1,00||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,50|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,82||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0 

4 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FP50R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||7,5|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,02||K/W|
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||35||nH|
|HöchstzulässigeSperrschichttemperatur<br>Maximumjunctiontemperature|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj max|||175<br>150|°C<br>°C|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm|
|Gewicht<br>Weight||G||180||g|



prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0 

5 

## IGBT-Module IGBT-modules 

## FP50R12KT4 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>100 a 7 100 es | [ov<br>Tvj = 25°C VGE = 19V<br>90 Tvj = 125°C Tepe} a 90 | VGE = 17V L i Aaaa | be<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>80 ee | 80 VGE = 11V Le<br>VGE =   9V<br>Pt a PE e e<br>70 70<br>PP ye: E e—<br>60 fe 60 —<br>50 50<br>PPou Awa de TE EEey ee<br>40 SRR ,ARE eee 40 i;22a4<br>30 Seee “ eee eee) 30 Ly 1) vAcee<br>20 20<br>eeee<br>10 10<br>PTLET PT gee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =15 Ω ,R Goff =15 Ω ,V CE =600V<br>100 20<br>Tvj = 25°C Eon, Tvj = 125°C<br>90 | Tvj = 125°C ie 18 Eoff, Tvj = 125°C oo<br>Tvj = 150°C Eon, Tvj = 150°C<br>Ee i a<br>Eoff, Tvj = 150°C<br>BS a TC) fe [e Feane<br>80 16<br>70 R e e ee 14 Oe a<br>PPA FREER<br>60 12 a ee eee [ee]<br>CEPT) aFREERee ee eee ARE<br>50 10<br>SRR<br>40 8 ee ee ee /<br>2 ee eee ee eee<br>S00 ee<br>30 6<br>20 i ee4008 eo 4  eeee(romaeee<br>e/a a ee ee ee<br>10 2<br>0 eet 0 Rr eeeee<br>7 eeee<br>5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 70 80 90 100<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FP50R12KT4 

**==> picture [493 x 606] intentionally omitted <==**

**----- Start of picture text -----**<br>
switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =50A,V CE =600V<br>20 a Eon, Tvj = 125°C a7 1 ZthJC : IGBT<br>18 Z Eoff, Tvj = 125°C Wold] ) Ler H— | SOee E e e ee<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>16 Ena Ween LgeceL> PCI a a | |<br>14 Py yt | flere]eaby IPL TaeEI e ETT<br>12 tt van UEAAI CT TUT<br>caer 7<br>thee<br>10 0,1<br>8 Pari Z| ELLttLLLTT Ey] PEAI<br>7<br>6 Sea oe 0<br>Hicbeeeee TALI ETN<br>4<br>i:    1    2    3    4<br>2 PLE EE EE EEee C r τ ii[K/W]:   [s]:    Toon 0,0324   0,01    ATH 0,1782   0,02    0,1728   0,05    0,1566   0,1<br>0 0,01<br>0 20 40 60 80 100 120 140 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =15 Ω ,T vj =150°C<br>110 100<br>IC, Modul Tvj = 25°C<br>100 I C , Chip 90 Tvj = 125°C<br>Tvj = 150°C<br>ET FO Eee<br>90<br>80<br>80<br>FREE SS E<br>70<br>70<br>60<br>60<br>50<br>50<br>40<br>40<br>30<br>30<br>a ae<br>20<br>20<br>ee ee eee #/<br>10 ee 10 ee VA eee<br>ee<br>0 0<br>eee eee<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


7 

## IGBT-Module IGBT-modules 

## FP50R12KT4 

**==> picture [480 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =15 Ω ,V CE =600V IF =50A,V CE =600V<br>5,0 5,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>4,5 E Erec, Tvj = 150°C tt 4,5 E Erec, Tvj = 150°C e<br>4,0 4,0<br>3,5 3,5<br>3,0 3,0<br>2,5 2,5<br>tla at BRRe SRR RG ESRD<br>2,0 Pierre EE 2,0 ELE PRL<br>PATEL LEE<br>1,5 WA 1,5 EEE EE<br>1,0 Vite Ett yy 1,0 ELLE<br>ELE<br>0,5 AAT [TT][ EET] 0,5 Ee<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


> IFF =f(V F)) 

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**----- Start of picture text -----**<br>
ZthJC = f (t) IFF =f(V F))<br>10 ——— er 100 1<br>ZthJC : Diode Tvj = 25°C<br>o H#H— o Fee TT 90 (ee Tvj = 150°C<br>PT TT TTTTTT<br>| | | ll 8070 PTTP| [| PPL|<br>IMT /<br>1<br>a a ee ee ee e e ee<br>a 60<br>PTPTa TTTTT TTTaeTel T TTT 50 PET] | TLE Ly ALEt<br>40<br>SAAD) MART RTI PET YT | TLE LL RALt<br>0,1<br>Oe<br>30<br>Yr YI 1<br>Ya AT TTTaTTT ee 20 PL TT TT LL ar‘|  ee/  yy<br>/ i:    1    2    3    4    U<br>‘ c r τ ii[K/W]:   [s]:    0,0486   0,01    0,2673   0,02    y 0,2592   0,05    0,2349   0,1    10 LL EL Ee<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br> [K/W]thJC  [A]IF<br>Z<br>**----- End of picture text -----**<br>


8 

IGBT-Module IGBT-modules 

## FP50R12KT4 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IF =f(V F)<br>VGE =15V<br>50 27<br>Tvj = 25°C Tvj = 25°C<br>45 Tvj = 125°C 24 Tvj = 125°C<br>EFW Tvj = 150°C ye) f Tvj = 150°C ee<br>40<br>21<br>35<br>18<br>30<br>15<br>CaerLypi SteAY<br>25<br>on 12 COPE<br>20<br>9<br>15<br>HEGRE 6 titty ty<br>105 3 Le<br>PT [APT)]<br>PIA<br>0 0<br>TT TT Liber<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R= f(T)<br>100000<br>{— | Rtyp S a SeS A  eee<br>(a rs ce<br>e e ee eee<br>PERE E EEE EEE<br>10000 NE<br>a ee<br>a<br>Ne ee ee ee ee ee ee ee ee<br>pot TNT tt<br>Eee NEE eee eee<br>1000<br>SSS<br>A<br>Pot eee eee<br>pjeeNe eee<br>Pt ftEP tftEE ftTE TTft t T tTTAHAE TT<br>SERRE RRRRRRRREE<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A]  [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


9 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FP50R12KT4 

## **Schaltplan�/�circuit_diagram_headline** 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

**==> picture [7 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
J<br>**----- End of picture text -----**<br>


## **Gehäuseabmessungen�/�package�outlines** 

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**----- Start of picture text -----**<br>
In fin e o n<br>**----- End of picture text -----**<br>


prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0 

10 

**==> picture [66 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FP50R12KT4 

## **Nutzungsbedingungen** 

## application. 

11 



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- [Supplier page](https://es.farnell.com/infineon/fp50r12kt4bpsa1/igbt-module-1-2kv-50a-280w/dp/3775909)
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