# IGBT Module, PIM Three Phase Input Rectifier, 54 A, 1.85 V, 215 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2781245/)

**URL**: https://novapart.co/products/FP35R12W2T4B11BOMA1/igbt-module-pim-three-phase-input-rectifier-54-a
**SKU**: FP35R12W2T4B11BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €33.0700
**Stock**: 25+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:54A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPIM 2B |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 215W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 54A |
| Power Dissipation Pd | 215W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 54A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781245/)

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FP35R12W2T4_B11 

**==> picture [86 x 38] intentionally omitted <==**

EasyPIM™2B�Modul�PressFIT�mit�Trench/Feldstopp�IGBT4�und�Emitter�Controlled4�Diode� EasyPIM™2B�module�PressFIT�with�trench/fieldstop�IGBT4�and�Emitter�Controlled4�Diode� 

## **Vorläufige�Daten IGBT,Wechselrichter�/�IGBT,Inverter Preliminary�Data Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FP35R12W2T4_B11<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EasyPIM™2BModulPressFITmitTrench/FeldstoppIGBT4undEmitterControlled4Diode<br>EasyPIM™2BmodulePressFITwithtrench/fieldstopIGBT4andEmitterControlled4Diode<br>preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-04<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>35<br>54<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>70<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>215<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 35 A, VGE= 15 V<br>IC= 35 A, VGE= 15 V<br>IC= 35 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,27<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,00<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,07<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 12Ω<br>td on<br>0,025<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 12Ω<br>tr<br>0,013<br>0,016<br>0,018<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 12Ω<br>td off<br>0,24<br>0,295<br>0,31<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 12Ω<br>tf<br>0,115<br>0,17<br>0,20<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 35 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 2500 A/µs (Tvj= 150°C)<br>RGon= 12Ω<br>Eon<br>1,90<br>2,90<br>3,15<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 35 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 12Ω<br>Eoff<br>2,00<br>2,90<br>3,20<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>130<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,60<br>0,70<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,60<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FP35R12W2T4_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|35|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|70|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|240<br>220|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,65<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 35 A, - diF/dt = 2500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||81,0<br>85,0<br>88,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 35 A, - diF/dt = 2500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,95<br>6,80<br>7,50||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 35 A, - diF/dt = 2500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,50<br>2,70<br>2,95||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,80|0,90|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,75||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 100°C|IFRMSM|50|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 100°C|IRMSM|50|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1000<br>685|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 35 A|VF||0,95||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,05|1,15|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,95||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op||||°C|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-04<br>revision:2.0|||||||
|preparedby:DK|dateofpublication:2013-11-04||||||
|approvedby:MB|revision:2.0||||||



2 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FP35R12W2T4_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FP35R12W2T4_B11<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-04<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>35<br>54<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>70<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>215<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 35 A, VGE= 15 V<br>IC= 35 A, VGE= 15 V<br>IC= 35 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,27<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,00<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,07<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 47Ω<br>td on<br>0,07<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 47Ω<br>tr<br>0,045<br>0,05<br>0,057<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 47Ω<br>td off<br>0,28<br>0,44<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 47Ω<br>tf<br>0,115<br>0,175<br>0,205<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 35 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 47Ω<br>Eon<br>5,00<br>6,50<br>7,00<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 35 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 47Ω<br>Eoff<br>2,10<br>3,05<br>3,35<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>130<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,60<br>0,70<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,60<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



3 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FP35R12W2T4_B11 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|10|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|16,0<br>14,0<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||12,0<br>10,0<br>8,00||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,90<br>1,70<br>1,90||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,24<br>0,52<br>0,59||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,75|1,95|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,30||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�DK date�of�publication:�2013-11-04 approved�by:�MB revision:�2.0 

4 

## Technische�Information�/�Technical�Information 

## IGBT-Module IGBT-modules FP35R12W2T4_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||5,00<br>6,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||39||g|



Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. 

date�of�publication:�2013-11-04 revision:�2.0 

prepared�by:�DK approved�by:�MB 

5 

IGBT-Module IGBT-modules 

## FP35R12W2T4_B11 

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IC CE) IC CE)<br>VGE “AsV Tvj =150°C<br>70 70<br>65 Tvj = 25°C 65 VGE = 19V<br>me Tvj = 125°C Lilie | Mm [L] VGE = 17V [LL]<br>60 F Tvj = 150°C f fe) 60 VGE = 15V ee I Le<br>VGE = 13V<br>55 a e e eee 55 VVGEGE = 11V = 9V PL A Pee<br>50 pot 50 a i (oi.<br>45 45<br>ee eee pi | | Ae |<br>40 eee ee eee 40 po ere<br>35 po} A 35 poe<br>30 30<br>| | | ct fe | po EYbe|<br>25 ee ee 25 po ZA<br>20 20<br>po | ee | P| ee | |<br>ee ae P| A ar |<br>15 15<br>10 10<br>| | [Fy] | fl | | | Ae tT tt tt<br>5 | | yt | | | | 5 a. Zneee<br>0 poet | | 0 po] | Et | |<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 1,0 2,0 3,0 4,0 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


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transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE oo VGE ~HeVR Gon L412 Ω ,R Goff =12 Ω ,V CE =600V<br>70 10,0<br>65 Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C 9,0 Eoff, Tvj = 125°C<br>60 Tvj = 150°C Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>ER) fee<br>55 ae a e e ee 8,0 — /<br>50 e e<br>7,0<br>2 ee d<br>45<br>6,0<br>40 ee ee /<br>35 ee 5,0 enneeeee<br>30<br>ee pe ocean<br>4,0<br>25<br>20 po | | | YY 3,0 LY<br>15<br>2,0<br>10<br>1,0<br>5 | | ey | tt Lo<br>eae<br>0 0,0<br>ee ee<br>5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 70<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


6 

## IGBT-Module IGBT-modules Technische Information FP35R12W2T4_B11 / Technical Information 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =4+15V,1 C =35A,V CE =600V<br>14 10<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eoff, Tvj = 125°C<br>12 | Eon, Tvj = 150°C Hoff ooo or TT TT TTT]<br>Eoff, Tvj = 150°C<br>| Ie Se<br>— A LUT ETTEE<br>10<br>+ e 1 ITT T o<br>8 Pt |LL YT pea ee e ee |<br>Zea ae YT | TT Pe TTT TT TTT<br>6 P| PT TU TT<br> oy Sort<br>ee aeee ee 0,1 gE||nN |<br>4 | A--j——to—eooeas? | ieeePEeeseeeEEE EE<br>2 i:    1    2    3    4<br>ri[K/W]:   0,058    0,135   0,47   0,537<br>τ i[s]:    0,0005   0,005   0,05   0,2<br>a fC<br>PLA IN<br>0 0,01 | So oo o<br>0 20 40 60 80 100 120 140 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>IF F)<br>I needy C CE  bias safe )  operating area IGBT,Inverter (RBSOA) =f(V<br>VGE =415V,R Goff =12 Ω ,T vj =150°C<br>77 Ld 70 es<br>IC, Modul 65 E Tvj = 25°C e<br>70 E I C , Chip L] Tvj = 125°C |<br>60 Tvj = 150°C<br>Ty} Fe pee ee<br>63<br>tS hs<br>55<br>Fe i e e ee ee<br>56 50<br>49 ee ee ec 45<br> eee P P<br>ee 40 ee<br>42<br>35<br>35<br>30<br>Os Ht PT | | | rE yt<br>2821 Pfeeee eee 2520 eeeeee, eeeee<br>15<br>ee<br>14<br>10<br>PE) pa<br>7<br>5 PT | Lay |<br>ee<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


7 

IGBT-Module IGBT-modules 

## FP35R12W2T4_B11 

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**----- Start of picture text -----**<br>
E switching rec F) losses Diode, Inverter (typical) E switching rec G) losses Diode, Inverter (typical)<br>RGon tp Ω ,V CE =600V IF = 36 RV CE = 600 V<br>5,0 4,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>a Erec, Tvj = 150°C A Erec, Tvj = 150°C<br>3,5<br>4,0<br>3,0<br>2,5<br>3,0 PEE eee] «= A C<br>ett<br>eT 2,0 ER<br>ila | LE<br>2,0<br>1,5<br>eA PS<br>1,0<br>1,0<br>ecceeeeereere) 0,5 PS<br>|<br>0,0 0,0<br>0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, Gleichrichter (typisch)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJH =f (t) IF =f(V F)<br>10 a 70 a<br>H ZthJH : Diode S eo 65 Tvj = 25°C a<br>See Tvj = 150°C<br>e P A ettPClee ee 6055 ry eea TysEy TL<br>o I ary]<br>50<br>LAATLEICAIT Co TN S T<br>45<br>40<br>CUT U eETM TEEEERE RHEE<br>1 35<br>E aA) q 302520 ry oT | Ly<br>CON 15 TAA<br>| ACI C| EI i:    UU) 1    TICCI 2    3    TT 4    CE| T 10 eATT PP Tt | 4<br>ri[K/W]:   0,104    0,237   0,636   0,573<br>τ i[s]:    0,0005   0,005   0,05    0,2    5<br>C ee!) Ee<br>0,1 Vi TTT TEE 0 Pi Pt YI |<br>0,001 0,01 0,1 1 10 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJH  [A]IF<br>Z<br>**----- End of picture text -----**<br>


8 

IGBT-Module IGBT-modules 

## FP35R12W2T4_B11 

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**----- Start of picture text -----**<br>
I output C  characteristic CE) IGBT, Brake-Chopper (typical) forward IF F) characteristic of Diode, Brake-Chopper (typical)<br>VGE<br>70 20<br>65 Tvj = 25°C Tvj = 25°C<br>E Tvj = 125°C Le] 18 © Tvj = 125°C LOE<br>60 Tvj = 150°C Tvj = 150°C<br>16<br>55<br>a ee a a i<br>50<br>Oe a e e 14<br>45<br>ee eee 12 PTT | | | | TAT<br>40<br>ee ee ee ee ;,<br>35 Pere CULL 10<br>30 Pot 8 PoEEtt tt PAR ff<br>25<br>6<br>20<br>15 a ae 4 PLE | YE EL I<br>10<br>| | [Fy] | fl | 2 PT] | er TT fe<br>5 P| yt] | tT 7<br>A<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE  [V] VF [V]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R= f(T)<br>100000<br>= Rtyp =<br>(Rar ce<br>a<br>p t<br>Soe<br>10000<br>a<br>———<br>pot NE<br>pp Nf<br>ERNE<br>1000<br>———<br>es<br>(a<br>a ee ee ee ee<br>CAP re<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A]  [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


9 

## Technische�Information�/�Technical�Information 

IGBT-Module IGBT-modules FP35R12W2T4_B11 

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## **Vorläufige�Daten Preliminary�Data** 

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## **Gehäuseabmessungen�/�package�outlines** 

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prepared�by:�DK date�of�publication:�2013-11-04 approved�by:�MB revision:�2.0 

10 

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FP35R12W2T4_B11<br>**----- End of picture text -----**<br>


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## Links

- [View this product on Novapart](https://novapart.co/products/FP35R12W2T4B11BOMA1/igbt-module-pim-three-phase-input-rectifier-54-a)
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- [Supplier page](https://es.farnell.com/infineon/fp35r12w2t4b11boma1/igbt-module-n-ch-1-2kv-54a/dp/2781245)
---

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