# IGBT Module, PIM Three Phase Input Rectifier, 10 A, 1.85 V, 105 W, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3227671/)

**URL**: https://novapart.co/products/FP10R12W1T4B11BOMA1/igbt-module-pim-three-phase-input-rectifier-10-a
**SKU**: FP10R12W1T4B11BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €21.3800
**Stock**: 50+
**Lead Time**: 190 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | - |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 105W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Dc Collector Current | 10A |
| Power Dissipation Pd | 105W |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 10A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Saturation Voltage Vce(On) | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3227671/)

IGBT-模块 IGBT-modules FP10R12W1T4_B11 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

## **初步数据 Preliminary�Data** 

|技术信息/TechnicalInformation<br>FP10R12W1T4_B11<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-05<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>10<br>20<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>20<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>105<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 10 A, VGE= 15 V<br>IC= 10 A, VGE= 15 V<br>IC= 10 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,09<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>0,60<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,024<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 47Ω<br>td on<br>0,045<br>0,045<br>0,045<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 47Ω<br>tr<br>0,044<br>0,061<br>0,063<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 47Ω<br>td off<br>0,18<br>0,245<br>0,275<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 47Ω<br>tf<br>0,165<br>0,215<br>0,225<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 10 A, VCE= 600 V, LS= 50 nH<br>VGE= ±15 V, di/dt = 500 A/µs (Tvj= 150°C)<br>RGon= 47Ω<br>Eon<br>0,90<br>1,35<br>1,55<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 10 A, VCE= 600 V, LS= 50 nH<br>VGE= ±15 V, du/dt = 3500 V/µs (Tvj= 150°C)<br>RGoff= 47Ω<br>Eoff<br>0,55<br>0,80<br>0,87<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>35<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>1,25<br>1,40<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>1,15<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



1 

IGBT-模块 IGBT-modules FP10R12W1T4_B11 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|10|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|16,0<br>14,0|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||12,0<br>10,0<br>8,00||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,90<br>1,70<br>1,90||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,24<br>0,52<br>0,59||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||1,75|1,90|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,30||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **二极管,整流器�/�Diode,�Rectifier 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|30|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|30|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|300<br>245|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|450<br>300|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 10 A|VF||0,80||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||1,20|1,35|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,15||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



|preparedby:DK|dateofpublication:2013-11-05|
|---|---|
|approvedby:MB|revision:2.0|



2 

技术信息�/�Technical�Information IGBT-模块 IGBT-modules FP10R12W1T4_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�制动-斩波器�/�IGBT,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP10R12W1T4_B11<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-05<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,制动-斩波器/IGBT,Brake-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>10<br>20<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>20<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>105<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 10 A, VGE= 15 V<br>IC= 10 A, VGE= 15 V<br>IC= 10 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,09<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>0,60<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,024<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 47Ω<br>td on<br>0,045<br>0,045<br>0,045<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 47Ω<br>tr<br>0,044<br>0,061<br>0,063<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 47Ω<br>td off<br>0,18<br>0,245<br>0,275<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 47Ω<br>tf<br>0,165<br>0,215<br>0,225<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 10 A, VCE= 600 V, LS= 50 nH<br>VGE= ±15 V<br>RGon= 47Ω<br>Eon<br>0,90<br>1,35<br>1,55<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 10 A, VCE= 600 V, LS= 50 nH<br>VGE= ±15 V<br>RGoff= 47Ω<br>Eoff<br>0,55<br>0,80<br>0,87<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>35<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>1,25<br>1,40<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>1,15<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



3 

IGBT-模块 IGBT-modules FP10R12W1T4_B11 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管，制动-斩波器�/�Diode,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|10|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|16,0<br>14,0|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||12,0<br>10,0<br>8,00||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,90<br>1,70<br>1,90||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 500 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,24<br>0,52<br>0,59||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||1,75|1,90|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,30||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�DK date�of�publication:�2013-11-05 approved�by:�MB revision:�2.0 

4 

IGBT-模块 IGBT-modules FP10R12W1T4_B11 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **模块�/�Module** 

|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|2,5|||kV|
|内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|爬电距离<br>Creepagedistance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||11,5<br>6,3|||mm|
|电气间隙<br>Clearance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||10,0<br>5,0|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|杂散电感,模块<br>Strayinductancemodule||LsCE||30||nH|
|模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'<br>RAA'+CC'||8,00<br>6,00||mΩ|
|最大结温<br>Maximumjunctiontemperature|逆变器,制动-斩波器/inverter,brake-chopper<br>整流器/rectifier|Tvj max|||175<br>150|°C<br>°C|
|在开关状态下温度<br>Temperatureunderswitchingconditions|逆变器,制动-斩波器/inverter,brake-chopper<br>整流器/rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|储存温度<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|重量<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. 

date�of�publication:�2013-11-05 revision:�2.0 

prepared�by:�DK approved�by:�MB 

5 

## IGBT-模块 IGBT-modules 

## FP10R12W1T4_B11 

## **初步数据** 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>20 a | ¢ 20 es | fos<br>Tvj = 25°C VGE = 19V<br>18 Tvj = 125°C / 18 VGE = 17V<br>F Tvj = 150°C s VGE = 15V Lee Le<br>VGE = 13V<br>16 ee ‘ 3 16 VGE = 11V ‘ : Zz<br>eo | VGE = 9V A<br>14 PP 14 A |<br>| Ae F d<br>12 en ea 12 e vee<br>ee 2<br>10 10<br>Ae if / L<br>8 | 8<br>6 ee 6 7<br>ee<br>ee<br>4 4<br>ee<br>A ge<br>2 2<br>ee ee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feSH1S1E IGBT, PaEES (SR) FFGARE IGBT, AEEE ( HUB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =47 Ω ,R Goff =47 Ω ,V CE =600V<br>20 5,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>18 Tvj = 125°C 4,5 [F] Eon, Tvj = 150°C [O]<br>E T [L] vj = 150°C [O] Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>16 4,0<br>oe ea Ee t ooo<br>14 3,5 [E] [E]<br>pi | tT [ee]<br>ee) e e<br>12 3,0<br>Ree Ane eee<br>10 2,5<br>SRR? 2a eeeva ee<br>8 2,0<br>6 pi}| 1,5 Z|<br>| AP} EE dee<br>4 ee ee 1,0 ec<br>2 0,5<br>i Ae ee oeee<br>ee} GREE<br>0 0,0<br>5 6 7 8 9 10 11 12 13 0 2 4 6 8 10 12 14 16 18 20<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules 

## FP10R12W1T4_B11 

## **初步数据** 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =10A,V CE =600V<br>6,0 10<br>i HEHE<br>i Eon, Tvj = 125°C 1 ] | tt i H— ZthJH : IGBT Soo EEE EA<br>5,5 Eon, Tvj = 150°C 7 Titi TT<br>Eoff, Tvj = 125°C<br>5,0 e Eoff, Tvj = 150°C e em<br>— T T Ty a ee |<br>4,5 Pt| | ft | a, a |<br>4,0 Ee PTY TH PTA CP<br>Pt KA Lo h<br>3,5 eer He<br>3,02,5 P|fanveaneeeeeeereeercrees)Lear7 | 4| | ddd 1 PCCeteaeLMIaa et Ul<br>2,0 Vann i | |<br>1,5 oL IETIE TT |<br>1,0<br>i:    1    2    3    4<br>ri[K/W]:   0,209    0,443   0,982   0,766<br>0,5 τ i[s]:    0,0005   0,005   0,05    0,2<br>Pt EE ALN | coocll l<br>0,0 0,1<br>0 50 100 150 200 250 300 350 400 450 500 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RieZS LEK IGBT, ees ( RBSOA) Fa mESst REGS ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE “i sV.R Goff =47 Ω ,T vj =150°C a<br>22 20<br>IC, Modul Tvj = 25°C<br>20 —L I C , Chip _Ltt 18 Tvj = 125°C<br>Tvj = 150°C<br>18<br>tye} ty | 16 | Eb<br>Fe<br>16<br>14<br>14<br>ee 12 ee<br>12<br>10<br>10<br>8<br>8<br>6<br>6<br>4<br>4<br>2 2<br>SEE 7a<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


7 

IGBT-模块 IGBT-modules 

## FP10R12W1T4_B11 

## **初步数据** 

**==> picture [487 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon av Ω »,V CE =600V IF jon CE = 600 V<br>1,0 0,8<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>0,7<br>EJ a<br>0,8<br>0,6<br>0,5<br>0,6<br>0,4<br>| pe oaene ACNE EEE<br>0,4 eT Nene<br>0,3<br>yo et) PONSERET TT<br>0,2<br>ic PeSEEE<br>0,2<br>EEE<br>0,1<br>0,0 0,0<br>0 2 4 6 8 10 12 14 16 18 20 0 40 80 120 160 200 240 280 320 360 400 440 480<br>IF [A] RG [ Ω ]<br>PAM RS EES Fame —RE Sms ( BB)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJH =f (t) IF =f(V F)<br>10 20<br>ZthJH : Diode Tvj = 25°C<br>(ttt HSpeI TT eo 18 mM| Tvj = 150°C 1 . fi lh fy.<br>CeTTI CATTT 16 fn ee eee<br>+} 14 Pf ff<br>TEe I CATT UHM<br>12<br>CEI, (EEF<br>1 10<br>YATAYATAT [Tt] TTTETTTTLAM TTT 8 a<br>TMYC Cr i eee<br>6<br>a TT TT<br>a a | 4 Pf PL<br>i:    1    2    3    4<br>H r τ ii[K/W]:   [s]:    E 0,404   0,0005   0,664   0,005   1,174   0,05    0,808   0,2    2 EE<br>0,1 OE oo l 0 P| fer VY |<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJH  [A]IF<br>Z<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FP10R12W1T4_B11 

## **初步数据** 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IF =f(V F)<br>VGE =15V<br>20 20<br>Tvj = 25°C Tvj = 25°C<br>18 Tvj = 125°C 18 Tvj = 125°C<br>Tvj = 150°C Tvj = 150°C<br>fF fe a<br>16 or e e/a 16 ee<br>14 Fo [ee] / A 14 i<br>12 12<br>10 10<br>8 8<br>6 feeeee 6<br>4 4<br>2 2<br>a<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE  [V] VF [V]<br>EEACe CAe tc acd<br>NTC-Thermistor-temperature characteristic (typical)<br>R=f(T)<br>100000<br>}—f Rtyp e<br>Res r e<br>P TC<br>ee ee ee<br>10000<br>KE ee<br>a Et |<br>ER Ns es es rs<br>a Ne ee ee es ee<br>PN<br>pp Nf<br>1000 ——NNa a a<br>Po NN<br>esee es<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A]  [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


9 

## 技术信息�/�Technical�Information 

IGBT-模块 IGBT-modules FP10R12W1T4_B11 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

**==> picture [402 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
接线图�/�circuit_diagram_headline<br>J<br>封装尺寸�/�package�outlines<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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prepared�by:�DK date�of�publication:�2013-11-05 approved�by:�MB revision:�2.0 

10 

IGBT-模块 IGBT-modules 

## FP10R12W1T4_B11 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 

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11 



## Links

- [View this product on Novapart](https://novapart.co/products/FP10R12W1T4B11BOMA1/igbt-module-pim-three-phase-input-rectifier-10-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fp10r12w1t4b11boma1/igbt-mod-six-n-ch-1-2kv-10a-105w/dp/3227671)
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