# IGBT Module, Seven Pack, 35 A, 1.85 V, 210 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3703592/)

**URL**: https://novapart.co/products/FP35R12KT4BPSA1/igbt-module-seven-pack-35-a-185-v-210-w-150-c
**SKU**: FP35R12KT4BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €48.1700
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPIM 2 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 210W |
| Igbt Configuration | Seven Pack |
| Transistor Mounting | Panel |
| Dc Collector Current | 35A |
| Power Dissipation Pd | 210W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 35A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3703592/)

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FP35R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

EconoPIM™2�Modul�mit�Trench/Feldstopp�IGBT4�und�Emitter�Controlled4�Diode� EconoPIM™2�module�with�trench/fieldstop�IGBT4�and�Emitter�Controlled4�diode� 

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FP35R12KT4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EconoPIM™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode<br>EconoPIM™2modulewithtrench/fieldstopIGBT4andEmitterControlled4diode<br>preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>35<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>70<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>210<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 35 A, VGE= 15 V<br>IC= 35 A, VGE= 15 V<br>IC= 35 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,27<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,00<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,07<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 27Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 27Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 27Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 27Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 35 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, di/dt = 1100 A/µs (Tvj= 150°C)<br>RGon= 27Ω<br>Eon<br>3,90<br>5,10<br>5,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 35 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 27Ω<br>Eoff<br>2,10<br>3,10<br>3,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>130<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,72<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,335<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

> IGBT-ModuleIGBT-modules FP35R12KT4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|35|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|70|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|240<br>|A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 35 A, - diF/dt = 1100 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||35,0<br>39,0<br>40,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 35 A, - diF/dt = 1100 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,40<br>6,30<br>7,20||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 35 A, - diF/dt = 1100 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,10<br>2,20<br>2,50||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,00|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,46||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|70|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|80|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1000<br>685|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 35 A|VF||0,95||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,85|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,395||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0|||||||
|preparedby:AS|dateofpublication:2013-11-04||||||
|approvedby:RS|revision:2.0||||||



2 

> IGBT-ModuleIGBT-modules FP35R12KT4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FP35R12KT4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>25<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>160<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,45<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,05<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 37Ω<br>td on<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 37Ω<br>tr<br>0,03<br>0,04<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 37Ω<br>td off<br>0,34<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 37Ω<br>tf<br>0,05<br>0,07<br>0,08<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 37Ω<br>Eon<br>2,00<br>2,65<br>2,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 37Ω<br>Eoff<br>1,40<br>2,20<br>2,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>90<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,95<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,44<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



3 

> IGBT-ModuleIGBT-modules FP35R12KT4 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|15|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|30|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|48,0<br>|A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||20,0<br>22,0<br>23,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,50<br>2,50<br>2,70||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,55<br>0,90<br>1,00||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,50|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,695||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0 

4 

IGBT-Module IGBT-modules 

## FP35R12KT4 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlk6rper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,02||K/W|
|Modulstreuinduktivität<br>Chip<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -<br>Module lead resistance, terminals - chip|TC<br>~~ee ~~<br>= 25°C, pro Schalter / per switch|LsCE<br>RCC'+EE'<br>RAA'+CC'<br> ~~ee ee~~|35<br>4,00<br>3,00<br>~~ee~~|||nH<br>mΩ|
|Hoéchstzulassige Sperrschichttemperatur<br>Maximum junction temperature|Wechselrichter, Brems-Chopper/ inverter, brake-chopper<br>Gleichrichter/ rectifier|Tvj max|||175<br>150|°C<br>°C|
|Temperatur im Schaltbetrieb<br>Temperature under switching conditions|Wechselrichter, Brems-Chopper/ inverter, brake-chopper<br>Gleichrichter/ rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||180||g|



5 

## IGBT-Module IGBT-modules 

## FP35R12KT4 

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I output C  characteristic CE) IGBT,Inverter (typical) I output C characteristic CE) IGBT,Inverter (typical)<br>VGE “255 V Tvj =150°C<br>70 70<br>65 Tvj = 25°C 65 VGE = 19V<br>— Tvj = 125°C OL L VGE = 17V L<br>60 Tvj = 150°C pf 60 VVGEGE = 15V = 13V A Le<br>55 PT fk eel ED 55 VGE = 11V ieleseeee<br>VGE =   9V<br>50 Pot TT iA a | | 50 pL AA Pe<br>45 45<br>pf tt a a ee 6a oe<br>40 PP ttPe ee 40 P P EP veo<br>35 Pot 35 eee<br>30 PoP tt A 30 poe<br>25 | | | yea ||TT | 25 P to AAAY<br>20 Pottee eet | ET 20 po||<br>15 15<br>10 Pt  oe 10 Po if<br>5 P| tFE fT | ct tt 5 ney<br>Peyt| | | tt| | || PF2Ane<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


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I transfer C GE  characteristic ) IGBT,Inverter (typical) E switching on C losses off IGBT, C) Inverter (typical)<br>VCE oo VGE ~HeVR Gon S27 Ω ,R Goff =27 Ω ,V CE =600V<br>70 20<br>65 — Tvj = 25°C [ Eon, Tvj = 125°C pt<br>Tvj = 125°C 18 Eoff, Tvj = 125°C<br>60 fF Tvj = 150°C E-H Eon, Tvj = 150°C (i<br>Eoff, Tvj = 150°C<br>a 16 I a<br>5550 eee e eeee ee ea Pt a tt tT tT || TTc<br>14<br>a<br>45 Pot [te | | | | | | dT dT | | rT | FA<br>12<br>40 ee ee eee A<br>7 PT | | tT | TT Tr<br>35 10<br>FEES FERRER<br>30<br>8<br>25 Pf of | A 7<br>6<br>20 Pot EY Ptpitt t t T t T t eypat tt tte<br>A ER ee<br>15<br>4<br>Pie Aree P|a Tt | a eee |<br>10<br>2<br>a a ee<br>5<br>eT | | overt tT tT dt dT | | | |<br>0 P ett ||| 0 ee<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


6 

IGBT-Module IGBT-modules 

## FP35R12KT4 

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switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =35A,V CE =600V<br>12 1<br>=a EEonoff, T, Tvjvj = 125°C = 125°C P| tL feo TeH— ZthJC : IGBT SO E eee eee<br>Eon, Tvj = 150°C<br>10 f= Eoff, Tvj = 150°C booeeera Aa 2a) |<br>| | | ft EESLZ ZEnn aPLT VAI|ETT el<br>8<br>eS 26 ee eel7200<br>SaaecCORRE ane\~ IiHY<br>64 |ParePTT4 PfWz || dTTE tet| fettTET TLF 4|ddfo 0,1 Poi aa Aeeaaiel| el<br>2 att<br>i:    1    2    3    4<br>ri[K/W]:   0,0432   0,2376   0,2304   0,2088<br>SERSSRREREEE τ i[s]:    0,01    0,02    0,05    0,1    ||<br>PP CLE ‘oo l<br>0 0,01<br>0 20 40 60 80 100 120 140 160 180 200 220 240 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC CE)<br>VGE oe sy. R Goff =27 Ω ,T vj =150°C<br>80 70<br>IC, Modul 65 Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>EIJI) BRA<br>70 — 60 Tvj = 150°C PE TE<br>55<br>PTE) ee e<br>60<br>50 Pt<br>50 Pte) 45 eee e te<br>40<br>ee eeePit ett tT lg td<br>40 35<br>30<br>PT) FEE<br>30<br>25<br>20 peepee<br>CEPI) SRR eee<br>20<br>15<br>ee eee<br>ee 10 Pt tT TT eA<br>10<br>5<br>PET) EP eee<br>0 0 | TT<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


7 

## IGBT-Module IGBT-modules Technische Information / FP35R12KT4 Technical Information 

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E switching rec F) losses Diode, Inverter (typical) E switching rec G) losses Diode, Inverter (typical)<br>RGon 1S Ω ,V CE =600V IF = 36 AV CE = 600 V<br>3,5 LS 3,5 LS<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>3,0 3,0<br>a ee ee<br>2,5 2,5<br>e e r H E<br>e LEER EEE<br>2,0 2,0<br>LYALL<br>1,5 1,5<br>EE) Lr Rte<br>TALULA ELE<br>1,0 1,0<br>ULL EEE E E E E E<br>0,5 0,5<br>0,0 0,0<br>0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 180 200 220 240<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, Gleichrichter (typisch)<br>Z ren thJC impedance Diode, Inverter ome IF F) characteristic of Diode, Rectifier (typical)<br>10 70<br>ZthJC : Diode 65 Tvj = 25°C<br>Tvj = 150°C<br>60<br>HES EA | Se e<br>55<br>PT TUT TENE ETE SeGGeeeeeneee<br>50<br>1<br>eee 45<br>Ee 40 Pi ttt EEE ye<br>FeJ oC 35 Pit ET TET er<br>30<br>a aI al<br>ATE 25<br>0,1 / ET<br>|T/T7A TtTT TTTTTT 2015 PT | | tt LL VAR Ey<br>7 yey i:    1    2    3    4    10 PT | | | ft tla ye i dd]<br>ri[K/W]:   0,06   0,33   0,32   0,29<br>I T τ i[s]:    0,01    T 0,02   0,05   0,1    5 TTP PPA<br>0,01 UE imo) ,  = E 0 C E<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC  [A]IF<br>Z<br>**----- End of picture text -----**<br>


8 

IGBT-Module IGBT-modules 

## FP35R12KT4 

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IC =f(V CE) IF =f(V F)<br>VGE =15V<br>50 27<br>Tvj = 25°C Tvj = 25°C<br>45 Tvj = 125°C 24 Tvj = 125°C<br>F Tvj = 150°C e ee Tvj = 150°C<br>40<br>21<br>35<br>18<br>30<br>15<br>pfpi TTT TTT ATT<br>25<br>12<br>20<br>9<br>15<br>6<br>10<br>SCF tit t tat ty<br>5 3 [Lee]<br>PT [APT)]<br>PIA<br>0 0<br>TT TT Lee<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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100000<br>{— | Rtyp S a SeS A  eee<br>(a rs ce<br>e e ee eee<br>P EPEEEE EEE<br>10000<br>a ee<br>a<br>Ne ee ee ee ee ee ee ee ee<br>pot TNT tt<br>CAPR<br>NEE<br>1000<br>SSS<br>A<br>Pot eee eee<br>pjeeNe eee<br>Pt ftEP tftEE ftTE TTft t T tTTAHAE TT<br>SERRE RRRRRRRREE<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


9 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FP35R12KT4 

## **Schaltplan�/�circuit_diagram_headline** 

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## **Vorläufige�Daten Preliminary�Data** 

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J<br>**----- End of picture text -----**<br>


## **Gehäuseabmessungen�/�package�outlines** 

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**----- Start of picture text -----**<br>
In fin e o n<br>**----- End of picture text -----**<br>


prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0 

10 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FP35R12KT4 

## **Nutzungsbedingungen** 

## application. 

11 



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- [Supplier page](https://es.farnell.com/infineon/fp35r12kt4bpsa1/igbt-module-1-2kv-35a-210w-press/dp/3703592)
---

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