# IGBT Module, PIM Three Phase Input Rectifier, 39 A, 1.85 V, 175 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2726161/)

**URL**: https://novapart.co/products/FP25R12W2T4BOMA1/igbt-module-pim-three-phase-input-rectifier-39-a
**SKU**: FP25R12W2T4BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €30.9400
**Stock**: 25+
**Lead Time**: 120 days (indicative)

## Description

Transistor Polarity:N Channel; DC Collector Current:39A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:175W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPIM 2B |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 175W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Transistor Polarity | N Channel |
| Dc Collector Current | 39A |
| Power Dissipation Pd | 175W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 39A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726161/)

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP25R12W2T4 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

## **初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>FP25R12W2T4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:2.2<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>25<br>39<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>175<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,45<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,05<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 20Ω<br>td on<br>0,026<br>0,026<br>0,026<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 20Ω<br>tr<br>0,016<br>0,02<br>0,021<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 20Ω<br>td off<br>0,19<br>0,28<br>0,30<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 20Ω<br>tf<br>0,18<br>0,21<br>0,22<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 1700 A/µs (Tvj= 150°C)<br>RGon= 20Ω<br>Eon<br>1,60<br>2,40<br>2,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 20Ω<br>Eoff<br>1,45<br>2,15<br>2,35<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>90<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,75<br>0,85<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,70<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP25R12W2T4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|25|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>75,0|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||48,0<br>50,0<br>52,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 25 A, - diF/dt = 1700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,50<br>4,40<br>4,90||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,95<br>1,75<br>2,05||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||1,10|1,20|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,90||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **二极管,整流器�/�Diode,�Rectifier 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 100°C|IFRMSM|60|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 100°C|IRMSM|60|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1000<br>685|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 25 A|VF||0,90||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||1,05|1,15|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,95||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op||||°C|



|preparedby:DK|dateofpublication:2013-10-03|
|---|---|
|approvedby:MB|revision:2.2|



2 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP25R12W2T4 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�制动-斩波器�/�IGBT,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP25R12W2T4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:2.2<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,制动-斩波器/IGBT,Brake-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>25<br>39<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>175<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,45<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,05<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 68Ω<br>td on<br>0,08<br>0,08<br>0,08<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 68Ω<br>tr<br>0,042<br>0,051<br>0,053<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 68Ω<br>td off<br>0,34<br>0,44<br>0,46<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 68Ω<br>tf<br>0,18<br>0,215<br>0,225<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 68Ω<br>Eon<br>3,90<br>5,00<br>5,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 68Ω<br>Eoff<br>1,50<br>2,20<br>2,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>90<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,75<br>0,85<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,70<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



3 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP25R12W2T4 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **二极管，制动-斩波器�/�Diode,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|10|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|16,0<br>14,0|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||12,0<br>10,0<br>8,00||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,90<br>1,70<br>1,90||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,24<br>0,52<br>0,59||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||1,75|1,90|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,30||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.2 

4 

> IGBT-模块IGBT-modules FP25R12W2T4 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **模块�/�Module** 

|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||AI2O3||||
|爬电距离<br>Creepagedistance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||11,5<br>6,3|||mm|
|电气间隙<br>Clearance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||10,0<br>5,0|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|杂散电感,模块<br>Strayinductancemodule||LsCE||30||nH|
|模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'<br>RAA'+CC'||5,00<br>6,00||mΩ|
|储存温度<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|重量<br>Weight||G||39||g|



Der Strom im Dauerbetrieb ist auf 30A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 30A rms per connector pin. 

prepared�by:�DK approved�by:�MB 

date�of�publication:�2013-10-03 revision:�2.2 

5 

IGBT-模块 IGBT-modules 

## FP25R12W2T4 

## **初步数据** 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>50 | , a 50 es | fo<br>Tvj = 25°C VGE = 19V<br>45 Tvj = 125°C pov ‘ ma 45 VGE = 17V Ul ra 7<br>Tvj = 150°C ee | | VGE = 15V LE Le<br>VGE = 13V<br>40 ee e 40 VGE = 11V<br>ee | VGE = 9V LAA<br>35 pe 35 |<br>ppee| Je eas<br>30 30<br>pr a eT<br>25 25<br>Ae ’ / / vA°<br>20 20<br>15 ee ee 15<br>i ee<br>10 10<br>5 5<br>pit<br>0 0<br>| CLA<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 1,0 2,0 3,0 4,0 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (BB) FFHIRE IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =4+15V,R Gon =20 Ω ,R Goff =20 Ω ,V CE =600V<br>50 10,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>45 Tvj = 125°C 9,0 Eoff, Tvj = 125°C<br>EF Tvj = 150°C LOY Fo Eon, Tvj = 150°C e<br>Eoff, Tvj = 150°C<br>40 8,0<br>ea E P oco<br>pt }<br>35 7,0<br>| et ey EE at<br>30 6,0<br>CCE CT evi<br>25 5,0<br>20 4,0<br>15 3,0<br>pt | | A i ee<br>10 2,0<br>ee ee ee ee oe<br>Pe<br>5 1,0<br>per 2b eee eee4c<br>0 TT 0,0 Pee<br>5 6 7 8 9 10 11 12 13 0 10 20 30 40 50<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FP25R12W2T4 

## **初步数据** 

**==> picture [486 x 599] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon ={(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =25A,V CE =600V<br>12 10<br>11 i— EEonoff ———— , T, Tvjvj = 125°C = 125°C 1 ] | ttt (H— ZthJH : IGBT Sooa casts aa sett el<br>Eon, Tvj = 150°C<br>10 E Eoff, Tvj = 150°C o Titi TT<br>P o<br>9<br>8<br>pt ET eeeh | E PTEnT<br>7<br>pf ETI EET<br>6 Pttttbeert| | 1 eL ee<br>Wz | I<br>54 VannPtP| lerder7 | | |] | dd A ZASSpTeeTyeeeea eeeee eeciteenee<br>3<br>2 | Entetegepcpaesssva | P E PEA i:    1    2    3    4<br>ri[K/W]:   0,084    0,195   0,587   0,585<br>1 Pte | (CME τ i[s]:    0,0005     c 0,005   0,05    r 0,2<br>0 Pt EE |E E T ET 0,1 V aAN | ol P|l<br>0 20 40 60 80 100 120 140 160 180 200 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RwRELIEK IGBT, #2 ( RBSOA ) Fa mESstt Re ee ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE “i sV.R Goff =20 Ω ,T vj =150°C a<br>55 50<br>IC, Modul Tvj = 25°C<br>50 I C , Chip 45 Tvj = 125°C<br>Tvj = 150°C<br>Fe L_Li TT T rn<br>45 yy | S e ee<br>40<br>40<br>Fe ee ee 35<br>35<br>ee eee ee<br>30<br>30<br>25<br>25<br>20<br>20<br>15<br>15<br>10<br>10<br>5 5<br>SEE EE ae<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


7 

IGBT-模块 IGBT-modules 

## FP25R12W2T4 

## **初步数据** 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon ay Ω »,V CE =600V IF my CE = 600 V<br>4,0 3,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>ee Erec, Tvj = 150°C 2,7 Erec, Tvj = 150°C<br>3,5 e e ee<br>2,4<br>3,0<br>2,1<br>2,5<br>1,8<br>2,0 1,5<br>1,2<br>1,5 Pobree t bert)iti} ENRpe [Ne] EEE EE<br>oO PENEEL<br>0,9<br>1,0 EPZanReeee“/ aes|<br>0,6<br>0,5 ALTE EEL Ty ppt pe<br>0,3<br>0,0 0,0<br>0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 140 160 180 200<br>IF [A] RG [ Ω ]<br>PAS ihe ees FOmEst hE Bis ( BB)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJH =f (t) IF =f(V F)<br>10 50<br>EE oo<br>ZthJH: Diode Tvj = 25°C<br>Tt ioo T T 45 Tvj = 150°C f<br>e| eee lll| 40 T T ) tL RR<br>35<br>30<br>040 0 ed<br>1 25<br>Ee tee :<br>eea ee ee ell 20 Pi] t | aA: Ed<br>AATeAMAME EETTTE |ETETETET| 1510 PTPt} | | LgLARyy PJydde<br>i:    1    2    3    4<br>7 | r τ ii[K/W]:   [s]:    0,166   0,0005   0,359   0,005   0,821   0,05    0,654   0,2    5 Seeeenveeeee<br>0,1 Tl eel 0 PLE pr<br>0,001 0,01 0,1 1 10 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJH  [A]IF<br>Z<br>**----- End of picture text -----**<br>


8 

## IGBT-模块 IGBT-modules 

## FP25R12W2T4 

## **初步数据** 

**==> picture [486 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IF =f(V F)<br>VGE =15V<br>50 a , a“ 20 | / “<br>Tvj = 25°C Tvj = 25°C<br>45 Tvj = 125°C 18 Tvj = 125°C<br>Tvj = 150°C Tvj = 150°C<br>ne fF L L ae<br>40 o o l  ae 16 Po o ft<br>35 fe 14<br>30 12<br>25 10<br>20 8<br>15 6<br>10 4<br>pf pot<br>5 2<br>0 Ly | | | 0 CO GE ZEE EE<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
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9 

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**----- Start of picture text -----**<br>
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10 

IGBT-模块 IGBT-modules 

## FP25R12W2T4 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 

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11 



## Links

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- [Supplier page](https://es.farnell.com/infineon/fp25r12w2t4boma1/igbt-module-n-ch-1-2kv-39a/dp/2726161)
---

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