# IGBT Module, PIM Three Phase Input Rectifier, 50 A, 1.85 V, 280 W, 150 °C, Module ![Product image](https://novapart.co/image/farnell:2781246/) **URL**: https://novapart.co/products/FP50R12KT4B11BOSA1/igbt-module-pim-three-phase-input-rectifier-50-a **SKU**: FP50R12KT4B11BOSA1 **Manufacturer**: INFINEON **Category**: Semiconductors - Discretes || IGBTs || IGBT Modules **Price**: €65.2600 **Stock**: 10+ ## Description Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:280W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (27-Jun-2018) | | Product Range | EconoPIM 2 | | Igbt Technology | IGBT 4 [Trench/Field Stop] | | Igbt Termination | Press Fit | | Power Dissipation | 280W | | Igbt Configuration | PIM Three Phase Input Rectifier | | Transistor Mounting | Panel | | Transistor Polarity | N Channel | | Dc Collector Current | 50A | | Power Dissipation Pd | 280W | | Transistor Case Style | Module | | Operating Temperature Max | 150°C | | Junction Temperature Tj Max | 150°C | | Continuous Collector Current | 50A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Voltage V(Br)Ceo | 1.2kV | | Collector Emitter Saturation Voltage | 1.85V | | Collector Emitter Saturation Voltage Vce(On) | 1.85V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2781246/) ## IGBT-Module IGBT-modules ## FP50R12KT4_B11 **==> picture [111 x 22] intentionally omitted <==** **----- Start of picture text -----**
VCES = 1200V
IC nom = 50A / ICRM = 100A
**----- End of picture text -----**
- Hilfsumrichter - Motorantriebe - • Servoumrichter - - T yjop = 150°C - • VCEsat mit • Niedriges V CEsat - - - - Kupferbodenplatte - - Standardgehäuse - - - - • T vjop = • VCEsat with • Low V CEsat • • - - - • 1 IGBT-Module IGBT-modules FP50R12KT4_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,Wechselrichter�/�IGBT,Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation
FP50R12KT4_B11
IGBT-Module
IGBT-modules|| |---|---| |preparedby:AS
approvedby:RS
dateofpublication:2013-10-16
revision:3.0
**IGBT,Wechselrichter/IGBT,Inverter**
**HöchstzulässigeWerte/MaximumRatedValues**
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj= 25°C
VCES
1200
V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC= 95°C, Tvj max= 175°C
IC nom
50
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP= 1 ms
ICRM
100
A
Gesamt-Verlustleistung
Totalpowerdissipation
TC= 25°C, Tvj max= 175
Ptot
280
W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VGES
+/-20
V
**CharakteristischeWerte/CharacteristicValues**
min.
typ.
max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC= 50 A, VGE= 15 V
IC= 50 A, VGE= 15 V
IC= 50 A, VGE= 15 V
VCE sat
1,85
2,15
2,25
2,15
V
V
V
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC= 1,70 mA, VCE= VGE, Tvj= 25°C
VGEth
5,2
5,8
6,4
V
Gateladung
Gatecharge
VGE= -15 V ... +15 V
QG
0,38
µC
InternerGatewiderstand
Internalgateresistor
Tvj= 25°C
RGint
4,0
Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
Cies
2,80
nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
Cres
0,10
nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE= 1200 V, VGE= 0 V, Tvj= 25°C
ICES
1,0
mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE= 0 V, VGE= 20 V, Tvj= 25°C
IGES
100
nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC= 50 A, VCE= 600 V
VGE= ±15 V
RGon= 15Ω
td on
0,16
0,17
0,17
µs
µs
µs
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC= 50 A, VCE= 600 V
VGE= ±15 V
RGon= 15Ω
tr
0,03
0,04
0,04
µs
µs
µs
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC= 50 A, VCE= 600 V
VGE= ±15 V
RGoff= 15Ω
td off
0,33
0,43
0,45
µs
µs
µs
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC= 50 A, VCE= 600 V
VGE= ±15 V
RGoff= 15Ω
tf
0,08
0,15
0,17
µs
µs
µs
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC= 50 A, VCE= 600 V, LS= 20 nH
VGE= ±15 V, di/dt = 1400 A/µs (Tvj= 150°C)
RGon= 15Ω
Eon
5,70
7,70
8,40
mJ
mJ
mJ
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC= 50 A, VCE= 600 V, LS= 20 nH
VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)
RGoff= 15Ω
Eoff
2,80
4,30
4,80
mJ
mJ
mJ
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
Kurzschlußverhalten
SCdata
VGE ≤15 V, VCC= 800 V
VCEmax= VCES-LsCE·di/dt
ISC
180
A
Tvj= 150°C
tP ≤10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
RthJC
0,54
K/W
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proIGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,295
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
Tvj op
-40
150
°C|| 2 IGBT-Module IGBT-modules FP50R12KT4_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V| |---|---|---|---|---| |Dauergleichstrom
ContinuousDCforwardcurrent||IF|50|A| |PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|A| |Grenzlastintegral
I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|560
|A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung
Forwardvoltage|IF= 50 A, VGE= 0 V
IF= 50 A, VGE= 0 V
IF= 50 A, VGE= 0 V
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C|VF||1,70
1,65
1,65|2,15|V
V
V| |Rückstromspitze
Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)
VR= 600 V
VGE= -15 V
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C|IRM||54,0
60,0
63,0||A
A
A| |Sperrverzögerungsladung
Recoveredcharge|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)
VR= 600 V
VGE= -15 V
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C|Qr||5,50
8,80
10,0||µC
µC
µC| |AbschaltenergieproPuls
Reverserecoveryenergy|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)
VR= 600 V
VGE= -15 V
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C|Erec||1,70
3,00
3,70||mJ
mJ
mJ| |Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,81|K/W| |Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink|proDiode/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,44||K/W| |TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V| |---|---|---|---|---|---|---| |DurchlassstromGrenzeffektivwertproChip
MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|70|||A| |GleichrichterAusgangGrenzeffektivstrom
MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|80|||A| |StoßstromGrenzwert
Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C
tp= 10 ms, Tvj= 150°C|IFSM|450
370|||A
A| |Grenzlastintegral
I²t-value|tp= 10 ms, Tvj= 25°C
tp= 10 ms, Tvj= 150°C|I²t|1000
685|||A²s
A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung
Forwardvoltage|Tvj= 150°C, IF= 50 A|VF||1,05||V| |Sperrstrom
Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA| |Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,85|K/W| |Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink|proDiode/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,465||K/W| |TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions||Tvj op|-40||150|°C| |preparedby:AS
approvedby:RS
dateofpublication:2013-10-16
revision:3.0||||||| |preparedby:AS|dateofpublication:2013-10-16|||||| |approvedby:RS|revision:3.0|||||| 3 IGBT-Module IGBT-modules FP50R12KT4_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation
FP50R12KT4_B11
IGBT-Module
IGBT-modules|| |---|---| |preparedby:AS
approvedby:RS
dateofpublication:2013-10-16
revision:3.0
**IGBT,Brems-Chopper/IGBT,Brake-Chopper**
**HöchstzulässigeWerte/MaximumRatedValues**
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj= 25°C
VCES
1200
V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC= 100°C, Tvj max= 175°C
IC nom
25
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP= 1 ms
ICRM
50
A
Gesamt-Verlustleistung
Totalpowerdissipation
TC= 25°C, Tvj max= 175
Ptot
160
W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VGES
+/-20
V
**CharakteristischeWerte/CharacteristicValues**
min.
typ.
max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC= 25 A, VGE= 15 V
IC= 25 A, VGE= 15 V
IC= 25 A, VGE= 15 V
VCE sat
1,85
2,15
2,25
2,15
V
V
V
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC= 0,85 mA, VCE= VGE, Tvj= 25°C
VGEth
5,2
5,8
6,4
V
Gateladung
Gatecharge
VGE= -15 V ... +15 V
QG
0,20
µC
InternerGatewiderstand
Internalgateresistor
Tvj= 25°C
RGint
0,0
Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
Cies
1,45
nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
Cres
0,05
nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE= 1200 V, VGE= 0 V, Tvj= 25°C
ICES
1,0
mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE= 0 V, VGE= 20 V, Tvj= 25°C
IGES
100
nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC= 25 A, VCE= 600 V
VGE= ±15 V
RGon= 37Ω
td on
0,05
0,06
0,06
µs
µs
µs
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC= 25 A, VCE= 600 V
VGE= ±15 V
RGon= 37Ω
tr
0,03
0,04
0,05
µs
µs
µs
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC= 25 A, VCE= 600 V
VGE= ±15 V
RGoff= 37Ω
td off
0,34
0,43
0,45
µs
µs
µs
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC= 25 A, VCE= 600 V
VGE= ±15 V
RGoff= 37Ω
tf
0,05
0,07
0,08
µs
µs
µs
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC= 25 A, VCE= 600 V, LS= 20 nH
VGE= ±15 V
RGon= 37Ω
Eon
2,00
2,65
2,90
mJ
mJ
mJ
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC= 25 A, VCE= 600 V, LS= 20 nH
VGE= ±15 V
RGoff= 37Ω
Eoff
1,40
2,20
2,40
mJ
mJ
mJ
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C
Kurzschlußverhalten
SCdata
VGE ≤15 V, VCC= 800 V
VCEmax= VCES-LsCE·di/dt
ISC
90
A
Tvj= 150°C
tP ≤10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
RthJC
0,95
K/W
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proIGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,52
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
Tvj op
-40
150
°C|| 4 IGBT-Module IGBT-modules FP50R12KT4_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V| |---|---|---|---|---| |Dauergleichstrom
ContinuousDCforwardcurrent||IF|15|A| |PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|30|A| |Grenzlastintegral
I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|48,0
|A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung
Forwardvoltage|IF= 15 A, VGE= 0 V
IF= 15 A, VGE= 0 V
IF= 15 A, VGE= 0 V
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C|VF||1,75
1,75
1,75|2,15|V
V
V| |Rückstromspitze
Peakreverserecoverycurrent|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)
VR= 600 V
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C|IRM||20,0
22,0
23,0||A
A
A| |Sperrverzögerungsladung
Recoveredcharge|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)
VR= 600 V
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C|Qr||1,50
2,50
2,70||µC
µC
µC| |AbschaltenergieproPuls
Reverserecoveryenergy|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)
VR= 600 V
Tvj= 25°C
Tvj= 125°C
Tvj= 150°C|Erec||0,55
0,90
1,00||mJ
mJ
mJ| |Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,50|K/W| |Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink|proDiode/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,82||K/W| |TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**
|**NTC-Widerstand/NTC-Thermistor**
|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.
typ.||max.|| |Nennwiderstand
Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100
DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung
Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert
B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert
B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert
B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�AS date�of�publication:�2013-10-16 approved�by:�RS revision:�3.0 5 IGBT-Module IGBT-modules ## FP50R12KT4_B11 |Modul / Module||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung
~~Isolation test voltage~~
Material Modulgrundplatte
Material of module baseplate|RMS, f = 50 Hz, t = 1 min.
~~ee ~~|VISOL
~~ee~~||2,5
Cu||kV| |Innere Isolation
Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)
basic insulation (class 1, IEC 61140)|||Al2O3||| |Kriechstrecke
Creepage distance|Kontakt - Kuhlkorper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal|||10,0||mm| |Luftstrecke
Clearance|Kontakt - Kuhlkorper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal|||7,5||mm| |Vergleichszahl der Kriechwegbildung
Comperative tracking index||CTI||> 200||| ||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlk6rper|
Thermal resistance, case to heatsink|Paste
grease
pro Modul / per module
= 1 W/(m-k)/
= 1 W/(m-k)|RthCH||0,02||K/W| |Modulstreuinduktivität
Chip
~~Stray inductance module~~
Modulleitungswiderstand, Anschlusse -
Module lead resistance, terminals - chip|TC
~~ee ~~
= 25°C, pro Schalter / per switch|LsCE
RCC'+EE'
RAA'+CC'
~~ee ee~~|35
4,00
3,00
~~ee~~|||nH
mΩ| |Hoéchstzulassige Sperrschichttemperatur
Maximum junction temperature|Wechselrichter, Brems-Chopper/ inverter, brake-chopper
Gleichrichter/ rectifier|Tvj max|||175
150|°C
°C| |Temperatur im Schaltbetrieb
Temperature under switching conditions|Wechselrichter, Brems-Chopper/ inverter, brake-chopper
Gleichrichter/ rectifier|Tvj op|-40
-40||150
150|°C
°C| |Lagertemperatur
~~Storage temperature~~
Anzugsdrehmoment f. Modulmontage
Mounting torque for modul mounting|~~ee ~~
Schraube M5
- Montage gem. giltiger Applikationsschrift
Screw M5
- Mounting according to valid application note|Tstg
M
~~ee ee~~|-40
125
3,00
-
6,00
~~ee~~|||°C
Nm| |Gewicht
Weight||G||180||g| 6 ## IGBT-Module IGBT-modules ## FP50R12KT4_B11 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**
IC =f(V CE) IC =f(V CE)
VGE =15V Tvj = 150°C
100 a 7 100 es | [ov
Tvj = 25°C VGE = 19V
90 Tvj = 125°C Tepe} a 90 | VGE = 17V L i Aaaa | be
Tvj = 150°C VGE = 15V
VGE = 13V
80 ee | 80 VGE = 11V Le
VGE = 9V
Pt a PE e e
70 70
PP ye: E e—
60 fe 60 —
50 50
40 PPouSRR AwdeARETE 40 EEeeeey22aee
30 pi EE 30 EevA
vel ET
ee uy hi A
20 20
eeee
10 10
PTLET PT gee
0 0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V] VCE [V]
Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)
transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)
IC =f(V GE) Eon =f(l),E C off =f(I C)
VCE =20V VGE =+15V,R Gon =15 Ω ,R Goff =15 Ω ,V CE =600V
100 20
90 TTvjvj = 25°C = 125°C i 18 EEonoff, T, Tvjvj = 125°C = 125°C a
Tvj = 150°C Eon, Tvj = 150°C
Eeee HEE SA
Eoff, Tvj = 150°C
BS TC) fe Fea
80 T 16 1 e e
70 SG0000 14
pp 800 soesesS
60 12 a ee eee [ee]
CEPT) aFREERee ee eee ARE
50 10
SRR
40 8 ee ee ee /
2 ee eee ee eee
AR ee
30 6
20 ee ee ee 4 ecee ee
SGP a ee ee ee
10 2
40008 00sooeeeo
ee Rr ee eee
0 0
7 eeee
5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 70 80 90 100
VGE [V] IC [A]
[A] [A]
IC IC
[A]
IC E [mJ]
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7 IGBT-Module IGBT-modules ## FP50R12KT4_B11 **==> picture [485 x 282] intentionally omitted <==** **----- Start of picture text -----**
Eon ={(R),E G off =f(R G) ZthJC =f (t)
VGE =+15V,1 C =50A,V CE =600V
20 a 7 1 a
Eon, Tvj = 125°C ZthJC : IGBT
18 Z Eoff, Tvj = 125°C Wold] ) Leraa A| eee e ee eoo
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
16 EnFT Ween LgeceZea (TT aPCI
14 Py yt | flere] by 24 ae | el|
12 PLE oan TINEZAI LHL
4 [ELE] [LE] i
10 Lt [beer] ae EEL 0,1 7
8 Para | ELL LLL Ey] PA=Ate
6 Sea A
BESeze;azec TALI ETN
4
i: 1 2 3 4
2 PL EE EEEcoc c mma g it r τ ii[K/W]: [s]: Tomo 0,0324 0,01 mat 0,1782 0,02 0,1728 0,05 a 0,1566 0,1
0 0,01
0 20 40 60 80 100 120 140 0,001 0,01 0,1 1 10
RG [ Ω ] t [s]
[K/W]
E [mJ]
thJC
Z
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## **(RBSOA)** > IF =f(V F) **==> picture [486 x 271] intentionally omitted <==** **----- Start of picture text -----**
IC =f(V CE)
VGE Aen V,R Goff =15 Ω ,T vj =150°C
110 100
IC, Modul Tvj = 25°C
100 I C , Chip 90 Tvj = 125°C
Tvj = 150°C
Fe LL tT fF L ETT A
90
80
80
70
70
60
60
50
50
40
40
30
30
a ae
20
20 Po #/
10 ee ee 10 ee oe
0 PT PP 0 e /|e
0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VCE [V] VF [V]
[A] [A]
IC IF
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8 IGBT-Module IGBT-modules ## FP50R12KT4_B11 **==> picture [480 x 279] intentionally omitted <==** **----- Start of picture text -----**
Erec =f (I F) Erec =f(R G)
RGon =15 Ω ,V CE =600V IF =50A,V CE =600V
5,0 5,0
Erec, Tvj = 125°C Erec, Tvj = 125°C
4,5 E Erec, Tvj = 150°C tt 4,5 E Erec, Tvj = 150°C e
4,0 4,0
3,5 3,5
3,0 3,0
2,5 2,5
tla at BRRe SRR RG ESRD
2,0 Pierre EE 2,0 ELE PRL
PATEL LEE
1,5 if 1,5 EEE EE
1,0 Vite Ett yy 1,0 ELLE
ELE
0,5 AAT [TT][ EET] 0,5 Ee
0,0 0,0
0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140
IF [A] RG [ Ω ]
E [mJ] E [mJ]
**----- End of picture text -----**
> IFF =f(V F)) **==> picture [486 x 280] intentionally omitted <==** **----- Start of picture text -----**
ZthJC = f (t) IFF =f(V F))
10 ——— er 100 1
ZthJC : Diode Tvj = 25°C
o H#H— o Fee TT 90 (ee Tvj = 150°C
PT TT TTTTTT
| | | ll 8070 PTTP| [| PPL|
IMT /
1
a a ee ee ee e e ee
a 60
PTPTa TTTTT TTTaeTel T TTT 50 PET] | TLE Ly ALEt
40
SAAD) MART RTI PET YT | TLE LL RALt
0,1
Oe
30
Yr YI 1
Ya AT TTTaTTT ee 20 PL TT TT LL ar‘| ee/ yy
/ i: 1 2 3 4 U
‘ c r τ ii[K/W]: [s]: 0,0486 0,01 0,2673 0,02 y 0,2592 0,05 0,2349 0,1 10 LL EL Ee
0,01 0
0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4
t [s] VF [V]
[K/W]thJC [A]IF
Z
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9 ## IGBT-Module IGBT-modules ## FP50R12KT4_B11 **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**
IC =f(V CE) IF =f(V F)
VGE =15V
50 27
Tvj = 25°C Tvj = 25°C
45 Tvj = 125°C 24 Tvj = 125°C
Tvj = 150°C Tvj = 150°C
fF EL ler) Ie
40 21 pe
ELC ae
35
18
30
pt oT ae f
15
25
12
20
9
15
HEGRE 6 titty ty
105 3 Le
PT [APT)]
7
0 0
TT TTT} Liber
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VCE [V] VF [V]
[A] [A]
IC IF
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**==> picture [240 x 252] intentionally omitted <==** **----- Start of picture text -----**
100000
{— | Rtyp S a SeS A eee
(a rs ce
e e ee eee
PERE E EEE EEE
10000
a ee
a
Ne ee ee ee ee ee ee ee ee
pot TNT tt
CERNE
PN
1000
Aa ee eeeeee
Pot eee eee
pjeeNe eee
Pt ftEP tftEE ftTE TTft t T tTTAHAE TT
SERRE RRRRRRRREE
100
0 20 40 60 80 100 120 140 160
TC [°C]
] Ω
R[
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10 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FP50R12KT4_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** **==> picture [7 x 6] intentionally omitted <==** **----- Start of picture text -----**
J
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## **Gehäuseabmessungen�/�package�outlines** **==> picture [229 x 63] intentionally omitted <==** **----- Start of picture text -----**
In fin e o n
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**==> picture [160 x 82] intentionally omitted <==** |preparedby:AS|dateofpublication:2013-10-16| |---|---| |approvedby:RS|revision:3.0| 11 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**
IGBT-Module
IGBT-modules
**----- End of picture text -----**
## FP50R12KT4_B11 ## **Nutzungsbedingungen** **==> picture [42 x 8] intentionally omitted <==** **----- Start of picture text -----**
application.
**----- End of picture text -----**
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