# IGBT Module, Seven Pack, 55 A, 1.8 V, 210 W, 125 °C, Module ![Product image](https://novapart.co/image/farnell:3703586/) **URL**: https://novapart.co/products/FP40R12KT3BPSA1/igbt-module-seven-pack-55-a-18-v-210-w-125-c **SKU**: FP40R12KT3BPSA1 **Manufacturer**: INFINEON **Category**: Semiconductors - Discretes || IGBTs || IGBT Modules **Price**: €55.9400 **Stock**: 10+ **Lead Time**: 99 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | Product Range | - | | Igbt Technology | IGBT 3 [Trench] | | Igbt Termination | Press Fit | | Power Dissipation | 210W | | Igbt Configuration | Seven Pack | | Transistor Mounting | Panel | | Dc Collector Current | 55A | | Power Dissipation Pd | 210W | | Transistor Case Style | Module | | Operating Temperature Max | 125°C | | Junction Temperature Tj Max | 125°C | | Continuous Collector Current | 55A | | Collector Emitter Voltage Max | 1.2kV | | Collector Emitter Voltage V(Br)Ceo | 1.2kV | | Collector Emitter Saturation Voltage | 1.8V | | Collector Emitter Saturation Voltage Vce(On) | 1.8V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3703586/) > IGBT-ModuleIGBT-modules FP40R12KT3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |TechnischeInformation/TechnicalInformation
FP40R12KT3
IGBT-Module
IGBT-modules|| |---|---| |preparedby:AS
approvedby:RS
dateofpublication:2013-10-03
revision:2.0
**VorläufigeDaten**
**PreliminaryData**
**IGBT,Wechselrichter/IGBT,Inverter**
**HöchstzulässigeWerte/MaximumRatedValues**
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj= 25°C
VCES
1200
V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC= 80°C, Tvj max= 150°C
TC= 25°C, Tvj max= 150°C
IC nom
IC
40
55
A
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP= 1 ms
ICRM
80
A
Gesamt-Verlustleistung
Totalpowerdissipation
TC= 25°C, Tvj max= 150
Ptot
210
W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VGES
+/-20
V
**CharakteristischeWerte/CharacteristicValues**
min.
typ.
max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC= 40 A, VGE= 15 V
IC= 40 A, VGE= 15 V
VCE sat
1,80
2,05
2,30
V
V
Tvj= 25°C
Tvj= 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC= 1,50 mA, VCE= VGE, Tvj= 25°C
VGEth
5,0
5,8
6,5
V
Gateladung
Gatecharge
VGE= -15 V ... +15 V
QG
0,33
µC
InternerGatewiderstand
Internalgateresistor
Tvj= 25°C
RGint
6,0
Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
Cies
2,50
nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
Cres
0,09
nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE= 1200 V, VGE= 0 V, Tvj= 25°C
ICES
5,0
mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE= 0 V, VGE= 20 V, Tvj= 25°C
IGES
400
nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC= 40 A, VCE= 600 V
VGE= ±15 V
RGon= 27Ω
td on
0,09
0,09
µs
µs
Tvj= 25°C
Tvj= 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC= 40 A, VCE= 600 V
VGE= ±15 V
RGon= 27Ω
tr
0,03
0,05
µs
µs
Tvj= 25°C
Tvj= 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC= 40 A, VCE= 600 V
VGE= ±15 V
RGoff= 27Ω
td off
0,42
0,52
µs
µs
Tvj= 25°C
Tvj= 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC= 40 A, VCE= 600 V
VGE= ±15 V
RGoff= 27Ω
tf
0,07
0,09
µs
µs
Tvj= 25°C
Tvj= 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC= 40 A, VCE= 600 V, LS= 45 nH
VGE= ±15 V
RGon= 27Ω
Eon
4,10
5,80
mJ
mJ
Tvj= 25°C
Tvj= 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC= 40 A, VCE= 600 V, LS= 45 nH
VGE= ±15 V
RGoff= 27Ω
Eoff
3,60
4,20
mJ
mJ
Tvj= 25°C
Tvj= 125°C
Kurzschlußverhalten
SCdata
VGE ≤15 V, VCC= 900 V
VCEmax= VCES-LsCE·di/dt
ISC
160
A
Tvj= 125°C
tP ≤10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
RthJC
0,60
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
Tvj op
-40
125
°C|| |preparedby:AS|dateofpublication:2013-10-03| |---|---| |approvedby:RS|revision:2.0| 1 > IGBT-ModuleIGBT-modules FP40R12KT3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |Dauergleichstrom
ContinuousDCforwardcurrent||IF|40|||A| |PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|80|||A| |Grenzlastintegral
I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|320|||A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung
Forwardvoltage|IF= 40 A, VGE= 0 V
IF= 40 A, VGE= 0 V
Tvj= 25°C
Tvj= 125°C|VF||1,75
1,75|2,30|V
V| |Rückstromspitze
Peakreverserecoverycurrent|IF= 40 A, - diF/dt = 1000 A/µs (Tvj=125°C)
VR= 600 V
VGE= -15 V
Tvj= 25°C
Tvj= 125°C|IRM||45,0
46,0||A
A| |Sperrverzögerungsladung
Recoveredcharge|IF= 40 A, - diF/dt = 1000 A/µs (Tvj=125°C)
VR= 600 V
VGE= -15 V
Tvj= 25°C
Tvj= 125°C|Qr||4,40
8,40||µC
µC| |AbschaltenergieproPuls
Reverserecoveryenergy|IF= 40 A, - diF/dt = 1000 A/µs (Tvj=125°C)
VR= 600 V
VGE= -15 V
Tvj= 25°C
Tvj= 125°C|Erec||1,55
3,10||mJ
mJ| |Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,95|K/W| |TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions||Tvj op|-40||125|°C| ## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V| |---|---|---|---|---|---|---| |DurchlassstromGrenzeffektivwertproChip
MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|50|||A| |GleichrichterAusgangGrenzeffektivstrom
MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|60|||A| |StoßstromGrenzwert
Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C
tp= 10 ms, Tvj= 150°C|IFSM|315
260|||A
A| |Grenzlastintegral
I²t-value|tp= 10 ms, Tvj= 25°C
tp= 10 ms, Tvj= 150°C|I²t|500
340|||A²s
A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung
Forwardvoltage|Tvj= 150°C, IF= 40 A|VF||1,20||V| |Sperrstrom
Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||2,00||mA| |Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,00|K/W| |TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions||Tvj op||||°C| |preparedby:AS|dateofpublication:2013-10-03| |---|---| |approvedby:RS|revision:2.0| 2 > IGBT-ModuleIGBT-modules FP40R12KT3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation
FP40R12KT3
IGBT-Module
IGBT-modules|| |---|---| |preparedby:AS
approvedby:RS
dateofpublication:2013-10-03
revision:2.0
**VorläufigeDaten**
**PreliminaryData**
**IGBT,Brems-Chopper/IGBT,Brake-Chopper**
**HöchstzulässigeWerte/MaximumRatedValues**
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj= 25°C
VCES
1200
V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC= 80°C, Tvj max= 150°C
TC= 25°C, Tvj max= 150°C
IC nom
IC
15
25
A
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP= 1 ms
ICRM
30
A
Gesamt-Verlustleistung
Totalpowerdissipation
TC= 25°C, Tvj max= 150
Ptot
105
W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VGES
+/-20
V
**CharakteristischeWerte/CharacteristicValues**
min.
typ.
max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC= 15 A, VGE= 15 V
IC= 15 A, VGE= 15 V
VCE sat
1,70
1,90
2,15
V
V
Tvj= 25°C
Tvj= 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC= 0,50 mA, VCE= VGE, Tvj= 25°C
VGEth
5,0
5,8
6,5
V
Gateladung
Gatecharge
VGE= -15 V ... +15 V
QG
0,15
µC
InternerGatewiderstand
Internalgateresistor
Tvj= 25°C
RGint
0,0
Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
Cies
1,10
nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V
Cres
0,04
nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE= 1200 V, VGE= 0 V, Tvj= 25°C
ICES
5,0
mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE= 0 V, VGE= 20 V, Tvj= 25°C
IGES
400
nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC= 15 A, VCE= 600 V
VGE= ±15 V
RGon= 75Ω
td on
0,09
0,09
µs
µs
Tvj= 25°C
Tvj= 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC= 15 A, VCE= 600 V
VGE= ±15 V
RGon= 75Ω
tr
0,03
0,05
µs
µs
Tvj= 25°C
Tvj= 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC= 15 A, VCE= 600 V
VGE= ±15 V
RGoff= 75Ω
td off
0,42
0,52
µs
µs
Tvj= 25°C
Tvj= 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC= 15 A, VCE= 600 V
VGE= ±15 V
RGoff= 75Ω
tf
0,07
0,09
µs
µs
Tvj= 25°C
Tvj= 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC= 15 A, VCE= 600 V, LS= t.b.d. nH
VGE= ±15 V
RGon= 75Ω
Eon
1,50
2,10
mJ
mJ
Tvj= 25°C
Tvj= 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC= 15 A, VCE= 600 V, LS= t.b.d. nH
VGE= ±15 V
RGoff= 75Ω
Eoff
1,10
1,30
mJ
mJ
Tvj= 25°C
Tvj= 125°C
Kurzschlußverhalten
SCdata
VGE ≤15 V, VCC= 900 V
VCEmax= VCES-LsCE·di/dt
ISC
60
A
Tvj= 125°C
tP ≤10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
RthJC
1,20
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
Tvj op
-40
125
°C|| |preparedby:AS|dateofpublication:2013-10-03| |---|---| |approvedby:RS|revision:2.0| 3 > IGBT-ModuleIGBT-modules FP40R12KT3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** **Vorläufige�Daten Preliminary�Data** ## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V| |---|---|---|---|---| |Dauergleichstrom
ContinuousDCforwardcurrent||IF|10|A| |PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|A| |Grenzlastintegral
I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|20,0
|A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung
Forwardvoltage|IF= 10 A, VGE= 0 V
IF= 10 A, VGE= 0 V
Tvj= 25°C
Tvj= 125°C|VF||1,80
1,85|2,25|V
V| |Rückstromspitze
Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)
VR= 600 V
Tvj= 25°C
Tvj= 125°C|IRM||14,0
15,0||A
A| |Sperrverzögerungsladung
Recoveredcharge|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)
VR= 600 V
Tvj= 25°C
Tvj= 125°C|Qr||1,00
1,80||µC
µC| |AbschaltenergieproPuls
Reverserecoveryenergy|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)
VR= 600 V
Tvj= 25°C
Tvj= 125°C|Erec||0,26
0,56||mJ
mJ| |Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||2,30|K/W| |TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions||Tvj op|-40||125|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**
|**NTC-Widerstand/NTC-Thermistor**
|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.
typ.||max.|| |Nennwiderstand
Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100
DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung
Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert
B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert
B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K| |B-Wert
B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 4 IGBT-Module IGBT-modules ## FP40R12KT3 |Modul / Module||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung
~~Isolation test voltage~~
Material Modulgrundplatte
Material of module baseplate|RMS, f = 50 Hz, t = 1 min
~~ee ~~|VISOL
~~ee~~||2,5
Cu||kV| |Innere Isolation
Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)
basic insulation (class 1, IEC 61140)|||AI203||| |Kriechstrecke
Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal|||10,0||mm| |Luftstrecke
Clearance|Kontakt - Kuhlk6rper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal|||7,5||mm| |Vergleichszahl der Kriechwegbildung
Comperative tracking index||CTI||> 225||| ||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlkérper|
Thermal resistance, case to heatsink|Paste
grease
pro Modul / per module
= 1 W/(m-k)/
= 1 W/(m-k)|RthCH||0,02||K/W| |Modulstreuinduktivität
Chip
~~Stray inductance module~~
Modulleitungswiderstand, Anschlusse -
Module lead resistance, terminals - chip|TC
~~ee ~~
= 25°C, pro Schalter / per switch|LsCE
RCC'+EE'
RAA'+CC'
~~ee ee~~|60
4,00
3,00
~~ee~~|||nH
mΩ| |Lagertemperatur
~~Storage temperature~~
Anzugsdrehmoment f. Modulmontage
Mounting torque for modul mounting|~~ee ~~
Schraube M5
- Montage gem. giltiger Applikationsschrift
Screw M5
- Mounting according to valid application note|Tstg
M
~~ee ee~~|-40
125
3,00
-
6,00
~~ee~~|||°C
Nm| |Gewicht
Weight||G||180||g| 5 ## IGBT-Module IGBT-modules ## FP40R12KT3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**
IC =f(V CE) IC =f(V CE)
VGE =15V Tvj = 125°C
80 a | / 7 80 es
Tvj = 25°C VGE = 19V
Tvj = 125°C VGE = 17V
70 70 VGE = 15V
EJ) fv) FL | ea
VGE = 13V
VGE = 11V
60 60 VGE = 9V
/
/ / /is
50 50
/ hi / vA
40 40
A
30 30
/, [i/,
20 20
10 10
/ Ya
0 0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V] VCE [V]
Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)
transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)
IC =f(V GE) Eon =f(l),E C off =f(I C)
VCE =20V VGE =415V,R Gon =27 Ω ,R Goff =27 Ω ,V CE =600V
80 16
Tvj = 25°C Eon, Tvj = 125°C
Tvj = 125°C Eoff, Tvj = 125°C
70 14
=| | a ee
60 12
50 10
40 8
ot | itty
30 6
20 4
10 2
Pt ig tt ey Lee
0 0
5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70 80
VGE [V] IC [A]
[A] [A]
IC IC
[A]
IC E [mJ]
**----- End of picture text -----**
6 IGBT-Module IGBT-modules ## FP40R12KT3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**
Eon =f(R),E G off =f(R G) ZthJC =f (t)
VGE =+15V,1 C =40A,V CE =600V
10 a 1 a
|ee eee
Eon, Tvj = 125°C ZthJC : IGBT
98 7 . Eoff, Tvj = 125°C 7] | | fl a |ee a
7 Pf fe PL TA aeETI ETT|
6
pot] ft et7 UU CATT‘ LIE
5 0,1
TATee
4 ean ee ee
7
3 Poff | VETTET
2 Pf Ff ff PAEa a |a I
i: 1 2 3 4
1 oe GE) ||| QA r τ ii[K/W]: [s]: 0,06769 0,002345 0,2709 0,0282 0,1523 0,1128 0,1052 0,282
0 Po tT 0,01 a
0 10 20 30 40 50 60 0,001 0,01 0,1 1 10
RG [ Ω ] t [s]
Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)
(RBSOA) forward characteristic of Diode, Inverter (typical)
reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)
IC =f(V CE)
VGE ve V,R Goff =27 Ω ,T vj =125°C
90 80
IC, Modul Tvj = 25°C
80 EJ) IC, Chip ee Tvj = 125°C
70
t
70
ee ee
ee 60
60
ee 50 eee
50
40
40
30
30
pt | | tt a a
20
20
pe aT
10
10
eee
0 0
eee e
0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0
VCE [V] VF [V]
[K/W]
E [mJ]
thJC
Z
[A] [A]
IC IF
**----- End of picture text -----**
7 IGBT-Module IGBT-modules ## FP40R12KT3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**
Erec =f(I F) Erec =f(R G)
RGon 1S Ω ,V CE =600V IF = 40K V CE = 600 V
5,0 ss 5,0 |
Erec, Tvj = 125°C Erec, Tvj = 125°C
[ee (ee
4,5 4,5
4,0 4,0
PtP Pp ee Pe
3,5 e epa 3,5 e e
BRR ——
3,0 3,0
/ 28 ee eee
E42 eee
2,5 2,5
2,0 2,0
24 ee
1,5 1,5
1,0 1,0
0,5 0,5
0,0 0,0
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60
IF [A] RG [ Ω ]
Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, Gleichrichter (typisch)
transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)
ZthJC =f (t) IF =f(V F)
1 Pn 80 I
| ZthJC : Diode ee ee Tvj = 25°C
a Tvj = 150°C
PT TT EAT TT 70 rd ];
CZ C 60 PLP TT yy By
a a fy
OCCT AR
ATE, 50 (EE
0,1 40
P| 7]AL TTTT)TT ! //
PL|a el|| 3020 PL TT LL Td
T im i: 1 2 ir 3 4 PPLT]
ri[K/W]: 0,09674 0,6249 0,18 0,05701 10
τ i[s]: 0,003333 0,03429 0,1294 0,7662
P| 7)
0,01 0
0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8
t [s] VF [V]
E [mJ] E [mJ]
[K/W]thJC [A]IF
Z
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8 ## IGBT-Module IGBT-modules Technische Information / FP40R12KT3 Technical Information **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**
IC =f(V CE) IF =f(V F)
VGE =15V
30 a|7 30
Tvj = 25°C Tvj = 25°C
Tvj = 125°C Tvj = 125°C
25 25
20 20
15 / 15 |
10 10
5 5
0 0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
VCE [V] VF [V]
NTC-Widerstand-Temperaturkennlinie (typisch)
NTC-Thermistor-temperature characteristic (typical)
R= f(T)
100000
| J Rtyp a—————————a
(Rar ce
a ee es es
ee ee
10000
poNePNSS a
ER Ne ee
po NNT
pot NE
ERNE
1000
ee
a es
a a
po NN
aa
aa
100
0 20 40 60 80 100 120 140 160
TC [°C]
[A] [A]
IC IF
] Ω
R[
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9 ## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FP40R12KT3 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** ## **Vorläufige�Daten Preliminary�Data** **==> picture [410 x 138] intentionally omitted <==** ## **Gehäuseabmessungen�/�package�outlines** **==> picture [29 x 44] intentionally omitted <==** **----- Start of picture text -----**
Infineon
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IGBT-Module
IGBT-modules
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