# IGBT Module, PIM Three Phase Input Rectifier, 10 A, 1.55 V, 68 W, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3227670/)

**URL**: https://novapart.co/products/FP10R06W1E3BOMA1/igbt-module-pim-three-phase-input-rectifier-10-a
**SKU**: FP10R06W1E3BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €18.8000
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EasyPIM |
| Igbt Technology | IGBT 3 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | 68W |
| Igbt Configuration | PIM Three Phase Input Rectifier |
| Transistor Mounting | Panel |
| Dc Collector Current | 10A |
| Power Dissipation Pd | 68W |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 10A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Saturation Voltage Vce(On) | 1.55V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3227670/)

IGBT-模块 IGBT-modules 

## FP10R06W1E3 

VCES = 600V IC nom = 10A / ICRM = 20A 

## **典型应用** 

- 辅助逆变器 

- • 空调 

- 电机传动 

- 

- 

- 

## **电气特性** 

- 低开关损耗 

- • 沟槽栅IGBT3 

- VCEsat 

- CEsat 

- 

- 

- VCEsat 

- CEsat 

## **机械特性** 

- 2O3 

- 紧凑型设计 

- • 焊接技术 

- 集成的安装夹使安装坚固 

- Al2O3 

- 

- 

• Rugged mounting due to integrated mounting clamps 

1 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP10R06W1E3 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP10R06W1E3<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>10<br>16<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>20<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>68,0<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 10 A, VGE= 15 V<br>IC= 10 A, VGE= 15 V<br>IC= 10 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,10<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>0,55<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,017<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 10 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 27Ω<br>td on<br>0,012<br>0,012<br>0,012<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 10 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 27Ω<br>tr<br>0,009<br>0,013<br>0,014<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 10 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 27Ω<br>td off<br>0,10<br>0,12<br>0,125<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 10 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 27Ω<br>tf<br>0,085<br>0,13<br>0,135<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 10 A, VCE= 300 V, LS= 60 nH<br>VGE= ±15 V, di/dt = 1500 A/µs (Tvj= 150°C)<br>RGon= 27Ω<br>Eon<br>0,14<br>0,20<br>0,22<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 10 A, VCE= 300 V, LS= 60 nH<br>VGE= ±15 V, du/dt = 4100 V/µs (Tvj= 150°C)<br>RGoff= 27Ω<br>Eoff<br>0,24<br>0,30<br>0,32<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>70<br>50<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>2,00<br>2,20<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>1,35<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



2 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP10R06W1E3 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|600||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|10|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|12,5<br>9,50|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||18,0<br>19,0<br>21,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,50<br>0,85<br>1,10||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,11<br>0,20<br>0,26||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||2,90|3,20|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,40||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **二极管,整流器�/�Diode,�Rectifier 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|30|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|30|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|300<br>245|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|450<br>300|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 10 A|VF||0,80||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||2,00||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||1,20|1,35|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,15||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op||||°C|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:2.1|||||||
|preparedby:DK|dateofpublication:2013-10-03||||||
|approvedby:MB|revision:2.1||||||



3 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP10R06W1E3 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�制动-斩波器�/�IGBT,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>FP10R06W1E3<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,制动-斩波器/IGBT,Brake-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>10<br>16<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>20<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>68,0<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 10 A, VGE= 15 V<br>IC= 10 A, VGE= 15 V<br>IC= 10 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,10<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>0,55<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,017<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 10 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 27Ω<br>td on<br>0,012<br>0,012<br>0,012<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 10 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 27Ω<br>tr<br>0,009<br>0,013<br>0,014<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 10 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 27Ω<br>td off<br>0,10<br>0,12<br>0,125<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 10 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 27Ω<br>tf<br>0,085<br>0,13<br>0,135<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 10 A, VCE= 300 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 27Ω<br>Eon<br>0,14<br>0,20<br>0,22<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 10 A, VCE= 300 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 27Ω<br>Eoff<br>0,24<br>0,30<br>0,32<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>70<br>50<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>2,00<br>2,20<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>1,35<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



4 

技术信息�/�Technical�Information IGBT-模块IGBT-modules FP10R06W1E3 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **二极管，制动-斩波器�/�Diode,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|600||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|10|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|12,5<br>9,50|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||18,0<br>19,0<br>21,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,50<br>0,85<br>1,10||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,11<br>0,20<br>0,26||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||2,90|3,20|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,40||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.1 

5 

> IGBT-模块IGBT-modules FP10R06W1E3 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **模块�/�Module** 

|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|爬电距离<br>Creepagedistance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||11,5<br>6,3|||mm|
|电气间隙<br>Clearance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||10,0<br>5,0|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|杂散电感,模块<br>Strayinductancemodule||LsCE||30||nH|
|模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'<br>RAA'+CC'||8,00<br>6,00||mΩ|
|储存温度<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|重量<br>Weight||G||24||g|



Der Strom im Dauerbetrieb ist auf 30 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 30 A rms per connector pin. 

prepared�by:�DK approved�by:�MB 

date�of�publication:�2013-10-03 revision:�2.1 

6 

IGBT-模块 IGBT-modules 

## FP10R06W1E3 

## **初步数据** 

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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>20 20<br>Tvj = 25°C VGE = 19 V<br>18 Tvj = 125°C 18 VGE = 17 V<br>i Tvj = 150°C 7 VGE = 15 V Lue<br>VGE = 13 V<br>16 eee 16 VGE = 11 V |<br>T_T e e | act tL<br>VGE = 9 V<br>PP [Le [iy _<br>14 14<br>12 PP Aaee 12 FE iee<br>‘ /<br>10 10<br>PP yee ee<br>8 SRR Ae eee 8 eee<br>‘<br>6 6 —<br>eee) eee eee A e<br>[i<br>4 4<br>SREP see eee) [a] [e]<br>2 2<br>BREE eee Ae<br>0 0<br>CE E-CCCEr} §= Gee<br>0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (BB) FFHIRE IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =27 Ω ,R Goff =27 Ω ,V CE =300V<br>20 0,8<br>Tvj = 25°C Eon, Tvj = 125°C<br>18 Tvj = 125°C Eoff, Tvj = 125°C<br>F Tvj = 150°C E | L te Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>16<br>0,6<br>14<br>12 eeaa /& : LOOaaAao<br>10 0,4 |<br>ae wed<br>8<br>6<br>0,2<br>4 a Fu, eee AS“Ze<br>a “ae An 4oe—-“Y<br>2 pe TL<br>0 0,0<br>5 6 7 8 9 10 11 12 0 5 10 15 20<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


7 

IGBT-模块 IGBT-modules 

## FP10R06W1E3 

## **初步数据** 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =10A,V CE =300V<br>1,0 10<br>a ET<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eoff, Tvj = 125°C H—a S O E eeoe th<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>0,8 FES o fo YY“ a aPL a aTT ee || |||<br>e r<br>alll<br>ZiA a TUT UT<br>0,6<br>1<br>Ty oaVaoF Oa)adAZale<br>0,4<br>t+ a |<br>LS YETTET<br>2 aan aee<br>PL EEE PEI ETT<br>J ||<br>0,2<br>PPT EOICir<br>i:    1    2    3    4<br>ri[K/W]:   0,2865   0,7818   1,2381   1,0436<br>τ i[s]:    0,0005   0,005    0,05    0,2<br>0,0 0,1<br>0 30 60 90 120 150 180 210 240 270 300 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RiwZSLiF K IGBT, aes ( RBSOA ) LEG mE RS ewe ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE SVR Goff =27 Ω ,T vj =150°C a<br>22 20<br>IC, Modul Tvj = 25°C<br>20 a I C , Chip 18 Tvj = 125°C<br>Tvj = 150°C<br>poo<br>18<br>ee 16<br>16<br>14<br>p stee e e nsae<br>14<br>12<br>12<br>10<br>10<br>8<br>8<br>6<br>6<br>4<br>4<br>2 2<br>ee ee ee LZ<br>a<br>0 0<br>0 200 400 600 800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


8 

IGBT-模块 IGBT-modules 

## FP10R06W1E3 

## **初步数据** 

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**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon 1S Ω ,V CE =300V IF -t0KV CE = 300 V<br>0,5 0,5<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>0,4 0,4<br>0,3 0,3<br>0,2 0,2<br>0,1 Z ‘ ea 0,1 SLE |<br>0,0 0,0<br>0 2 4 6 8 10 12 14 16 18 20 0 30 60 90 120 150 180 210 240 270 300<br>IF [A] RG [ Ω ]<br>RA MS eee EAE —RS, STs ( BZ)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJH =f (t) IF =f(V F)<br>10 20<br>PE —<br>ZthJH : Diode Tvj = 25°C<br>a H—|Foo nn Tvj = 150°C<br>PTCerTT E T TT<br>a FE E 15<br>UIE eM aeEEE TTTI<br>Pe<br>1 10<br>St ee ey |<br>| 7L TT Tt [TT]<br>7 | TT<br>ee el<br>| |<br>5<br>PL I TET ETI ET 1<br>i:    1    2    3    4<br>ri[K/W]:   0,3672   1,1544   1,8358   0,9426<br>τ i[s]:    0,0005   0,005    0,05    0,2<br>LLag | eA boo l | EYa  7<br>0,1 0<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJH  [A]IF<br>Z<br>**----- End of picture text -----**<br>


9 

IGBT-模块 IGBT-modules 

## FP10R06W1E3 

## **初步数据** 

**==> picture [486 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC =f(V CE) IF =f(V F)<br>VGE =15V<br>20 20<br>Tvj = 25°C Tvj = 25°C<br>18 Tvj = 125°C 18 Tvj = 125°C<br>E Tvj = 150°C I] F Tvj = 150°C oo<br>16 16<br>re s Po o<br>e e e e<br>14 14<br>12 12<br>10 10<br>8 8<br>6 6<br>4 ieeeJ 4 eee iAeee<br>2 2<br>p oe nae<br>0 0<br>-_ || Lee<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE  [V] VF [V]<br>REBARBB BEBE<br>NTC-Thermistor-temperature characteristic (typical)<br>R= f(T)<br>100000<br>_—— Rtyp f[<br>(Rar ce<br>a<br>a a<br>10000 ERE<br>—<br>ER Ne ee<br>a Ne ee ee<br>pot NE<br>pp Nf<br>1000 Sea a<br>po NN<br>(a<br>aa<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A]  [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


10 

## 技术信息�/�Technical�Information 

> IGBT-模块IGBT-modules FP10R06W1E3 

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初步数据<br>Preliminary�Data<br>**----- End of picture text -----**<br>


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prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.1 

11 

IGBT-模块 IGBT-modules 

## FP10R06W1E3 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 

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12 



## Links

- [View this product on Novapart](https://novapart.co/products/FP10R06W1E3BOMA1/igbt-module-pim-three-phase-input-rectifier-10-a)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/fp10r06w1e3boma1/igbt-mod-six-n-ch-600v-10a-68w/dp/3227670)
---

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