# IGBT Module, Seven Pack, 40 A, 1.7 V, 155 W, 125 °C, Module

![Product image](https://novapart.co/image/farnell:3703597/)

**URL**: https://novapart.co/products/FP25R12KT3BPSA1/igbt-module-seven-pack-40-a-17-v-155-w-125-c
**SKU**: FP25R12KT3BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €51.8000
**Stock**: 10+
**Lead Time**: 106 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | - |
| Igbt Technology | IGBT 3 [Trench] |
| Igbt Termination | Press Fit |
| Power Dissipation | 155W |
| Igbt Configuration | Seven Pack |
| Transistor Mounting | Panel |
| Dc Collector Current | 40A |
| Power Dissipation Pd | 155W |
| Transistor Case Style | Module |
| Operating Temperature Max | 125°C |
| Junction Temperature Tj Max | 125°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Saturation Voltage Vce(On) | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3703597/)

> IGBT-ModuleIGBT-modules FP25R12KT3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

|TechnischeInformation/TechnicalInformation<br>FP25R12KT3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>25<br>40<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>155<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,70<br>1,90<br>2,15<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,24<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>8,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,80<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,064<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 36Ω<br>td on<br>0,09<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 36Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 36Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 36Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V<br>RGon= 36Ω<br>Eon<br>2,40<br>3,50<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V<br>RGoff= 36Ω<br>Eoff<br>1,80<br>2,10<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>100<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,80<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C||



|preparedby:AS|dateofpublication:2013-10-03|
|---|---|
|approvedby:RS|revision:2.0|



1 

> IGBT-ModuleIGBT-modules FP25R12KT3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|25|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|170|||A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,65<br>1,65|2,15|V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 700 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||26,0<br>24,0||A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 25 A, - diF/dt = 700 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||2,80<br>5,00||µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 700 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||0,90<br>1,80||mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,35|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C|



## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|50|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|60|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|315<br>260|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|495<br>340|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 25 A|VF||1,05||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||2,00||mA|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,00|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op||||°C|



|preparedby:AS|dateofpublication:2013-10-03|
|---|---|
|approvedby:RS|revision:2.0|



2 

> IGBT-ModuleIGBT-modules FP25R12KT3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>FP25R12KT3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>15<br>25<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>30<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>105<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 15 A, VGE= 15 V<br>IC= 15 A, VGE= 15 V<br>VCE sat<br>1,70<br>1,90<br>2,15<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,50 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,15<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,10<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,04<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 75Ω<br>td on<br>0,09<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 75Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 75Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 75Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 75Ω<br>Eon<br>1,50<br>2,10<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 75Ω<br>Eoff<br>1,10<br>1,30<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>60<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,20<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C||



|preparedby:AS|dateofpublication:2013-10-03|
|---|---|
|approvedby:RS|revision:2.0|



3 

> IGBT-ModuleIGBT-modules FP25R12KT3 

## Technische�Information�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**Vorläufige�Daten Preliminary�Data** 

## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|10|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|20,0|||A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,80<br>1,85|2,25|V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||14,0<br>15,0||A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||1,00<br>1,80||µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||0,26<br>0,56||mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||2,30|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 

4 

IGBT-Module IGBT-modules 

## FP25R12KT3 

|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al203|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 225|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,02||K/W|
|Modulstreuinduktivität<br>Chip<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -<br>Module lead resistance, terminals - chip|TC<br>~~ee ~~<br>= 25°C, pro Schalter / per switch|LsCE<br>RCC'+EE'<br>RAA'+CC'<br> ~~ee ee~~|60<br>4,00<br>3,00<br>~~ee~~|||nH<br>mΩ|
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||180||g|



5 

IGBT-Module IGBT-modules 

## FP25R12KT3 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>50 a | 7 50 es | V } :<br>Tvj = 25°C VGE = 19V<br>45 FEJ Tvj = 125°C f | 45 | VVGEGE = 17V = 15V LeKAA TT<br>VGE = 13V<br>40 40 VGE = 11V<br>VGE =   9V<br>e e[__. ee a 2 /<br>35 35<br>po, /, : Yo<br>30 30<br>eee: Sane<br>25 25<br>J<br>/<br>20 20<br>15 /[‘ 15 i i]fi' /  7<br>ee<br>10 10<br>PT A<br>5 5<br>YEP Py) Lee<br>PLY<br>0 0<br>| | LA<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =36 Ω ,R Goff =36 Ω ,V CE =600V<br>50 11<br>Tvj = 25°C Eon, Tvj = 125°C<br>45 FeU Tvj = 125°C s 10 R Eoff, Tvj = 125°C T<br>40 ee 9 T e e pe ly<br>8<br>35<br>7<br>30 Pf pl de CECE<br>6<br>25 A eeeee<br>5<br>To pit tii tA TT<br>20 L<br>4<br>fe SERRE aes<br>15<br>PE<br>3<br>ee ey beg<br>10 ae aparamEveleanee<br>2<br>5 Per 1<br>0 0<br>| | | | | ) CUE FE EE<br>5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 35 40 45 50<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


6 

## IGBT-Module IGBT-modules 

## FP25R12KT3 

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Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =25A,V CE =600V<br>5,0 E LC] on, Tvj = 125°C 1 Pp| —L tii ZthJC : IGBT taeeeTTT TTT<br>4,5 T Eoff, Tvj = 125°C ]. | | jer | a i |<br>4,0<br>Pf | | UpZ| TTa aPLEA alTTI| | ||TH<br>3,5<br>ee I<br>3,0<br>ZO /<br>2,5 tft] tf 0,1 Ail<br>Pf ft 7pV Tet ea<br>2,0<br>Pf ff fff aT/T7 TUTTT| | ||<br>1,5<br>PA<br>1,0<br>i:    1    2    3    4<br>0,5 r τ ii[K/W]:   [s]:    0,09025   0,002345   0,3612   0,0282   0,2031   0,1128   0,1403   0,282<br>0,0 P| | ET 0,01 ooo<br>0 10 20 30 40 50 60 70 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =36 Ω ,T vj =125°C<br>55 50<br>IC, Modul Tvj = 25°C<br>50 MmPe]= I C L , Chip et| 45 SS Tvj = 125°C | yf[i|<br>45 | Td 40<br>40<br>35<br>35<br>30<br>30<br>25<br>25<br>20<br>fs<br>20<br>15<br>ee ee ee<br>15<br>a ee<br>10<br>10<br>5 5<br>+PPtft 7mM a<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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IGBT-Module IGBT-modules 

## FP25R12KT3 

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Erec =f (I F) Erec =f(R G)<br>RGon =36 Ω ,V CE =600V IF =25A,V CE =600V<br>3,0 3,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>2,5 2,5<br>2,0 2,0<br>a Te<br>1,5 1,5<br>1,0 1,0<br>0,5 0,5<br>0,0 0,0<br>0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, Gleichrichter (typisch)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJC =f (t) IF =f(V F)<br>10 et 50 —— |<br>ZthJC : Diode Tvj = 25°C<br>ooH— Fe e eee o 45 Fe Tvj = 150°C Jl fp<br>rT TT T T TT<br>40<br>S e Wf<br>35<br>1<br>eee ee oe oo !<br>EESPt et 30 Pf ft ff<br>a|2ee 25 Pf ft ff LAR<br>Pt Et<br>20<br>OT TTT Pf of ff FR Py<br>0,1<br>CAMttNT 15 a|<br>A '<br>PoPT TT TTTeeeTTT 10 Pf ff eR]L<br>i:    1    2    3    4<br>cc r τ ii[K/W]:   [s]:    0,1375   0,003333   0,888   0,03429    m 0,2558   0,1294   0,08101   0,7662    5<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC  [A]IF<br>Z<br>**----- End of picture text -----**<br>


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## IGBT-Module IGBT-modules Technische Information / FP25R12KT3 Technical Information 

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IC =f(V CE) IF =f(V F)<br>VGE =15V<br>30 30<br>Tvj = 25°C Tvj = 25°C<br>Tvj = 125°C Tvj = 125°C<br>25 25<br>:<br>/ a |<br>20 20<br>15 15<br>/ Zz<br>10 10<br>5 5<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>VCE  [V] VF [V]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R= f(T)<br>100000<br>| J Rtyp a—————————a<br>(Rar ce<br>a ee es es<br>ee ee<br>10000<br>NePNSS a<br>ER Ne ee<br>po NNT<br>pot NE<br>ERNE<br>1000<br>ee<br>a es<br>a a<br>po NN<br>aa<br>aa<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A]  [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules FP25R12KT3 

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## **Schaltplan�/�circuit_diagram_headline** 

## **Vorläufige�Daten Preliminary�Data** 

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## **Gehäuseabmessungen�/�package�outlines** 

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Infineon<br>**----- End of picture text -----**<br>


prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 

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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## FP25R12KT3 

## **Nutzungsbedingungen** 

## application. 

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## Links

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- [Supplier page](https://es.farnell.com/infineon/fp25r12kt3bpsa1/igbt-module-1-2kv-40a-155w-press/dp/3703597)
---

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