# IGBT Module, PIM Three Phase Input Rectifier, 37 A, 1.55 V, 125 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2839511/)

**URL**: https://novapart.co/products/FP30R06KE3BOSA1/igbt-module-pim-three-phase-input-rectifier-37-a
**SKU**: FP30R06KE3BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €55.2800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Product Range | EconoPIM 2 |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 125W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 37A |
| Power Dissipation Pd | 125W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 37A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Saturation Voltage Vce(On) | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839511/)

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FP30R06KE3 

**==> picture [86 x 38] intentionally omitted <==**

EconoPIM™2�Modul�mit�Trench/Feldstop�IGBT³�und�Emitter�Controlled3�Diode�� EconoPIM™2�module�with�trench/fieldstop�IGBT³�and�Emitter�Controlled3�diode�� 

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FP30R06KE3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EconoPIM™2ModulmitTrench/FeldstopIGBT³undEmitterControlled3Diode<br>EconoPIM™2modulewithtrench/fieldstopIGBT³andEmitterControlled3diode<br>preparedby:AS<br>approvedby:WR<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 65°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>37<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>125<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,43 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 56Ω<br>td on<br>0,10<br>0,10<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 56Ω<br>tr<br>0,06<br>0,065<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 56Ω<br>td off<br>0,60<br>0,65<br>0,70<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 56Ω<br>tf<br>0,04<br>0,045<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 600 A/µs (Tvj= 150°C)<br>RGon= 56Ω<br>Eon<br>1,40<br>1,70<br>1,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 2000 V/µs (Tvj= 150°C)<br>RGoff= 56Ω<br>Eoff<br>1,00<br>1,15<br>1,20<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,20<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,40<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

> IGBT-ModuleIGBT-modules FP30R06KE3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|600||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>82,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,05|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||22,0<br>24,0<br>27,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,15<br>2,30<br>2,70||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,12<br>0,30<br>0,36||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,80|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,60||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|60|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|50|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1000<br>685|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 30 A|VF||0,90||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,85|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,28||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|preparedby:AS<br>approvedby:WR<br>dateofpublication:2013-10-03<br>revision:2.0|||||||
|preparedby:AS|dateofpublication:2013-10-03||||||
|approvedby:WR|revision:2.0||||||



2 

> IGBT-ModuleIGBT-modules FP30R06KE3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FP30R06KE3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:WR<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 65°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>37<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>125<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,43 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 56Ω<br>td on<br>0,10<br>0,10<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 56Ω<br>tr<br>0,06<br>0,065<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 56Ω<br>td off<br>0,60<br>0,65<br>0,70<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 56Ω<br>tf<br>0,04<br>0,045<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 56Ω<br>Eon<br>1,40<br>1,70<br>1,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 56Ω<br>Eoff<br>1,00<br>1,15<br>1,20<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,20<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,40<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



3 

> IGBT-ModuleIGBT-modules FP30R06KE3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|15|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|30|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|28,0<br>21,0<br>|A²s<br>A²s|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,05|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 15 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||20,0<br>24,0<br>25,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 15 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,75<br>1,30<br>1,60||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 15 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,17<br>0,30<br>0,40||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||3,00|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,00||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�WR revision:�2.0 

4 

IGBT-Module IGBT-modules 

## FP30R06KE3 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 225|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlk6rper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,02||K/W|
|Modulstreuinduktivität<br>Chip<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -<br>Module lead resistance, terminals - chip|TC<br>~~ee ~~<br>= 25°C, pro Schalter / per switch|LsCE<br>RCC'+EE'<br>RAA'+CC'<br> ~~ee ee~~|60<br>4,00<br>3,00<br>~~ee~~|||nH<br>mΩ|
|Hoéchstzulassige Sperrschichttemperatur<br>Maximum junction temperature|Wechselrichter, Brems-Chopper/ inverter, brake-chopper<br>Gleichrichter/ rectifier|Tvj max|||175<br>150|°C<br>°C|
|Temperatur im Schaltbetrieb<br>Temperature under switching conditions|Wechselrichter, Brems-Chopper/ inverter, brake-chopper<br>Gleichrichter/ rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||180||g|



5 

## IGBT-Module IGBT-modules Technische Information / FP30R06KE3 Technical Information 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>60 60<br>55 | TTvjvj |  = 25°C = 125°C re ae ‘ 55 | VVGEGE = 19 V = 17 V Piel : A | tT<br>Tvj = 150°C VGE = 15 V<br>50 50 VGE = 13 V<br>| rr ee, 7 VGE = 11 V aA7 : | tT<br>45 e e 45 VGE =   9 V<br>7ee | pe| ey<br>e e e 7ea<br>40 40<br>, ; 7<br>35 35<br>ee 2<br>30 30<br>ep<br>25 25<br>ee<br>20 20<br>e e<br>15 15<br>10 ee ee 10 )<br>i 7<br>5 5<br>eee ty tt<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =4+15V,R Gon =56 Ω ,R Goff =56 Ω ,V CE =300V<br>60 5,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>55 Tvj = 125°C 4,5 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>50 FF | ge a Eoff, Tvj = 150°C<br>4,0<br>45<br>3,5<br>e e | | | | 7<br>40<br>35 fe es esee 3,0 e e<br>30 2,5<br>A<br>25 Z<br>2,0<br>20<br>if 1,5 Z<br>es ae ee ee<br>15<br>i pe |<br>1,0<br>10<br>5 0,5<br>0 EE 0,0 tT |<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


6 

## IGBT-Module IGBT-modules 

## FP30R06KE3 

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Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =30A,V CE =300V<br>5,0 — Eon ——_ , Tvj = 125°C 10 | U== Z =_—— thJC : IGBT ee0... S00; oes sana<br>4,5 = Eoff, Tvj = 125°C |) |) | | | dla ror HH— eEE eeHH} tHee<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C 4 PT TT TT<br>eA a e e |<br>4,03,5 T A inc r<br>1<br>Pee t<br>3,0 YZL a eet et<br>P} ) ft | ker) ty yd | rP T TT T Aeeeeee<br>2,5<br>P} = 0 |<br>2,0 fT ft | | Lee] maaan<br>0,1<br>THy, Leary= | LETTE<br>1,5<br>A (17) TTeee<br>1,0 PL 7earny | | | | | fd | 7Ze| Ti TT TE<br>i:    1    2    3    4<br>0,5 Pe e r τ ii[K/W]:   [s]:    T 0,072   0,01    0,396   0,02    0,384   0,05    0,348   0,1<br>0,0 0,01<br>0 20 40 60 80 100 120 140 160 180 200 220 240 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =56 Ω ,T vj =150°C<br>70 60<br>IC, Modul Tvj = 25°C<br>IC, Chip 55 Tvj = 125°C<br>= MmUl<br>60 Tvj = 150°C<br>50<br>45<br>50<br>40<br>40 35<br>30<br>30 25<br>20<br>20<br>15<br>10<br>10<br>5<br>ppt Pee<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


7 

## IGBT-Module IGBT-modules 

## FP30R06KE3 

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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =56 Ω ,V CE =300V IF =30A,V CE =300V<br>1,0 1,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>0,9 FELee Erec, Tvj = 150°C 0,9 IRE Erec, Tvj = 150°C E<br>0,8 0,8<br>0,7 0,7<br>0,6 0,6<br>0,5 0,5<br>PEE EEE EE tad ttt<br>0,4 0,4<br>St ee tN EE EE<br>0,3 0,3<br>tt | epee See<br>0,2 0,2<br>0,1 0,1<br>0,0 0,0<br>0 5 10 15 20 25 30 35 40 45 50 55 60 0 10 20 30 40 50 60 70 80 90 100 110 120<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


> IFF =f(V F)) 

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ZthJC = f(t) IFF =f(V F))<br>10 60<br>Pr —<br>ZthJC : Diode Tvj = 25°C<br>oro H— ssor [L] Fee [ETT] ee 55 F Tvj = 150°C a<br>i| e ie TT 50 i | | S F] Try yyy |<br>45<br>TMT V BP PT ELE EE<br>1 He LIN ETT 40 PLE | Ere<br>aSee ee S eee TT ary<br>PTaTTTTTTTT 3530 P| tot oT ey) dd]<br>||<br>25<br>0,1 20<br>(7 | TTeee<br>ae rTtiTTTTT eo 1510 P| | ft dey yo) dd]<br>i:    1    2    3    4<br>a a ri[K/W]:   0,108   0,594    | 0,576   0,522<br>τ i[s]:    0,01    0,02    0,05    0,1    5<br>ML a<br>0,01 moomo o Ss 0 E P<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>t [s] VF [V]<br> [K/W]thJC  [A]IF<br>Z<br>**----- End of picture text -----**<br>


8 

IGBT-Module IGBT-modules 

## FP30R06KE3 

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**----- Start of picture text -----**<br>
I output C  characteristic CE) IGBT, Brake-Chopper (typical) forward IF F) characteristic of Diode, Brake-Chopper (typical)<br>VGE<br>60 30<br>Tvj = 25°C 28 Tvj = 25°C<br>55 | Tvj = 125°C rr ee e e Tvj = 125°C n eee<br>Tvj = 150°C 26 Tvj = 150°C<br>Ee | Pt<br>50<br>24<br>a tt tA<br>45<br>22<br>40 ee ee oa 20 SeePP y  eeeree<br>a 18<br>35<br>2 ee eeeee<br>16<br>ee ee<br>30<br>ee ee 14 e eee<br>A) ee<br>25<br>12<br>“ P| | | | TT eT<br>ee<br>20 10<br>ee 8<br>15<br>6<br>10<br>ee eee ee ee 4 ee<br>J  ee ee<br>5 ey [ae] soe ee 2 e ee ee<br>eZ Pt tt tes<br>0 0<br> | ee<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE  [V] VF [V]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R= f(T)<br>100000<br>= Rtyp =<br>(Rar ce<br>a<br>p t<br>PEEP<br>10000<br>—————<br>ee<br>a Ne ee ee<br>pot NE<br>pp Nf<br>1000 EEN<br>eees ee<br>(a<br>a ee ee ee ee<br>100 os<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A]  [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


9 

Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules FP30R06KE3 

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## **Schaltplan�/�circuit_diagram_headline** 

## **Vorläufige�Daten Preliminary�Data** 

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## **Gehäuseabmessungen�/�package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�WR revision:�2.0 

10 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FP30R06KE3 

## **Nutzungsbedingungen** 

## application. 

11 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/fp30r06ke3bosa1/igbt-module-n-ch-600v-37a/dp/2839511)
---

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