# IGBT Module, PIM Three Phase Input Rectifier, 25 A, 1.6 V, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3019520/)

**URL**: https://novapart.co/products/FP25R12W1T7B11BPSA1/igbt-module-pim-three-phase-input-rectifier-25-a
**SKU**: FP25R12W1T7B11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €23.9700
**Stock**: 10+
**Lead Time**: 64 days (indicative)

## Description

Transistor Polarity:Six N Channel; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transi

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 23Pins |
| Product Range | EasyPIM TRENCHSTOP |
| Igbt Technology | IGBT 7 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | - |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Transistor Polarity | Six N Channel |
| Dc Collector Current | 25A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 25A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Saturation Voltage Vce(On) | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3019520/)

## FP25R12W1T7_B11 

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**----- Start of picture text -----**<br>
VCES = 1200V<br>IC nom = 25A / ICRM = 50A<br>**----- End of picture text -----**<br>


- Hilfsumrichter 

- Klimaanlagen 

- • Motorantriebe 

- CEsat 

- Trenchstop[TM] 

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- Al2O3 Substrat mit kleinem thermischen Widerstand 

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- 

- 

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- 

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- CEsat 

- • Trenchstop[TM] 

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- Al2O3 

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## **Digit** 

Datasheet www.infineon.com 

2018-12-13 

FP25R12W1T7_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 60°C, Tvj max= 175°C|ICDC|25|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|50|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 25 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,60<br>1,74<br>1,82|t.b.d.|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,50 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,395||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||4,77||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,017||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||0,0056|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,037<br>0,039<br>0,04||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,02<br>0,024<br>0,025||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,20<br>0,28<br>0,38||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,18<br>0,29<br>0,35||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 25 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 950 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||1,55<br>2,10<br>2,45||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 25 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 2700 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||2,10<br>3,05<br>3,65||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤7 µs,|ISC||80<br>75||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||1,55||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



2 

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Datasheet 

FP25R12W1T7_B11 

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## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|25|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|72,5<br>63,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,83<br>1,70<br>1,63|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 950 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||24,2<br>32,4<br>37,6||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 25 A, - diF/dt = 950 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||2,25<br>3,82<br>4,95||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 950 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||0,65<br>1,41<br>1,87||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||2,04||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
|**Diode,Gleichrichter/Diode,Rectifier**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||||
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|||V|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TH= 100°C|IFRMSM|<br>25|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TH= 100°C|IRMSM|25|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|300<br>245|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|450<br>300|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 10 A|VF||0,80||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||1,54||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



3 

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Datasheet 

FP25R12W1T7_B11 

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## **Vorläufige�Daten Preliminary�Data** 

|**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 60°C, Tvj max= 175°C|ICDC|25|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|50|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 25 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,60<br>1,74<br>1,82|t.b.d.|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,50 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V|QG||0,395||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||4,77||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,017||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||0,0056|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,058<br>0,06<br>0,061||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,055<br>0,057<br>0,058||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,20<br>0,28<br>0,38||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,18<br>0,29<br>0,35||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 25 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 320 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||2,15<br>2,65<br>2,90||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 25 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 2700 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||2,10<br>3,05<br>3,65||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤7 µs,|ISC||80<br>75||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||1,55||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



V�2.0 2018-12-13 

Datasheet 

4 

FP25R12W1T7_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|10|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|27,5<br>24,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,72<br>1,59<br>1,52|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 300 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||8,10<br>10,1<br>11,7||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 10 A, - diF/dt = 300 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||0,74<br>1,37<br>1,84||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 300 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||0,26<br>0,52<br>0,72||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||2,45||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

V�2.0 2018-12-13 

Datasheet 

5 

FP25R12W1T7_B11 

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## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|2,5<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||AI203||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||8,00<br>6,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|Gewicht<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. 

The current under continuous operation is limited to 25A rms per connector pin. Tvj op > 150°C ist im Überlastbetrieb zulässig. Detaillierte Angaben sind AN 2018-14 zu entnehmen 

Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. 

6 

V�2.0 2018-12-13 

Datasheet 

FP25R12W1T7_B11 

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## **Vorläufige�Daten Preliminary�Data** 

**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C 

**==> picture [484 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 50<br>Tvj = 25°C VGE = 19 V<br>Tvj = 125°C VGE = 17 V<br>45 T vj  = 175°C 45 V GE  = 15 V<br>VGE = 13 V<br>VGE = 11 V<br>40 40 V GE  =   9 V<br>35 35<br>30 30<br>25 25<br>20 20<br>15 15<br>10 10<br>5 5<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

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50<br>Tvj = 25°C<br>Tvj = 125°C<br>45 T vj  = 175°C<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>5 6 7 8 9 10 11 12 13 14<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�6.2� Ω ,�RGoff�=�6.2� Ω ,�VCE�=�600�V 

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10<br>Eon, Tvj = 125°C<br>Eon, Tvj = 175°C<br>9 E off , T vj  = 125°C<br>Eoff, Tvj = 175°C<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>IC [A]<br>**----- End of picture text -----**<br>


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7 

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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =25A,V CE =600V VGE =415V,R Gon =62 Ω ,R Goff =62 Ω ,V CE =600V,T vj =175°C<br>10,0 10<br>EEonon, T, Tvjvj = 125°C = 175°C /7 eeY| ttdon r eea<br>9,0 E off , T vj  = 125°C / t doff ee<br>Eoff, Tvj = 175°C 7 t f<br>8,0 7<br>7<br>1<br>Wa<br>7,0<br>6,0<br>5,0 0,1<br>Pee<br>4,0<br>3,0<br>-——7  ” - = _— <=<br>/ 0,01 yo |<br>Z<br>2,0 7 [ t<br>1,0<br>0,0 0,001<br>0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>


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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) dv/dt= f(R G)<br>VGE =415V,1 C =25A,V CE =600V,T vj =175°C VGE =+15V,V CE =600V,T vj =25°C<br>10 a a 10 Lf<br>tdon dv/dt,10-90-on at 1/10 Inom<br>t r dv/dt,10-90-off at Inom<br>t doff 9<br>t f<br>8<br>1<br>7<br>6<br>0,1 5<br>ceee ee ee<br>Pee 4 to me~N<br>~<br>3<br>0,01<br>(a 2<br>1<br>0,001 0<br>0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70<br>RG [ Ω ] RG [ Ω ]<br>t [µs]<br>dv/dt [V/ns]<br>**----- End of picture text -----**<br>


8 

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## **(RBSOA)** 

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ZthJH =f (t)<br>10<br>ZthJH : IGBT<br>ee tt<br>1<br>OePEesnivammat<br>Semaineatall sail email<br>0,1<br>i: 1 2 3 4<br>ri[K/W]: 0,083 0,305 0,763 0,399<br>τ i[s]: 0,000725 0,0137 0,0901 0,448<br>0,01 1<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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IC =f(V CE)<br>VGE ss V,R Goff =62 Ω ,T vj =175°C<br>60<br>IC, Modul<br>55 IC, Chip<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>Pot | |<br>0 200 400 600 800 1000 1200 1400<br>VCE  [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


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C=f(V CE) VGE =f(Q G)<br>VGE i OV,T vj = 285°C, f= 100kHz IC = OBA T vj =25°C<br>100 15<br>C ies VCC =  600V<br>| Coes a a<br>C res 12<br>10 ee ee ee es 9<br>6<br>1 HEE 3<br>re<br>0<br>po|<br>0,1 aN -3<br>eeeq ~<br>eeee<br>-6<br>0,01 -9<br>e eee ee ee/<br>-12<br>0,001 CET EEE -15 Jo<br>0 10 20 30 40 50 60 70 80 90 100 0,00 0,10 0,20 0,30 0,40<br>VCE [V] QG [µC]<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>


9 

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> IF =f(V F)) 

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F =f(V F)) Erec =fi(l F)<br>RGon =6.2 Ω ,V CE =600V<br>50 2,5<br>Tvj = 25°C Erec, Tvj = 125°C<br>Tvj = 125°C Erec, Tvj = 175°C<br>45 T vj  = 175°C<br>40 7 2,0 a<br>7<br>/ 7<br>35 1 /<br>30 1,5<br>25<br>20 1,0<br>15<br>10 0,5<br>5 a 7 7a<br>“7<br>0 ueZa 0,0<br>0,0 0,5 1,0 1,5 2,0 2,5 0 5 10 15 20 25 30 35 40 45 50<br>VF [V] IF [A]<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>


> Erec =f(R G) 

> IF =25A,V CE 

ZthJH 

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2,5 10 aee<br>= EErecrec, T, Tvjvj = 125°C = 175°C | eeHEH ZthJH : Diode eee<br>2,0<br>Seti tientee ee eee<br>\<br>1<br>1,5 SSeopal<br>Set antec ett<br>1,0<br>0,1<br>0,5<br>i: 1 2 3 4<br>ri[K/W]: 0,133 0,33 0,859 0,718<br>τ i[s]: 0,00562 0,00778 0,0473 0,203<br>0,0 0,01<br>0 10 20 30 40 50 60 70 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IF =f(V F)<br>**----- End of picture text -----**<br>


ZthJH 

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20 10<br>Tvj = 25°C ZthJH: Diode<br>Tvj = 150°C<br>18 = |; e reestieenmsete<br>| ft eeetectil eee<br>| noo<br>16<br>a ee|<br>14<br>1<br>12<br>Doe ee | eepo Aee<br>ne<br>10<br>| IC<br>8 |<br>| 0,1 /<br>6<br>/ mete ection<br>4 ee<br>i: 1 2 3 4<br>2 ri[K/W]: 0,086 0,208 0,706 0,54<br>τ i[s]: 0,00145 0,0162 0,0831 0,282<br>_-a po EE TT<br>0 0,01<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 0,001 0,01 0,1 1 10<br>VF [V] t [s]<br> [A]IF  [K/W]thJH<br>Z<br>**----- End of picture text -----**<br>


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IC =f(V CE) IF =f(V F)<br>VGE =15V<br>50 20<br>Tvj = 25°C Tvj = 25°C<br>Tvj = 125°C Tvj = 125°C<br>45 T vj  = 175°C 18 T vj  = 175°C<br>40 16<br>35 14<br>ee //ee/ / ee es//<br>i/<br>30 // 12<br>li;<br>25 I I; 10<br>20 8<br>Hi /]<br>15 i 6 /// /<br>10 Sf 4<br>5 2<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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## **Vorläufige�Daten Preliminary�Data** 

## **NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T) 

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100000<br>Rtyp<br>10000<br>1000<br>100<br>0 20 40 60 80 100 120 140 160<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


12 

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FP25R12W1T7_B11 

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## **Schaltplan�/�Circuit�diagram** 

## **Vorläufige�Daten Preliminary�Data** 

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J<br>**----- End of picture text -----**<br>


## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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13 

V�2.0 2018-12-13 

Datasheet 

## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/FP25R12W1T7B11BPSA1/igbt-module-pim-three-phase-input-rectifier-25-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fp25r12w1t7b11bpsa1/igbt-module-1-2kv-25a-175-deg/dp/3019520)
---

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