# IGBT Module, PIM Half Bridge Inverter, 15 A, 1.6 V, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3324626/)

**URL**: https://novapart.co/products/FP15R12W1T7B11BOMA1/igbt-module-pim-half-bridge-inverter-15-a-16-v-175
**SKU**: FP15R12W1T7B11BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €22.4600
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPIM |
| Igbt Technology | IGBT 7 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | - |
| Igbt Configuration | PIM Half Bridge Inverter |
| Transistor Mounting | Panel |
| Dc Collector Current | 15A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 15A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Saturation Voltage Vce(On) | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3324626/)

## FP15R12W1T7_B11 

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**----- Start of picture text -----**<br>
VCES = 1200V<br>IC nom = 15A / ICRM = 30A<br>**----- End of picture text -----**<br>


- Hilfsumrichter 

- Klimaanlagen 

- • Motorantriebe 

- CEsat 

- Trenchstop[TM] 

- 

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- Al2O3 Substrat mit kleinem thermischen Widerstand 

- 

- 

- 

- 

- 

- 

- CEsat 

- • Trenchstop[TM] 

- 

- 

- Al2O3 

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- 

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## **Digit** 

Datasheet www.infineon.com 

2019-09-19 

FP15R12W1T7_B11 

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## **Vorläufige�Daten Preliminary�Data** 

|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 110°C, Tvj max= 175°C|ICDC|15|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|30|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 15 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,60<br>1,74<br>1,82|t.b.d.|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,553 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,234||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||2,82||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,0099||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||0,003|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 15 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,023<br>0,025<br>0,026||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 15 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,012<br>0,015<br>0,016||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 15 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,18<br>0,275<br>0,31||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 15 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,23<br>0,36<br>0,42||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 15 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 750 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||0,87<br>1,21<br>1,45||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 15 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 2400 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||1,24<br>1,90<br>2,25||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤7 µs,|ISC||48<br>45||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||1,80||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



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## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|10|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|27,5<br>24,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,72<br>1,59<br>1,52|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 700 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||15,5<br>19,2<br>22,5||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 10 A, - diF/dt = 700 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||0,82<br>1,46<br>2,05||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 700 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||0,31<br>0,57<br>0,82||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||2,51||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
|**Diode,Gleichrichter/Diode,Rectifier**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||||
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|||V|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TH= 100°C|IFRMSM|<br>25|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TH= 100°C|IRMSM|25|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|300<br>245|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|450<br>300|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 10 A|VF||0,80||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||1,57||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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## **Vorläufige�Daten Preliminary�Data** 

|**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 110°C, Tvj max= 175°C|ICDC|15|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|30|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 15 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,60<br>1,74<br>1,82|t.b.d.|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,553 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,234||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||2,82||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,0099||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||0,003|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 15 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,023<br>0,025<br>0,026||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 15 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,012<br>0,015<br>0,026||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 15 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,18<br>0,275<br>0,31||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 15 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,23<br>0,36<br>0,42||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 15 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 750 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||0,87<br>1,21<br>1,45||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 15 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 2400 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 7,5Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||1,24<br>1,90<br>2,25||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤7 µs,|ISC||48<br>45||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||1,80||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



V�2.0 2019-09-19 

Datasheet 

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FP15R12W1T7_B11 

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## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|10|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|27,5<br>24,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,72<br>1,59<br>1,52|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 700 A/µs (Tvj=175°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||15,5<br>19,2<br>22,5||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 10 A, - diF/dt = 700 A/µs (Tvj=175°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||0,82<br>1,46<br>2,05||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 700 A/µs (Tvj=175°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||0,31<br>0,57<br>0,82||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||2,51||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

V�2.0 2019-09-19 

Datasheet 

5 

FP15R12W1T7_B11 

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## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|2,5<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||8,00<br>6,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|Gewicht<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. 

The current under continuous operation is limited to 25A rms per connector pin. Tvj op > 150°C ist im Überlastbetrieb zulässig. Detaillierte Angaben sind AN 2018-14 zu entnehmen. 

Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. 

6 

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FP15R12W1T7_B11 

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## **Vorläufige�Daten Preliminary�Data** 

**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C 

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**----- Start of picture text -----**<br>
30 30<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 175°C VGE = 15V<br>VGE = 13V<br>25 25 VGE = 11V<br>VGE = 9V<br>20 20<br>15 15<br>10 10<br>5 5<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

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**----- Start of picture text -----**<br>
30<br>Tvj = 25°C<br>Tvj = 125°C<br>27 T vj  = 175°C<br>24<br>21<br>18<br>15<br>12<br>9<br>6<br>3<br>0<br>5 6 7 8 9 10 11 12 13 14<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>


## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�7.5� Ω ,�RGoff�=�7.5� Ω ,�VCE�=�600�V 

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**----- Start of picture text -----**<br>
5,0<br>Eon, Tvj = 125°C<br>Eon, Tvj = 175°C<br>4,5 E off , T vj  = 125°C<br>Eoff, Tvj = 175°C<br>4,0<br>3,5<br>3,0<br>2,5<br>2,0<br>1,5<br>1,0<br>0,5<br>0,0<br>0 5 10 15 20 25 30<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>


V�2.0 2019-09-19 

Datasheet 

7 

FP15R12W1T7_B11 

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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =15A,V CE =600V VGE =415V,R Gon =75 Ω ,R Goff =7.5 Ω ,V CE =600V,T vj =175°C<br>5,0 ee 10 ee<br>Eon, Tvj = 125°C a 1|| t don eea<br>Eon, Tvj = 175°C 7 tr<br>4,5 E off , T vj  = 125°C 4 t doff<br>Eoff, Tvj = 175°C 7 tf<br>7<br>4,0 1<br>My 7 aa<br>3,5<br>3,0 0,1<br>2,5<br>2,0 0,01<br>Zz<br>ge |}<br>a ee ee<br>1,5 /<br>5 / eo<br>/<br>1,0 0,001<br>0,5<br>0,0 0,0001<br>0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>


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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) dv/dt= f(R G)<br>VGE =415V,1 C =15A,V CE =600V,T vj =175°C VGE =+15V,V CE =600V,T vj =25°C<br>10 a a a a a 10<br>| ttdon r a dv/dt-on at 1/10 Idv/dt-off at Inom nom<br>| a<br>t doff 9<br>t f<br>8<br>7<br>1<br>6<br>5<br>4<br>0,1<br>3<br>2<br>7<br>a 1<br>0,01 0<br>0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80<br>RG [ Ω ] RG [Ohm]<br>t [µs]<br>dv/dt [V/ns]<br>**----- End of picture text -----**<br>


8 

Datasheet 

2019-09-19 

FP15R12W1T7_B11 

## **(RBSOA)** 

## ZthJH 

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**----- Start of picture text -----**<br>
IC =f(V CE)<br>VGE =415V,R Goff =7.5 Ω ,T vj =175°C<br>10 35<br>ZthJH : IGBT IC, Modul<br>IC, Chip<br>30<br>25<br>20<br>1<br>15<br>10<br>i: 1 2 3 4 5<br>ri[K/W]: 0,151 0,375 1,051 0,223<br>τ i[s]: 0,000792 0,0108 0,096 0,452<br>0,1 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400<br>t [s] VCE  [V]<br>Kapazitats Charakteristik IGBT,Wechselrichter (typisch) Gateladungs Charakteristik IGBT,Wechselrichter (typisch)<br>capacity characteristic IGBT,Inverter (typical) gate charge characteristic IGBT,Inverter (typical)<br>C=f(V CE) VGE =f(Q G)<br>VGE =0OV,T vj = 25°C,f = 100kHz IC =15A,T vj =25°C<br>10 15<br>Cies VCE = 600 V<br>C oes<br>C res<br>=<<br>a __/<br>10<br>1<br>ee 5 /<br>0,1 0<br>me<br>Se<br>a a<br>ee eee<br>\ _—— — -5<br>ROE [Pssst]<br>0,01<br>po<br>(ai -10<br>0,001 -15<br>0 10 20 30 40 50 60 70 80 90 100 0,00 0,05 0,10 0,15 0,20 0,25<br>VCE [V] QG [µC]<br> [K/W]thJH  [A]IC<br>Z<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>


9 

Datasheet 

2019-09-19 

FP15R12W1T7_B11 

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IF =f(V F) Erec =fil F)<br>RGon =7.5 Ω ,V CE =600V<br>20 1,2<br>18 TT T vjvjvj = 25°C = 125°C  = 175°C ! / 1,1 E E rec rec , T , T vj vj  = 125°C  = 175 ° C<br>/ - [a]<br>/ 1,0<br>16 i/ / / a“-<br>0,9<br>// a<br>14 / 77<br>/ 0,8 a<br>/<br>12 aa<br>0,7<br>10 0,6 Z<br>/<br>/<br>8 0,5 7<br>/<br>0,4 VA<br>6 /<br>/<br>0,3<br>/<br>4<br>0,2<br>2 Of<br>0,1<br>0 0,0<br>ae ee eee<br>0,0 0,5 1,0 1,5 2,0 2,5 0 2 4 6 8 10 12 14 16 18 20<br>VF [V] IF [A]<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>


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Erec =f(R G) ZthJH<br>IF =10A,V CE =600V<br>**----- End of picture text -----**<br>


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1,0 10<br>Erec, Tvj = 125°C ZthJH : Diode<br>Erec, Tvj = 175°C<br>0,9<br>0,8<br>0,7<br>0,6 ~N<br>“NX<br> J<br>0,5 1<br>0,4<br>0,3<br>0,2<br>i: 1 2 3 4<br>0,1 ri[K/W]: 0,228 0,562 1,124 0,596<br>τ i[s]: 0,0006 0,0074 0,0555 0,255<br>0,0 0,1<br>0 10 20 30 40 50 60 70 80 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


10 

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FP15R12W1T7_B11 

> IF =f(V F) 

ZthJH 

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20 10<br>Tvj = 25°C ZthJH: Diode<br>18 = Tvj = 150°C | e reestieenmsete<br>ft eeetectil eee<br>| noo<br>16<br>a ee|<br>14<br>1<br>| | ee triamani<br>12 j | | eYteT e LTT AA cTAA<br>10 |<br>|<br>8 | lfi<br>| 0,1 J<br>6<br>amet emetic<br>4<br>———<br>i: 1 2 3 4<br>2 po PCCe ri[K/W]: 0,121 c 0,493 0,87 0,086<br>τ i[s]: 0,003 0,0425 0,19 1,932<br>0 0,01<br>0,0 Bae 0,2 0,4  ean 0,6 | 0,8 1,0 1,2 1,4 0,001 0,01 peHH 0,1 1 10<br>VF [V] t [s]<br> [A]IF  [K/W]thJH<br>Z<br>**----- End of picture text -----**<br>


> IC =f(V CE) 

> VGE =15V 

> IF =f(V F) 

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**----- Start of picture text -----**<br>
30 20<br>Tvj = 25°C Tvj = 25°C<br>Tvj = 125°C Tvj = 125°C<br>Tvj = 175°C 18 T vj  = 175°C<br>25<br>: 16 a<br>//<br>//<br>14<br>20<br>i/<br>// 12<br>li;<br>/i<br>15 7 10<br>8<br>10 i jJ/<br>f 6 ‘7-//<br>//<br>//<br>4<br>5<br>2<br>ff<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE  [V] VF [V]<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


11 

Datasheet 

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FP15R12W1T7_B11 

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## **Vorläufige�Daten Preliminary�Data** 

**NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(TNTC) 

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**----- Start of picture text -----**<br>
100000<br>Rtyp<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


12 

V�2.0 2019-09-19 

Datasheet 

FP15R12W1T7_B11 

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## **Schaltplan�/�Circuit�diagram** 

## **Vorläufige�Daten Preliminary�Data** 

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**----- Start of picture text -----**<br>
J<br>**----- End of picture text -----**<br>


## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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13 

V�2.0 2019-09-19 

Datasheet 

## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/FP15R12W1T7B11BOMA1/igbt-module-pim-half-bridge-inverter-15-a-16-v-175)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fp15r12w1t7b11boma1/igbt-module-six-n-ch-1-2kv-15a/dp/3324626)
---

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