# IGBT Module, PIM Three Phase Input Rectifier, 25 A, 1.85 V, 160 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2377259/)

**URL**: https://novapart.co/products/FP25R12KT4BOSA1/igbt-module-pim-three-phase-input-rectifier-25-a
**SKU**: FP25R12KT4BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €46.8800
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:NPN; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case St

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 23Pins |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 160W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Transistor Polarity | NPN |
| Dc Collector Current | 25A |
| Power Dissipation Pd | 160W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 25A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2377259/)

IGBT-模块 IGBT-modules 

## FP25R12KT4 

VCES = 1200V IC nom = 25A / ICRM = 50A 

## **典型应用** 

- 电机传动 

- 伺服驱动器 

- 

- 

## **电气特性** 

- 

- 低开关损耗 

- • 沟槽栅IGBT4 

- T 

- 

- 

- 

- T 

## **机械特性** 

- 高功率循环和温度循环能力 

- 集成NTC温度传感器 

- 绝缘的基板 

- • 铜基板 • 焊接技术 

- 符合RoHS 

- 标封装 

- 

- 

- 

- 

- 

- 

- 

1 

> IGBT-模块IGBT-modules FP25R12KT4 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP25R12KT4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-05<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>25<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>160<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,45<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,05<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 18Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 18Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 18Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 18Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, di/dt = 900 A/µs (Tvj= 150°C)<br>RGon= 18Ω<br>Eon<br>1,80<br>2,40<br>2,65<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 18Ω<br>Eoff<br>1,40<br>2,20<br>2,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>90<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,95<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,36<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

> IGBT-模块IGBT-modules FP25R12KT4 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|25|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>75,0|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 900 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||48,0<br>50,0<br>52,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 25 A, - diF/dt = 900 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,50<br>4,40<br>4,90||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 900 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,00<br>1,80<br>2,10||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||1,35|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,51||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **二极管,整流器�/�Diode,�Rectifier 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|50|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|80|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1000<br>685|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 25 A|VF||0,90||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,85|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,32||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-05<br>revision:3.0|||||||
|preparedby:AS|dateofpublication:2013-11-05||||||
|approvedby:RS|revision:3.0||||||



3 

> IGBT-模块IGBT-modules FP25R12KT4 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�制动-斩波器�/�IGBT,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP25R12KT4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-05<br>revision:3.0<br>**IGBT,制动-斩波器/IGBT,Brake-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>15<br>28<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>30<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>105<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 15 A, VGE= 15 V<br>IC= 15 A, VGE= 15 V<br>IC= 15 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,48 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,12<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>0,89<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,03<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 43Ω<br>td on<br>0,065<br>0,065<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 43Ω<br>tr<br>0,06<br>0,065<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 43Ω<br>td off<br>0,21<br>0,28<br>0,285<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 43Ω<br>tf<br>0,17<br>0,20<br>0,225<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, di/dt = 500 A/µs (Tvj= 150°C)<br>RGon= 43Ω<br>Eon<br>1,35<br>1,80<br>2,00<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 43Ω<br>Eoff<br>0,85<br>1,20<br>1,35<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>55<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>1,40<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,53<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



4 

> IGBT-模块IGBT-modules FP25R12KT4 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **二极管，制动-斩波器�/�Diode,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|10|A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|16,0<br>|A²s|



## **特征值�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||12,0<br>10,0<br>8,00||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,90<br>1,70<br>1,90||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,24<br>0,52<br>0,59||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||2,30|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,875||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�AS date�of�publication:�2013-11-05 approved�by:�RS revision:�3.0 

5 

IGBT-模块 IGBT-modules 

## 技术信息�/�Technical�Information 

## FP25R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

## **模块�/�Module** 

|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|模块基板材料<br>Materialofmodulebaseplate|||Cu||||
|内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|爬电距离<br>Creepagedistance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||10,0|||mm|
|电气间隙<br>Clearance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||7,5|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个模块/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,02||K/W|
|杂散电感,模块<br>Strayinductancemodule||LsCE||60||nH|
|模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'<br>RAA'+CC'||4,00<br>3,00||mΩ|
|最大结温<br>Maximumjunctiontemperature|逆变器,制动-斩波器/inverter,brake-chopper<br>整流器/rectifier|Tvj max|||175<br>150|°C<br>°C|
|在开关状态下温度<br>Temperatureunderswitchingconditions|逆变器,制动-斩波器/inverter,brake-chopper<br>整流器/rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|储存温度<br>Storagetemperature||Tstg|-40||125|°C|
|模块安装的安装扭距<br>Mountingtorqueformodulmounting|螺丝M5根据相应的应用手册进行安装<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm|
|重量<br>Weight||G||180||g|



bei Betrieb mit Vge = 0V/+15V empfehlen wir einen Rgon,min von 36 Ohm und eine Rgoff,min von 36 Ohm (siehe AN 2006-01) for operation with Vge= 0V/+15V  we recommend a Rgon,min of 36 ohms and a Rgoff,min of 36 ohms (see AN 2006-01) 

prepared�by:�AS approved�by:�RS 

date�of�publication:�2013-11-05 revision:�3.0 

6 

## IGBT-模块 IGBT-modules 

## FP25R12KT4 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>50 a 7 50 es | [ov<br>Tvj = 25°C VGE = 19V<br>45 Tvj = 125°C 45 VGE = 17V<br>fFL Tvj = 150°C yle | VGE = 15V Li AeLe<br>VGE = 13V<br>40 Bs 40 VGE = 11V faneee<br>VGE =   9V<br>35 35<br>Pi vaEE J ee<br>Peery} PEE aa<br>30 30<br>25 25<br>ppdaw Lay eT<br>20 20<br>pti veea , Pt ELeei; 4<br>15 Se eee eee) 15 vAcee<br>iee 2c<br>10 10<br>5 5<br>PTLET PT gee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =18 Ω ,R Goff =18 Ω ,V CE =600V<br>50 10<br>Tvj = 25°C Eon, Tvj = 125°C<br>45 Tvj = 125°C 9 Eoff, Tvj = 125°C<br>F Tvj = 150°C WY FO Eon, Tvj = 150°C O<br>Eoff, Tvj = 150°C<br>40 8<br>e — | Ee t ooo<br>35 7<br>pt | | ee E t<br>30 6<br>pt | | PE<br>25 eee 5 Ane<br>eee ae<br>20 4<br>15 3<br>Pt | | AL TEae eeAe<br>10 ee y 2 TA aa -<br>2A ee eeae co<br>5 1<br>per]<br>0 0<br>| | Zane<br>5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 35 40 45 50<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


7 

## IGBT-模块 IGBT-modules 

## FP25R12KT4 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =25A,V CE =600V<br>10 10<br>Eon, Tvj = 125°C ZthJC : IGBT<br>9 =a Eoff, Tvj = 125°C r it tf fo [Re peHH—|EE HH} tH<br>Eon, Tvj = 150°C a<br>Eoff, Tvj = 150°C<br>8 al ee on Con oi eelCoo<br>7<br>TT T 1 neni<br>6 ee ee ee aeee<br>5 Pt tf ff ff yd YTa ETT YT a ee eeTTT|<br>4 Pf ff ff erp b SN,a a ee |<br>0,1<br>3 PEST| TT} Ls<br>2 | gereS fo fof itt ts PAHoEtt HHtLEH<br>i:    1    2    3    4<br>1 ee ee e r τ ii[K/W]:   [s]:    e 0,057   0,01    0,3135   0,02    0,304   0,05    0,2755   0,1<br>0 PEEL TLE EE E y 0,01 PMILE oTil ll<br>0 20 40 60 80 100 120 140 160 180 200 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA ) Fa mESst REGS ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =18 Ω ,T vj =150°C<br>55 50<br>IC, Modul Tvj = 25°C<br>50 i I C , Chip 45 Tvj = 125°C<br>Tvj = 150°C<br>aT<br>45<br>40<br>40<br>ty Pry yy<br>pf ft i} O e 35<br>ptt<br>35<br>tt td 30 Pry<br>30<br>25<br>So Ce<br>25<br>a CECE<br>20<br>20<br>15<br>15<br>10<br>10 Pf Seeeeeveeeee<br>Paws<br>5 Pf fF f fft 5 PLeyY/<br>0 P| | | | | yy 0 EE RE  Zana<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FP25R12KT4 

**==> picture [487 x 279] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon ane Ω »,V CE =600V IF my CE = 600 V<br>5,0 5,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>4,5 FEL Erec, Tvj = 150°C t 4,5 I Erec, Tvj = 150°C RE<br>4,0 4,0<br>3,5 3,5<br>3,0 3,0<br>2,5 2,5<br>2,0 2,0<br>Pt | pepe yey aff tt td<br>1,5 PoohTP pp 1,5 Pe RAR eet<br>1,0 Piagetett tty 1,0 UEEEEEE<br>0,5 0,5<br>0,0 0,0<br>0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 140 160 180 200<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


> IFF =f(V F)) 

**==> picture [486 x 280] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZthJC =f (t) IFF =f(V F))<br>10 50<br>SSE —<br>ZthJC : Diode Tvj = 25°C<br>oro $F PT a E TT SIP TTT] 4540 (ee mT Td Tvj = 150°C ) LLL EAI<br>35<br>THM Tre e e l EEE<br>1<br>a<br>eePEEce 30 PTT TE TT yy Ary |<br>aaPTPC ETEnnZA LTTee eeTTT] 25 Pi] tT ft LR<br>20<br>ROP TTI MR ITTTIMERITIHTIMA Ati Pi] tf ty pad<br>0,1<br>AMAT ANE CCt<br>15<br>(7 TT 1<br>VT TT TTT TTT] 10 ,<br>i:    1    2    3    4<br>roilicost=t I =“‘SéSésMSCO;*;*WC r τ ii[K/W]:   [s]:    l 0,081   0,01    0,4455   0,02    0,432   0,05    0,3915   0,1    C 5 A/<br>0,01 LM mcm 3S 0 EEE EEE EE  VEE<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2<br>t [s] VF [V]<br> [K/W]thJC  [A]IF<br>Z<br>**----- End of picture text -----**<br>


9 

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**----- Start of picture text -----**<br>
IGBT-模块<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FP25R12KT4 

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**----- Start of picture text -----**<br>
I oy C characteristic CE)  IGBT, Brake-Chopper (typical) fom. IF F  characteristic ) of Diode, Brake-Chopper (typical)<br>VGE =15V<br>30 20<br>Tvj = 25°C Tvj = 25°C<br>Tvj = 125°C 18 Tvj = 125°C<br>L Tvj = 150°C T] T Tvj = 150°C ee<br>25<br>ee 16 ee<br>14<br>20<br>PoP A ee 12 Saccseeeren<br>ee2 ee<br>15 10<br>PPT<br>PoP [te] 8<br>10<br>pt | el ET PP 6 A<br>4<br>5<br>Pot i | Saaee54neeen<br>2<br>P| vt | | tT gL<br>0 pie | | | 0 i erLE<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br>REBARBB BEBE<br>NTC-Thermistor-temperature characteristic (typical)<br>R=f(T)<br>100000<br>= Rtyp<br>ee<br>p t<br>Soe<br>10000<br>a<br>———<br>pot NE<br>pp Nf<br>ERNE<br>1000<br>SSS SSS =<br>ee<br>a ee ee ee ee<br>CHP es<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A]  [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


10 

技术信息�/�Technical�Information IGBT-模块 IGBT-modules 

## FP25R12KT4 

**==> picture [86 x 38] intentionally omitted <==**

## **接线图�/�circuit_diagram_headline** 

**==> picture [7 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
J<br>**----- End of picture text -----**<br>


## **封装尺寸�/�package�outlines** 

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**----- Start of picture text -----**<br>
In fin e o n<br>**----- End of picture text -----**<br>


prepared�by:�AS date�of�publication:�2013-11-05 approved�by:�RS revision:�3.0 

11 

IGBT-模块 IGBT-modules 

## FP25R12KT4 

## **使用条件和条款** 

使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 

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12 



## Links

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- [Supplier page](https://es.farnell.com/infineon/fp25r12kt4bosa1/igbt-module-npn-1-85v-25a/dp/2377259)
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